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Cypress Semiconductor Corp. today announced a new family of Energy Harvesting Power Management Integrated Circuits (PMICs) that enable tiny, solar-powered wireless sensors for Internet of Things (IoT) applications. The new devices are the world’s lowest-power, single-chip Energy Harvesting PMICs, and can be used with solar cells as small as 1 cm(2). The new PMIC devices are fully integrated, making them ideal for batteryless Wireless Sensor Nodes (WSNs) that monitor physical and environmental conditions for smart homes, commercial buildings, factories, infrastructure and agriculture.  Cypress offers a complete, battery-free Energy Harvesting solution that pairs the S6AE101A PMIC, the first device in the new family, with the EZ-BLE PRoC module for Bluetooth Low Energy connectivity, along with supporting software, in a $49 kit.

The WSN IoT device market is expected to grow to more than 5 billion units by 2020, putting a premium on battery-free implementations to reduce cost and maintenance problems. The placement of a WSN may limit its size and the amount of light available, thereby limiting the size and power output of the solar module and the startup power available for the Energy Harvesting PMIC. The new Cypress Energy Harvesting PMIC devices address these challenges with startup power of 1.2uW–4x lower than the nearest competitor–and consumption current as low as 250nA, maximizing the power available for the sensing, processing and communications functions of a target application. The fully-certified, small-form-factor EZ-BLE PRoC module, which is based on Cypress’s PRoC BLE Programmable Radio-on-Chip solution, works with the PMIC devices to contribute to the low power and ease-of-use of an energy harvesting system solution.

“The most compelling new Wireless Sensor Nodes that will drive IoT growth are self-powered, can be deployed anywhere for more than 10 years, and require minimal deployment and maintenance costs,” said Kiyoe Nagaya, vice president of the Analog Business Unit at Cypress. “Using our new Energy Harvesting PMIC and EZ-BLE PRoC Bluetooth Smart module, Cypress offers a complete solution that enables developers to create solar-powered WSNs for batteryless IoT devices.”

Scientists at Rice University have created a solid-state memory technology that allows for high-density storage with a minimum incidence of computer errors.

The memories are based on tantalum oxide, a common insulator in electronics. Applying voltage to a 250-nanometer-thick sandwich of graphene, tantalum, nanoporous tantalum oxide and platinum creates addressable bits where the layers meet. Control voltages that shift oxygen ions and vacancies switch the bits between ones and zeroes.

The discovery by the Rice lab of chemist James Tour could allow for crossbar array memories that store up to 162 gigabits, much higher than other oxide-based memory systems under investigation by scientists. (Eight bits equal one byte; a 162-gigabit unit would store about 20 gigabytes of information.)

A schematic shows the layered structure of tantalum oxide, multilayer graphene and platinum used for a new type of memory developed at Rice University. The memory device overcomes crosstalk problems that cause read errors in other devices. Credit: Tour Group/Rice University

Details appear online in the American Chemical Society journal Nano Letters.

Like the Tour lab’s previous discovery of silicon oxide memories, the new devices require only two electrodes per circuit, making them simpler than present-day flash memories that use three. “But this is a new way to make ultradense, nonvolatile computer memory,” Tour said.

Nonvolatile memories hold their data even when the power is off, unlike volatile random-access computer memories that lose their contents when the machine is shut down.

Modern memory chips have many requirements: They have to read and write data at high speed and hold as much as possible. They must also be durable and show good retention of that data while using minimal power.

Tour said Rice’s new design, which requires 100 times less energy than present devices, has the potential to hit all the marks.

“This tantalum memory is based on two-terminal systems, so it’s all set for 3-D memory stacks,” he said. “And it doesn’t even need diodes or selectors, making it one of the easiest ultradense memories to construct. This will be a real competitor for the growing memory demands in high-definition video storage and server arrays.”

The layered structure consists of tantalum, nanoporous tantalum oxide and multilayer graphene between two platinum electrodes. In making the material, the researchers found the tantalum oxide gradually loses oxygen ions, changing from an oxygen-rich, nanoporous semiconductor at the top to oxygen-poor at the bottom. Where the oxygen disappears completely, it becomes pure tantalum, a metal.

The researchers determined three related factors give the memories their unique switching ability.

First, the control voltage mediates how electrons pass through a boundary that can flip from an ohmic (current flows in both directions) to a Schottky (current flows one way) contact and back.

Second, the boundary’s location can change based on oxygen vacancies. These are “holes” in atomic arrays where oxygen ions should exist, but don’t. The voltage-controlled movement of oxygen vacancies shifts the boundary from the tantalum/tantalum oxide interface to the tantalum oxide/graphene interface. “The exchange of contact barriers causes the bipolar switching,” said Gunuk Wang, lead author of the study and a former postdoctoral researcher at Rice.

Third, the flow of current draws oxygen ions from the tantalum oxide nanopores and stabilizes them. These negatively charged ions produce an electric field that effectively serves as a diode to hinder error-causing crosstalk. While researchers already knew the potential value of tantalum oxide for memories, such arrays have been limited to about a kilobyte because denser memories suffer from crosstalk that allows bits to be misread.

The graphene does double duty as a barrier that keeps platinum from migrating into the tantalum oxide and causing a short circuit.

Tour said tantalum oxide memories can be fabricated at room temperature. He noted the control voltage that writes and rewrites the bits is adjustable, which allows a wide range of switching characteristics.

Wang said the remaining hurdles to commercialization include the fabrication of a dense enough crossbar device to address individual bits and a way to control the size of the nanopores.

Toshiba America Electronic Components, Inc. today launched its first 16-megapixel (MP) CMOS image sensors: T4KC3 and T4KC3-121, which includes phase detection auto-focus (PDAF). Designed for use in smartphones and tablets, the backside-illuminated (BSI) chips are among the world’s smallest class of CMOS image sensors, and achieve both high-performance image capture and low power consumption.

The functional range of the new sensors supports users in capturing beautiful images and movies. The T4KC3-121 is the first Toshiba sensor to feature PDAF technology, which makes it easier for mobile devices to capture both still and moving objects. This approach to AF technology, also used in single-lens reflex (SLR) cameras, takes an incoming image and splits it between two pixels, allowing the camera to figure out exactly how out-of-focus a subject is, and then immediately hone in and track movement.

“Mobile device manufacturers are constantly striving to design and build the most powerful, power-efficient devices in the smallest possible form factors,” said Andrew Burt, vice president of the Image Sensor Business Unit, System LSI Group at TAEC. “To support this objective, both new 16MP CMOS sensors are housed in a small module (both area and height) and use Toshiba’s new low-power circuit design method to lengthen battery life when the smartphone or tablet is being used in video mode.”

Image brightness in both new sensors is boosted by up to 4x by Toshiba’s Bright Mode technology, which enables HD video capture at 240fps equivalent. They also support high dynamic range (HDR) to capture natural images of scenes with a high contrast ratio, ending the problem of over- and underexposed images.

The T4KC3 and T4KC3-121 achieve output speeds of up to 30fps at full 16MP-resolution (4624 x 3472pixels) with power consumption figures of just 240mW or lower. Full-HD outputs of 1920 x 1080 pixels are supported at frame rates of up to 60fps, and HD outputs (1280 x 720 pixels) are supported at 120fps in normal mode and 240fps in Bright Mode.

The new sensors have an optical size of 1/2.78 inch and pixel pitch of 1.12 micrometer BSI. Additionally, they incorporate16Kbit one time programmable memory that can store lens shading correction data for four conditions at maximum, such as indoors and outdoors, daylight and sunset. Settings can be switched by one simple command.

Toshiba Corporation today announced the development of the world’s first 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology. The prototype will be shown at Flash Memory Summit 2015, to be held from August 11 to 13 in Santa Clara, USA.

16-die Stacked NAND Flash Memory with TSV Technology (Photo: Businesswire)

16-die Stacked NAND Flash Memory with TSV Technology (Photo: Business Wire)

The prior art of stacked NAND flash memories are connected together with wire bonding in a package. TSV technology instead utilizes the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high speed data input and output, and reduces power consumption.

Toshiba’s TSV technology achieves an I/O data rate of over 1Gbps which is higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately 50%*2 power reduction of write operations, read operations, and I/O data transfers.

NAND Flash Memory with TSV Technology (Graphic: Business Wire)

NAND Flash Memory with TSV Technology (Graphic: Business Wire)

This new NAND flash memory provides the ideal solution for low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD.

A part of this applied technology was developed by the New Energy and Industrial Technology Development Organization (NEDO).

Following the launch of the 12th Electronics Packaging Research Consortium (EPRC12) in 2013, A*STAR’s Institute of Microelectronics (IME) and 11 of its consortium partners across the semiconductor supply chain have developed novel solutions in integrated circuit (IC) packaging.

The consortium has achieved its objectives of developing novel solutions to overcome the reliability and performance issues and technical challenges in packaging solutions for compact sized consumer electronics and high power electronics. To achieve this, the consortium leveraged IME’s capabilities in wafer level packaging, assembly processes and thermo-mechanical modelling as well as the constant feedback from the industry players.

These solutions allow for high density packaging that enables greater system capabilities, such as increased memory and bandwidth and faster processing speed, paving the way for more powerful and efficient systems in consumer devices and high power electronics.

Improving reliability in packaging which utilizes Cu/low-k interconnects

The consortium successfully reduced the high thermo-mechanical stress that is generated in the assembly of IC packaging that adopts Cu pillars and low-k chips.

This was demonstrated through thermal compression bonding for large size chip (18x18mm chip) and package (25mm x 25mm FCBGA package).

The consortium reduced the pitch size of Cu pillars on a two-layer low cost organic substrate and bare Cu bond pads from 40μm to 30μm through thermal compression bonding. This process not only enables higher density interconnects but also enables the bonding of Cu pillar to bare Cu bond pads without traditional NiAu plating or organic solder preservative coating on Cu bond pads, leading to lower substrate costs.

A modeling methodology and a set of design guidelines were devised to help manufac turers c reate lo w-stress gene rating package designs. With these innovative advanced packaging solutions, packaging which utilises Cu/low-k interconnects becomes a viable option for further system scaling in the next generation computing and portable electronics such as smart phones and tablets.

Enabling smaller form factor in 3D Fan-out Package-on-Package (3D PoP)

The consortium reduced the existing package profile of the 3D Fan-out Package- on-Package to achieve higher power efficiency and cost-effectiveness across a wide range of consumer mobile applications including mobile devices, tablets, laptops and digital cameras.

This was achieved by removing the substrate on the Printed Circuit Board (PCB) that carries the passive components supporting electrical performance, and embedding these components within the package. The innovative technique which employs a Redistribution Layer (RDL) process flow and a Through Mold Via technology, reduces the package profile by approximately 25 per cent to achieve a higher density package, and also reduces the manufacturing cost by approximately 15 per cent.

Improving thermal management and power efficiency in high power electronic systems

The consortium has devised innovative packaging technologies to improve thermal management and power efficiency of high power electronic systems.

By applying a zinc-based high temperature soldering process and material optimisation, the consortium has managed to raise the maximum junction temperature of the TO-220, which is commonly used for high power switching device packaging, from 170 C to 245 C.

Thermal management capabilities were also demonstrated in a double-sided cooling power inverter module. The consortium utilised a flip-chip bonding and compression molding process to create a flat structure which serves as a thermally conductive path for both top and bottom surfaces of a power inverter module. This innovative process enables thermal resistance of up to 0.18 W/K, surpassing the conventional single-sided cooling modules by approximately 40 per cent.

The consortium achieved a 30 per cent height reduction in lead frame based Intelligent Power Modules (IPMs), enabling higher integration of power devices, control IC and passive components within a more compact package. This was achieved through a cost-effective technique of replacing the lead frame found in the IPMs with a thin and fine layer substrate and metal layer structure.

“These technology breakthroughs signify the consortium’s potential to keep pace with the rapid trends of advanced packaging. Through close collaboration with our industry partners, we have overcome technical hurdles to achieve smaller form factor and higher performance for next generation applications. IME will continue to contribute its research capabilities to develop timely solutions,” said Prof. Dim-Lee Kwong, Executive Director of IME.

“Heraeus have been working with IME through the different EPRC consortia for the past few years in developing new solutions to keep up with the emerging trends in the industry. The EPRC12 has helped Heraeus in understanding the challenges and requirements of high temperatures die attach materials and the processes, allowi ng us to address the industry’s unmet needs i n high temperature Pb free die attach materials for power device packaging,” said Dr. Zhang Xi, Head of Global R&D Bonding Wire, HET- Innovation, Heraeus Materials, Singapore Pte Ltd.

“Fan-Out Wafer Level Packaging (FOWLP) is a key technology for the semiconductor industry. By achieving the process development of dual side RDL on mold wafer and polymer filling on TMV (Through Mold Via) for FO PoP, the consortium helped us to understand the process requirement and overcome the material development challenges,” said Mr Takayoshi Suzuki, General Manager, Tokyo Ohka Kogyo, Singapore.

ON Semiconductor has introduced an array of new AEC-Q100-compliant integrated circuits (ICs) optimized for implementation into next generation automobile designs.

The NBA3N200/1/6S multi-point low voltage differential signaling (M−LVDS) line driver/receiver family of devices operates off a 3.3 volt (V) power supply. The NBA3N200S and NBA3N201S both support signaling rates of up to 200 megabits per second (Mbps) and have a common-mode voltage range -1 V to 3.4 V. These devices have Type-1 receivers that detect the bus state with as little as 50 millivolt (mV) of differential input voltage over the common-mode voltage range. A differential input voltage hysteresis of 25mV on the receiver prevents oscillations at the output due to slow changing input signals or loss of input. The NBA3N206S also supports 200 Mbps signaling rates with a Type-2 receiver that has a 0.1 V threshold. The offset voltage threshold function of the Type-2 receiver can detect open-circuit, idle bus and various other fault conditions that could harm the system. These devices are targeted for use in automotive applications such as headlamp pixel lighting, specifically for data transmission between the LED front light control unit and the headlight.

The NCV8154 140 mV rated dual output linear voltage regulator has an input voltage range covering 1.9 V to 5.25 V and two independent input voltage pins. Highly optimized for powering the RF blocks within automotive infotainment systems, this device is capable of providing a very stable and highly accurate voltage, with ultra-low noise plus elevated power supply rejection ratio (PSRR). The NCV8170 low drop-out (LDO) regulator is designed specifically for portable battery-powered applications, such as vehicle keyless entry systems, with a typical current consumption of just 500 nanoamperes (nA). Furthermore, a dynamic transient boost feature augments this device’s transient response characteristics. The NCV8715 is a high stability 50 milliamp (mA) LDO with an input voltage range that reaches up to 24 V and a ground current consumption of 4.7 microamperes (µA) over the full output load range. This device is very well suited to use with automotive grade microcontroller units. The NCV8154 / NCV8715 / NCV8170 devices each feature thermal shutdown and current limit protection mechanisms that ensure reliable operation.

Also introduced are single N-channel MOSFET devices capable of delivering incredibly low on-state resistance RDS(on) figures, minimizing conduction losses and improving overall operational efficiency levels. The NVMFS5C404NLNVMFS5C410NLNVMFS5C423NL and NVMFS5C442NL 40 V rated MOSFETs have typical RDS(on) values at 10 V of 0.56 mΩ, 0.71 mΩ, 1.6 mΩ and 2.2 mΩ respectively. These are supplemented by the 60 V NVMFS5C604NLNVMFS5C612NLNVMFS5C646NL and NVMFS5C670NL devices, which have typical RDS(on) values at 10 V of 0.93 mΩ, 1.2 mΩ, 3.8mΩ and 5.1 mΩ respectively. These devices expand the extensive ON Semiconductor portfolio of MOSFETs for use in power switching, load switching, motor control, and other automotive applications.

Intel Corporation and Micron Technology, Inc. today unveiled 3D XPoint technology, a non-volatile memory that has the potential to revolutionize any device, application or service that benefits from fast access to large sets of data. Now in production, 3D XPoint technology is a major breakthrough in memory process technology and the first new memory category since the introduction of NAND flash in 1989.

The explosion of connected devices and digital services is generating massive amounts of new data. To make this data useful, it must be stored and analyzed very quickly, creating challenges for service providers and system builders who must balance cost, power and performance trade-offs when they design memory and storage solutions. 3D XPoint technology combines the performance, density, power, non-volatility and cost advantages of all available memory technologies on the market today. The technology is up to 1,000 times faster and has up to 1,000 times greater endurance3 than NAND, and is 10 times denser than conventional memory.

“For decades, the industry has searched for ways to reduce the lag time between the processor and data to allow much faster analysis,” said Rob Crooke, senior vice president and general manager of Intel’s Non-Volatile Memory Solutions Group. “This new class of non-volatile memory achieves this goal and brings game-changing performance to memory and storage solutions.”

“One of the most significant hurdles in modern computing is the time it takes the processor to reach data on long-term storage,” said Mark Adams, president of Micron. “This new class of non-volatile memory is a revolutionary technology that allows for quick access to enormous data sets and enables entirely new applications.”

As the digital world quickly grows – from 4.4 zettabytes of digital data created in 2013 to an expected 44 zettabytes by 20204 – 3D XPoint technology can turn this immense amount of data into valuable information in nanoseconds. For example, retailers may use 3D XPoint technology to more quickly identify fraud detection patterns in financial transactions; healthcare researchers could process and analyze larger data sets in real time, accelerating complex tasks such as genetic analysis and disease tracking.

The performance benefits of 3D XPoint technology could also enhance the PC experience, allowing consumers to enjoy faster interactive social media and collaboration as well as more immersive gaming experiences. The non-volatile nature of the technology also makes it a great choice for a variety of low-latency storage applications since data is not erased when the device is powered off.

3D Xpoint technology is up to 1000x faster than NAND and an individual die can store 128Gb of data

3D Xpoint technology is up to 1000x faster than NAND and an individual die can store 128Gb of data

New recipe, architecture for breakthrough memory technology

Following more than a decade of research and development, 3D XPoint technology was built from the ground up to address the need for non-volatile, high-performance, high-endurance and high-capacity storage and memory at an affordable cost. It ushers in a new class of non-volatile memory that significantly reduces latencies, allowing much more data to be stored close to the processor and accessed at speeds previously impossible for non-volatile storage.

The innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to faster and more efficient read/write processes.

3D XPoint technology will sample later this year with select customers, and Intel and Micron are developing individual products based on the technology.

Inside every new smartphone, tablet or other digital gizmo are microchips with more circuits — and more processing power — than manufacturers could make a year or two before.

And behind each advance in microchips are innovations, such as one emerging next week from a Twin Cities firm, that consumers never think about or see.

Subodh Kulkarni, chief executive of Golden Valley-based CyberOptics, displayed a new sensor that measures humidity in chip-making.

Subodh Kulkarni, chief executive of Golden Valley-based CyberOptics, displayed a new sensor that measures humidity in chip-making.

At SEMICON West 2015, Golden Valley-based CyberOptics Corp. will unveil a sensor product that lets chipmakers measure the vibration, leveling and humidity inside the machines turning plain silicon wafers into chips. It’s an advance from a previous product that combined two measurements.

For chipmakers, that means slightly less time in a production run needs to be spent taking measurements, and more time can be devoted to making chips. It’s a jump in efficiency that is one of the reasons that digital gadgets keep getting better and cheaper.

For CyberOptics, it’s an addition to a lineup of semiconductor sensors that is the fastest-growing product segment in the company, which has about $45 million in annual sales. “What we are good at is taking different types of sensors and putting them together,” said Subodh Kulkarni, the company’s chief executive.

CyberOptics was started in the 1980s by a University of Minnesota electrical engineering professor named Steven Case, who recognized the role that laser-based sensors could play in lining up circuit boards. Its products were originally used by makers of computers and other electronics items for the assembly of circuits onto boards. It still makes those kinds of sensors, which have advanced to where they measure in 3-D and at eye-blinking speeds.

The company moved into the chip manufacturing industry in 2004 when it first combined a miniature sensor with a Bluetooth wireless transmitter and placed it on a substrate the size of a silicon wafer. That sensor device could then be run through a chipmaking machine to measure its accuracy and performance, sending data wirelessly in real time.

Since chipmakers need to check several attributes, such as whether wafers are being kept level or whether there is dust or other particles in the machine, they needed to run separate sensors through, consuming time that would otherwise be used for actual production.

The company’s new product adds humidity sensors into the multi-sensor package. Keeping track of humidity inside the machines that make chips has become more important as the distance between circuits has shrunk, the innovation that allows more circuits to be put on a chip.

Ever smaller chips

Just this week, IBM announced a breakthrough in making computer chips even smaller, creating a test version of the world’s first semiconductor that shrinks the circuitry to a separation of 7 nanometers. By contrast, today’s fastest computers and servers use microprocessors with circuits of 14- and 22-nanometers. The width of a human hair is about 10,000 times bigger. A strand of human DNA is 2.5 nanometers.

At such tiny widths, moisture inside the machine that is making a chip can create oxidation that renders the silicon wafer useless. While the IBM innovation is several years from becoming a commercial process, each step toward smaller circuits means that the machines and processes to make them need to be better.

“This is all good for us because, when transistors were hundreds of nanometers, you didn’t need to measure things that precisely,” Kulkarni said. “But as the chips get more sophisticated, the manufacturers can no longer afford to use the existing crude tools to do measurements and sensing.”

CyberOptics sold about $8 million worth of advanced sensors for chipmaking last year. It doesn’t break out profitability of such products but, in a filing to securities regulators, it said that its newest products, including semiconductor sensors, “have more favorable margins compared to products we have sold in the past.”

Applied Materials, Inc. today announced a next-generation etch tool, the Applied Centris Sym3 Etch system, featuring an entirely new chamber for atomic-level precision manufacturing. To overcome within-chip feature variations, the Centris Sym3 system leapfrogs current tools to provide chipmakers with the control and precision needed to pattern and create densely packed 3D structures in advanced memory and logic chips.

“Drawing on over 20 years of etch learning and our expertise in precision materials removal, the Sym3 system represents a brand new design, built from the ground up, that solves persistent and impending industry challenges,” said Dr. Raman Achutharaman, vice president and general manager of Applied’s Etch business unit. “Customer traction has been remarkable, resulting in the fastest adoption rate we’ve seen for an etch tool in the company’s history, with record ramp to production at leading-edge fabs.”

The Centris Sym3 etch chamber employs Applied’s True Symmetry technology with multiple tuning controls for optimizing global process uniformity to the atomic level. Key to the design is a focus on controlling and removing etch byproducts, which are increasingly hampering within-chip patterning uniformity. The system mitigates byproduct re-deposition to overcome the challenges of line edge roughness, pattern loading and defects – issues that are becoming more limiting for each successive technology node. Combined with an advanced RF technology that controls ion energy and angular distributions, the Sym3 system delivers unsurpassed vertical profiles for high aspect ratio 3D structures.

The Centris Sym3 platform’s six etch and two plasma clean process chambers feature system intelligence software to ensure that every process in every chamber matches precisely, enabling repeatability and high productivity for high-volume manufacturing. 

Applied Materials, Inc. develops engineering solutions for the semiconductor, flat panel display and solar photovoltaic industries. 

IRT Nanoelec, an R&D consortium focused on Information and Communication Technologies (ICT) using micro- and nanoelectronics, and its partners CEA-Leti, STMicroelectronics and Mentor Graphics have realized an innovative 3D chip called “3DNoC” to demonstrate the use of 3D stacking technology in scalable, complex digital systems-on-chip (SoCs).

The 3DNoC chip is based on a 2D die that can be used in a stand-alone applicative mode, and also in a 3D stack with several dice, to multiply the processing performance of the system. The project’s complete demonstration platform shows both the simulated and measured thermal effects in the 3D chip using a new Mentor Graphics Calibre thermal-analysis prototype.

“The technology developed for this realization can be easily used and transferred to address mixed-technology applications, such as imagers and RF transceivers, or complex digital processing, such as high-performance computing and programmable devices,” said Severine Cheramy, IRT 3D program director. “In parallel with these results, we are working on developments that address more fine-pitch 3D technology than those used in the 3DNoC demonstrator and solutions for thermal dissipation, temporary bonding and stress issues.”

3D-stacking technology is a promising solution to improve both performance and density integration without requiring transition to the next technology node. It allows the integration of different technologies and simplifies the use of small-sized dice to improve modularity and increase yield. In a complex and traditional 2D SoC, the technology node is defined by the most complex function, and reuse methodology is done at the IP level. A 3D system blends several technologies and reuse methodology can be performed at the elementary die, the “chiplet.”

The 3DNoC chip was defined and designed by Leti, with the direct support of STMicroelectronics, using a specific add-on 3D design kit and a set of 3D sign-off verification tools provided by Mentor Graphics. CMOS technology, 3D technology and packaging were realized by ST and Leti, with a “via-middle option” in 65nm CMOS technology. The test and demonstration platform is a joint development among the three partners.

Proving the viability of 3D stacking

IRT Nanoelec provides a multi-skill environment – including technology development, innovative processing architecture, and specific design tools in a global system- methodology approach – for the development of pioneer 3D demonstrators to prove the viability of 3D stacking in a wide range of applications. Although the 3DNoC chip addresses baseband processing, all technology and design bricks are reusable across a range of other applications.

3DNoC is the first worldwide realization of a 3D-scalable processor chip. It goes beyond prior state-of-the-art as a 3D asynchronous communication network that can exploit the maximum performance of vertical links and offer an aggregate 3D network link bandwidth of 450 MByte/s. The strategy, which is based on increasing the performance of a system by stacking several identical dice in the same footprint, is very similar to HMC or HBM memories. In the case of DRAM, byte capacity is multiplied by the number of elementary dice stacked; the 3DNoC circuit multiplies processing performance. 

The Technology

Several identical 65nm CMOS digital dice can be bonded using a face-to-back technology to build a stack of processing elements, using 10µm-diameter through-silicon via (TSV) and 20µm-diameter µpillars and µbumps. In the IRT Nanoelec demonstration, two dice are stacked.

At the elementary die level, provisions were made to allow the stacking of up to four dice: the number of power connections is dimensioned in this way, while the number of signals is constant regardless of the number of stacked dice. Area occupied by the 2,000 TSVs represents about 1 percent of the whole die area (72 mm2) and wafers are thinned to 80µm for TSV revelation at the backside.

3DNoC is mounted in a 581-ball, 0.3mm-pitch BGA package using a stacking-last approach, i.e. the bottom die is bonded on the substrate and after the top one on the bottom.

Targeting digital baseband processing

The digital modules embedded in 3DNoC are computing-intensive IPs, processor cores and programmable DMA engines connected to the NoC routers using a dedicated interface compatible with a packet-switching mechanism.

The global architecture was partitioned in a scalable way to address several modes, depending on the number of antennae used for transmitting-and-receiving levels. The modular elementary die was sized to fit the processing performance required to support the single antenna mode and, by stacking two or four dice, more complex multiple antenna modes are supported. As an example, the 3DNoC chip developed in this project can support up to two antennae for both TX and RX.

Network on Chip (NoC)

For many years, network-on-chip (NoC) has played a key role in 2D complex SoCs, thanks to its ability to efficiently manage data exchanges between many IPs. The fact that packet switching communication is well decoupled to computing IPs makes the extension of the interconnection capabilities to the third dimension easy and natural. The elementary die of the 3DNoC integrates four 3D routers to ensure vertical communication.

Redundancy and fault-tolerance are used in the 3DNoC circuit at both communication and processing levels. Using asynchronous logic for router implementation allows implementing robust 3D communication interfaces without any delay assumption, and makes dynamic voltage and frequency scaling (DVFS) for power optimization easier, relative to processing requirements and thermal constraints. Specific analysis and sizing tools developed by Mentor Graphics for power and thermal aspects were very helpful to architects in the 3D floor plan of the 3DNoC chip. More specifically, the Calibre 3DSTACK tool has been used for final sign-off verification of the 3D assembly of the two dice.

Several modules have been designed to ensure 3D signal integrity between the different tiers: micro-buffers, ESD protection, 3D link redundancy and data coding. A complete design-for-test methodology has been set up to perform a hierarchical test of each module, tier and stack before and after stacking based on the Mentor Graphics Tessent test tool suite including test pattern generation