Secondary ion mass spectrometry

01/01/1998

Secondary ion mass spectrometry

The shrinking of the lateral dimensions of semiconductor devices to =0.25 ?m is accompanied by an even greater reduction of the junction depth, to <100 nm. The energy of the SIMS 4500`s analyzing beam is low enough for ultrashallow-junction depth profiling. Depth capabilities include fast profiling of conventional dopant profiles, as well as profiling of small test structures. Atomika Instruments GmbH, Munich, Germany; ph 49/89/315-89141, fax 49/89/315-5921, e-mail [email protected].