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Samsung, IBM and GlobalFoundries look to the future: A report from the Common Platform Technology Forum

March 15, 2012

The 2012 Common Platform Technology Forum took place March 14 at the Santa Clara Convention Center, with registration topping 1200 attendees by noon. The Common Platform is a Samsung /IBM/GlobalFoundries foundry services entity created to provide a common design space with an assured production capability.

The meeting kicked off with Ana Hunter, Samsung’s foundry business VP. The Common Platform had its roots in 65nm, and is presently working with 20nm gate-last and 14nm FinFET. Pre-revenue investment in the 20nm to 14nm range approaches $10B, with $1-2B in process development, $250M in IP & design libraries, $100M in chip design and $7B in fab construction.

Gary Patton, VP of SRDC at IBM, gave the first keynote with prognostication on the kind of technology development that is in the pipeline beyond traditional CMOS scaling. We are presently in the 3D decade, both in terms of 3D transistor design and 3D packaging integration. Next will be the decade of nanotechnology materials, in which the critical device dimensions do not depend on photolithography. Long-term R&D for this coming decade is already underway, as an extremely long lead time is required for commercialization to manufacturing. In 2011 IBM broke its own US patent record with 6,000 filings, a position it has held for 19 straight years. He hopes EUV will be ready for 10nm, “but we have a dual path.” At 10nm, EUV will provide a bump in k1 factor from 0.15 to 0.55, better that we enjoyed at 90nm. The scanner still needs a 10x improvement in light power, but additional work is needed in photoresist materials and mask fabrication and inspection technology. A new EUV Center of Excellence at Albany CNSE is expected to be operational later this year. Below 80nm, resist development is focusing on directed self-assembly (DSA) of block copolymers. Presently, the 22/20nm work is being done in East Fishkill; 14/10nm at Albany; and 7nm & beyond at Yorktown Research. Fully depleted device structures are the recurring theme going forward. CNT devices provide advantages over FinFETs in terms an order of magnitude reduction in power consumption at the same operating frequency, or an order of magnitude increase in frequency at the same power. With these innovations in design constructs and materials, Gary noted that the transistors are still much more amenable to scaling than interconnects, in which RC performance and structural reliability in both the conductors and the insulators doth protest mightily with scaling. Photonic interconnects on chip continues to be an area of intense development, moving now from fundamental unit performance demonstrations to system integration. The packaging concepts that he reviewed, while challenging, we consistent with advanced packaging concepts that have been progressing over the past five years. TSV is currently in volume manufacturing for power system chips. For stacking large DRAM chips on top of high performance MPU, he expects TSV to be in production within 2 years.

Subi Kengeri, head of the advanced architecture development group, filled in for GlobalFoundries CTO Gregg Bartlett to discuss the convergence of consumer mobility applications enabled by semiconductor technology advances. Foundries are a 300mm leading edge business growing at 15% CAGR. Since 90nm, the time between design start and tape out has been extending as design complexity increases. Design cost has been increasing at a 25% CAGR, whereas fab cost has been increasing at 18%, albeit a much larger number. Smart mobile computing is starting to move into the design driver seat that has up to now been occupied by MPU and GPU functions. Gate last HkMG at 20nm has been selected to meet these needs for 3rd generation HkMG FinFET mobile devices. At 14nm FinFET, you need 100 WPH (wafers per hour) throughput with EUV to break even with 193i with multiple patterning; 180 WPH provides a compelling advantage for EUV.

Jong Shik Yoon, Senior VP Semiconductor R&D at Samsung, spoke on opportunities and challenges in 3D device integration. SOI FinFETs were pioneered by IBM, while Samsung & Intel led the development of bulk FinFETs; the Common Platform supports bulk FinFET. SOI FinFET is used by IBM for server and specialty mobile applications. CNT FET work has been going on at Samsung as well.

Simon Segars, EVP & GM of the ARM Physical IP Division, wrapped up the morning with the fabless design and manufacturing implementation perspective. Industry drivers today are mobile computing, servers and the “internet of things.” Lower cost entry level smart phones represent another billion unit market globally. Mobile networks require about 1 server for every 600 phones, which puts the server demand into perspective, particularly as servers alone become a more significant percentage of world power consumption (still single digits for now). Global internet mobile traffic for 2015 will be about 966 exabytes (that’s a whole lot of gigabytes…). Simon is confident that the collaboration infrastructure that has gotten them to 20nm is extendable to 14nm.

A panel discussion featuring R&D leaders from the 3 Common Platform partners, ARM and CNSE on the R&D pipeline for future semiconductor technology innovation followed lunch. Michael Liehr, VP Research at CNSE pointed out several ways in which the fab there operates like an industrial site, with professors leading engineering teams that function as much like an IDM process development group as a graduate student research group. GlobalFoundries in Malta, NY is currently running 32nm production and 20nm full flow qualification. Work on DSA for photolithography started at IBM in 2000 and is still not ready for prime time. Similarly, copper interconnect development work started at IBM in 1984 and didn’t go into production until 1997, and even then came as a surprise to many outsiders. This is indeed a very long development pipeline.

Rama Divakaruni, IBM Chief Technologist, and Lars Liebmann, IBM Distinguished Engineer, opened a technology session on 14nm technology development with a review of the grand challenges. EUV shows up as a fuzzy transition some time in 2H14 shortly before the 14nm production ramp begins. Development started about 30 years ago in the national labs, but they hope to be able to support integrated process flow development at Albany by YE13. This seems to add gravitas to Gary Patton’s expressed hope that it will actually be ready for 10nm. Triple patterning with 198i is proposed for M1 to maintain design protocols on a path that will provide for a relatively easy return to the EUV goal of single exposure for M1. When pressed for a volume production implementation of EUV, Lars admitted ‘not before 2015’ but could be no more specific.

Yongjoo Jeon, Samsung’s Director of Foundry Technical Marketing gave an overview of their technology offerings at 20nm. Samsung has two versions of the 20nm platform: 20LPE available June 2012 and 20LPM, scheduled for full production May 2013. The 20LPM will use double patterning for isolation, via 0 and minimum pitch M1; both are HkMG gate last. Their 20nm devices are currently 10% below target for DC performance and 20% below target for AC performance, but the root causes are known and the program is considered on schedule to meet its release dates.

Mukesh Khare, Director of Semiconductor Technology at IBM Research, described the innovation pipeline beyond 14nm. Technology elements will include strain, HkMG and FinFET variations to leverage recent innovations, but nanowires will lead the way to a brave new world. We’ve transitioned to a domain in which scaling leads to degradation rather than improvement; new materials and process innovation are required in its place. A silicon nanowire is thought to represent the ultimate extension of the fin structure. The game is already afoot for applying strain to an individual nanowire. Alternative channel material candidates include III-Vs for nFET and Ge and high % Si-Ge for pFET, though challenges remain for silicon integration and contact resistance. Carbon electronics will provide extraordinary carrier mobility and extremely long carrier mean free paths. IBM’s 40nm epitaxial graphene transistor on SiC still holds the RF performance record at 280GHz. Polymer DSA is IBM’s pipeline alternative to EUV. The technology has already been used in the dielectrics used in air gap interconnects. The photoresist analog holds the promise of providing ‘pitch in a bottle.’ The double entendre will be better appreciated on days when it does not work. In combination with 193i, DSA has been used to produce 25nm line/space pairs with excellent line edge roughness.

Michael A. Fury is a Director & Senior Technology Analyst at Techcet Group.

Semiconductor manufacturing equipment sales rose 9% in 2011

March 13, 2012

March 13, 2012 — Worldwide sales of semiconductor manufacturing equipment totaled $43.53 billion in 2011, representing a year-over-year increase of 9%, shows the Worldwide Semiconductor Equipment Market Statistics (SEMS) Report from SEMI.

Categories cover wafer processing and other front-end equipment, assembly and packaging, and test. Other front-end includes mask/reticle manufacturing, wafer manufacturing, and fab facilities equipment.

The global wafer processing equipment market segment increased 15%, the assembly and packaging segment decreased 14%, and total test equipment sales decreased 9%. Other front-end equipment sales grew by 5%.

Worldwide billings totaled $43.53 billion in 2011, compared to $39.93 billion in sales posted in 2010. Also read: Semiconductor fab equipment spending to hit a record in 2013

Spending rates varied for all the regions tracked in the WWSEMS report, with increases reported for Europe, North America, and Japan. North America surpassed Taiwan as the region with the highest amount of spending with $9.26 billion in equipment sales. The Korea market claimed the second place for the second year in a row with $8.66 billion in sales; Taiwan fell to the third position with a regional decrease of 24%.

Table. 2010-2011 Semiconductor Capital Equipment Market by World Region. (Dollars in US billions; Percentage Year-over-Year). Source: SEMI/SEAJ March 2012.

Region	2011	2010	% Change
North America	9.26	5.75	61%
South Korea	8.66	8.63	0%
Taiwan	8.52	11.25	-24%
Japan	5.81	4.44	31%
Europe	4.22	2.34	80%
China	3.65	3.68	-1%
Rest of World (Singapore, Malaysia, Philippines, other areas of Southeast Asia and smaller global markets)	3.41	3.84	-11%
Total	43.53	39.93	9%

Note: Figures may not add due to rounding.

Compiled from data submitted by members of SEMI and the Semiconductor Equipment Association of Japan (SEAJ), the Worldwide SEMS Report is a summary of the monthly billings and bookings figures for the global semiconductor equipment industry. The report includes data for seven major semiconductor producing regions and 24 product categories. The Equipment Market Data Subscription (EMDS) from SEMI provides comprehensive market data for the global semiconductor equipment market. A subscription includes three reports: the monthly SEMI Book-to-Bill Report, which offers an early perspective of the trends in the equipment market; the monthly Worldwide Semiconductor Equipment Market Statistics (SEMS), a detailed report of semiconductor equipment bookings and billings for seven regions and over 22 market segments; and the SEMI Semiconductor Equipment Consensus Forecast, which provides an outlook for the semiconductor equipment market. For more information, visit www.semi.org.

LED makers could diversify with GaN power electronics production

March 7, 2012

March 7, 2012 — The gallium nitride (GaN) power semiconductor market is currently small, with only 2 major device suppliers. However, new entrants are ramping to production, silicon-based electronics suppliers developing GaN technologies, and light-emitting diode (LED) makers diversifying capacity to make power electronics, according to Yole Developpement.

Also read: GaN LED market growth starts in 2012

The GaN power device industry generated less than $2.5M (estimated) revenues in 2011, with only IRF & EPC Corp. selling products on the open market. R&D contracts, qualification tests, and sampling buoyed the industry with extra revenue. GaN power device revenues are likely to stay below $10M for devices in 2012, with the rest being made through R&D sales.

While IRF and EPC will remain on top in the near term, several new entrants in the GaN power device sector will transition from qualification to production ramp-up in 2013, possibly taking revenues over $50 million. In 2015, as these new entrants achieve higher volumes and qualified 600V+ GaN devices hit the market, GaN will reach non-consumer applications and grow rapidly. In 2015, 12-15 players will together consume more than 100,000 (6" equivalent) epiwafers.

If GaN is qualified in the electric/hybrid electric vehicle (EV/HEV) sector, GaN device business could top the billion dollar line and the GaN-on-Si substrate market could exceed $300 million in revenues by 2019, explains Dr Philippe Roussel, Business Unit Manager, Power Electronics at Yole Développement. However, it is still unclear how car makers will choose between silicon carbide (SiC), GaN, or established silicon technology.

R&D activities are still fragmented between several substrate options for power electronics: GaN-on-sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-aluminum nitride (AlN) and GaN-on-Si. GaN-on-Si should take a dominant position, thanks to the availability of6" wafers with >7μm-thick GaN epi and 8" wafers under qualification.

Yole Développement identifies 5 companies positioned on the epiwafer business side and more than 6 GaN device pure-players, and another 15 Si-based power firms developing GaN technology.

LED makers are now looking at GaN power electronics, considering ways to convert existing underutilized LED fab capactity to make power semiconductors or epiwafers. That represents an “epsilon” today, but Yole Développement assumes it may create some waves in GaN industry growth. The two technologies are manufactured with similar processes and are subject to similar market dynamics. GaN epi technology came from the LED industry, while current GaN-on-Si epiwafer work is feeding both industries. Most epiwafer vendors are targeting LED and power segments with dedicated products and offers. Yole expects LED and power electronics manufacturing to become so intertwined in the future that the analysts are grouping them under "GaN device industry."

Figure. GaN device market size and list of applications sectors. SOURCE: Yole Power GaN report, March 2012.

Power device makers usually buy polished silicon wafers, conduct the epitaxy (or buy Si epi-wafers) unless using FZ thin wafers, then process the devices. This model is roughly the same for SiC technology. New GaN producers may not integrate metal organic chemical vapor deposition (MOCVD) GaN epitaxy, instead buying GaN epiwafers and processing them in existing CMOS front-end lines. Alternatively, new entrants could fully integrate the GaN process, from the bare silicon, GaN epi, and front-end fab.

"Power GaN — 2012 edition," a report from Yole Développement, provides a complete analysis of the GaN device and substrate industry in the power electronics field: market forecasts, company involvements, etc.

Companies cited in the report: _{Aixtron, AZZURRO, BeMiTec, Bridgelux, CamGaN Ltd, Diotec, Dow Corning, Dowa Electronics Materials, Enphase , EPC Corp., EpiGaN, Episil, Fairchild, FBH, Freescale, Fuji Electric, Furukawa, GaN Systems, GLO AB, Global foundries, HelioDEL, Hitachi, III-V Lab, IMEC, Infineon, International Rectifier, Intersil, IQE, Kyma, Lattice Semiconductor, LG Electronics, LG Siltron, Lumileds, MicroGaN, Microsemi, Mitsubishi Electric, Nitek Inc., Nitronex, NTT, NXP, OnSemi, Osram, Oxford Instruments, Panasonic, Plessey Semiconductors, Powdec, Power Integrations, Renesas, Rose Street Lab, Samsung, Sanken Electric, Shimei Semiconductor, Shindengen, Siltronic, Soitec, STMicro, Sumitomo SEI, Texas Instruments, Toshiba, Transluscent, Transphorm, TSMC, Tyndall National Institute, Veeco, Velox, Vishay}

Author:
Philippe Roussel holds a PhD in Integrated Electronics Systems from the National Institute of Applied Sciences (INSA) in LYON. He joined Yole Développement in 1998 and is leading the Compound Semiconductors, LED,Power Electronics and Photovoltaic department.

Yole Développement is a group of companies providing market research, technology analysis, strategy consulting, media in addition to finance services. Access reports at www.yole.fr.

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NCSU researchers create functional oxide films

March 7, 2012

Researchers from North Carolina State University have developed the first functional oxide thin films that can be used efficiently in electronics, opening the door to an array of new high-power devices and smart sensors. This is the first time that researchers have been able to produce positively charged (p-type) conduction and negatively charged (n-type) conduction in a single oxide material, launching a new era in oxide electronics.

To make functional electronic devices, you need materials with a “p-n junction,” where the positively charged and negatively charged materials meet. Solid state silicon electronics achieved this decades ago, but are limited by the amount of power and temperature they can handle. Oxide materials are an attractive alternative to silicon because they can handle more power.

However, attempts to pair different p-type and n-type oxide materials previously ran into problems at the interface of the two materials – the p-n junction was always inefficient.

“We avoided this problem by using the same material for p- and n-type conduction,” says Dr. Jay Narayan, the John C. Fan Distinguished Chair Professor of Materials Science and Engineering at NC State and co-author of a paper describing the research. “This is a new era in oxide electronics.”

Specifically, Narayan’s team used lasers to create positively charged nickel oxide (NiO) thin films, then converted the top layer of those films to n-type. Because they could control the thickness of the n-layer, the researchers were able to control the depth and characteristics of the p-n junction. “This spatial and temporal selectivity provides unprecedented control to ‘write’ p-n junctions by laser beams and create ultra high-density device features for oxide electronics,” Narayan says.

By enabling the development of oxide electronics, the research allows for the creation of a host of new technologies in a wide array of fields. For example, because oxides can handle higher voltages than silicon-based electronics, the material could be used to create higher voltage switches for the power grid, which would allow more power to be transmitted on the existing infrastructure. Similarly, this would allow the development of sensors for use in higher-temperature environments, because oxides are more stable at high temperatures.

Oxide electronics could also be used to create new sensors for monitoring gases, since oxide materials can interact with oxygen. These sensors could have a variety of applications, including testing for air toxicity in security situations.

“These materials are also transparent,” Narayan says, “so this makes transparent electronics possible.”

The paper, “Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation,” is published online in the Journal of Applied Physics. The paper was co-authored by Pranav Gupta, a Ph.D. student at NC State; Narayan; and Drs. Titas Dutta and Siddhartha Mal, both former Ph.D. students at NC State now working at Intel. The research was funded by the National Science Foundation.

Semiconductor fab equipment spending to hit a record in 2013

March 6, 2012

March 6, 2012 — Semiconductor fab equipment spending will remain flat (0% increase) in 2012, shows SEMI’s World Fab Forecast report. But look for a record spend from semiconductor makers in 2013, jumping from $38.85 billion spent in 2012 to $45 billion in 2013.

Eight companies, including Samsung and Intel, will keep their fab equipment spending level above $2 billion in 2012. Key spenders increased their 2012 capex budgets, pushing SEMI’s year forecast from negative to flat. Samsung plans to spend at least $41.4 billion overall, with a hefty amount going to capex; Hynix increased spending in 2012 by 23% ($3.75 billion planned); UMC increased spending from to $2.0 billion; Intel increased spending to a historic high of about $12.5 billion.

If macroeconomic factors improve and other companies adjust their capex plans as well, then equipment spending for 2012 could cross into positive territory.

Table. Fab equipment spending (new and used). Figures in US$ Million. Source: SEMI World Fab Forecast February 28, 2012 edition.
	2008	2009	2010	2011	2012	2013
Semis, discretes, and LED	$25,960	$14,446	$33,568	$38,965	$38,850	$45,498
Change %	-32%	-44%	132%	23%	0%	17%
300mm only	$22,473	$12,031	$26,058	$29,986	$34,270	$40,580
Change %	-28%	-46%	117%	15%	14%	18%

Spending will rise in 2013, especially from Foundry, System LSI, MPU and NAND sectors. The trend is toward fab upgrades to manufacturing leading-edge semiconductors, while a few are also ramping up fab capacity. Coming out of the downturn from 2010 on, yearly capacity growth is 5-10%, remaining low for the foreseeable future. However, SEMI’s fab data shows rapid increases in fab equipment spending for some segments, leading also to an increase in installed capacity. SEMI expects 192 semiconductor manufacturing facilities will invest in equipment in 2012 (latest World Fab Forecast, February 28, 2012).

While installed capacity for DRAM is expected to level out, Flash capacity is growing rapidly between 2010 and 2013. The dedicated foundry sector will also undergo growth in installed capacity with the key contributors like TSMC, Globalfoundries and UMC.

2011 was a strong year for fab construction, with a 24% increase over a decent 2010 to $6.4 billion. This area will fall off in 2012, with a decline of about 28% to $4.5 billion. Data of the World Fab Forecast show an even further decline in 2013.

Lower construction spending compared to recent years, especially on new fabs, raises some concern about available capacity beyond 2013. Overall, the industry has tried to control installed capacity since coming out of the 2009 downturn. Now due to increasing demand, some segments, such as Flash, Foundry, and System LSI, are experiencing a boost in installed capacity.

The SEMI World Fab Forecast uses a bottom-up approach methodology, providing high-level summaries and graphs; and in-depth analyses of capital expenditures, capacities, technology and products by fab. Additionally, the database provides forecasts for the next 18 months by quarter. SEMI’s Worldwide Semiconductor Equipment Market Subscription (WWSEMS) data tracks only new equipment for fabs and test and assembly and packaging houses. The SEMI World Fab Forecast and its related Fab Database reports track any equipment needed to ramp fabs, upgrade technology nodes, and expand or change wafer size, including new equipment, used equipment, or in-house equipment. The recently released SEMI Fab database report enables data analysis by technology node, product type, region, company and fab by fab. Access the report at www.semi.org.

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Semiconductor demand declines 8.8% to start 2012, but expect positive drivers

March 5, 2012

March 5, 2012 — The Semiconductor Industry Association (SIA) reports worldwide semiconductor sales of $23.1 billion in January 2012, a 2.7% decrease from the month prior, in line with seasonal patterns. The figure was an 8.8% decrease year-over-year, but SIA expects positive demand as 2012 progresses.

All monthly sales numbers represent a 3-month moving average.

Table 1. Month-to-Month Semiconductor Sales (USD Billions)
Market	Last Month	Current Month	% Change
Americas	4.36	4.31	-1.1%
Europe	2.78	2.77	-0.5%
Japan	3.59	3.44	-4.2%
Asia Pacific	13.10	12.66	-3.4%
Total	23.83	23.18	-2.7%

Table 2. Year-to-Year Semiconductor Sales (USD Billions).
Market	Last Year	Current Month	% Change
Americas	4.69	4.31	-8.0%
Europe	3.30	2.77	-16.2%
Japan	3.80	3.44	-9.4%
Asia Pacific	13.63	12.66	-7.1%
Total	25.41	23.18	-8.8%

Table 3. Three-Month Moving Average Semiconductor Sales (USD Billions).
Market	Aug/Sep/Oct	Nov/Dec/Jan	% Change
Americas	4.67	4.31	-7.6%
Europe	3.08	2.77	-10.3%
Japan	3.88	3.44	-11.4%
Asia Pacific	14.17	12.66	-10.7%
Total	25.81	23.18	-10.2%

"A weakened global economy amidst inflation concerns and the European debt crisis continued to affect sales at the start of the year, but there are strong signs pointing to recovery and growth as 2012 progresses," said Brian Toohey, president, Semiconductor Industry Association. Semiconductor sales are expected to improve due to positive demand drivers, an improved U.S. economic outlook, and the resolution of flood-related disruptions in Thailand.

Analysts at Barclays Capital continue to look for 1Q12 to mark the inflection: Average guidance from semi makers is -3.5% at midpoint, supported by 5-8% average Q/Q CAGR for revenues in 2Q-4Q12 (6-10% ex-Memory). Barclays continues to model semi revenues as flat to 4% growth in 2012. Barclays analysts are "hard pressed to model faster growth for semis," with such gradual macro economic recovery.

Also see: Record semiconductor sales in 2011, 2012 outlook

Figure. Worldwide semiconductor revenues. SOURCE: WSTS.

"While data across all sub-segments came in worse versus December on a Y/Y basis; M/M revenue trends were in line with normal seasonality," noted Barclays. Trends appear worse on a Y/Y basis — there were deteriorating Y/Y trends in the month of January with the rate of decline faster versus December.

Despite recent WSTS membership changes, SIA will continue to publish WSTS data according to the established schedule, relying on accurate and timely data, the association noted. The Semiconductor Industry Association, SIA, a representative of the US semiconductor industry, unites over 60 companies that account for 80% of domestic semiconductor production. Learn more at www.sia-online.org.

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Gyroscope MEMS depose accelerometers in 2011 revenues

March 1, 2012

March 1, 2012 — Gyroscopes generated more revenues in 2011 than any other consumer/mobile micro electro mechanical system (MEMS), thanks to enthusiastic adoption of Apple Inc. iPhone and iPad devices late in the year. This was the first time gyroscopes topped accelerometers in consumer/mobile MEMS revenues, reports IHS.

Gyroscopes netted $655.4 million in 2011, up 66% from $394.5 million in 2010. The devices will bring in $1.1 billion by 2015, maintaining a lead over accelerometers ($705 million by 2015).

Figure. Worldwide gyroscope MEMS revenue forecast in consumer/mobile MEMS sector. SOURCE: IHS iSuppli Research, March 2012.

Of all consumer/mobile motion sensors in 2011, 41% were gyroscopes, by revenue, up from 24% in 2010. The total mobile motion sensor market hit $1.6 billion, up from $1.1 billion the prior year.

3-axis gyroscopes, used mostly in tandem with 3-axis accelerometers, are enabling more accurate motion sensing. Gyroscopes improve the motion-based interface, and can provide optical image stabilization and navigation-related functions. "Of the $655 million total revenue generated by the gyroscope space, the 3-axis segment accounted for $462 million, 71%," in 2011, said Jérémie Bouchaud, director and senior principal analyst for MEMS & sensors at IHS. Apple, with its smartphone (iPhone) and tablet (iPad) products, was the main consumer, buying 62% of 3-axis gyroscopes.

STMicroelectronics was the leading producer of both gyroscopes and accelerometers. Apple accounts for half of ST’s MEMS business, and the company is the sole source for gyroscopes and accelerometers for the iPhone and iPad.

Combo packages of 3-axis accelerometers and gyroscopes — 6-axis inertial measurement units (IMU) — will dominate in the sales of 3-axis gyroscopes by 2014. "Surprisingly compact" 6-axis compass modules (compass + accelerometer) are coming to market now, as are 9-axis IMUs with 3-axis electronic compasses added to 6-axis IMUs. Bosch Sensortec and InvenSense have introduced a 6-axis compass module and a 9-axis IMU, respectively.

In general, motion sensors like gyroscopes, accelerometers and electronic compasses will continue to rule consumer and mobile MEMS, the largest segment of an industry that includes other MEMS sectors such as automotive, medical, industrial, and aerospace and defense. Aside from smartphones and tablets, expect to find consumer-app motion sensors in TV remote controls and ultrabook laptops. By 2015, both TV remote control and ultrabook applications will add another $155 million in revenue derived from the use of accelerometers, gyroscopes and electronic compasses, up from $9 million in 2011.

Intel is recommending accelerometers, gyroscopes, electronic compasses and even pressure sensors for its ultrabooks, although some combinations will only be seen in convertible ultrabooks — those with a screen that can be flipped back to form a tablet.

MEMS microphones, also appearing in Apple’s mobile electronics, saw rapid growth in 2011. Apple uses two analog MEMS microphones in the iPhone 4 and 4S (MEMS mics provide voice suppression with Siri), along with one MEMS microphone in the headset that is sold with the phone. In addition, one digital MEMS microphone is present in the iPad 2. Revenue in 2011 for MEMS microphones reached $373 million, up 67% from $223 million in 2010.

Also read: Apple buys most MEMS microphones in 2011

Knowles Electronics still dominates the MEMS microphone sphere, but its share of shipments in the overall market has fallen from 88% in 2010 to 75% last year. There are now 8 suppliers producing more than 10 million MEMS microphone units each.

MEMS oscillators recently saw a surge of interest, with the entry of 3 big players. Murata, an established supplier of ceramic oscillators, acquired VTI Technologies in October last year. IDT, the leading manufacturer of complementary metal-oxide-semiconductor (CMOS) timing devices, introduced its first MEMS timing product in November. NXP, a supplier of real-time clocks, brought its MEMS timing debut to the Consumer Electronics Show in January 2012.

Read the IHS report, Consumer MEMS Continue to Thrive on Smartphones, Tablets and Ultrabooks, at http://www.isuppli.com/MEMS-and-Sensors/Pages/Consumer-MEMS-Continue-to-Thrive-on-Smartphones-Tablets-and-Ultrabooks.aspx?PRX

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European collaboration to develop organic and large-area electronics

February 27, 2012

Europe’s leading organic and large-area electronics (OLAE) organizations have joined forces in the Framework 7 project COLAE, which aims to speed up the commercialization and adoption of organic and large area electronics by promoting collaboration between industry clusters throughout Europe. COLAE will utilize the resources and know-how of the project partners to provide tools and services for the existing organic electronics industry, as well as supporting the entry of new players.

The OLAE market is expected to grow swiftly, with leading forecasters predicting a worldwide industry worth up to $96bn by 2020 (IDTechEx, 2011) as it promises the opportunity for low cost manufacturing of electronic circuits on rigid or flexible substrates leading to the creation of an innovative range of products such as flexible displays, large-area lighting, logic & memory, sensors, batteries, smart bandages, intelligent tickets, low-cost solar cells and entirely new physical forms for functional electronic devices. Ilkka Kaisto of VTT, the project coordinator says, “The COLAE collaboration will allow Europe to remain at the forefront of developing this key technology area, while driving future advancements in highly lucrative markets.”

COLAE will provide training events for newcomers to the technology as well as for experienced researchers and production staff. “We aim to help Europe’s OLAE technologists stay at the leading edge. We need a strong and growing talent pool in order to compete on a global level,” says Chris Rider of The Cambridge Integrated Knowledge Centre (CIKC). COLAE will also provide training to stimulate entrepreneurship within the sector.

COLAE will help companies assess the viability of implementing their product ideas using OLAE technologies, with technology feasibility analyses covering a wide range of topics from IPR landscaping to product design and cost estimation. In addition, COLAE will assist companies in accessing pilot production facilities located throughout the COLAE network.

The COLAE project will create a ‘virtual foundry’ which will offer a networked hub of expertise and facilities that can be accessed by companies across Europe. Martin Raditsch of InnovationLab in Germany says “This is a real opportunity for business to de-risk their development by not investing in facilities until their product is ready for large scale production. The partners bring together a real variety of knowhow and services which together can provide integrated solutions for the industry”.

As well as assisting OLAE organizations, COLAE will focus on raising awareness with end users. “We have a remit to get end users interested in using organic electronics in their products. These technologies can revolutionize some of the main application areas but the manufacturers may not realize that the opportunities are out there,” says Ed Van Den Kieboom of Innovation Fab in The Netherlands.

“This project involves some of the key movers and shakers in the OLAE industry, and together we can make a real difference to the pace of commercialization and adoption for this exciting technology” said Martin Walkinshaw of CPI in the UK.