10/05/2012 

ON Semiconductor has joined imec to collaborate on the development of next-generation GaN-on-Si power devices. ON Semiconductor is presently building a GaN processing line in its Oudenaarde facility in Belgium Oudenaarde, and it is expected to employ GaN-on-Si technology.

10/04/2012 

Responding to consumer demand, TV suppliers are expanding their lineups of low-brightness LED backlight TVs with technology options that actually compete against each other more than traditional CCFL, according to DisplaySearch.

10/03/2012 

Even though semiconductor manufacturers in Japan are consolidating and transitioning to a "fab-lite" strategy,  the region still represents a large installed fab capacity and a major market for equipment and materials suppliers.

10/02/2012 

Driven by market demand, the semiconductor industry is progressing toward consensus on building-block standards for automating LED production on 6-in wafers, explains Paula Doe in an article for SST sister magazine LEDs Magazine.

09/26/2012 

Sumitomo Chemical has joined the Holst Center's shared research program on printed organic lighting and signage, to contribute to research into multilayer solution processes for high-efficiency organic light-emitting diodes (OLEDs).

09/14/2012 

DAS Environmental Expert says it has a new system that offers a more environmentally friendly way to clean waste process gases produced in LED manufacturing.

09/12/2012 

Researchers at the Norwegian University of Science and Technology in Trondheim (NTNU)  have patented and are commercializing GaAs nanowires grown on graphene.

09/12/2012 

Stakeholders in LED manufacturing have met with US Department of Energy officials to plead their case for increased support in solid-state lighting (SSL) R&D and manufacturing, asserting that the technology's energy conservation benefits and ROI surpasses those of renewable energy technologies that get much more backing.

09/06/2012 

GaAs epitaxial substrate production rose just 3% in 2011 as handset power amplifiers offset a shift away from GaAs for handset switches, but inside that slowing slope are two key market drivers, according to Strategy Analytics.

08/31/2012 

Three leaders in their respective fields have formed a technology alliance to bring a new glass cutting technology to market. InnoLas Systems GmbH licensed process technology developed by FiLaser LLC and will use ultra-short pulse lasers produced exclusively for InnoLas by LUMERA LASER GmbH.

08/31/2012 

Cree announced the availability of high quality, low micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers. 150mm epitaxial wafers with highly uniform epitaxial layers as thick as 100µm are available for immediate purchase

08/23/2012 

MIT researchers are building various electronic components out of a 2D form of molybdenum disulfide (MoS₂). This is the start of a “new realm” of research into 2D materials for electronic materials and devices, according to one researcher.

08/23/2012 

Optoelectronics researchers at the Ferdinand-Braun-Institut ordered an Optofab3000 for Laser Bar Facet Coating from Oxford Instruments Plasma Technology.

08/23/2012 

Rambus Inc. (NASDAQ:RMBS), a technology licensing company, will undergo a restructuring and related cost saving measures to cut its expenses by$30-35 million annually.

08/23/2012 

JP Sercel Associates' new IX-6100-MD can scribe and dice a variety of metal layers and alloys used in LED manufacturing.

08/22/2012 

H2 2011 saw slow growth for gallium arsenide (GaAs) substrates in semiconductor and related devices, as well as a shift away from GaAs as a handset switch technology. However, the March 2011 earthquake and tsunami in Japan disrupted the supply chain, driving up substrate pricing and overall revenue to nearly $230 million.

08/22/2012 

Learn about the changes in semiconductor manufacturing as well as related markets -- photovoltaics, displays, LEDs, etc -- at the 2012 Strategic Materials Conference (SMC), to be held on October 23-24 in San Jose, CA. SEMI reports.

08/20/2012 

OSRAM AG and Samsung Electronics Co., Ltd. have reached an agreement to settle all patent suits between them worldwide. The parties have reached license agreements for their respective LED patent portfolios.

08/17/2012 

Jilin University China has installed an AIXTRON CCS MOCVD 3 x 2” wafer configuration system for GaN UV and white LED research.

08/15/2012 

LED maker Epistar will completely take over its subsidiary Huga Optotech, which produces LED wafers and chips, through a share swap.