Materials

MATERIALS ARTICLES



Controlling the crystal structure of gallium oxide

05/03/2018  A simple method that uses hydrogen chloride can better control the crystal structure of a common semiconductor and shows promise for novel high-powered electronic applications.

ALLVIA adds capabilities for through-quartz vias

05/02/2018  To meet growing market demand for high-density 2.5D and 3D stacked semiconductor solutions, Silicon Valley-based ALLVIA, Inc. has expanded its in-house capabilities to include the formation of through-quartz vias (TQV) ranging from 15 microns in diameter and 100 microns deep to 50 microns in diameter and 250 microns deep.

One-dimensional material packs a powerful punch for next generation electronics

05/02/2018  The new technology has applications in nanometer-scale transistors and circuits.

Speeding up material discovery

04/30/2018  Algorithm take months, not years, to find material for improved energy conversion.

Cell membrane inspires new ultrathin electronic film

04/26/2018  Japanese researchers have developed a new method to build large areas of semiconductive material that is just two molecules thick and a total of 4.4 nanometers tall.

Cheaper and easier way found to make plastic semiconductors

04/25/2018  Cheap, flexible and sustainable plastic semiconductors will soon be a reality thanks to a breakthrough by chemists at the University of Waterloo.

SEMI reports 2017 global semiconductor materials sales of $46.9B

04/24/2018  SEMI, the global industry association representing the electronics manufacturing supply chain, today announced that in 2017 the global semiconductor materials market grew 9.6 percent while worldwide semiconductor revenues increased 21.6 percent from the prior year.

Graphene sets a new record on squeezing light to one atom

04/23/2018  In a recent study published in Science, researchers at ICFO - The Institute of Photonic Sciences in Barcelona, Spain, along with other members of the Graphene Flagship, reached the ultimate level of light confinement. They have been able to confine light down to a space one atom, the smallest possible. This will pave the way to ultra-small optical switches, detectors and sensors.

Versum Materials celebrates the grand opening of its research and development facility in Hometown, PA

04/20/2018  Versum Materials, Inc. announced today the grand opening of its new research and development (R&D) facility at its semiconductor materials manufacturing site in Hometown, Pennsylvania.

Robot developed for automated assembly of designer nanomaterials

04/20/2018  A current area of intense interest in nanotechnology is van der Waals heterostructures, which are assemblies of atomically thin two-dimensional (2D) crystalline materials that display attractive conduction properties for use in advanced electronic devices.

New research could literally squeeze more power out of solar cells

04/20/2018  Physicists at the University of Warwick have published new research in the journal Science April 19, 2018, (via the Journal's First Release pages) that could literally squeeze more power out of solar cells by physically deforming each of the crystals in the semiconductors used by photovoltaic cells.

Ultrafast electron oscillation and dephasing monitored by attosecond light source

04/18/2018  YNU and NTT researchers observed petahertz electron oscillation using chromium doped sapphire solid-state material.

From insulator to conductor in a flash

04/17/2018  A clever combination of novel technologies enables us to study promising materials for the electronics of tomorrow. Using short laser pulses, a research team led by Misha Ivanov of the Max Born Institute in Berlin together with scientists from the Russian Quantum Center in Moscow have now shed light on the extremely rapid processes taking place within novel materials.

Polymer-graphene nanocarpets to electrify smart fabrics

04/17/2018  Polymer carpets based on graphene could make any fabrics generate current.

Similar charges are attracted to each other

04/13/2018  NUST MISIS scientists have finally found out why a material that could potentially become the basis for ultra-fast memory in new computers is formed. Professor Petr Karpov and Serguei Brazovskii, both researchers at NUST MISIS, have managed to develop a theory which explains the mechanism of the latent state formation in layered tantalum disulfide, one of the most promising materials for modern microelectronics.

Cree licenses GaN power patents to Nexperia

04/12/2018  Cree, Inc. announces that it signed a non-exclusive, worldwide, royalty-bearing patent license agreement with Nexperia BV, a Dutch company.

Mechanism of oxidative unzipping of multiwall carbon nanotubes to graphene nanoribbons

04/12/2018  While the bottom-up method provides a route to precise edge control, and the lithographic method can afford GNRs with precise placement, the unzipping method has the advantage of mass-production on a large scale.

Indium Corporation receives ON Semiconductor Award for "Perfect Quality"

04/10/2018  Indium Corporation, one of more than 3,000 ON Semiconductor production suppliers, was selected for its commitment to ensuring high quality and supply continuity in an evolving semiconductor market.

Diamond-based circuits can take the heat for advanced applications

04/10/2018  Researchers at Japan's National Institute for Materials Science developed a hydrogenated diamond circuit operational at 300 degrees Celsius.

ON Semiconductor selects Veeco tool for GaN electronics manufacturing

04/10/2018  Veeco Instruments Inc. today announced that ON Semiconductor (Nasdaq: ON) has ordered its Propel High-volume Manufacturing (HVM) Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) system.




WEBCASTS



Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

Date and time TBD

As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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