I300I makes 0.12-um lines with 248-nm exposure
01/01/1999
I300I makes 0.12-?m lines with 248-nm exposure
In cooperation with several equipment suppliers, lithography engineers at SEMATECH`s International 300-mm Initiative - I300I - have achieved 0.12-?m lines and 0.24-?m spaces on both aluminum and bare silicon (see figure and table). At I300I, the combined efforts of the process support and metrology center (PSMC) lithography team and the pattern technology group completed this work. The significance of this milestone is that it is "next-node" lithography done with existing generation 248-nm wavelength lithography on 300-mm wafers. Dan Enloe, an Intel assignee and I300I director of pattern technology, says, "This is a significant accomplishment and an indicator that equipment suppliers should not let up on 300-mm development work."
This lithography milestone was accomplished using the Canon FPA-3000EX3L 300-mm DUV stepper; Intel and I300I accepted this system after a successful performance test in which it exposed more than 1500, 300-mm wafers. (The same model system is installed at Japan`s Selete.)
At I300I, the stepper is integrated with a TEL track system. I300I also used an Eaton Fusion model PS3 DUV-resist stabilization system in the process route. The process used 6030 ? of TOK 009 resist, single exposure, and I300I`s standard line-and-space phase shift reticle.
Enloe admits, "This is not yet a qualified process because we are working on reducing the resist viscosity for a thinner 5000-? resist film. We also need to program our Hitachi CD SEM for automatic operation on these structures. However, it is very significant that the etch supplier we are working with has successfully etched these patterns on metal test wafers producing metal lines at a high aspect ratio with 0.12-?m lines and 0.24-?m spaces."
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CD SEM image from 13001showing 0.12-?m lines.
According to Derek Youngson, operations manager of I300I, the achievement is solid evidence that the I300I program has a role not only in the transition to 300-mm wafers, but also in extending process development to 0.15 and even 0.13 ?m. "Our member companies want the equipment community to keep their momentum in 300-mm technology development," Youngson said.
Enloe and John Peterson of the lithography group at International SEMATECH believe that continued research into optical extensions and advanced resists can push the window that they have demonstrated even further. "We see this 300-mm capability possibly going into the 0.10-?m node, on nearly an equal pace with what can be achieved with 200-mm tools." Last April, SEMATECH achieved 0.10-?m geometry with 248-nm lithography on 200-mm wafers ("`Manufacturable` 100-nm features from 248-nm lithography," SSTJuly, p. 54). - P.B.