Electronic materials defects book Electronic materials defects book

09/01/1997

Electronic materials defects book

This 710-page volume titled Defects in Electronic Materials II is a collection of research papers from the 1996 Materials Research Society (MRS) meeting in Boston, MA, on problems, progress, and methods in defect studies in electronic materials. Topics include: new techniques in defect studies; processing induced defects - plasma-induced point defects, defects and gate oxide integrity, and point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in Group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds; defects in III-V layers and structures; and wide-bandgap materials - II-VI compounds, SiC, and diamond. ISBN 1-55899-346-0. Price: $65 (MRS member), $75 (US list), $86 (non-US). MRS, Pittsburgh, PA; ph 412/367-3012, fax 412/367-4373, e-mail [email protected], www.mrs.org/publications/books/forms/.