Metal Etch system

07/01/1997

Metal etch system

Based on Transformer Coupled Plasma etch technology, the TCP 9600PTX metal etch system includes a microwave stripper that provides damage-free post-metal etch photoresist strip and passivation, while maintaining high strip rates. The system meets all requirements for aluminum and tungsten interconnect etch processing in 0.25-?m designs and below. It is integrated on the Alliance multichamber cluster platform, for high throughput with a small footprint. The chamber is designed for improved uniformity, precise profile and CD control, and a wide process window. Typical CD bias is <0.02 ?m, while achieving photoresist selectivity as high as 4:1 for aluminum etch and 2:1 for tungsten etch, with etch uniformity of <8%, 3s. The microwave strip process is optimized for strip rates of 5-9 ?m/min, while effectively eliminating post-etch corrosion. The downstream microwave strip source ensures superior gate oxide integrity for film thicknesses of =60?. Lam Research Corp., Fremont, CA; ph 510/572-6848, fax 510/572-6454, e-mail [email protected].