Issue

According to the 2005 International Technology Roadmap for Semiconductors (ITRS), the industry should plan on shifting from 300mm to 450mm wafer production by the year 2012.

The practice of using design rules to communicate manufacturing capability to the design community failed with the advent of sub-wavelength imaging’s recommended and suggested design rules.

Manufacturers of carbon nanotubes (CNTs) or other low-power nanoscale devices continue to face challenges as potential uses for these devices grow.

Digital x-ray diffraction inspection of bare and patterned 300mm wafers is challenging conventional semiconductor wafer inspection systems.

Chipmakers are migrating to single-wafer tools, driven by the need for highly reliable processes that can meet the stringent performance and throughput requirements of state-of-the-art fabs.

Conventional precision engineering technologies are reaching their limits concerning minimum feature size and precision demands, so alternative technologies, such as LIGA (from the German acronym: lithographie, galvanik, abformung), gain importance [1].

Diamond thin film offers advantages over silicon and other thin-film materials used in micro- and nanofabrication.

The current International Technology Roadmap for Semiconductors (ITRS) requires that all defects ≥32nm on the EUV mask blank and ≥27nm on EUV substrates (i.e., mask blank before the multilayer [ML] coating) be removed by 2010.

The threshold voltages of CMOS transistors can vary significantly depending on their proximity to an implant well boundary.

There is a great deal of interest in the development of ink-jettable systems for RFID tags and other types of interconnection.