01/24/2019  In the quest for smaller, faster 2D processors, NYU Tandon-led research team invents thermal lithography process for higher quality, lower cost, and mass production potential.

01/23/2019  New printing technique and materials could be used to develop intelligent materials and self-adaptive infrastructures and transducers.

01/22/2019  SEMI met with Jay Zhang, business development director at Corning Incorporated, to discuss recent innovations at Corning that allow fine granularity CTE engineering as well as high Young’s modulus.

01/22/2019  Corning Incorporated today introduced its latest breakthrough in glass substrates for the semiconductor industry – Advanced Packaging Carriers.

01/15/2019  Process control systems used for advanced packaging of DRAM products in Korea and China facilities; additional orders expected to meet capacity ramp.

01/14/2019  Researchers of the Eindhoven University of Technology (TU/e) have developed a 'hybrid technology' which shows the advantages of both light and magnetic hard drives. Ultra-short (femtosecond) light pulses allows data to be directly written in a magnetic memory in a fast and highly energy-efficient way. This research, published in Nature Communications, promises to revolutionize the process of data storage in future photonic integrated circuits.

01/10/2019  Nanometer-sized tubes made from simple benzene molecules.

12/20/2018  Today, it is crystal-clear that, from theoretical point of view, GaN offers fantastic technical advantages over traditional Si MOSFETs.

12/19/2018  A research study on low noise and high-performance transistors led by Suprem Das, assistant professor of industrial and manufacturing systems engineering, in collaboration with researchers at Purdue University, was recently published by Physical Review Applied.

12/18/2018  Researchers at the University of Florida, the U.S. Naval Research Laboratory and Korea University provide a detailed perspective on the properties, capabilities, current limitations and future developments for one of the most promising UWB compounds, gallium oxide.

12/14/2018  MIT researchers have invented a way to fabricate nanoscale 3-D objects of nearly any shape. They can also pattern the objects with a variety of useful materials, including metals, quantum dots, and DNA.

12/10/2018  X-ray experiments at Berkeley Lab provide first demonstration of room temperature switching in ultrathin material that could serve as a 'topological transistor'.

12/04/2018  A team of scientists from Arizona State University's School of Molecular Sciences and Germany have published in Science Advances online today an explanation of how a particular phase-change memory (PCM) material can work one thousand times faster than current flash computer memory, while being significantly more durable with respect to the number of daily read-writes.

11/29/2018  Industry's most advanced high-speed SiGe technology now available on 300mm manufacturing line for terabit communications and automotive radar applications.

11/19/2018  Functionalizing silicon with other compounds could make light-based signaling feasible.

11/16/2018  A team of researchers from Siberian Federal University (SFU) obtained thin copper/gold and iron/palladium films and studied the reactions that take place in them upon heating. Knowing these processes, scientists will be able to improve the properties of materials currently used in microelectronics.

11/16/2018  Applied Materials, Inc. today announced plans for the Materials Engineering Technology Accelerator (META Center), a major expansion of the company's R&D capabilities aimed at creating new ways for Applied and its customers to drive innovation as classic Moore's Law scaling becomes more challenging.

11/15/2018  Cabot Microelectronics Corporation (Nasdaq: CCMP), today announced that it has completed its previously announced acquisition of KMG Chemicals, Inc. 

11/14/2018  A team from the University of Washington and the National Tsing Hua University in Taiwan announced that it has constructed functional metalenses that are one-tenth to one-half the thickness of the wavelengths of light that they focus. Their metalenses, which were constructed out of layered 2D materials, were as thin as 190 nanometers -- less than 1/100,000ths of an inch thick.

11/13/2018  Scientists at Nagoya Institute of Technology (NITech) and collaborating universities in Japan have gained new insights into the mechanisms behind degradation of a semiconductor material that is used in electronic devices.