Wafer analysis samples

02/01/1997

Wafer analysis samples

An analytical technique has been developed to test for trace metals and implant cross-contamination at E11 levels in silicon dioxide layers. Initially developed on implanters that can sputter metals during implant, the procedure is equally applicable to plasma etch, RTA, TEOS, CVD, and standard furnace oxidations. The technique is useful to qualify maintenance procedures and new equipment. Sample results are available showing cross-dopant contamination and trace metals contamination during implants. Price: Sample results and wafer preparation information, free to interested semiconductor professionals; wafer analysis, $200. Process Analytics, Orem, Utah; ph 801/221-1508, fax 801/221-1121.