Issue

Table of Contents Solid State Technology Year 2013 Issue 8	FEATURES Etch Moving atomic layer etch from lab to fab A new plasma-enhanced atomic layer etch method delivers atomic-level etch precision with process times that are practical for use in a manufacturing environment. FinFETs FinFET evolution for the 7nm and 5nm CMOS technology nodes In addition to extending the fin-based design investments, augmenting the FinFET for improved performance allows an evolution of the process infrastructure for a few more nodes. Power Electronics Advances in back-side via etching of SiC for GaN The development of an 85?m diameter, 100?m deep SiC back-side via etch process for production is described. Inspection Applying leading-edge non-visual defect inspection to a mainstream 200mm fab Improving economic competitiveness through cost reduction, cycle time improvement and more eco-friendly processing. 3D Integration A bilayer temporary bonding solution for 3D-IC TSV fabrication New technology eliminates the need for specialized equipment for wafer pre- or post-treatment.

EDITORIAL Industry Forum Green manufacturing: What you need to know Green is the color for the decade and future decades as each country is developing its own standards for energy consumption and implementing its green initiatives.

FEATURES