WN film for DRAM capacitors

02/01/1999

WN film for DRAM capacitors

Tungsten nitride (WN), when used as an electrode material, results in 10 times lower leakage for Ta2O5 capacitors than other electrode materials such as TiN. This new CVD technique deposits WN that uniformly coats the intricate structures which are present in modern DRAM capacitors, controlling particles and repeatability to the current tight production requirements. The film is available on the production-proven LYNX2 single-wafer cluster tool, a multiple-film system with up to four-module capability. Genus Inc., Sunnyvale, CA; ph 408/747-7120, fax 408/747-7199, www.genus.com.