02/02/2016  Researchers at the National University of Singapore and Yale-NUS College have established the mechanisms for spin motion in molybdenum disulfide, an emerging 2-dimensional material.

02/01/2016  The end of Moore's Law -- the prediction that transistor density would double every two years -- was one of the hottest topics in electronics-related discussions in 2015.

02/01/2016  Sweden-based SiC CVD developer and manufacturer Epiluvac AB has entered into a collaboration with SAMCO, a semiconductor process equipment developer and manufacturer based in Japan, in which Epiluvac will introduce new clients to SAMCO in Sweden, Norway, Finland and Denmark.

01/29/2016  MIT researchers and their colleagues report the first chip-fabrication technique that enables significantly different materials to be deposited in the same layer.

01/28/2016  A research team at Umeå University in Sweden has showed, for the first time, that a very efficient vertical charge transport in semiconducting polymers is possible by controlled chain and crystallite orientation.

01/27/2016  The Center for Integrated Nanostructure Physics (CINAP) within IBS has reported results correlating the flake merging angle with grain boundary (GBs) properties, and proven that increasing the merging angle of GBs drastically improves the flow of electrons.

01/22/2016  Fujifilm Corporation recently announced that its semiconductor business subsidiary, FUJIFILM Electronic Materials Co.,Ltd. will build a new plant for manufacturing advanced semiconductor materials in the city of Tainan, to expand its production in Taiwan.

01/20/2016  A newly developed method has opened up new possibilities in carbon nanotube development.

01/20/2016  Two MIT researchers have developed a thin-film material whose phase and electrical properties can be switched between metallic and semiconducting simply by applying a small voltage.

01/19/2016  Researchers have created nanoribbons of an emerging class of materials called topological insulators and used a magnetic field to control their semiconductor properties, a step toward harnessing the technology to study exotic physics and building new spintronic devices or quantum computers.

01/13/2016  While oxygen can impede the effectiveness of gallium nitride (GaN), an enabling material for LEDs, small amounts of oxygen in some cases are needed to enhance the devices' optical properties.

01/12/2016  Stanford University researchers sponsored by Semiconductor Research Corporation (SRC) have developed a new area selective atomic layer deposition (ALD) process that promises to accelerate the manufacturing of higher performing, more energy efficient semiconductors.

01/08/2016  OIST researchers conduct the first atomic resolution study of perovskites used in next generation solar cells.

01/08/2016  Worldwide semiconductor revenue totaled $333.7 billion in 2015, a 1.9 percent decrease from 2014 revenue of $340.3 billion, according to preliminary results by Gartner, Inc.

01/08/2016  AKHAN Semiconductor, Inc. this week announced that it is deploying 200mm manufacturing equipment and process in its new production facility in Gurnee, Illinois, continuing its preparation for delivering AKHAN diamond semiconductor based-technology products to the company’s first commercial customer this quarter.

01/08/2016  Chemical interconnection bridges electronic properties of graphene-nanoribbons with zigzag-edge features.

01/08/2016  When people think about Wide Band Gap (WBG) materials for power electronics applications, they usually think of GaN or SiC. However, there are materials with an even larger band gap which can further increase power device performance.

01/07/2016  Imaging method allowed researchers to measure the nanotube quantum capacitance-a very unique property of an object from the nano-world.

01/07/2016  The Critical Materials Council for Semiconductor Fabricators, originally established by ISMI/SEMATECH in the early 1990’s, will be managed by TECHCET CA LLC starting January 01, 2016.

01/05/2016  An international team of researchers including Professor Federico Rosei and members of his group at INRS has developed a new strategy for fabricating atomically controlled carbon nanostructures used in molecular carbon-based electronics.