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Canatu, a manufacturer of next generation transparent conductive films and touch sensors, announces a new generation of high optical transmittance CNB (Carbon NanoBud) transparent conductive films at Printed Electronics Europe in Berlin on April 28th, 2015.

Canatu’s Generation 6 CNB Film boasts significantly improved light transmittance. With zero haze, zero reflectance and high transmittance, CNB films have unrivalled optical performance and provide for high contrast displays with great outdoor readability.

“High grade optics is an innate property of CNB Films. Gen 6 brings the optics to perfection, expanding the scope where our films can be applied. We see ourselves bridging technology and design as our films enable almost complete design freedom. No other product on the market has the combined properties of CNB Films: extreme flexibility, excellent conductivity and high quality optical performance”, explains Dr. Erkki Soininen, VP Marketing and Sales at Canatu.

Canatu’s Generation 6 CNB Films have 95 percent optical transmittance at a sheet resistivity of 100 ohms/square and 97 percent at 150 ohms/square. Earlier this year, Canatu introduced a super-thin, flexible 23um CNB Flex Film, with a world’s lowest 1 percent change in sheet resistivity after 150 000 bends at 2mm radius.

With improved light transmittance vs resistivity characteristics, CNB Films can now be used in a wide range of touch applications, including larger displays and single-layer touch devices with totally invisible patterns. Combining the award-winning optics with extreme flexibility and thinness, Canatu’s films are especially suited for wearable and flexible devices such as next-generation foldable smart phones and tablets.

Canatu’s transparent conductive film portfolio consists of CNB Hi-Contrast Film optimized for flat projected capacitive touch devices, CNB Flex Film optimized for wearable, flexible and foldable touch-enabled electronics devices and CNB In-Mold Film optimized for formable 3D capacitive touch surfaces.

Canatu made significant investments in its production during 2014. Canatu is now entering mass manufacturing with several design wins to be announced later this year for consumer electronics, wearables, household appliances, and automotive use.

From smartphones and tablets to computer monitors and interactive TV screens, electronic displays are everywhere. As the demand for instant, constant communication grows, so too does the urgency for more convenient portable devices — especially devices, like computer displays, that can be easily rolled up and put away, rather than requiring a flat surface for storage and transportation.

A new Tel Aviv University study, published recently in Nature Nanotechnology, suggests that a novel DNA-peptide structure can be used to produce thin, transparent, and flexible screens. The research, conducted by Prof. Ehud Gazit and doctoral student Or Berger of the Department of Molecular Microbiology and Biotechnology at TAU’s Faculty of Life Sciences, in collaboration with Dr. Yuval Ebenstein and Prof. Fernando Patolsky of the School of Chemistry at TAU’s Faculty of Exact Sciences, harnesses bionanotechnology to emit a full range of colors in one pliable pixel layer — as opposed to the several rigid layers that constitute today’s screens.

“Our material is light, organic, and environmentally friendly,” said Prof. Gazit. “It is flexible, and a single layer emits the same range of light that requires several layers today. By using only one layer, you can minimize production costs dramatically, which will lead to lower prices for consumers as well.”

From genes to screens

For the purpose of the study, a part of Berger’s Ph.D. thesis, the researchers tested different combinations of peptides: short protein fragments, embedded with DNA elements which facilitate the self-assembly of a unique molecular architecture.

Peptides and DNA are two of the most basic building blocks of life. Each cell of every life form is composed of such building blocks. In the field of bionanotechnology, scientists utilize these building blocks to develop novel technologies with properties not available for inorganic materials such as plastic and metal.

“Our lab has been working on peptide nanotechnology for over a decade, but DNA nanotechnology is a distinct and fascinating field as well. When I started my doctoral studies, I wanted to try and converge the two approaches,” said Berger. “In this study, we focused on PNA – peptide nucleic acid, a synthetic hybrid molecule of peptides and DNA. We designed and synthesized different PNA sequences, and tried to build nano-metric architectures with them.”

Using methods such as electron microscopy and X-ray crystallography, the researchers discovered that three of the molecules they synthesized could self-assemble, in a few minutes, into ordered structures. The structures resembled the natural double-helix form of DNA, but also exhibited peptide characteristics. This resulted in a very unique molecular arrangement that reflects the duality of the new material.

“Once we discovered the DNA-like organization, we tested the ability of the structures to bind to DNA-specific fluorescent dyes,” said Berger. “To our surprise, the control sample, with no added dye, emitted the same fluorescence as the variable. This proved that the organic structure is itself naturally fluorescent.”

Over the rainbow

The structures were found to emit light in every color, as opposed to other fluorescent materials that shine only in one specific color. Moreover, light emission was observed also in response to electric voltage — which make it a perfect candidate for opto-electronic devices like display screens.

Borrowing a trick from nature, engineers from the University of California at Berkeley have created an incredibly thin, chameleon-like material that can be made to change color — on demand — by simply applying a minute amount of force.

This new material-of-many-colors offers intriguing possibilities for an entirely new class of display technologies, color-shifting camouflage, and sensors that can detect otherwise imperceptible defects in buildings, bridges, and aircraft.

“This is the first time anybody has made a flexible chameleon-like skin that can change color simply by flexing it,” said Connie J. Chang-Hasnain, a member of the Berkeley team and co-author on a paper published today in Optica, The Optical Society’s (OSA) new high-impact journal.

By precisely etching tiny features — smaller than a wavelength of light — onto a silicon film one thousand times thinner than a human hair, the researchers were able to select the range of colors the material would reflect, depending on how it was flexed and bent.

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A Material that’s a Horse of a Different Color

The colors we typically see in paints, fabrics, and other natural substances occur when white, broad spectrum light strikes their surfaces. The unique chemical composition of each surface then absorbs various bands, or wavelengths of light. Those that aren’t absorbed are reflected back, with shorter wavelengths giving objects a blue hue and longer wavelengths appearing redder and the entire rainbow of possible combinations in between. Changing the color of a surface, such as the leaves on the trees in autumn, requires a change in chemical make-up.

Recently, engineers and scientists have been exploring another approach, one that would create designer colors without the use of chemical dyes and pigments. Rather than controlling the chemical composition of a material, it’s possible to control the surface features on the tiniest of scales so they interact and reflect particular wavelengths of light. This type of “structural color” is much less common in nature, but is used by some butterflies and beetles to create a particularly iridescent display of color.

Controlling light with structures rather than traditional optics is not new. In astronomy, for example, evenly spaced slits known as diffraction gratings are routinely used to direct light and spread it into its component colors. Efforts to control color with this technique, however, have proved impractical because the optical losses are simply too great.

The authors of the Optica paper applied a similar principle, though with a radically different design, to achieve the color control they were looking for. In place of slits cut into a film they instead etched rows of ridges onto a single, thin layer of silicon. Rather than spreading the light into a complete rainbow, however, these ridges — or bars — reflect a very specific wavelength of light. By “tuning” the spaces between the bars, it’s possible to select the specific color to be reflected. Unlike the slits in a diffraction grating, however, the silicon bars were extremely efficient and readily reflected the frequency of light they were tuned to.

Flexibility Is the Key to Control

Since the spacing, or period, of the bars is the key to controlling the color they reflect, the researchers realized it would be possible to subtly shift the period — and therefore the color — by flexing or bending the material.

“If you have a surface with very precise structures, spaced so they can interact with a specific wavelength of light, you can change its properties and how it interacts with light by changing its dimensions,” said Chang-Hasnain.

Earlier efforts to develop a flexible, color shifting surface fell short on a number of fronts. Metallic surfaces, which are easy to etch, were inefficient, reflecting only a portion of the light they received. Other surfaces were too thick, limiting their applications, or too rigid, preventing them from being flexed with sufficient control.

The Berkeley researchers were able to overcome both these hurdles by forming their grating bars using a semiconductor layer of silicon approximately 120 nanometers thick. Its flexibility was imparted by embedding the silicon bars into a flexible layer of silicone. As the silicone was bent or flexed, the period of the grating spacings responded in kind.

The semiconductor material also allowed the team to create a skin that was incredibly thin, perfectly flat, and easy to manufacture with the desired surface properties. This produces materials that reflect precise and very pure colors and that are highly efficient, reflecting up to 83 percent of the incoming light.

Their initial design, subjected to a change in period of a mere 25 nanometers, created brilliant colors that could be shifted from green to yellow, orange, and red – across a 39-nanometer range of wavelengths. Future designs, the researchers believe, could cover a wider range of colors and reflect light with even greater efficiency.

Chameleon Skin with Multiple Applications

For this demonstration, the researchers created a one-centimeter square layer of color-shifting silicon. Future developments would be needed to create a material large enough for commercial applications.

“The next step is to make this larger-scale and there are facilities already that could do so,” said Chang-Hasnain. “At that point, we hope to be able to find applications in entertainment, security, and monitoring.”

For consumers, this chameleon material could be used in a new class of display technologies, adding brilliant color presentations to outdoor entertainment venues. It also may be possible to create an active camouflage on the exterior of vehicles that would change color to better match the surrounding environment.

More day-to-day applications could include sensors that would change color to indicate that structural fatigue was stressing critical components on bridges, buildings, or the wings of airplanes.

“This is the first time anyone has achieved such a broad range of color on a one-layer, thin and flexible surface,” concluded Change-Hasnain. “I think it’s extremely cool.”

Organic light emitting diodes (OLEDs), which are made from carbon-containing materials, have the potential to revolutionize future display technologies, making low-power displays so thin they’ll wrap or fold around other structures, for instance.

Conventional LCD displays must be backlit by either fluorescent light bulbs or conventional LEDs whereas OLEDs don’t require back lighting. An even greater technological breakthrough will be OLED-based laser diodes, and researchers have long dreamed of building organic lasers, but they have been hindered by the organic materials’ tendency to operate inefficiently at the high currents required for lasing.

Now a new study from a team of researchers in California and Japan shows that OLEDs made with finely patterned structures can produce bright, low-power light sources, a key step toward making organic lasers. The results are reported in a paper appearing this week on the cover of the journal Applied Physics Letters, from AIP Publishing.

The key finding, the researchers say, is to confine charge transport and recombination to nanoscale areas, which extends electroluminescent efficiency roll off the current density at which the efficiency of the OLEDs dramatically decreases — by almost two orders of magnitude. The new device structures do this by suppressing heating and preventing charge recombination.

“An important effect of suppressing roll-off is an increase in the efficiency of devices at high brightness,” said Chihaya Adachi of Kyushu University, who is a co-author of the paper. “This results in lower power to obtain the same brightness.”

“For years scientists working in organic semiconductors have dreamed of making electrically-driven organic lasers,” said Thuc-Quyen Nguyen of the University of California, Santa Barbara, another co-author. “Lasers operate in extreme conditions with electric currents that are significantly higher than those used in common displays and lighting. At these high currents, energy loss processes become stronger and make lasing difficult.

“We see this work, which reduces some loss processes, as one step on the road toward realizing organic lasers,” Nguyen added.

How OLEDs Work

OLEDs operate through the interaction of electrons and holes. “As a simple visualization,” Adachi said, “one can think of an organic semiconductor as a subway train with someone sitting in every seat. The seats represent molecules and the people represent energetic particles, i.e., electrons. When people board the train from one end, they have extra energy and want to go to the relaxed state of sitting. As people board, some of the seated people rise and exit the train at the other end leaving empty seats, or ‘holes,’ for the standing people to fill. When a standing person sits, the person goes to a relaxed state and releases energy. In the case of OLEDs, the person releases the energy as light.”

Production of OLED-based lasers requires current densities of thousands of amperes per square centimeter (kA/cm2), but until now, current densities have been limited by heating. “At high current densities, brightness is limited by annihilation processes,” Adachi said. “Think of large numbers of people on the train colliding into each other and losing energy in ways other than by sitting and releasing light.”

In previous work, Adachi and colleagues showed OLED performance at current densities over 1 kA/cm2 but without the necessary efficiency required for lasers and bright lighting. In their current paper, they show that the efficiency problem can be solved by using electron-beam lithography to produce finely-patterned OLED structures. The small device area supports charge density injection of 2.8 kA/cm2 while maintaining 100 times higher luminescent efficiency than previously observed. “In our device structure, we have effectively confined the entrance and exit to the middle of the train. People diffuse to the two less crowded ends of the train and reduce collisions and annihilation.”

Cypress Semiconductor Corp., in conjunction with its strategic partner IDEX ASA, today introduced a fingerprint reader solution designed to bring reliable, easy-to-use user authentication to smartphones, tablets, wearables and other mobile devices. The TrueTouch Fingerprint Reader uses proprietary sensing circuitry and a unique touch sensor design to provide best-in-class fingerprint image quality and pattern matching accuracy—improving security and delivering a superior user experience. The flexible solution enables designers to create custom home buttons with specialized shapes and sizes or to integrate the sensor into any mobile device’s industrial design or home button.

Consumers have increasingly embraced fingerprint readers as an alternative to keying in complex usernames, PINs and passwords. Mobile device OEMs and companies that sell via the Internet have gravitated toward the technology as the most secure way to validate a user’s identity. Demand for fingerprint readers in mobile devices is forecast to grow at a compound annual rate of 47 percent through 2019, reaching annual shipments of more than 700 million units.

Cypress will showcase its TrueTouch Fingerprint Reader, along with its extensive portfolio of capacitive touchscreen and touch-sensing solutions, at Mobile World Congress 2015 from March 2-5 in Hall 2, Stand 2C26MR at Fira Gran Via in Barcelona.

TrueTouch Fingerprint Reader block diagram

“The barriers to entry are considerable in the emerging market for fingerprint readers, in part because of the highly specialized IP and complete solution that is required to compete,” said T.J. Rodgers, President and CEO of Cypress. “Our relationship with IDEX will enable us to provide our top-tier mobile customers with a globally deployable fingerprint sensing solution, including a sensor, Android drivers and a software stack. With our industry-leading CapSense capacitive touch-sensing controllers, and our TrueTouch touchscreen solutions, Cypress will have an unmatched portfolio for mobile user interfaces.”

“We are extremely pleased with the performance of our new generation touch sensor developed in record time through our partnership with Cypress,” said Dr. Hemant Mardia, CEO of IDEX ASA. “The combination of IDEX’s breakthrough imaging performance, matching algorithm and patented sensor IP with Cypress’s award-winning programmable system-on-chip technology delivers best in class fingerprint matching. This product has been designed based on fundamentally new technology to meet our OEM customers’ demands for usability and security strength from small touch sensors.”

By CHOWDARY YANAMADALA, Senior Vice President of Business Development, ChaoLogix, Gainesville, FL 

Data is ubiquitous today. It is generated, exchanged and consumed at unprecedented rates.

According to Gartner, Internet of Things connected devices (excluding PCs, tablets and smart phones) will grow to 26 billion devices worldwide by 2020—a 30-fold increase from 2009. Sales of these devices will add $1.9 trillion in economic value globally.

Indeed, one of the major benefits of the Internet of Things movement is the connectivity and accessibility of data; however, this also raises concerns about securely managing that data.

Managing data security in hardware

Data security involves essential steps of authentication and encryption. We need to authenticate data generation and data collection sources, and we need to preserve the privacy of the data.

The Internet of Things comprises a variety of components: hardware, embedded software and services associated with the “things.” Data security is needed at each level.

Hardware security is generally implemented in the chips that make up the “things.” The mathematical security of authentication and encryption algorithms is less of a concern because this is not new. The industry has addressed these concerns for several years.

Nonetheless, hackers can exploit implementation flaws in these chips. Side channel attacks (SCAs) are a major threat to data security within integrated circuits (ICs) that are used to hold sensitive data, such as identifying information and secret keys needed for authentication or encryption algorithms. Specific SCAs include differential power analysis (DPA) and differential electro magnetic analysis (DEMA).

There are many published and unpublished attacks on the security of chips deployed in the market, and SCA threats are rapidly evolving, increasing in potency and the ease of mounting the attacks.

These emerging threats render defensive techniques adopted by the IC manufacturers less potent over time, igniting a race between defensive and offensive (threat) techniques. For example, chips that deploy defensive techniques deemed sufficient in 2012 may be less effective in 2014 due to emerging threats. Once these devices are deployed, they become vulnerable to new threats.

Another challenge IC manufacturers face is the complexity of defensive techniques. Often times, defensive techniques that are algorithm or protocol specific are layered to address multiple targeted threats.

This “Band-Aid” approach is tedious and becomes unwieldy to manage. The industry must remember that leaving hardware vulnerable to SCA threats can significantly weaken data security. This vulnerability may manifest itself in the form of revenue loss (counterfeits of consumables), loss of privacy (compromised identification information), breach of authentication (rogue devices in the closed network) and more.

How to increase the permanence of security

A simplified way to look at the SCA problem is as a signal to noise issue. In this case, signal means sensitive data leaked through power signature. Noise is the ambient or manufactured noise added to the system to obfuscate the signal from being extracted from power signature.

Many defensive measures today concentrate on increasing noise in the system to obfuscate the signal. The challenge with this approach is that emerging statis- tical techniques are becoming adept at separating the signal from the noise, thereby decreasing the potency of the deployed defensive techniques.

One way to effectively deal with this problem is to ”weave security into the fabric of design.” SCA threats can be addressed at the source rather than addressing the symptoms. What if we can make the power signature agnostic of the data processed? What if we can build security into the building blocks of design? That would make the security more permanent and simplify its implementation.

A simplified approach of weaving security into the fabric of design involves leveraging a secure standard cell library that is hardened against SCA. Such a library would use analog design techniques to tackle the problem of SCA at the source, diminishing the SCA signal to make it difficult to extract from the power signature.

Leveraging standard cells should be simple since they are the basic building blocks of digital design. As an industry, we cannot afford to bypass these critical steps to defend our data.

Design features that contributed most to the improved performance include increased rotational speed, integrated rotor sleeves, and increased purge injection temperature.

BY MIKE BOGER, Edwards Vacuum, Tokyo, Japan

The use of high-k dielectric films deposited through atomic layer deposition, primarily in batch furnaces, has intensified, particularly in the manufacture of memory devices and high-k metal gates (HKMG) in logic devices. ALD uses a sequential purge and injection of the precursor gases to generate slow, but accurate growth of the films one atomic layer at a time. One of the precusors is typically a metal organic compound from a liquid source, commonly zirconium or hafnium-containing materials, followed by ozone to create the high-k film.

Wafers are usually processed in a furnace with batch sizes of 200 or more wafers. Reliability of the vacuum system is imperative to prevent contamination and consequent scrapping of the wafers. Unexpected failures can cause significant loss of work in process and process downtime. For example, if the vacuum pump seizes suddenly due to internal contamination by process by-products, the pressure in the pipe between the vacuum and furnaces rises, and there is a risk that powder deposited in the pipe will flow back into the furnace. This powder can not only contaminate wafers in the furnace, but also force a time-consuming clean-up that may remove the furnace from operation for a day or more.

The challenge

The mean-time-between-service (MTBS) for a vacuum pump used in semiconductor manufacturing varies greatly depending on the particular process it supports and the design of the pump. For the ALD processes considered here most failures caused process by-products can be grouped into four categories.

  • Corrosion – Attack on the metal components of the pump results in the opening of clearances leading to loss of base vacuum. Depending on the location of corrosion, the oxidation of the metal may actually generate powder that can cause seizure of rotating elements.
  • Plating – The deposition of metal compounds on the surface of internal components fouls internal mechanism clearances, causing the pump to seize.
  • Powder ingestion – Powder that enters the pump can jam rotating elements, leading to seizure.
  • Condensation – Compounds in the pumped gas stream transition from a gaseous to a solid phase within the pump, depositing on internal surfaces and eventually leading to loss of clearance and seizure.

Monitoring of pump operating conditions, such as input power, current, and running temperature, can provide an indication of the health of the pump. Events that lead to failure are generally gradual in nature. Advance notice periods can be measured in days. However, failures of vacuum pumps on high-k ALD processes often happen suddenly with little to no indication of distress prior to seizure.

A typical example of a vacuum pump used on a high-k ALD process is shown in FIGURE 1. This pump was used in a full production environment and consisted of a 1,800 m3h-1 mechanical booster mounted above a 160 m3h-1 dry pump. In this case, the pump exhibited a strong spike in running power, approximately 20 times normal, and was immediately removed for inspection. Significant deposition is evident in the booster (Fig. 1 left) and also in the last stage of the dry pump (Fig. 1 right). Evidence of the loss of clearance that caused the spike in input power is observed as a shiny area on the rotor lobe. In operation this pump was exposed to TEMAH (hafnium-containing liquid precursor), TMA (aluminum-containing liquid precursor), and ozone for producing HfO2 and TMA Al2O3. It was exchanged after 1,200 hours of use.

ALD 1-A ALD 1-B

 

FIGURE 1. A picture of a disassembled pump after 1,200 hours of use on a high-k ALD process showing the deposition in the booster (left) and loss of clearance in the last stage of the dry pump (right). 

FIGURE 2 provides another example of a pump that was removed due to detection of a spike in input current. In this case, the booster, second stage, and final stage of the pump are shown. Although the process was nominally the same (deposition of HfO2 and Al2O3), the deposition pattern is different. In this case, the booster and early stages of the dry pump show signs of a thin coating of a material that exhibits a green iridescent sheen. The final stage of the pump has a brown powder accumulation, but of a lighter color than that shown in Fig. 1.

FIGURE 2. Pictures of a disassembled pump that was removed for inspection after only 457 hours due to a large current spike detected during operation. In order, the pictures show the booster, second stage of the dry pump, and the final stage of the dry pump.

FIGURE 2. Pictures of a disassembled pump that was removed for inspection after only 457 hours due to a large current spike detected during operation. In order, the pictures show the booster, second stage of the dry pump, and the final stage of the dry pump.

In both of the examples shown in Figs. 1 and 2, the service interval of the pump was short and below the user’s expectations. In these cases, which are representative of all the pumps used on this process, the user was forced to exchange pumps frequently to minimize the risk of wafer loss. Other customers had similar experiences. TABLE 1 lists the films deposited and the preventative maintenance service intervals implemented by four customers. Analysis of serviced pumps suggested that processes depositing zirconium oxide were more challenging for the pump.

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Analysis

To better understand the reliability improvement challenge, a sample of the deposited material from a failed pump was analyzed. The results of the analysis, shown in FIGURE 3, revealed deposits rich in carbon and metal oxides, consistent with metal-organic precursors. The rate of oxide deposition appeared to be higher than that which would occur through pure ALD mechanisms, suggesting some chemical vapor deposition (CVD) or decomposition of the gases being pumped.

FIGURE 3. Analysis of the deposition within a failed pump showing hafnium, oxygen, and carbon components.

FIGURE 3. Analysis of the deposition within a failed pump showing hafnium, oxygen, and carbon components.

A survey of literature [1], [2], [3], [4] revealed that the typical reactants used in high-k ALD can react at high pressure and at low temperature without the need for external energetic activation. This suggests that even if there were no CVD or decomposition of gases within the pump, ALD-like films can still be deposited on the internal surfaces of the pump.

A simulation of the vapor pressure of TEMAH (one of the precursors used) within the pump was conducted, assuming a mass flow rate of 0.2 mg min−1 for TEMAH. The simulation results were compared to the measured vapor pressure of TEMAH to determine if there was any risk of TEMAH condensing within the vacuum pump. The results, shown in FIGURE 4, suggest that there are sufficient safety margins in the actual conditions. The TEMAH will stay in vapor form while it travels through the pump, even if the actual flow varied by an order of magnitude from that assumed. Moreover, the pump temperature could be reduced substantially without risk of condensing TEMAH within the pump.

FIGURE 4. Vapor pressure of TEMAH (0.2 mg/min with 14 slm of nitrogen) and simulated vapor pressure of TEMAH in the dry pump, inlet to outlet.

FIGURE 4. Vapor pressure of TEMAH (0.2 mg/min with 14 slm of nitrogen) and simulated vapor pressure of TEMAH in the dry pump, inlet to outlet.

A number of pumps were inspected, a large majority of which were pumps exchanged prior to seizure. Unfortunately, although powder was evident in the final stages of all pumps, not all pumps had powders of the same color. Moreover, as seen in the middle photograph of Fig. 2, some pumps and boosters were relatively clean exhibiting just a green sheen of deposition.

None of the observations, other than powder in the final stage of the dry pump, were consistently repeatable, suggesting that factors upstream of the pump were also contributing to short service intervals. Powder loading varied between pumps and within the pumps, although the heaviest deposition was always located in the final stages of the dry pump. It is normal for the most deposition to occur near the exhaust of the pump because of the generally increased temperature of the exhaust gas and the increase in vapor pressure of the materials being pumped.

A diagram of the dry pump stages from inlet to outlet is shown in FIGURE 5, where the sleeves are also shown. Consistently, the final stage shaft sleeve, which is located between the 4th and 5th stage of the pump, was the weakest link in the design. Deposition would collect on the sleeve’s surface. Resulting friction between the sleeve and the stator would cause the components to heat, expand, and finally seize the pump.

FIGURE 5. Schematic of the dry pump mechanism showing inlet (1st stage) to outlet (5th stage). Rotor sleeves are shown in green.

FIGURE 5. Schematic of the dry pump mechanism showing inlet (1st stage) to outlet (5th stage). Rotor sleeves are shown in green.

FIGURE 6 shows the sleeves from between three stages of a pump exchanged for service. Another example is shown in the right side picture of Fig. 1. The sleeves are steel with a PTFE coating, giving them a green color. Evidence of the deposition is clear in the shaft sleeves on the right side of the picture.

FIGURE 6. Picture of sleeves in an exchanged pump showing deposition on the outer surfaces.

FIGURE 6. Picture of sleeves in an exchanged pump showing deposition on the outer surfaces.

Extending pump service intervals

Inconsistencies in powder deposition that suggested variations in upstream conditions were ultimately traced to condensation in the gas lines to the process chamber. The amount of condensed liquid and the length of the flow step in the ALD cycle affected the amount of deposition. When the user took care to avoid condensation, a much more consistent pattern of deposition was observed within the pump.

For any particular dry pump, the two most convenient elements that can be adjusted are the nitrogen purge and the temperature of the pump. Adding purge, or changing the location of the purge, can affect the partial pressure of the gases being pumped. Purge can also affect the temperature of the gas being pumped. In this case the purge flow was already 76 slm and further increase could have affected the downstream gas abatement device.

Experiments to extend the MTBS focused on the pump running temperature. Temperature changes within the pump can dramatically affect the propensity of the pumped gases to condense on the internal surfaces of the pump as well as the rate of reactions of any gases being pumped. However, varying the pump temperature from 140°C to nearly 180°C made any appreciable change to the service interval.

Finally, two pumps with designs that differed significantly from the original pump were evaluated. Additionally, new pump A provided significantly greater capacity at higher inlet pressures than new pump B, at the expense of greater power consumption. The results are shown in TABLE 2.

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New Pump A was initially installed with a temperature set point of 130°C. It was removed after six months for inspection prior to failure. New Pump B was tested with a temperature set point of 110°C. It was removed after six months prior to failure. A comparison of the internal condition of the Original Pump and New Pump B is shown in FIGURE 7.

FIGURE 7. Pictures comparing the third stage of the original pump and New Pump B showing the different deposition patterns.

FIGURE 7. Pictures comparing the third stage of the original pump and New Pump B showing the different deposition patterns.

Four differences in the new pump design are believed to have contributed to improved reliability:

  • 180% increase in rotational speed (180%) resulting in less residence time of the pumped gases.
  • Reduced operating temperature. Although many semiconductor processes benefit from a hot pump, this ALD process does not.
  • No rotor sleeves. The rotor sleeve in the new pumps was integrated with the rotor element itself. This not only removed the necessity for a coating, but appeared to strengthen the mechanism.
  • Heated purge. The purge in the new pumps is warmed to within 95% of the stator temperature to prevent cooling effects and reduce the chance of spontaneous condensation of gases.

Subsequent experience with a large number of pumps and customers has confirmed the advantages provided by the new pump design. New pump B is the recommended pump for this application with fixed service intervals varying between 4 and 6 months depending on the specific characteristics of the process supported.

Conclusions

Deposition of high-k materials using ALD is a widely used technique for today’s transistor and memory structures. At early introduction of the process in high volume manufacturing, pump reliability became a key concern. Careful analysis and cooperation with customers resulted in extending the service interval of the pumps from one to up to six months, an achievement that significantly reduced operating expenses and production losses due to wafer contamination and equipment downtime caused by unexpected pump failures. Analysis of the pump condition and test results showed that, more than temperature or purge, a different pump design provided the greatest improvement in service intervals. Design features that contributed most to the improved performance include increased rotational speed, integrated rotor sleeves, and increased purge injection temperature.

References

1. J. M. et al., “Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics hf-based high-k materials,” ECSTrans., p. 59, 2007.
2. X. L. et al., “Ald of hafnium oxide thin films from tetrakis (ethylmethylamino) hafnium and ozone,” J. of ECS, vol. 152, 2005.
3. H. Furuya, “Formation of metal oxide film,” Sep 2008, patent application: US20080226820 A1.
4. Y. S. et al., “Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone,” J. Vac. Sci. Tech. A, vol. 22, 2004.

At the heart of lasers, displays and other light-emitting devices lies the emission of photons. Electrically controlled modulation of this emission is of great importance in applications such as optical communication, sensors and displays. Moreover, electrical control of the light emission pathways opens up the possibility of novel types of nano-photonics devices, based on active plasmonics.

Scientists from ICFO, MIT, CNRS, CNISM and Graphenea have now demonstrated active, in-situ electrical control of the energy flow from erbium ions into photons and plasmons. The experiment was implemented by placing the erbium emitters a few tens of nanometers away from the graphene sheet, whose carrier density (Fermi energy) is electrically controlled. Partially funded by the EC Graphene Flagship, this study entitled “Electrical control of optical emitter relaxation pathways enabled by graphene”, has been published in Nature Physics.

Erbium ions are essentially used for optical amplifiers and emit light at a wavelength of 1.5 micrometers, the so called third telecom window. This is an important window for optical telecommunications because there is very little energy loss in this range, and thus highly efficient information transmission.

The study has shown that the energy flow from erbium into photons or plasmons can be controlled simply by applying a small electrical voltage. The plasmons in graphene are rather unique, as they are very strongly confined, with a plasmon wavelength that is two orders of magnitude smaller than the wavelength of the emitted photons. As the Fermi energy of the graphene sheet was gradually increased, the erbium emitters went from exciting electrons in the graphene sheet, to emitting photons or plasmons. The experiments revealed the long-sought-after graphene plasmons at near-infrared frequencies, relevant for these telecommunications applications. In addition, the strong concentration of optical energy offers new possibilities for data storage and manipulation through active plasmonic networks.

Frank Koppens commented: “This work shows that electrical control of light at the nanometer scale is possible and efficient, thanks to the optoelectronics properties of graphene.”

With its high electrical conductivity and optical transparency, indium tin oxide is one of the most widely used materials for touchscreens, plasma displays, and flexible electronics. But its rapidly escalating price has forced the electronics industry to search for other alternatives.

One potential and more cost-effective alternative is a film made with silver nanowires–wires so extremely thin that they are one-dimensional–embedded in flexible polymers. Like indium tin oxide, this material is transparent and conductive. But development has stalled because scientists lack a fundamental understanding of its mechanical properties.

Now Horacio Espinosa, the James N. and Nancy J. Farley Professor in Manufacturing and Entrepreneurship at Northwestern University’s McCormick School of Engineering, has led research that expands the understanding of silver nanowires’ behavior in electronics.

Espinosa and his team investigated the material’s cyclic loading, which is an important part of fatigue analysis because it shows how the material reacts to fluctuating loads of stress.

“Cyclic loading is an important material behavior that must be investigated for realizing the potential applications of using silver nanowires in electronics,” Espinosa said. “Knowledge of such behavior allows designers to understand how these conductive films fail and how to improve their durability.”

By varying the tension on silver nanowires thinner than 120 nanometers and monitoring their deformation with electron microscopy, the research team characterized the cyclic mechanical behavior. They found that permanent deformation was partially recoverable in the studied nanowires, meaning that some of the material’s defects actually self-healed and disappeared upon cyclic loading. These results indicate that silver nanowires could potentially withstand strong cyclic loads for long periods of time, which is a key attribute needed for flexible electronics.

“These silver nanowires show mechanical properties that are quite unexpected,” Espinosa said. “We had to develop new experimental techniques to be able to measure this novel material property.”

The findings were recently featured on the cover of the journal Nano Letters. Other Northwestern coauthors on the paper are Rodrigo Bernal, a recently graduated PhD student in Espinosa’s lab, and Jiaxing Huang, associate professor of materials science and engineering in McCormick.

“The next step is to understand how this recovery influences the behavior of these materials when they are flexed millions of times,” said Bernal, first author of the paper.

University of Wisconsin-Madison materials engineers have made a significant leap toward creating higher-performance electronics with improved battery life — and the ability to flex and stretch.

Led by materials science Associate Professor Michael Arnold and Professor Padma Gopalan, the team has reported the highest-performing carbon nanotube transistors ever demonstrated. In addition to paving the way for improved consumer electronics, this technology could also have specific uses in industrial and military applications.

In a paper published recently in the journal ACS Nano, Arnold, Gopalan and their students reported transistors with an on-off ratio that’s 1,000 times better and a conductance that’s 100 times better than previous state-of-the-art carbon nanotube transistors.

“Carbon nanotubes are very strong and very flexible, so they could also be used to make flexible displays and electronics that can stretch and bend, allowing you to integrate electronics into new places like clothing,” says Arnold. “The advance enables new types of electronics that aren’t possible with the more brittle materials manufacturers are currently using.”

Carbon nanotubes are single atomic sheets of carbon rolled up into a tube. As some of the best electrical conductors ever discovered, carbon nanotubes have long been recognized as a promising material for next-generation transistors, which are semiconductor devices that can act like an on-off switch for current or amplify current. This forms the foundation of an electronic device.

However, researchers have struggled to isolate purely semiconducting carbon nanotubes, which are crucial, because metallic nanotube impurities act like copper wires and “short” the device. Researchers have also struggled to control the placement and alignment of nanotubes. Until now, these two challenges have limited the development of high-performance carbon nanotube transistors.

Building on more than two decades of carbon nanotube research in the field, the UW-Madison team drew on cutting-edge technologies that use polymers to selectively sort out the semiconducting nanotubes, achieving a solution of ultra-high-purity semiconducting carbon nanotubes.

Previous techniques to align the nanotubes resulted in less-than-desirable packing density, or how close the nanotubes are to one another when they are assembled in a film. However, the UW-Madison researchers pioneered a new technique, called floating evaporative self-assembly, or FESA, which they described earlier in 2014 in the ACS journal Langmuir. In that technique, researchers exploited a self-assembly phenomenon triggered by rapidly evaporating a carbon nanotube solution.

The team’s most recent advance also brings the field closer to realizing carbon nanotube transistors as a feasible replacement for silicon transistors in computer chips and in high-frequency communication devices, which are rapidly approaching their physical scaling and performance limits.

“This is not an incremental improvement in performance,” Arnold says. “With these results, we’ve really made a leap in carbon nanotube transistors. Our carbon nanotube transistors are an order of magnitude better in conductance than the best thin film transistor technologies currently being used commercially while still switching on and off like a transistor is supposed to function.”

The researchers have patented their technology through the Wisconsin Alumni Research Foundation and have begun working with companies to accelerate the technology transfer to industry.