Semiconductors

SEMICONDUCTORS ARTICLES



AMAT-conductor-etch-system-debut

11/29/2010 

Applied Materials (AMAT) speaks about its new conductor etch system -- the Centris AdvantEdge Mesa Etch -- released at SEMICON Japan this week. The company sees the gap in the lithography roadmap is an etch opportunity. Thorsten Lill, VP Etch Business Group, at Applied, told ElectroIQ that new steps in advanced transistors, double-patterning, and advanced packaging are driving growth in the conductor etch market (~$1.6B market in 2010).

GE-intros-CT-system-for-3D-metrology-and-analysis

11/29/2010 

tsv ctThe phoenix nanotom m, from GE´s Inspection Technologies business, has been developed for high resolution and high precision X-ray computed tomography (CT) in non-destructive 3D analysis and 3D metrology.

UCSD-engineers-develop-pulse-compressor-on-silicon

11/29/2010 

University of California, San Diego (UC San Diego) engineers developed the first ultra compact, low power pulse compressor on a silicon chip to be described in the scientific literature.

Gate-first says Globalfoundries

11/29/2010 

Globalfoundries gate-first approach to HK+MG processingNick Kepler, Globalfoundries presenter at the IEEE Bay Area Nanotechnology Council’s Half-day Symposium, described the company’s rationale for selecting the gate-first approach to HK+MG processing. Kepler also discusses EUV lithography (EUVL) use at 20nm.

TSMC-work-on-Si-interposers-TSV-die-stacking

11/26/2010 

TSMC packaging interviewDi Ma spoke with Debra Vogler, senior technical editor, ElectroIQ, about TSMC's work with silicon interposers, die stacking with through-silicon vias (TSV), and gate-last transistor fab.

TSMC chooses gate-last on 28nm CMOS

11/26/2010 

Transistor architecture beyond HK+MG. SOURCE: TSMCFive factors drove TSMC's decision to select the gate-last approach: speed, power, reliability, manufacturability, and scalability. Di Ma, VP, field technical support at TSMC, speaks with ElectroIQ about TSMC’s efforts with respect to transistor architecture beyond HK+MG.

Tokyo-Electron-Tanaka-Kikinzoku-Kogyo-recycle-discarded-CVD-ruthenium-precursors

11/24/2010 

Tokyo Electron Limited and Tanaka Kikinzoku Kogyo K.K. have developed a sucessful recycling process for ruthenium precursors (CVD-ruthenium material) used in next-generation semiconductor miniaturization technology.

FDSOI-to-TSV-IEDM-preview-CEA-Leti research

11/24/2010 

CEA-Leti will present 10 papers, including two invited papers, at the IEDM/IEEE 2010 International Electron Devices Meeting December 6-8, in San Francisco, CA. The papers will cover More than Moore, FDSOI, memory (phase-change and charge-trapping), silicon nanowires, TSVs, high-k dielectrics, and more.

IBM-fine-pitch-substrate-bumping-skips-solder-paste-beyond-C4NP

11/23/2010 

IBM IMS process for substrate bumpingJae-Woong Nah, researcher at IBM's Thomas J. Watson Research Center, briefed ElectroIQ on his IMAPS conference paper: "Mask and mask-less injection molded solder (IMS) technology for fine-pitch substrate bumping." IMS is a variation of C4NP for solder deposition on fine-pitch laminates. Nah explains how the researchers injected 100% pure molten solder instead of solder paste with a reusable film mask for forming high-volume solder on fine-pitch substrates.

University of Tokyo first to demo III-V self-aligned source/drain

11/23/2010 

At the upcoming IEDM, researchers from Japan will show promising results of fabricating a Ni-InGaAs alloy to yield the first self-aligned source/drain III-V semiconductor MOSFETs.

FDSOI-to-TSV-IEDM-preview-CEA-Leti research

11/23/2010 

CEA-Leti will present 10 papers, including two invited papers, at the IEDM/IEEE 2010 International Electron Devices Meeting December 6-8, in San Francisco, CA. The papers will cover More than Moore, FDSOI, memory (phase-change and charge-trapping), silicon nanowires, TSVs, high-k dielectrics, and more.

Mattson-wins-etch-order-for-WLP-facility

11/23/2010 

Mattson Technology Inc. (NASDAQ: MTSN) received a repeat order for the Alpine etch system from a leading semiconductor manufacturer. The system will be used in the customer's leading-edge 300mm packaging facility in Asia for advanced wafer-level packaging processes.

CMP-retaining-rings from Willbe use molded Victrex PEEK design

11/23/2010 

cmp retaining ringWillbe S&T selected VICTREX PEEK polymer as the material in its chemical mechanical planarization (CMP) retaining rings. Willbe S&T’s insert molded CMP ring provides better performance, longer life and reduced cost compared to traditional two-piece bonded type CMP retaining rings made with stainless steel and polyphenylene sulfide.

IBM, Macronix identify phase-change memory failure mode: IEDM Preview

11/19/2010 

At the upcoming International Electron Devices Meeting (IEDM), researchers from IBM and Macronix will report on their findings of electromigration-induced failures when phase-change memory (PCM) cells are reverse-stressed.

ICPT 2010: CMP, new materials support push for smaller, faster, cheaper, greener ICs

11/19/2010 

A talk by Intel's Fab 11X manager kicking off this week's the International Conference on Planarization Technology about "challenges of manufacturing" rang true for many sectors of the chipmaking ecosystem, reports Techcet's Karey Holland.

15nm-nodes-Applied-Materials development work

11/19/2010 

15nm Applied Materials workChristopher Bencher, member of the technical staff at Applied Materials, gave a presentation at the IEEE Bay Area Nanotechnology Council’s Half-day Symposium on process and integration-based scaling for 15nm nodes. In an interview with Debra Vogler, senior technical editor, Bencher discussed the company’s development work at 15nm.

Record-photodiode-quantum-efficiency-IEDM-preview

11/16/2010 

QE photodiode recordLaura Peters, contributing editor, covers a team led by the National Nano Device Laboratories (Hsinchu, Taiwan), which has achieved a record external quantum efficiency (QE) of >80% for photodiodes in the visible regime. This QE was achieved by harnessing an LSPR effect, which enhances transmission efficiency in a conventional silicon photodiode. The team will present their results at IEDM.

optimized-cylinder-materials-for-hydrogen-bromide-for-silicon-etch

11/15/2010 

Minimize silicon trench etch process variations with optimized cylinder materials for hydrogen bromide deliveryHBr with consistently low water vapor levels is critical to prevent delivery system corrosion and device performance issues during trench etch for CMOS fabrication. Jianlong Yao et al, Matheson, present the effect of cylinder material on delivered moisture concentration in gas phase HBr. Polished AISI Cr-Mo steel, Nickel-lined AISI Cr-Mo steel, and 316L stainless steel cylinders show markedly different results.

Samsung-storms-DRAM-memory-sector-in-Q3, eyes market control in 2011

11/15/2010 

dram suppliersSamsung Electronics Co. Ltd. became the only Top 5 DRAM supplier to achieve revenue growth in Q3 2010, solidifying its domination of the market, according to the market research firm iSuppli Corp. Micron continued to stumble, but will it fall in 2011?

CMP-R-and-D-enhanced-with-Araca-Entrepix-partnership

11/15/2010 

Targeting CMP consumables suppliers, commercial device manufacturers, and academic R&D organizations, the agreement enables customers to leverage the combined strengths of both companies with in-depth analysis and fundamental research for virtually any aspect of CMP on any material.




WEBCASTS



Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

Date and time TBD

As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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