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The integration of Cu interconnections will require sophisticated structures to prevent Cu from coming into contact with devices. Barrier layers must have good adhesion to both Cu and intermetal dielectrics, and yield desirable microstructure for the deposition of Cu. This paper discusses several critical barrier requirements, and compares the barrier properties of Ta and Ti/TiN layers.

The economic advantage of Safe Delivery Source gas source feed materials depends largely on maximum use of cylinder contents.

New noncontact metrology offers fast, effective control of metals, defect generation, and material properties in wafer fabs, particularly in diffusion process areas. Multisite and whole-wafer map measurements, which integrate surface photovoltage, contact potential difference, and sequential whole-wafer charge application from a corona emitter, can replace costly, slow, electrical device testing.

Customers of semiconductor fabs expect that every chip they buy will display identical performance characteristics. Since the early days of the industry, however, factory-wide systems needed to ensure the process stability and uniformity essential to meeting these customer expectations have been lacking. Both technical and cultural barriers must be overcome by a semiconductor maker at tempting to implement a systematic approach to factory-wide process control.

Semiconductor packaging is increasingly migrating toward the wafer level as manufacturers realize the significance of the cost reductions it can offer. These cost savings come from capitalizing on standard semiconductor processing equipment, fast turnaround times, flexibility to accommodate die shrinks, and capability for adopting wafer-level burn-in and test.

In a flurry of next-generation lithography (NGL) activity, three major stepper vendors, including an ASM Lithography-Applied Materials-Bell Labs alliance, have announced plans for development of post-optical technologies.

The Siemens-Motorola Semiconductor300 (SC300) joint venture in Dresden has produced its first fully functional 64-Mbit DRAMs on 300-mm wafers, about two months ahead of schedule. Plans for 1999 call for SC300 to develop a better characterization of its 0.25-?m process, provide feedback to tool suppliers, and prepare for trial production at smaller design rules. The 64-Mbit devices, identical to parts in production by Siemens on 200-mm wafers, have two metal layers and about 20 mask levels

Thermal management products, including recirculating chillers, ambient cooling systems, copper and stainless steel heat exchangers, oil coolers, and cold plates, are described in this online catalog. Of interest to engineers and designers seeking cooling products, the catalog provides specifications, performance data, and selection guidelines. It also includes information on thermal design principles; product weight and liquid volume; fluid properties; and conversion factors. Downloadable drawin

Cognex Corp., Natick, MA, has appointed Glenn R. Wienkoop COO of its Modular Systems Division. Prior to joining Cognex, Wien koop spent more than 20 years at Measurex Corp.

The LPF Fluorine laser series, the "Photonic Hammer," has high quantum energy of almost 8 eV carried by 157-nm photons. With pulse energies up to 25 mJ, repetition rates up to 300 Hz, and output power >5 W, the LPF series is suitable for micromachining tough materials (quartz/fused silica, Teflon/PTFE, and glass); for developing next-generation optics, resists, and scanners for DUV lithography at 157 nm; for micro-optic fabrication and testing; and for surface analysis. This company's innovative