Japan

02/01/1999

Japan

Toshiba Corp. and Fujitsu Ltd. will begin development work for 0.13-?m, 1-Gbit DRAM technologies, including capacitor insulators, under a 30 billion yen ($253 million) joint project. The agreement calls for the completion of 1-Gbit DRAM prototypes by March 2002. About 100 researchers will work out of Toshiba`s Advanced Microelectronics Center in Yokohama.

A new semiconductor equipment venture between Mitsubishi Corp. and Kokusai Electric has been established to produce ashing systems. The start-up, according to the Nihon Keizai Shimbun, is taking over the operation from Mitsu-bishi`s MC Electronics Co.; Mitsubishi will contribute 66% of the initial 300 million yen capital. Current estimates call for the new business to hit 2 billion yen in sales by January 2000, and 3.5 billion yen in sales three years later.