Small-footprint Furnace

08/01/1997

Instrumented wafers

Process Probe 1840 instrumented silicon wafers, with up to 31 integrated resistance temperature detectors, measure wafer process temperatures from 0-230?C to <0.1?C absolute accuracy, and uniformities to <0.05?C point-to-point precision at the wafer, in situ, under process conditions. Developed for DUV chemically amplified resist processes, they also meet the needs of i-line lithography and high-temperature wafer processing. By measuring wafer temperature directly, in situ, the influences of exhaust flow, purge gas flow rate, and chamber design in proximity bake processes can be precisely determined. SensArray Corp., Santa Clara, CA; ph 408/727-4656, fax 408/496-6929.