05/14/2018  Researchers at Queen Mary University of London, University of Cambridge and Max Planck Institute for Solid State Research have discovered how a pinch of salt can be used to drastically improve the performance of batteries.

05/11/2018  Moore's Law extended with the use of light.

05/09/2018  Air Liquide Advanced Materials, Inc. (ALAM) has been chosen by the New Jersey chapter of the Association for Corporate Growth as an honoree for the 2018 Corporate Growth Awards.

05/07/2018  Hematene joins parade of new 2D materials Rice University-led team extracts 3-atom-thick sheets from common iron oxide.

05/04/2018  The 2018 Critical Materials Council (CMC) Conference -- held April 26-27 at the Hilton Chandler in Arizona -- was a great gathering with presentations from Everspin, Intel, GlobalFoundries, and NXP discussing current fab challenges, and the relationships to near-term materials solutions.

05/03/2018  First demonstration of self-assembling and self-disassembling silicon microparticles could form the basis for designing artificial muscles and reconfigurable computer systems.

05/03/2018  A simple method that uses hydrogen chloride can better control the crystal structure of a common semiconductor and shows promise for novel high-powered electronic applications.

05/02/2018  To meet growing market demand for high-density 2.5D and 3D stacked semiconductor solutions, Silicon Valley-based ALLVIA, Inc. has expanded its in-house capabilities to include the formation of through-quartz vias (TQV) ranging from 15 microns in diameter and 100 microns deep to 50 microns in diameter and 250 microns deep.

05/02/2018  The new technology has applications in nanometer-scale transistors and circuits.

04/30/2018  Algorithm take months, not years, to find material for improved energy conversion.

04/26/2018  Japanese researchers have developed a new method to build large areas of semiconductive material that is just two molecules thick and a total of 4.4 nanometers tall.

04/25/2018  Cheap, flexible and sustainable plastic semiconductors will soon be a reality thanks to a breakthrough by chemists at the University of Waterloo.

04/24/2018  SEMI, the global industry association representing the electronics manufacturing supply chain, today announced that in 2017 the global semiconductor materials market grew 9.6 percent while worldwide semiconductor revenues increased 21.6 percent from the prior year.

04/23/2018  In a recent study published in Science, researchers at ICFO - The Institute of Photonic Sciences in Barcelona, Spain, along with other members of the Graphene Flagship, reached the ultimate level of light confinement. They have been able to confine light down to a space one atom, the smallest possible. This will pave the way to ultra-small optical switches, detectors and sensors.

04/20/2018  Versum Materials, Inc. announced today the grand opening of its new research and development (R&D) facility at its semiconductor materials manufacturing site in Hometown, Pennsylvania.

04/20/2018  Physicists at the University of Warwick have published new research in the journal Science April 19, 2018, (via the Journal's First Release pages) that could literally squeeze more power out of solar cells by physically deforming each of the crystals in the semiconductors used by photovoltaic cells.

04/18/2018  YNU and NTT researchers observed petahertz electron oscillation using chromium doped sapphire solid-state material.

04/17/2018  A clever combination of novel technologies enables us to study promising materials for the electronics of tomorrow. Using short laser pulses, a research team led by Misha Ivanov of the Max Born Institute in Berlin together with scientists from the Russian Quantum Center in Moscow have now shed light on the extremely rapid processes taking place within novel materials.

04/17/2018  Polymer carpets based on graphene could make any fabrics generate current.

04/13/2018  NUST MISIS scientists have finally found out why a material that could potentially become the basis for ultra-fast memory in new computers is formed. Professor Petr Karpov and Serguei Brazovskii, both researchers at NUST MISIS, have managed to develop a theory which explains the mechanism of the latent state formation in layered tantalum disulfide, one of the most promising materials for modern microelectronics.