12/08/2016  At this week's IEEE IEDM conference, imec, the research and innovation hub in nano-electronics and digital technologies showed for the first time a silicon (Si)-passivated germanium (Ge) nMOS gate stack with dramatically reduced interface defect density (DIT) reaching the same level as a Si gate stack and with high mobility and reduced positive bias temperature instability (PBTI).

12/07/2016  While exploring the atomic-level forces at play in a new type of computer chip, researchers found an energy-saving surprise that could translate into longer battery life for next-generation mobile devices.

12/05/2016  K Tsutsui at Tokyo Institute of Technology and colleagues in Japan have now shown that by scaling down size parameters in all three dimensions their device they can achieve significant energy savings.

12/05/2016  A simple solution-based electrical doping technique could help reduce the cost of polymer solar cells and organic electronic devices, potentially expanding the applications for these technologies.

12/02/2016  IBS & KAIST researchers clarify how laser annealing technology can lead to production of ultra thin nanomaterials.

12/02/2016  University of Texas at Dallas physicists have published new findings examining the electrical properties of materials that could be harnessed for next-generation transistors and electronics.

12/01/2016  12.1 percent efficiency for 16 cm² cell is the largest single to be independently certified with highest energy conversion efficiency.

11/30/2016  Collaborating German institutions bring complementary expertise to demonstrate piezoelectricity in SrTiO3.

11/22/2016  The global market for nanotubes was valued at $1,250.00 million in 2015 and is expected to grow at a CAGR of 17.9% during the forecast period 2016-2025.

11/14/2016  By modulating the flow of phonons through semiconductor nanowires, engineers can create smaller and faster devices.

11/10/2016  NYU Tandon researchers pioneer technique to grow monolayer tungsten disulfide for next-generation transistors, wearable electronics, and biomedical devices.

11/09/2016  Researchers are running structural studies using extensive numerical simulations on a supercomputer to study the motion of more than 500 atoms -- in an effort to determine the forces on each atom and the total energy via density functional calculations.

11/09/2016  Engineers at the University of California San Diego have fabricated the first semiconductor-free, optically-controlled microelectronic device.

11/09/2016  Worldwide silicon wafer area shipments increased during the third quarter 2016 when compared to second quarter 2016 area shipments according to the SEMI Silicon Manufacturers Group (SMG) in its quarterly analysis of the silicon wafer industry.

11/09/2016  Researchers at the Fraunhofer Institute for Solar Energy Systems ISE together with the Austrian company EV Group (EVG) have successfully manufactured a silicon-based multi-junction solar cell with two contacts and an efficiency exceeding the theoretical limit of silicon solar cells.

11/07/2016  SunEdison Semiconductor Limited announced today that it has received notice that the Investment Committee of the Ministry of the Economic Affairs of the Republic of China has approved the proposed acquisition of SunEdison Semiconductor by GlobalWafers Co., Ltd.

11/07/2016  Scientists at MIPT apply torsion to multiwall nanotubes to form bonds between them creating durable material.

11/03/2016  Adding hydrogen to graphene could improve its future applicability in the semiconductor industry, when silicon leaves off.

11/01/2016  Edwards and GlobalFoundries Singapore were recognized by Singapore’s National Environment Agency in the Best Practices category at the 2016 Energy Efficiency National Partnership (EENP) Awards.

10/31/2016  van der Pauw measurements with a parameter analyzer are examined followed by a look at Hall effects measurements.