Toshiba introduces new medium-power packages

11/01/2001

IRVINE, CALIF. - Toshiba America Electronic Components Inc. has expanded its lineup of medium-power packaging solutions to include US-Flat, S-Flat, M-Flat, thin flat package (TFP) and VS-6 devices. In addition, the company introduced its U-MOS III third-generation trench cell technology for power semiconductors.

Toshiba's new packages are among the thinnest surface mount solutions currently available for portable and wireless products. The US-Flat package has a mounting area that is 28 percent the size of a standard I-Flat (SMA) package and a height that is 32 percent the size of the I-Flat. Designed to be used for Schottky barrier diodes (SBD) in portable and wireless applications, the package has an optimized lead clamp structure designed to field a higher current than the traditional wirebonded structure. The US-Flat can handle 0.7 amps or 0.6 watts of power and has a surge capability of 20 amps.

The S-Flat is 50 percent smaller than the I-Flat and is designed for use in general purpose rectifiers, SBDs, power zener diodes and high-efficiency diodes. The M-Flat is 52 percent the height of the I-Flat and is designed for SBDs, while the TFP package is available in MOSFETs, SBDs and high-speed diode devices and is approximately 40 percent smaller than conventional D2PAK devices. The TFP allows for a drain current up to 75 amps and features a four-pin structure.

The new VS-6 package is designed for use as a power MOSFET and is 20 to 40 percent thinner and 20 percent lighter than a standard six-pin package. It can serve as a direct replacement for TSOP6 and SM6 packages.