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Entegris to acquire ATMI


February 4, 2014

In a merger that will bring together two key suppliers in the semiconductor industry, Entegris, Inc. and ATMI today announced Entegris will acquire ATMI for approximately $1.15 billion, or approximately $850 million net of cash acquired, including the net cash proceeds from the sale of ATMI’s LifeSciences business of $170 million. The companies anticipate closing the transaction in the second quarter of 2014.

By leveraging ATMI’s market-leading critical products, global infrastructure and expertise in key processes, Entegris will have an even stronger platform to serve the demanding technology needs of the world’s largest semiconductor makers and other electronics companies. The transaction will also provide a broader set of growth opportunities, and the company will sustain its investments in R&D, infrastructure and metrology to support that growth.

“Upon closing, approximately 80% of our product sales will be unit-driven and focused on the most rapidly growing and critical areas of the semiconductor fab,” said Bertrand Loy, President and CEO of Entegris. “We are excited about the opportunities ahead and look forward to quickly realizing the significant benefits of this transaction for our shareholders, customers and employees.”

“Throughout this process, our goal has been to enter into a transaction that not only maximizes shareholder value, but also places our business with the right partner for our valued customers and employees,” said Doug Neugold, President and CEO of ATMI. “We are pleased to merge our microelectronics business into Entegris. Entegris’ global platform and complementary products represents a great opportunity for ATMI stakeholders, including our shareholders, who will receive an immediate premium for their investment.”

ATMI shareholders will receive $34.00 in cash, without interest or dividends, for each share of ATMI common stock they hold at the time of closing. The price represents a premium of 26.3 percent to ATMI’s closing price of $26.93 on February 3, 2014. The transaction is expected to yield approximately $30 million in annualized cost synergies. Entegris expects to fund the all-cash transaction with a combination of existing cash balances and additional committed debt financing.

Goldman, Sachs & Co. is serving as the exclusive financial advisor, and Ropes & Gray LLP is serving as legal counsel to Entegris. Barclays Capital is serving as the financial advisor and Weil, Gotshal & Manges LLP is serving as legal counsel to ATMI. Goldman Sachs Bank USA has been appointed to act as the lead arranger and bookrunner for the committed financing that has been obtained by Entegris in connection with the merger and the related transactions.

Compiled by Pete Singer, Editor-in-Chief; Edited by Shannon Davis, Web Editor

Internet of Things

We asked leading industry experts and analysts to give us their perspectives on what we can expect in 2014. All expect it to be a banner year for the semiconductor industry, as the world’s demand for electronics continues unabated. However, most believe we are seeing an era of unprecedented change, driven by a shift to mobile computing, the Internet of Things, higher wafer costs and difficult technical challenges. To address these challenges, new levels of innovation and collaboration will be needed.

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The market for 3DICs globally is forecast to reach USD 7.52 billion by 2019, according to a new market report published by transparency market research. The market growth is expected to be driven by increased demand for devices with exceptional speed, low power consumption, smaller chip size, and reduced response time. Information and communication technology (ICT) and consumer electronics are seen as emerging sectors for adoption of 3DICs and are expected to support the market growth during the forecast period 2013 – 2019.

Globally, 3DICs market was valued at USD 2.40 billion in 2012 and is forecast to grow at 18.1 percent CAGR from 2013 – 2019. Different end-use industry sectors such as consumer electronics, ICT, transport (automotive and aerospace), military and others (biomedical applications and R&D), are getting benefitted by 3DIC integration technology. The global 3DICs market in 2012 was dominated by the ICT sector, which accounted for 24.2 percent revenue share. The bandwidth requirement for high performance networking equipment and storage capacity of devices rises in every new generation. So, to address bandwidth and memory challenges, the emerging ICT sector is expected to adopt 3DIC integration technology for its high chip density and high bandwidth advantages. SOI (silicon-on-insulator) wafers are widely preferred for 3DIC fabrication as it reduces unwanted heat production and parasitic capacitance.

Various industry products such as MEMS and sensors, optoelectronics and imaging, RF SiP, memories, logic (3D SiP/SoC) and HB LED are expected to deploy 3DIC integration. Among these products MEMS and sensor, logic (3D SiP/SoC) and memories (3D Stacks) together accounted for approximately 67.6 percent of market revenue share in 2012. Continuous demand for devices with less expensive storage and higher capacity are the key factors for driving NAND and DRAM memory market. With the increasing demand for consumer electronic products, sales of image sensor and MEMS devices are estimated to grow in the forecast period. This in turn is expected to support adoption of 3D ICs in various devices. Geographically, Asia Pacific is expected to remain largest market for 3D IC technology due to the emerging ICT and consumer electronics sector in this region. Asia Pacific’s revenue share in 2012 was 40.7 percent.

Driven by emerging opportunities and high growth potential, various players from semiconductors and packaging are entering 3D IC integration space, making the competition intense. Among these, players such as Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), Xilinx Inc., Samsung Electronics Co. Ltd., have dominant position in the market, collectively accounting for more than 54.5% of the market in 2012, with TSMC being the leader. New entrants are expected to face stiff competition from existing players, and will have to focus on high investments on R&D and comprehensive ecosystem for IC integration and testing so as to sustain growth in the long run. Other vendors in the market are: 3M Company, Micron Technology Inc., (Elpida Memory Inc.), Ziptronix, Inc., MonolithIC 3D Inc., Tezzaron Semiconductor, STATS ChipPAC Ltd. and United Microelectronics Corporation (UMC) among others.

Nanoelectronics research center imec and AlixPartners, a global business advisory firm, announced today that the two companies are co-developing a cost modeling solution to assess the cost of advanced semiconductor technology options. The work is aimed at assisting the semiconductor industry in improving the operational intelligence around costs of future technology nodes.

This modeling will assess the cost of various patterning options for N10/N7 nodes, advanced packaging solutions and 3D NAND memory – all topics with big impacts on the price-tag of future consumer electronics. Imec and AlixPartners will be comparing the “should-be” cost of lithography-patterning from a system perspective and will assist in providing this information to industry suppliers and materials providers to better provision the development of extreme ultraviolet (EUV) lithography and/or 193inm multi-patterning lithography solutions. This model, designed to address advanced patterning costs, will also be crucial for fabless semiconductor companies (those that outsource their manufacturing) that are defining product strategy in close collaboration with foundries.

Economics today are challenging Moore’s law as the costs associated with node progression have been rising significantly. Below the 28nm node, the semiconductor industry is struggling to maintain its historical 30-percent cost savings per logic gate node over node. At the same time, consumer markets today are demanding cheaper smartphones and other devices, including for the Internet of Things (IoT).

Related news: CES 2014 Highlights

“More than ever, decisions on future technologies must be driven by economics, and this collaborative effort is designed to be a giant step toward providing granular visibility into the costs that drive the semiconductor ecosystem. With this visibility, industry leaders will have the decision support needed to make smart choices on breakthrough technologies, with their available resources”, said Nord Samuelson, managing director at AlixPartners and leader of the firm’s North American High Technology and Semiconductor Practice.

As part of this joint effort, imec and AlixPartners will also work with interested parties who have new ideas on how to reduce semiconductor design, development and manufacturing costs, thereby assisting with the building of corresponding cost models via imec’s existing Industrial Affiliation Program (IIAP).

An Steegen, senior vice president of Process Technologies at imec, said: “Over the last years, we have been pushed by our partners to find new ways to revive Moore’s law from a cost perspective and identify new technologies that can significantly reduce processing cost. We are excited about our collaboration with AlixPartners as it will help us to precisely quantify and compare the cost of different options considered –and in this way prioritize our R&D efforts- and assist in strategizing a product’s roadmap.”

Scott Jones, a director in AlixPartners’ High Technology and Semiconductor Practice, said, “AlixPartners’ business has been built on helping a wide variety of industries to overcome complex operational challenges, uncover new opportunities, minimize risk and maximize value. As the semiconductor industry continues to see rapidly-changing market dynamics, we’re pleased to work with an innovation catalyst such as imec to develop a model designed to help the industry successfully generate next-generation mass-market solutions and products.”

By Christian Gregor Dieseldorff and Dan Tracy, SEMI Industry Research & Statistics Group

The rock band Supertramp titled its fourth album “Crisis? What Crisis?”  The title of the album, released in 1975, reflected the economic situation during that time. Back in 1973, OPEC proclaimed an oil embargo causing oil prices to soar; the stock market crashed and idled from January 1973 to December 1974, with the Dow Jones losing over 45 percent in 699 days; and a global recession put an end to the general post-World War II economic boom. This recession lasted from 1973 to March 1977, although the effects on the U.S. were felt into Ronald Reagan’s first term.  At that time, the semiconductor industry was in its infancy.

Worldwide, the semiconductor industry growth rate back in 1973 was about 30 percent and slipped into 1975 with negative sales growth rates. Following a recovery in the late 1970s into the 1980s, the next negative growth for the semiconductor industry occurred in 1985 with a -17 percent decline in revenue. Another year of decline includes the -8 percent slide in 1998, surrounded by the Asian financial crisis in 1997 and the Russian financial crisis in 1998. The largest drop for the semiconductor industry, however, occurred in 2001 with the burst of the dot-com bubble, causing revenues to fall to -32 percent. More recently, the housing bubble crisis and the European sovereign debt crisis resulted in a revenue decline of -9 percent in 2009, certainly not as severe as in 2001 though the industry was on edge for a number of quarters as uncertainty reigned throughout the global economy

Comparing the 2001 crisis to the most recent crisis suggests a paradigm change for the semiconductor industry has transpired. Before 2009, capacity additions corresponded closely to fab equipment spending.  These days, much more money is spent on upgrading existing facilities, while new capacity additions are much lower.  In fact, the pace of new capacity additions has dropped to levels previously seen only during an economic crisis.

2013 Installed Capacity Growth Mimics Economic Crisis Behavior

When SEMI’s May fab database report was released, fab capacity was expected to increase 2.4 percent in 2013.  By August, this was revised down.  New data have caused a further revision down to 1.9 percent for 2013 (see Figure 1). The SEMI World Fab Forecast Report data also support lower expectations for capacity expansion in 2014 (5.4 percent predicted in May, down to 3.9 percent in August, and now to 3.3 percent in November). Most likely, device makers seek to avoid oversupply and a drop in selling prices for devices.

CHRIS Graphic 1--FINAL

Figure 1: Installed capacity for Front End facilities over time (without Discretes)

Looking at the trends in the last 18 years, capacity growth rate in 2013 is at levels seen during an economic crisis, but what crisis exists?

Semiconductor revenues for 2013 are expected to grow 4 to 6 percent, and 2014 expectations are also positive, mirroring other upward looking market indicators such as auto sales (at a six year high in September 2013), the Dow Jones (at a record high of 16,000 points in December 2013), and expansion of the U.S. GDP (up 4.1 percent in the 3rd quarter, as of mid-December 2013). So, why the low rate in capacity expansions?

The last time installed capacity growth rate was under 2 percent was during the 2009 economic crisis, and before that, in 2001.  Even when impacted by the 1997 Asian Financial Crisis and the 1998 Russian Financial Crisis, capacity growth rates did not fall below 4 percent.  So in examining history, capacity expansion in 2013 has behaved as if there were an economic crisis, despite no new crisis. In addition, SEMI (Figure 1) shows that addition of new capacity in 2014 will rank this year at the 4th lowest level over the past 18 years.

Another Paradigm: More Fab Equipment Spending for Existing Facilities

Examining historic trends for equipment spending, most fab equipment spending before the 2009 crisis was going towards adding new capacity.  After 2009, while fab equipment spending recovered, new capacity additions trended below pre-2009 growth rates (see Figure 2).

CHRIS Graphic 2--FINAL

Figure 2: Fab equipment spending (new and used) for Front End facilities vs change rate of installed capacity.

In the five years between 2003 and 2007, the growth rate of new capacity increased from 6% in 2003 to 20% growth in 2007 (almost doubling the fab capacity in 5 years), according to the SEMI World Fab Forecast Report. This was driven mainly by DRAM and NAND companies in Korea, Taiwan and China. After the 2009 economic crisis, however, growth of new capacity dropped from 7 percent in 2010 to about 4 percent in 2014, thus with the expected capacity addition of  only 17 percent in the five years from 2009 to 2014. Especially after 2009 we observed a number of company consolidations (Elpida, Powerchip, Rexchip), restructuring or change of direction (Promos, SMIC and a number of Japanese device makers), and even bankruptcy (Qimonda).

Increasing Spending for Upgrade Projects

Since the 2009 crisis, expenditures on upgrading existing equipment have grown sharply.  Expansion projects, such as new fabs still account for the majority of fab equipment spending, but in lower proportions than in the past (see Figure 3).

CHRIS Graphic 3--FINAL

Figure 3: Fab Equipment Spending for new and used equipment (Front End) for expansion projects and upgrade projects.

Costs for adding new equipment to a new facility are typically higher than upgrading some of the existing equipment. The number of companies building and equipping fabs continues to shrink through consolidation into larger companies as leading-edge technology upgrades become more expensive.  Deployment of some leading-edge technology has begun to slow as NAND and DRAM industry bit growth moderates.  For example, the cost per wafer to upgrade NAND to 3D generation may be twice as much as it was for 20nm class upgrades.

The New Paradigm

According to SEMI, the two industry segments predicted to add the most capacity, based on demand, are foundries and NAND in 2013 and 2014. Dedicated foundries grew at a steady 10 percent in 2013, and will add another 8 to 10 percent in 2014.  For the second largest segment, NAND, which lost about 4 percent of capacity in 2012, capacity rose 10 percent in 2013 and will add another 5 to 8 percent in 2014. Other segments, such as DRAM, Analog, and Logic, are not expected to add new capacity in 2013 and 2014. MPU may add some new capacity by 2014.  For more information, visit  www.semi.org/MarketInfo/FabDatabase and www.semi.org/en/Store/MarketInformation/fabdatabase/ctr_027238.

Top makers of mobile phones, Samsung and Apple, are major drivers for the industry. For example, after six years, Apple finally unlocked a crucial deal for iPhone sales in China with 760 million potential customers, twice the U.S. market. This will inspire greater capacity additions such as for foundries and NAND.

Even in 2014, when the top two segments, foundry and NAND, are adding new capacity in upper single digits, the overall fab capacity  growth rate globally is still among the five lowest in 18 year history meaning that other segments add little or no new capacity, or focus on upgrading process technology.

Crisis? What Crisis? The year 2013 was an unusual year. Compared to historical trends, globally new capacity growth appeared as in a year of economic crisis but there was none, and 2014 will be yet another year of minimal fab capacity expansion overall for the industry. Sectors that serve the leading edge for mobile devices will add the most capacity; other sectors reflect the lower growth observed across the broader semiconductor industry since the 2010 recovery.

The SEMI World Fab Forecast lists about 1,150 facilities.  Sixty-seven of these (with various probabilities) have started or will start volume production in 2013 or later. The report lists major investments (construction projects and equipping) in 206 facilities and lines in 2013, and 180 facilities and lines in 2014. Visit www.semi.org/MarketInfo/FabDatabase.

Micron Technology surged 130 percent in revenue during the third quarter as it finally closed its acquisition of bankrupt Elpida Memory of Japan, a vigorous ascent that also propelled the total market for dynamic random access memory (DRAM) to its best performance yet in 11 quarters, according to a new DRAM Dynamics brief from IHS Inc.

Micron ended the third quarter with sales of $2.63 billion, up a sizzling 131.3 percent from $1.14 billion in the earlier quarter, to give the Idaho-based maker 27.4 percent market share. Micron remains at No. 3 overall behind top-ranked Samsung, but Micron is now within striking distance of second-ranked SK Hynix.

Samsung still has a commanding lead with 36.8 percent market share of DRAM, but SK Hynix, with 27.8 percent share, is now just four-tenths of a percentage point ahead of Micron.

Micron’s market share had been hovering in the 10 to 15 percent range for the last several years, but the addition of Elpida’s revenue to its column has made a significant difference. The closing of the Elpida acquisition, more than a year in the making and a formidable rival of Micron in the past, will now more than double Micron’s DRAM manufacturing capability. This means Micron will now claim 25 to 30 percent market share from this point forward.

Micron’s market share in the third quarter received an additional bump because of the company’s high exposure to the PC DRAM space, which has seen prices appreciate considerably since November 2012. Nearly 35 percent of Micron’s revenue came from sales of PC DRAM, IHS estimates.

Overall the global DRAM market continued its blistering pace of expansion in the third quarter, with revenue up 10 percent sequentially to reach $9.59 billion. Not since the third quarter of 2010 has industry revenue climbed so high when the market’s takings then hit $10.68 billion. Industry revenues had hovered at the $6 billion to $7 billion range for seven quarters beginning in the third quarter of 2010 and then breached the $8 billion mark in the second quarter, before making another substantial push this time to end up in rarefied territory.

Growth for the latest period was driven by an increase in shipments and average selling prices (ASP). Shipments are up 5 percent, while ASPs have jumped nearly 7 percent to reach $1.00 per gigabyte.

The DRAM industry is currently on a tear, helped by industry consolidation—including the Micron acquisition of Elpida—that has now left just three major producers, resulting in greater stability and higher prices because of controlled production, benefiting the remaining players.

Samsung expands shipments after SK Hynix suffers a fire

SK Hynix suffered a setback after a fire broke out at its Wuxi, China, plant, notably impacting the company’s DRAM shipments in the third quarter. After growing nearly 40 percent in the second quarter, SK Hynix saw only a 4 percent uptick in revenue in the most recent period because of the fire. The impact of the disaster will be felt through the end of 2013, IHS predicts, but the company should be back to near normal by the end of the year.

Meanwhile, Samsung—already the undisputed leader of DRAM—took advantage of the SK Hynix calamity to grow its own shipments by nearly 15 percent on the quarter, along with a 7 percent hike in ASP. Such results could put Samsung on track to reap record earnings in the fourth quarter—Samsung’s peak quarterly revenue was $4.35 billion in the third quarter of 2010.

For the fourth quarter, total DRAM shipments and prices are forecast to keep climbing. While signs suggest that prices have now reached their current peak with the spot market starting to soften, long-term prospects continue to look positive. And companies that outgrow the market average, such as Micron and Samsung, could well see revenues continue to go up.

Also see: Micron ships first samples of Hybrid Memory Cube

This is a transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts. Top plane contacts are gold (Au), palladium (Pd), and molybdenum (Mo). Credit: Suman Datta/Penn State

This is a transmission electron microscope cross-section of the vertical TFET. The interface of the source and channel is the point where electron tunneling occurs. ILD is the interlayer dielectric separating the contacts. Top plane contacts are gold (Au), palladium (Pd), and molybdenum (Mo).
Credit: Suman Datta/Penn State

A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers. Called a near broken-gap tunnel field effect transistor (TFET), the new device uses the quantum mechanical tunneling of electrons through an ultrathin energy barrier to provide high current at low voltage.

Penn State, the National Institute of Standards and Technology and IQE, a specialty wafer manufacturer, jointly presented their findings at the International Electron Devices Meeting in Washington, D.C. The IEDM meeting includes representatives from all of the major chip companies and is the recognized forum for reporting breakthroughs in semiconductor and electronic technologies.

Read more: Slideshow: IEDM 2013 Highlights

Tunnel field effect transistors are considered to be a potential replacement for current CMOS transistors, as device makers search for a way to continue shrinking the size of transistors and packing more transistors into a given area. The main challenge facing current chip technology is that as size decreases, the power required to operate transistors does not decrease in step. The results can be seen in batteries that drain faster and increasing heat dissipation that can damage delicate electronic circuits. Various new types of transistor architecture using materials other than the standard silicon are being studied to overcome the power consumption challenge.

“This transistor has previously been developed in our lab to replace MOSFET transistors for logic applications and to address power issues,” said lead author and Penn State graduate student Bijesh Rajamohanan. “In this work we went a step beyond and showed the capability of operating at high frequency, which is handy for applications where power concerns are critical, such as processing and transmitting information from devices implanted inside the human body.”

For implanted devices, generating too much power and heat can damage the tissue that is being monitored, while draining the battery requires frequent replacement surgery. The researchers, led by Suman Datta, professor of electrical engineering, tuned the material composition of the indium gallium arsenide/gallium arsenide antimony so that the energy barrier was close to zero — or near broken gap, which allowed electrons to tunnel through the barrier when desired. To improve amplification, the researchers moved all the contacts to the same plane at the top surface of the vertical transistor.

This is a scanning electron microscope top view of the TFET.

This is a scanning electron microscope top view of the TFET.

This device was developed as part of a larger program sponsored by the National Science Foundation through the Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Technologies (NERC-ASSIST). The broader goal of the ASSIST program is to develop battery-free, body-powered wearable health monitoring systems with Penn State, North Carolina State University, University of Virginia, and Florida International University as participating institutions.

Worldwide sales of semiconductors reached $27.06 billion for the month of October 2013, a 7.2 percent increase from the same month last year when sales were $25.24 billion, and 0.8 percent higher than last month’s total, according to The Semiconductor Industry Association (SIA). October marked the eighth consecutive month of increasing sales and the industry’s first-ever month above $27 billion in sales. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average. Additionally, a new WSTS industry forecast projects that the industry will reach its highest-ever annual sales total in 2013, and continued growth is projected for 2014 and 2015.

“With eight straight months of growth and a new monthly sales record in October, the global semiconductor industry is on track to exceed $300 billion in annual sales for the first time ever in 2013,” said Brian Toohey, president and CEO, Semiconductor Industry Association. “The industry is projected to maintain solid growth for the remainder of 2013 and into 2014, led largely by the Americas, which has remained well ahead of last year’s pace. Congress and the Administration can help maintain and strengthen growth by resolving fiscal uncertainty and investing in scientific research.”

Regionally, sequential monthly sales increased in the Americas (3.3 percent), Europe (1.7 percent), and Asia Pacific (0.1 percent), but decreased in Japan (-1.4 percent). Compared to October 2012, sales increased in the Americas (20.1 percent), Europe (8.6 percent), and Asia Pacific (7.4 percent), but fell in Japan (-12.1 percent), in part due to the devaluation of the Japanese yen.

SIA also today endorsed the WSTS Autumn 2013 global semiconductor sales forecast. WSTS projects the industry’s worldwide sales will reach $304.3 billion in 2013, which would be the industry’s highest-ever annual sales total and a 4.4 percent increase from the 2012 total. WSTS predicts year-over-year increases for 2013 in the Americas (10.3 percent), Asia Pacific (7.2 percent), and Europe (4.3 percent), but a sharp decline in Japan (-14.5 percent).

Beyond 2013, the industry is expected to grow steadily across all regions, according to the WSTS forecast. WSTS predicts 4.1 percent growth globally for 2014 ($316.6 billion in total sales) and 3.4 percent growth for 2015 ($327.3 billion). WSTS expects the wireless and automotive end markets to grow faster than the total market. WSTS tabulates its semi-annual industry forecast by convening an extensive group of global semiconductor companies that provide accurate and timely indicators of semiconductor trends.

SEMI projects that worldwide sales of new semiconductor manufacturing equipment will contract 13.3 percent to $32.0 billion in 2013, according to the SEMI Year-end Forecast, released here today at the annual SEMICON Japan exposition.  In 2014, all regions except Rest of World are expected to have strong positive growth, resulting in a global increase of 23.2 percent in sales. 2015 sales are expected to continue to grow — increasing 2.4 percent with Japan, Europe, Korea, China, and Rest of World regions registering positive growth.

The SEMI Year-end Forecast predicts that wafer processing equipment, the largest product segment by dollar value, is anticipated to decrease 10.7 percent in 2013 to total $25.1 billion, on par with 2004 spending levels. The forecast predicts that the market for assembly and packaging equipment will decline by 22.1 percent to $2.4 billion in 2013. The market for semiconductor test equipment is forecasted to decline by 20.7 percent, reaching $2.8 billion this year. The “Other Front End” category (fab facilities, mask/reticle, and wafer manufacturing equipment) is expected in decrease 25.2 percent in 2013.

Korea, Taiwan, and North America remain the largest spending regions, though of the three only Taiwan is expected to show an increase in spending for 2013. According to SEMI, in 2013, Taiwan will reach equipment sales of $10.2 billion, with North American sales totaling $5.7 billion and Korea sales registering $5.5 billion. Regions experiencing the steepest declines in spending in 2013 include: Korea, North America, and Europe. The equipment market in Rest of World, primarily Southeast Asia, is expected to increase 3.2 percent.

The SEMI Semiconductor Manufacturing Equipment Sales Forecast data (below) is given in terms of market size in billions of U.S. dollars and percentage growth over the prior year:

IR&S-Graphic-Dec-2013-SGU

In September 2013, EPSON announced its next generation inkjet technology, PrecisionCore, introducing for the first time MEMS inkjet heads manufactured with thin film PZT technology. This announcement has been highly publicized: first, thin film PZT MEMS applications are now on the market, proving the reliability and maturity of this technology. Second, more inkjet head players will soon follow.

“Thin film piezoelectric materials are gaining increasingly more importance within the MEMS industry. Although semiconductor manufacturing companies are historically reluctant to introduce such exotic materials into their production lines, every major MEMS foundry nowadays is working on the implementation and qualification of piezoelectric thin film in their MEMS manufacturing processes,” explains Claire Troadec, Market & Technology Analyst, Semiconductor Manufacturing, at Yole Développement.

Lead zirconium titanate or PZT (Pb[ZrxTi1-x]O3 with 0 ≤ x ≤ 1)) is a very interesting ferroelectric material. Depending on its composition, it has the advantage of combining 3 different material properties: high dielectric constant, pyroelectric effect and piezoelectric effect. Its high dielectric constant property is still extensively being used with the integration of thin film PZT in Integrated Passives Devices (IPDs) and to a lesser extent in Ferroelectric memories (FeRAM). These have been the 2 leading applications for thin film PZT for many years. NXP Semiconductors and STMicroelectronics dominate this IPD market.

The pyroelectric effect of PZT is today being used by Pyreos for thin film PZT based uncooled Infrared detectors, although this thin film PZT based technology remains quite marginal in this field. The most promising effect of PZT for future applications would certainly be its piezoelectric effect. Companies like Wavelens and PoLight are extensively working on the introduction of their autofocus based products to the market using thin film PZT technology. This profusion of new MEMS applications using thin film PZT technology is just beginning.

Click to view full size.

Click to view full size.

The roadmap for high volume production is still to be built

The main difficulty for thin film PZT technology is the integration of this exotic material into a robust and reproducible process flow. There are major technological challenges associated with thin film PZT integration into a product : deposition, etching, process monitoring, test, reliability. These are complex topics and although many R&D efforts have been made so far by labs, equipment and material suppliers, and device manufacturers, some work remains to be done to achieve robust products for high volume production.

Sol-Gel gives better intrinsic film properties as deposited thin film PZT, with good uniformity and higher breakdown voltages. But when considering high volume production, throughput becomes a major consideration and this is where Sol-Gel shows some limitations. Many equipment manufacturers within the semiconductor industry are thus working on a more classical solution: Sputtering.

ULVAC was among the first companies to develop thin film PZT deposition based on a PVD process and today, they have the more reliable PVD technology. Big semiconductor players like Applied Materials started preparing to compete in this market 18 month ago. They are rapidly ramping up their activities on thin film PZT. Meanwhile players like Oerlikon and SolMateS are continuing to improve their deposition technology, be it PVD or Pulsed Laser Deposition technology. They both show very promising results. SolMateS is a very interesting case: with their recent PLD technology and smaller company size, they end up competing with large PVD equipment manufacturers in this thin film PZT manufacturing area.

The thin film PZT manufacturing battle is only beginning, and the next five years are going to be very interesting.

In their new report, Yole Développement evaluates each thin film PZT deposition technology and compare them. The analysts’ team describes all key thin film PZT based applications. Yole Développement presents a roadmap for each key player with their expected year for market entry. Finally, they present their thin film PZT production forecasts for the 2013-2018 period.