Table of Contents
Solid State Technology
Year 2010
Issue 3
 | COLUMNS
Editorial
Beyond Silicon: What's Next?
Peter Singer, Editor-In-Chief
Industry Forum
Time to go labless for new product ramp-up
The semiconductor industry is ready to see a new foundry lik model emerge, supporting the transition to "Labless" manufacturing just as the development of foundries fostered the emergence of fabless semiconductor companies, Michel Villemain, Presto Engineering Inc., San Jose, CA USA
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DEPARTMENTS
World News.html
World News
Tech News
Novellus launches SOLA xT UVTP system for sub-45nm HVM
Tech News
ASM's PowerFill epi enables power management devices
Tech News
Study tracks concerns about using Cu bonding wire
Tech News
IBM, Fujifilm tweak BaFe particles for record magnetic tape data density
Tech News
Resetting the bar for fastest graphene transistor
Product News.html
Product News
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FEATURES
Ion Implantation
Comparative study of advanced boron-based ULE doping
B2H6 PLAD and B18H22 molecular implants demonstrate the best Rs-xj and abruptness characteristics, while beam-line BF2 implants as well as cluster B implants show worse Rs-xj characteristics.Shu Qin, Y. Jeff Hu, Allen McTeer, Micron Technology, Inc., Boise, ID USA
III V MOSFETs
III-V MOSFETs: beyond silicon technology
Results so far are highly encouraging for III-V MOSFETs to be used for ultra high speed, and ultra low power applications. Richard J.W. Hill, Jeff Huang, Joel Barnett, Paul Kirsch, Raj Jammy, SEMATECH, Austin TX USA
High K_metal Gate
Integrating high-k /metal gates: gate-first or gate-last?
For low power applications, gate-first is arguably the most appropriate choice, but for high performance applications, complex solutions (e.g., SiGe channel for pMOS) need to be considered in order to meet the performance requirements with a gate-first process.
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