Issue

Harnessing the exotic properties of materials at the nanoscale promises huge societal benefits, from the production of clean energy to the treatment of deadly diseases.

Analysts surveyed by SST generally reviewed 2006 as a decent year for the semiconductor industry, if you take away a “bloodbath” in microprocessors and a surprising weakness in ASPs.

Yhe limitations of silicon are becoming more evident. Since the 90nm technology node, manufacturers have used silicon germanium (SiGe) source and drain regions, silicon carbide (SiC) liners, and other methods to strain the silicon channel.

S-FIL is a unique method for printing sub-100nm geometries [1-3]. When high-resolution alignment is needed, the S-FIL process uses field-to-field drop dispensing of UV curable liquids for step-and-repeat patterning.

CD budget constraints necessitate focus and dose monitoring as standard process procedure.

It is expected that single-exposure 193nm immersion lithography will reach the ultimate physical limits at the 32nm half-pitch technology node.

The 2006 International Electron Devices Meeting in San Francisco, Dec. 10, 13, may be remembered as the start of a trend toward 3D integrated circuits with stacked devices.

The display industry is growing at two to three times the rate of the semiconductor industry.

The semiconductor photomask industry business model has been changing since the advent of merchant shops in the 1980s, and the past 10 years have brought changes of epic proportions.

They say that the only constant in the integrated circuit industry is change. Every two years, Moore’s Law brings another technology generation.