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Yamaichi Electronics presents Test Contactors for lab and reliability applications and ultra fine pitch semiconductor devices.

New semiconductor devices, like wafer level CSPs for mobile applications, have ball pitches of 0.35mm. And there is a trend to shrink towards lower pitches.

For testing such devices, Yamaichi Electronics in Europe (European headquarters in Munich, Bavaria) develops test contactors (TC) within the YED254 and YED274 series. The TC is individually modified and designed for different outline dimensions of the package. Very important is a homogeneous force distribution on the device surface to avoid device cracking.

Through Yamaichi Electronics’ experience in developing test and burn-in sockets, the opening and closing mechanism is released for easy handling. The test contactor is designed with compression mount technology, therefore no soldering is needed. Selected materials like air craft aluminum, PEEK, and ceramic PEEK make the socket robust.

This offers the customer a variety of TCs which can be used in any custom application:

  • Evaluation: the first silicon has been received to verify the functionality
  • HAST/HTOL/ELFR: reliability and stress tests for pre-qualification and during silicon production
  • ESD/Latch-Up Test: performed as part of product qualification
  • Failure Analysis: finding device malfunctions during development, production and field

To fulfill these requirements, Yamaichi Electronics has a portfolio of probe pins. The low inductance probe pin for the 0.35mm pitch has a length in working position of only 1.7mm. All pins have been electrical qualified and the standard data are available on request. This helps to select the best performing pin for our customers’ individual needs.

LG Innotek, a leading global materials and components manufacturer, today announced that the company started to produce high-power LED packages (H35C4 Series) featuring 180lm/W, which are the highest efficacy in the world.

LG Innotek improves the efficacy of high-power LED packages by 13% compared to the previous packages. The Company said that the H35C4 Series will be supplied to the global market in October.

LG Innotek used its proprietary vertical LED chip technology to optimize the manufacturing and mixing process of the fluorescent substance that produces the light for its LED chips, thus improving the performance of their LED packages. This performance is at least 10% better than all other competing products.

These LED packages boast a efficacy of 152lm/W at 85℃, 700mA under the actual usage environment of most LED packages. It beats the efficacy of competing products by 10lm/W or more.

Through optimizing “white conversion technology”, the lifespan of the product has also in-creased greatly. According to the expected lifespan based on LM-80, the LED lighting reliability evaluation criteria used by the US Environmental Protection Agency (EPA), the average lifespan of LG Innotek’s product is 150,000 hours. This is almost three times longer than existing products, which have a lifespan of 51,000 hours.

In addition, LG Innotek has established a product line-up that encompass all ranges of color temperatures and rendering, including warm white (2700K), neutral white (5000K), cool day-light (6500K), and High CRI (CRI>90). Customers can apply these products for their use in LED lighting.

LG Innotek will further stay focused on developing high performance and value product such as High Power LED Package featuring more than 5 watt and UV LED. The company also has a plan to enhance its LED lighting line-up for automotive as well mobile application.

X-FAB Silicon Foundries, a More-than-Moore foundry, today announced new transistors that have drastically reduced flicker noise on its mixed-signal 0.35µm and 0.18µm CMOS process platforms. Flicker noise in CMOS MOSFETs has been reduced in both the n-channel device in the XH035 0.35µm process and the p-channel device in the XH018 0.18µm process by a factor of five, thereby setting the industry benchmark.

The new XH035 3.3V n-channel MOSFET has a lower flicker noise comparable to that of its companion XH035 3.3V p-channel MOSFET, when referenced to its input, and maintains the standard n-channel MOSFET’s threshold voltage and current drive capability. Using both types of low-noise transistors it is possible to design improved, lower-noise amplifier variants with a significantly higher signal-to-noise ratio (SNR), and to make circuits that are more compact with better performance and are more cost-effective. Similarly, the new 0.18µm process XH018 3.3V p-channel MOSFET exhibits a much lower flicker noise level than the standard p-channel device. The new low-noise XH018 3.3V p-channel device behavior now is similar to that of the low-noise XH035 3.3V p-channel MOSFET device.

Dr. Jens Kosch, Chief Technical Officer at X-FAB, explained the significance and cost-effectiveness of the new low-noise CMOS transistors: “For years X-FAB has set the benchmark for low-noise transistors with our p-channel MOSFET transistor in our 0.35µm technology. When our customers asked for additional low-noise transistors, we developed our XH035 low-noise n-channel MOS transistor (NMOS) and our XH018 p-channel MOS transistor. The combination of the complementary XH035 n- and p-channel transistors offers designers more freedom in their circuit designs. No longer are they limited to only a low-noise p-channel device, and they benefit from having no additional mask layer expense. In addition, the new XH018 p-channel device makes it possible to develop noise-critical designs for 0.18µm processes.”

The new 0.35µm lower-noise n-channel transistor and its low-noise p-channel counterpart, integrated within the XH035 process design kit (PDK), are available immediately for new designs. Noise parameters are included within the device models to facilitate an accurate simulation of the noise behavior of a circuit prior to its actual use. For the 0.18µm XH018 process, the new lower-noise 3.3V p-channel MOSFET will become available for new designs in November 2015.

United Microelectronics Corporation (UMC), a global semiconductor foundry, today announced that it has entered high volume production for touch IC applications manufactured on UMC’s 0.11um eFlash process. The specialized technology, first introduced by UMC in late 2012 as the foundry industry’s first, true 12-volt aluminum back-end-of-line (BEoL) process, is developed for next generation touch controller IC and IoT applications. Compared to 0.18um, 0.11um provides smaller and faster logic devices for higher performance, while enabling the integration of higher density embedded Flash and SRAM for use in microcontrollers for touch-screen products of all sizes.

Kurt Huang, senior director of corporate marketing at UMC, said, “Touch panels have become the predominant interface used for today’s electronics. A key advantage of UMC’s touch platform solution is that we provide the 0.11um eFlash with proprietary flash macro design services to IC designers. We also offer the best cost vs. performance by incorporating an aluminum BEoL process to serve the highly competitive touch IC market. In addition, just like our 0.18um eFlash, support for true 12-volt power meets the high signal-to-noise ratio (SNR) requirements needed for today’s larger touch screens and ‘hovering’ applications used during web navigation on touch surfaces.”

UMC’s 0.11um touch IC platform delivers more than three times the SNR improvement over today’s widely used 3.3V solution, allowing IC designers to create a new generation of enhanced touch interface products. The foundry has extensive experience manufacturing touch controller ICs, with more than 30 touch customers in production at the foundry and over 40 million touch ICs shipped per month. The 0.11um process is developed on 8-inch manufacturing using the most aggressive aluminum BEoL technology, allowing touch IC designers to enjoy lower NRE and related costs to increase market competitiveness. UMC also provides in-house flash IP to speed time-to-market and facilitate customization to address evolving market trends. An ultra-low leakage (uLL) process is currently being developed to further reduce core current on devices and SRAM by up to four times.

As a response to meet the increasing demands (higher heat/brightness characteristics) of cutting-edge LED technologies, Shin-Etsu Silicones of America (SESA), a U.S. subsidiary of Shin-Etsu Chemical Co. Ltd. of Japan, has recently introduced its new optically clear LIMS (Liquid Injection Molding System) X-34-1972-3 material.

With a transparency of 95%, the new material is ideal for expanding LED applications in street lighting, automotive, and exterior illumination. Notably, its high temperature resistance, compared to thermoplastic resins, allows molded silicone optics to be positioned in close proximity to the LED light source without yellowing or cracking over extended operating life spans.

According to SESA’s North America Marketing Manager, Eric Bishop, “Next-generation HBLED systems are getting hotter as light output continues to increase. The advanced engineering properties of our X-34-1972-3 material delivers unparalleled heat resistance and clarity at these higher operating temperatures.”

Bishop also noted that the material has been tested in-house and at customers with promising results.

The optically clear LIMS X-34-1972-3 material will be on display during SESA’s open-house demonstration at their LIMSTM Technical Center in Akron, Ohio on Monday, October 12 (1:00 pm – 5:00 pm). The informal event will feature the production of 100% silicones magnifying lenses and the opportunity to network with industry suppliers and associates.

X-34-1972-3 properties:

  • Viscosity (A/B): 450/450 Pa.s
  • Hardness: 70 A
  • Tensile Strength: 7.5 MPa
  • Tear Strength: 12kN/m
  • Refractive Index: 1.41
  • Transparency: 95%

Global semiconductor capital equipment manufacturer OEM Group announced today that it has launched its new Cintillio-S (TM) automated batch wet chemical processing system. This automated batch system integrates industrial automation with the Cintillio platform, which continues to be the leading system for both Acid and Solvent processing since its introduction in 2009. This next evolution provides automated wafer handling technology and replaces the SEMITOOL Spectrum and Magnum platforms which were acquired last year from Applied Materials.

“The Cintillio-S incorporates all of the excellent features of Cintillio and adds the advantages of industrial automation,” said Graham Pye, CPT Product Manager at OEM Group. “Using Cintillio as the base processing module and incorporating industrial automation on the front-end allows us to move away from the custom-design philosophy used in the Spectrum and Magnum platforms. The use of common electro-mechanical components for both the process and automation modules ensures supply chain continuity for end-users. In addition, the use of Cintillio process module ensures existing Spectrum and Magnum users have a seamless process transfer from these older platforms.”

With global demand for semiconductor devices increasing and the constant pressure to deliver those products at minimal cost, today’s manufacturers increasingly seek to maximize tool utilization. These firms—particularly those utilizing wafers at 200mm and above, or seeking to invest in technology to produce at this level—universally view automation as an essential element for increasing efficiency and process throughput as a means of meeting this objective.

“The main drivers for automation at 200mm and above is to reduce manual operator intervention and dependency”, states Paul Inman, CPT Business Development at OEM Group. “This provides ergonomic relief to operators, fulfills the automation requirements of SMIF and FOUP operations, and has the added advantage of automated wafer control. The Cintillio-S handling solution is well-suited for those manufacturers who require an automated wet processing mini-environment in a compact footprint, including power semiconductor, CMOS IC, Advanced Packaging, MEMS, and LED applications.”

Through higher productivity, automation, and advanced process control, the Cintillio-S platform provides effective Acid, Solvent, and Ozone process solutions for FEOL and BEOL manufacturing, as well as wafer-scale packaging, with low cost-of-ownership. By leveraging the advantages of the Cintillio G2 system—including flexible chemical layout, modern controller design and diagnostics, and efficient exhaust design and facility requirements—the Cintillio-S gives manufacturers the tool it needs to meet its production demands today and in the future.

 

Individual transistors made from carbon nanotubes are faster and more energy efficient than those made from other materials. Going from a single transistor to an integrated circuit full of transistors, however, is a giant leap.

“A single microprocessor has a billion transistors in it,” said Northwestern Engineering’s Mark Hersam. “All billion of them work. And not only do they work, but they work reliably for years or even decades.”

When trying to make the leap from an individual, nanotube-based transistor to wafer-scale integrated circuits, many research teams, including Hersam’s, have met challenges. For one, the process is incredibly expensive, often requiring billion-dollar cleanrooms to keep the delicate nano-sized components safe from the potentially damaging effects of air, water, and dust. Researchers have also struggled to create a carbon nanotube-based integrated circuit in which the transistors are spatially uniform across the material, which is needed for the overall system to work.

Now Hersam and his team at Northwestern University have found a key to solving all these issues. The secret lies in newly developed encapsulation layers that protect carbon nanotubes from environmental degradation.

Supported by the Office of Naval Research and the National Science Foundation, the research appears online in Nature Nanotechology on September 7. Tobin J. Marks, the Vladimir N. Ipatieff Research Professor of Chemistry in Northwestern’s Weinberg College of Arts and Sciences and professor of materials science and engineering in the McCormick School of Engineering, coauthored the paper. Michael Geier, a graduate student in Hersam’s lab, was first author.

“One of the realities of a nanomaterial, such as a carbon nanotube, is that essentially all of its atoms on the surface,” said Hersam, the Walter P. Murphy Professor of Materials Science and Engineering. “So anything that touches the surface of these materials can influence their properties. If we made a series of transistors and left them out in the air, water and oxygen would stick to the surface of the nanotubes, degrading them over time. We thought that adding a protective encapsulation layer could arrest this degradation process to achieve substantially longer lifetimes.”

Hersam compares his solution to one currently used for organic light-emitting diodes (LEDs), which experienced similar problems after they were first realized. Many people assumed that organic LEDs would have no future because they degraded in air. After researchers developed an encapsulation layer for the material, organic LEDs are now used in many commercial applications, including displays for smartphones, car radios, televisions, and digital cameras. Made from polymers and inorganic oxides, Hersam’s encapsulation layer is based on the same idea but tailored for carbon nanotubes.

To demonstrate proof of concept, Hersam developed nanotube-based static random-access memory (SRAM) circuits. SRAM is a key component of all microprocessors, often making up as much as 85 percent of the transistors in the central-processing unit in a common computer. To create the encapsulated carbon nanotubes, the team first deposited the carbon nanotubes from a solution previously developed in Hersam’s lab. Then they coated the tubes with their encapsulation layers.

Using the encapsulated carbon nanotubes, Hersam’s team successfully designed and fabricated arrays of working SRAM circuits. Not only did the encapsulation layers protect the sensitive device from the environment, but they improved spatial uniformity among individual transistors across the wafer. While Hersam’s integrated circuits demonstrated a long lifetime, transistors that were deposited from the same solution but not coated degraded within hours.

“After we’ve made the devices, we can leave them out in air with no further precautions,” Hersam said. “We don’t need to put them in a vacuum chamber or controlled environment. Other researchers have made similar devices but immediately had to put them in a vacuum chamber or inert environment to keep them stable. That’s obviously not going to work in a real-world situation.”

Hersam imagines that his solution-processed, air-stable SRAM could be used in emerging technologies. Flexible carbon nanotube-based transistors could replace rigid silicon to enable wearable electronics. The cheaper manufacturing method also opens doors for smart cards — credit cards embedded with personal information to reduce the likelihood of fraud.

“Smart cards are only realistic if they can be realized using extremely low-cost manufacturing,” he said. “Because our solution-processed carbon nanotubes are compatible with scalable and inexpensive printing methods, our results could enable smart cards and related printed electronics applications.”

QEOS, Inc., a designer of connectivity and sensing CMOS millimeter-wave (mmWave) solutions, and GLOBALFOUNDRIES, a provider of advanced semiconductor manufacturing technology, today announced they are partnering to co-develop the industry’s first mmW CMOS platform.

Leveraging GLOBALFOUNDRIES’ 45nm and 40nm low-power process technologies, the mmW platform includes support for the higher data rates required in future mobile broadband access networks, while enabling customers to integrate mixers, Low Noise Amplifiers (LNAs), Power Amplifiers (PAs), and Inter-Frequency (IF) amplifiers, all in a single package. The co-designed platform will leverage GLOBALFOUNDRIES’ production-proven expertise in advanced silicon RF technologies and QEOS’ next-generation design environment and IP to expand the mmWave wireless technology offerings to enable gigabit interactivity everywhere—from centimeters to hundreds of meters—at a cost of less than $500 per link.

Demonstrations of a 77GHz CMOS Design Library and an adaptive 60GHz CMOS link for gigabit wireless outdoor connectivity can be seen during European Microwave Week, to be held September 6 – 11, 2015 in Paris, France.

The available mmW IP includes:

  • Low-power Bits In/Out architecture
  • BIST/BIOS for digital die sort
  • Beam Steering
  • Integrated Transceiver
  • Frequency Synthesizer
  • Co-designed System in Package with Antenna

“MmW technology is a key pillar for next-generation wireless markets including IoT, 5G and automotive,” said Ted Letavic, department leader of strategic applications and product segments at GLOBALFOUNDRIES. “Our expanded partnership with QEOS enables our customers to address the challenging requirements for adaptive next-generation gigabit wireless sensing and connectivity, and lays the foundation for accelerating market adoption of mmW products and solutions in high-growth markets.”

“We are honored to partner with one of the world’s leading advanced silicon manufacturers to create the industry’s first mmW CMOS platform. We look forward to supporting our customers in the rapidly growing mmWave markets,” said Ara Chakrabarti, Chief Operating Officer of QEOS, Inc.

“GLOBALFOUNDRIES’ and QEOS’ partnership is a key milestone for enabling the next generation of low-power mmWave CMOS,” said Rob Shaddock, Chief Technology Officer of TE Connectivity. “TE Connectivity has been watching the developments in this field closely, and we believe that this is going to have a major impact across the connectivity and sensing markets.”

As part of the GLOBALSOLUTIONS partnership, QEOS 45/40nm based mmWave CMOS IP will be available in two forms. Basic block level IP will be available from GLOBALFOUNDRIES, while more complex subsystem IP will be licensable directly from QEOS. QEOS will provide support and design services for all IP.

DCG Systems today announces the release of the OptiFIB Taipan circuit edit solution for the most advanced integrated circuit (IC) nodes. The first OptiFIB Taipan system surpassed all benchmark specifications for 10nm edit capabilities at a leading microprocessor manufacturer, resulting in an additional order from the same customer. Orders have also been received from leading fabless and foundry customers looking to support their advanced node development efforts.

DCG-Systems-OptiFIB-Taipan-full-system-small

OptiFIB Taipan System

Circuit edit technology is primarily used by product engineers for design corrections during the IC manufacturing process. By using circuit edit instead of producing a new mask every time corrections are needed, organizations can reduce their product time-to-market cycle by four to six weeks each time a new mask production is avoided. In addition, circuit edit solutions help to resolve reliability issues and accelerate yield ramp.

The OptiFIB Taipan system has been completely re-engineered to provide exceptional accuracy and control during the circuit edit process. The system has a new chamber and stage to enhance beam placement accuracy and superior drift control. In addition, the OptiFIB Taipan column retains DCG’s unique, patented coaxial design to enable simultaneous capture of focused ion beam (FIB) and optical images. The column is equipped with piezo motors for control of apertures and gun to drive higher resolution and productivity.

The fully redesigned gas injection system, the Scorpion Plus, offers exceptionally pure and highly controlled chemical dosing.

“DCG Systems’s introduction of the OptiFIB Taipan continues our leadership in providing circuit edit solutions for the industry’s most advanced IC nodes,” said Ketan Shah, circuit edit business unit manager. “The new system offers the best circuit edit selectivity as well as the highest imaging and milling resolution of any circuit edit tool currently available on the market.”

Backside circuit modification on a FinFET device performed by OptiFIB Taipan

Backside circuit modification on a FinFET device performed by OptiFIB Taipan

Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride devices in automobiles and related areas.

Low resistance resulting in reduced power consumption and heating have attracted researchers to study GaN systems for nanoelectronics. Previous work has focused on laterally oriented GaN and AlGaN transistors, which readily provide a high mobility and low resistance. However these structures are limited in terms of the break-down and threshold voltage that can be achieved without compromising device size, which may make them unsuitable for automobile applications. Now Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan show how they can overcome these limitations.

Oka and his team adopted the vertical orientation. Previous work has already shown that in this orientation the breakdown voltage can be increased by increasing the drift region thickness without compromising the device size. However, so far these structures have still been limited in the blocking voltage that the device can withstand while maintaining a low on-resistance.

“We redesigned the thicknesses and doping concentrations of channel and drift layers to reduce the resistances of the epitaxial layers while maintaining a blocking voltage of over 1.2 kV,” explain Oka and colleagues in the report of their work. They also use hexagonally shaped trench gates to increase the gate width per unit area thereby reducing the specific on-resistance. “These led to the excellent performance of 1.2-kV-class vertical GaN MOSFETs [metal-on-silicon field-effect-transistors] with a specific on-resistance of less than 2 mΩ cm2,” they conclude.