Lithography

LITHOGRAPHY ARTICLES



IBM, JSR: Immersion can extend past 32nm node

02/21/2006  February 21, 2006 - IBM Corp., along with Tokyo-based JSR Corp. and its US subsidiary JSR Micro Inc., say they have demonstrated sub-30nm patterning using deep-ultraviolet (DUV) 193nm optical lithography, indicating that immersion lithography can be extended to and beyond the 32nm node.

Mentor preps mask data tool for 45nm node

02/17/2006  February 17, 2006 - Mentor Graphics Corp., Wilsonville, OR, said its new Calibre MDP mask data preparation tool suite has been qualified for production at IDMs for 45nm process technology in flows based on the OASIS stream format.

Nikon first out of gates with production immersion tool

02/17/2006  Nikon Corp. says it has shipped the world's first production immersion lithography system to a memory chip manufacturer using 55nm process technologies, and for R&D on 45nm devices.

SEMATECH North achieves critical cleaning milestone for EUV mask blanks

02/17/2006  February 14, 2006 -- /MARKET WIRE/ -- ALBANY, NY -- SEMATECH North researchers working on extreme ultraviolet lithography (EUVL) have achieved an important breakthrough in the complex process of cleaning mask blanks, the base material for the stencil-like photomasks that are used to describe patterns on semiconductor wafers.

Notre Dame eyes magnetic logic

02/16/2006  February 16, 2006 - Researchers at the U. of Notre Dame have developed a prototype demonstrating a chip design approach that utilizes tiny magnets for logic functions instead of electrical transistors.

KLA upgrades Starlight photomask inspection tool

02/15/2006  February 15, 2006 - KLA-Tencor Corp., San Jose, CA, has introduced an upgrade to its Starlight photomask inspection system, offering contamination inspection for all types of photomasks, including mainstream extreme resolution enhancement technique (XRET) photomasks, at the 65-nm node and below.

SEMATECH touts zero-defect milestone for EUV mask blanks

02/15/2006  February 15, 2006 - Researchers at SEMATECH North in Albany, NY, claim to have achieved total removal of particles as small as 43nm from quartz substrates, nearly the 40nm benchmark necessary required for pilot lines using extreme ultraviolet (EUV) lithography techniques.

New SEMI tech standards address compound semis

02/14/2006  February 14, 2006 - SEMI has published 14 new technical standards as part of its 3x/year schedule. The group includes several applicable to the emerging growth area of compound semiconductors.

Image Technology announces the acquisition of their new Lasertec Large Area photomask defect inspection tool

02/13/2006  February 8, 2006 -- /(BUSINESS WIRE)/ -- PALO ALTO, Calif. -- Image Technology, the premier leading supplier of 1X full-field photomasks, today announced that it has acquired a Lasertec Large Area Mask (LAM) defect inspection tool to enhance their full production line for advanced 9-inch photomasks.

RIT touts litho "breakthrough" with EWL

02/09/2006  February 9, 2006 - Researchers at the Rochester Institute of Technology have developed a new lithography method that they claim achieves results comparable with extreme-ultraviolet (EUV) lithography, and five years before requirements by the International Roadmap for Semiconductors.

Image Technology Acquires LAM Defect Inspection Tool

02/09/2006  Palo Alto, CA — 1× full-field photomasks supplier Image Technology, a wholly owned subsidiary of SUSS MicroTec, has acquired a Lasertec Large Area Mask (LAM) defect inspection tool to enhance their full production line for advanced 9-in. photomasks.

Startup Invarium debuts 65-45nm IC layout tool

02/08/2006  February 8, 2006 - Invarium Inc., San Jose, CA, has introduced a new product that it claims is superior to current RET and OPC tools for patterning IC layouts of 65nm- and below chipmaking processes, with an eye toward 32nm and EUV lithography.

SEMICON Japan: Suppliers tout immersion and EUV progress

02/08/2006  By Masataka Tsubo, WaferNews Contributing Editor, Japan

With 65nm production ramping, the focus at SEMICON Japan in December turned to cutting-edge technology for 45nm production and 32nm development, leaving lithography suppliers in the unenviable position of midwifing two new exposure technologies into production at once.

Fluidigm's fab anchors Singapore's biotech hub

02/06/2006  Gajus Worthington knew three years ago that he needed to find a manufacturing site for Fluidigm Corp. The San Francisco Bay-area company had already released its first generation microfluidic biochip for analyzing proteins and was poised to ramp up production.

Infineon touts first outsourced 65nm chips

02/01/2006  February 1, 2006 - In the first achievement under its new "fab lite" business model, Infineon Technologies AG has produced sample 65nm chips, leveraging technologies developed under an alliance with IBM, Chartered, and Samsung.

IBM snaps up Inficon's process-control software IBM snaps up Inficon's process-control software

01/27/2006  January 27, 2006 - In a move to bolster its lineup of factory process-control options, IBM Corp. has acquired the Argus line of lithography advanced process control software and related IP from Inficon.

ASMI clamping down on deposition, ALD development

01/27/2006  January 27, 2006 - In an move to return to profitability for all of its frontend segments, ASM International NV, Bilthoven, The Netherlands, said that it will scale back its NuTool operation to license the technology, and consolidate its wafer-handling platforms.

EUV firm gets boost with Intel funding

01/27/2006  January 27, 2006 - Xtreme Technologies GmbH, a joint venture between Jenoptik AG and Ushio Inc. developing light sources for extreme-ultraviolet (EUV) photolithography, has received an undisclosed amount of funding from Intel Corp.'s investment arm to accelerate development and commercialization of the technology.




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As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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