Annealing system

11/01/1997

Annealing system

This batch processing, production annealing system is designed for slip-free activation of ion implanted gallium arsenide and for repair of ion implanted lattice damage on silicon wafers. In applications where decomposition of the wafer material during annealing is of concern, the system is provided with an over-pressure of the volatile component. Annealing atmospheres of arsine, hydrogen, forming gas, ammonia, argon, and others are available. In gallium arsenide, the arsenic overpressure is used to allow for capless annealing, yielding sheet resistance uniformities of <2% across the wafer. Annealing is also used for metallization anneals and to reduce polysilicon interconnect resistance. System features include: a cantilevered, automatic loading system; 200-mm wafer size; operation up to 1000?C; automatic system operation and data logging of process data; and a built-in toxic gas exhaust abatement system. CVD Equipment Corp., Ronkonkoma, NY; ph 516/981-7081, fax 516/981-7095.