03/31/2017  An innovative new technique to produce the quickest, smallest, highest-capacity memories for flexible and transparent applications could pave the way for a future golden age of electronics.

03/31/2017  A new way to grow narrow ribbons of graphene, a lightweight and strong structure of single-atom-thick carbon atoms linked into hexagons, may address a shortcoming that has prevented the material from achieving its full potential in electronic applications.

03/30/2017  Researchers at North Carolina State University have developed a technique for converting positively charged (p-type) reduced graphene oxide (rGO) into negatively charged (n-type) rGO, creating a layered material that can be used to develop rGO-based transistors for use in electronic devices.

03/30/2017  New SIA-SRC report calls for robust research investments throughout the semiconductor industry and value chain.

03/30/2017  Huge spike in DRAM and NAND flash ASPs prompts market forecast revision to 11% increase.

03/29/2017  Intel Corporation today announced the appointment of Aicha S. Evans as chief strategy officer, effective immediately.

03/29/2017  Soitec and Silicon Genesis Corporation (SiGen) have successfully brought an end to the dispute regarding the importation and sale in the United States of certain silicon-on-insulator (SOI) wafers.

03/29/2017  Self-assembly technique could lead to long-awaited, simple method for making smaller microchip patterns.

03/27/2017  Silego Technology, a developer of Configurable Mixed-signal Integrated Circuits (CMICs), announced today an extension of its performance-driven GFET3 Integrated Power Switch (IPS) portfolio.

03/27/2017  New extreme-ultraviolet (EUV) lithography equipment unveiled by ASML, announcement by Intel of eight EUV programs ready to be rolled out, and introduction by IMEC of the industry’s first comprehensive solution for EUVL-enabled high-volume manufacturing systems were among highlights at SPIE Advanced Lithography 2017 in San Jose earlier this month.

03/27/2017  ATTOPSEMI Technology, Ltd. today announced that it has joined GLOBALFOUNDRIES' FDXcelerator Partner Program, to provide a scalable, non-volatile one-time programmable (OTP) memory IP to be compatible with GF's 22FDX technology.

03/27/2017  Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry's first GaN solution to earn automotive qualification -- having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.

03/27/2017  The selection recognizes Dr. Kim's leadership and strategic vision, as well as his undeniable impact in the semiconductor industries.

03/24/2017  Micron has now completed the title acquisition process for the new site.

03/24/2017  Ultratech, Inc. this week announced that two China foundries placed follow-on orders for laser spike anneal systems.

03/23/2017  Intel Corporation today announced that Omar Ishrak and Greg Smith have been elected to Intel’s board of directors.

03/23/2017  Microsemi Corporation, a provider of semiconductor solutions, today announced the planned closure of its manufacturing facility in China.

03/23/2017  Dr. Amos Sharoni of Bar-Ilan University's Department of Physics, and Institute of Nanotechnology and Advanced Materials (BINA), has now uncovered a new kind of memory effect, unrelated to memory effects previously reported.

03/23/2017  Uncommon form attenuates semiconductor's band gap size.

03/22/2017  Samsung Electronics Co., Ltd.today announced a successful network processor tape-out based on Samsung’s 14LPP (Low-Power Plus) process technology in close collaboration with eSilicon and Rambus.