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WEBCASTS
 Environment, Safety & Health Date and time TBD The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.
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Wafer Processing Date and time TBD As the industry moves to 10nm and 7nm nodes, advances in wafer processing etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.
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The eBeam Initiative has several members jointly presenting the latest breakthroughs in DFEB mask technology at the SPIE/BACUS Symposium. The collaborative results demonstrate the effectiveness of DFEB mask technology on advanced photomasks at the 22-nm node and beyond. This article includes a podcast interview with the presenters.
Authors from Synopsys and IMEC assess the readiness of rigorous physical resist model calibration for accurate EUV lithography simulation. They discuss pattern selection for calibration, illustrate the speed and robustness of model building, and examine model validation results. Predictability of the resist model is demonstrated across various flare levels, pitches and critical-dimension ranges.
Professor Joel Plawsky and student Michael Riley of Rensselaer Polytechnic Institute will be presenting a paper titled “Experimental analysis of copper diffusion into porous SiCOH” at the Techcon 2010 conference. In a podcast interview, they outline the scope of their interconnect research on copper and porous SiCOH and its significance to the industry.
PolyU Researchers show that sandwiching a simple layer of silver nanoparticles can significantly improve the performance of organic transistors. This is expected to cut down the cost of memory devices such as touchscreens and e-books and improve their performance.
The IC community has been searching for a manufacturable low-k dielectric which could scale to below K = 2.0, says Dr. Phil Garrou. Microindent photos of uLK 124, released by SBA Materials show a clean ductile indent. SBA reports that their uLK materials can be integrated into existing fab lines using equipment and process flows already in place.