02/29/2016  Scientists at Berkeley Lab developed a new imaging technique that greatly improves images of light elements using fewer electrons.

02/29/2016  A new one atom-thick flat material that could upstage the wonder material graphene and advance digital technology has been discovered by a physicist at the University of Kentucky.

02/19/2016  Soitec (Euronext), a manufacturer of semiconductor materials and a supplier of wafers for radio-frequency silicon-on-insulator (RF-SOI) applications, has begun mass production of 300mm RF-SOI substrates for mobile communications.

02/18/2016  Semiconductor lithographic use of Neon is increasing more rapidly than expected for several reasons including the delay of EUVL while demand for finer line width patterning is increasing.

02/17/2016  University of Colorado Boulder researchers have demonstrated the use of the world's first ultrafast optical microscope, allowing them to probe and visualize matter at the atomic level with mind-bending speed.

02/16/2016  A team of Korean researchers, affiliated with UNIST has recently pioneered in developing a new type of multilayered (Au NPs/TiO2/Au) photoelectrode that boosts the ability of solar water-splitting to produce hydrogen.

02/15/2016  Experiment with Berkeley lab-developed material shows promise for quantum information processing.

02/15/2016  University of Utah engineers have discovered a new kind of 2D semiconducting material for electronics that opens the door for much speedier computers and smartphones that also consume a lot less power.

02/11/2016  Physicists at the Technical University of Munich (TUM) have developed a nanolaser, a thousand times thinner than a human hair. Thanks to an ingenious process, the nanowire lasers grow right on a silicon chip, making it possible to produce high-performance photonic components cost-effectively. This will pave the way for fast and efficient data processing with light in the future.

02/08/2016  A novel SACVD PMD invention sets the benchmark for helium reduction efforts by achieving four key objectives: cost reduction, quality, process robustness and productivity.

02/05/2016  The road to more versatile wearable technology is dotted with iron. Specifically, quantum dots of iron arranged on boron nitride nanotubes (BNNTs).

02/04/2016  Scientists have devised a way to trap and arrange nanoparticles in a way that mimics the crystalline structure of diamond. The achievement of this complex yet elegant arrangement may open a path to new materials that take advantage of the optical and mechanical properties of this crystalline structure for applications such as optical transistors, color-changing materials, and lightweight yet tough materials.

02/02/2016  Researchers at the National University of Singapore and Yale-NUS College have established the mechanisms for spin motion in molybdenum disulfide, an emerging 2-dimensional material.

02/01/2016  The end of Moore's Law -- the prediction that transistor density would double every two years -- was one of the hottest topics in electronics-related discussions in 2015.

02/01/2016  Sweden-based SiC CVD developer and manufacturer Epiluvac AB has entered into a collaboration with SAMCO, a semiconductor process equipment developer and manufacturer based in Japan, in which Epiluvac will introduce new clients to SAMCO in Sweden, Norway, Finland and Denmark.

01/28/2016  A research team at Umeå University in Sweden has showed, for the first time, that a very efficient vertical charge transport in semiconducting polymers is possible by controlled chain and crystallite orientation.

01/27/2016  The Center for Integrated Nanostructure Physics (CINAP) within IBS has reported results correlating the flake merging angle with grain boundary (GBs) properties, and proven that increasing the merging angle of GBs drastically improves the flow of electrons.

01/22/2016  Fujifilm Corporation recently announced that its semiconductor business subsidiary, FUJIFILM Electronic Materials Co.,Ltd. will build a new plant for manufacturing advanced semiconductor materials in the city of Tainan, to expand its production in Taiwan.

01/20/2016  A newly developed method has opened up new possibilities in carbon nanotube development.

01/20/2016  Two MIT researchers have developed a thin-film material whose phase and electrical properties can be switched between metallic and semiconducting simply by applying a small voltage.