Thin-film metallization

06/01/1997

Thin-film metallization

MB2-730 CVD process technology yields good film properties for thin-film metallization applications. Features include: ClF3 cleaning technology that eliminates process hardware plasma damage; up to three independent vacuum-isolated process modules for integrated, serial, or parallel deposition; dual wafer loadlock stations that reduce potential throughput bottlenecks; minimized cleanroom overhead through remote location of ancillary equipment; high deposition uniformity processes, due to temperature uniformity and computer-modeled gas mixing design; and ultraclean gas system component design and assembly methods to ensure low defect densities. Tokyo Electron America, Austin, TX; ph 512/424-1218, fax 512/424-1040.