SMIF enclosure for CV/IV system
05/01/1997
Ion implanter for AMLCDs
Specifications for this ion implanter, designed for AMLCDs, are throughput of >60 sheets/hour for doses to 2 ? 1015 ions/cm2; maximum plate size of 600 ? 720 mm; an RF excited ion source (no filament) producing ion species of P, B, and H over a range of 2-100 keV, with a maximum current density of 100 dopant ?A/cm2, adjustable H+ content, and a uniformity of 5% over the dose range 5 ? 1011 to 1 ? 1016 ions/cm2. The system features a closed-loop, real-time dose control system that incorporates mass spectral beam diagnosis. The temperature control system limits substrate temperature to <120?C for plates with resist. Footprint - without factory interface robot - is 243 ? 491 ? 251 cm (W, L, H). Eaton Corp. Semiconductor Equipment Operations, Beverly, MA; ph 508/524-9233, fax 508/524-9224.