CVD/PVD system

01/01/1997

CVD/PVD system

Liner TxZ Centura is a fully integrated system that combines a CVD titanium nitride chamber with a Coherent PVD titanium chamber. By combining the two chambers on the Centura plat-form, semiconductor manufacturers can deposit sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum, thereby controlling the growth of unwanted oxide between processing steps. The system also provides good TiN step coverage at low temperatures, suiting it for the advanced multilevel metallization schemes of =0.35-?m generation devices. The TxZ chamber offers good particle and MWBC performance and has no consumable parts. MWBC is >3000, and average in-film particle density is <0.05/cm2 at 0.2 ?m. The CVD TiN process provides high conformal coverage in 0.25-?m diameter, 4:1 aspect ratio contacts at low temperatures. The resulting film is essentially stress-free. Applied Materials, Santa Clara, CA; ph 408/727-5555, fax 408/986-8352.