07/27/2018  Growing a batch of carbon nanotubes that are all the same may not be as simple as researchers had hoped, according to Rice University scientists.

07/26/2018  In a paper published online this spring in the journal Nature Photonics, scientists at the University of Washington report that a prototype semiconductor thin-film has performed even better than today's best solar cell materials at emitting light.

07/26/2018  JUMP program funds 24 new research projects to amplify mission of its six innovation centers.

07/24/2018  Applied Materials, Inc. today announced it has been awarded a contract by the Defense Advanced Research Projects Agency (DARPA) to develop a new type of electronic switch for artificial intelligence that mimics the way the human brain works to enable dramatic improvements in performance and power efficiency.

07/23/2018  3D sensing in mobile phone as well as LiDAR’s applications are giving a new breath for GaAs substrates suppliers.

07/23/2018  Using advanced fabrication techniques, engineers at the University of California San Diego have built a nanosized device out of silver crystals that can generate light by efficiently "tunneling" electrons through a tiny barrier. The work brings plasmonics research a step closer to realizing ultra-compact light sources for high-speed, optical data processing and other on-chip applications.

07/20/2018  Storage and memory chipmaker and SEMI China member Tsinghua Unigroup is gearing up to meet burgeoning product demand with huge investments in its manufacturing plants.

07/19/2018  Rahul Goyal of Intel has been elected to a one-year term as board chair of Silicon Integration Initiative, a research and development joint venture that provides standard interoperability solutions for integrated circuit design tools.

07/19/2018  A new theoretical study explains previous mystifying experimental results, in which coupled charged particles moved in exactly the opposite direction to that predicted. This apparently contradictory phenomenon is associated with the bandgap in dual-layer graphene structures, a bandgap which is very much smaller than in conventional semiconductors.

07/19/2018  New material draws heat away from hotspots much faster than current materials.

07/18/2018  The international team of scientist found a way to improve nanocomposite material to use it in hydrogen economy.

07/17/2018  Scientists at NUS have discovered a new way to closely look at the electronic quantum behaviour of materials, giving a deeper understanding of how they could be used for future quantum computing applications.

07/12/2018  Nitrous oxide (N2O) has a variety of uses in the semiconductor manufacturing industry. It is the oxygen source for chemical vapor deposition of silicon oxy-nitride (doped or undoped) or silicon dioxide, where it is used in conjunction with deposition gases such as silane.

07/11/2018  Industry-inclusive hub promotes early collaboration and learning from substrate to system level.

07/11/2018  Intel has won SEMI's 2018 Award for the Americas. SEMI honored the celebrated chipmaker for pioneering process and integration breakthroughs that enabled the first high-volume Integrated Silicon Photonics Transceiver. The award was presented yesterday at SEMICON West 2018.

07/11/2018  SEMI yesterday honored two industry leaders at SEMICON West 2018 for their outstanding accomplishments in developing Standards for the electronics and related industries.

07/10/2018  Increasingly complicated 3D structures such finFETs and 3D NAND require very high aspect ratio etches. This, in turn, calls for higher gas flow rates to improve selectivity and profile control. Higher gas flow rates also mean higher etch rates, which help throughput, and  higher rates of removal for etch byproducts.

07/09/2018  To eliminate voids, it is important to control the process to minimize moisture absorption and optimize a curing profile for die attach materials.

07/06/2018  Researchers at the University of Texas at Dallas and their collaborators have created and characterized tiny crystals of boron arsenide.

07/03/2018  A Tokyo Institute of Technology research team has shown copper nitride acts as an n-type semiconductor, with p-type conduction provided by fluorine doping, utilizing a unique nitriding technique applicable for mass production and a computational search for appropriate doping elements, as well as atomically resolved microscopy and electronic structure analysis using synchrotron radiation.