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Dialog Semiconductor plc (XETRA:DLG), a provider of highly integrated power management, AC/DC power conversion, solid state lighting (SSL) and Bluetooth(R) low energy technology, today announced the appointment of Mary Chan to the company’s Board of Directors, effective December 1, 2016.

“Mary’s significant international experience in the wireless communications sector will perfectly complement the existing rich mix of skills and perspectives on our Board,” said Rich Beyer, Chairman of the Board, Dialog Semiconductor. “Her particular insight into the ways connectivity and the Internet of Things (IoT) are driving change across multiple industries by enabling the delivery of cloud-based services on connected mobile platforms will be especially valuable.”

Ms. Chan’s career has spanned executive leadership roles at some of the world’s most successful international firms, including AT&T, Alcatel Lucent, Dell Inc. and General Motors Corporation (GM). Most recently at GM, Ms. Chan served between 2012 and 2015 as President, Global Connected Consumers & OnStar Service USA. In this role, Ms. Chan headed the organization responsible for the development of GM’s Global infotainment product and launching 4G LTE connectivity across GM’s global vehicle brands, successfully implementing new business models to improve the connected car and infotainment experience. At Dell, between 2009 and 2012, Ms. Chan led the company’s Enterprise Mobility Solutions and Services business in the USA. Prior to this, at Alcatel-Lucent, Ms. Chan served as Executive Vice President of the company’s US 4G LTE Wireless Networks business.

Ms. Chan currently serves as an Independent Director on the Board of SBA Communications Corporation, a leading operator and owner of wireless communications infrastructure across North, Central and South America. In addition, Ms. Chan is also currently the Managing Partner at VectoIQ which serves a number of companies in the area of smart transportation. Previously she also served on the Boards of the Mobile Marketing Association and CTIA – The Wireless Association. She holds both Bachelor and Master of Science degrees in Electrical Engineering from Columbia University.

Today, at the OLEDs World Summit in San Diego, Kateeva, a OLED production equipment developer, reported that its YIELDjet FLEX system has earned a commanding lead in the key organic layer deposition step in the OLED Thin Film Encapsulation (TFE) market. Since the novel inkjet printing solution debuted in manufacturing in 2014, the company has secured the vast majority of available TFE orders. Customers include the world’s largest flat panel display manufacturers located in three key Asia regions.

TFE is a critical step in the flexible OLED manufacturing process. It gives thinness and flexibility to the OLED device, and helps reduce overall manufacturing costs. OLEDs utilizing TFE are revolutionizing the consumer electronics industry by enabling exciting new mobile products that are bendable, foldable and even roll-able. Kateeva’s YIELDjet FLEX system helped catalyze the transition to the new display technology by solving key technical challenges that previously made mass-producing OLEDs with TFE, including flexible OLEDs, economically unviable.

Kateeva CEO Alain Harrus attributed the company’s market momentum to the swift migration to flexible OLED mass production by display leaders. “That fast manufacturing transition speaks to the spirited innovation within the display industry, where leaders are testing the limits of physics, chemistry and engineering ingenuity, and making substantial R&D investments to commercialize revolutionary displays. We’re privileged to partner with these trail-blazing companies, and pleased that our YIELDjet technology is enabling their processes.”

The YIELDjet FLEX tool is the first system to emerge from Kateeva’s YIELDjet platform. The YIELDjet platform is Kateeva’s foundational technology. Introduced in late 2013, it was the first inkjet printing manufacturing equipment platform engineered specifically for OLED mass-production. OLED technology was already transforming rigid smart phone displays with vibrant color and extraordinary image quality. With new high-yield mass-production equipment, OLED technology would enable the next leap—freedom from glass substrates—a breakthrough that would unleash tantalizing new flexible products.

Kateeva’s YIELDjet FLEX system has enabled a rapid transition from glass encapsulation to TFE in new OLED production lines. The company’s precision deposition solution for the TFE organic layer deposition process is fast, offers good planarization, few particle defects, high material utilization, good scalability, and easy maintenance. These advantages deliver dramatically higher TFE yields and lower mass-production costs, making the system a powerful alternative to vacuum evaporation technologies which had reached their technical limits.

Today, barely two years after its debut, Kateeva’s YIELDjet FLEX tool is the undisputed leader in the industry.

At the OLEDs World Summit, Kateeva technologist, Neetu Chopra, Ph.D. will reveal how YIELDjet technology will soon be applied to mass-produce the RGB OLED layer to enable affordable OLED TVs. Dr. Chopra will present her talk today at 4:35pm.

SEMI, a supplier of independent semiconductor market research, today announced SEMI FabView, a mobile-friendly, interactive version of its popular World Fab Forecast quarterly report for electronic supply chain players and analysts. The new product was announced during the press conference at SEMICON Taiwan, where 43,000 industry professionals are convening this week. SEMI FabView tracks spending and capacities of over 1,100 facilities, including over 60 future facilities, across industry segments from Analog, Power, Logic, MPU, Memory, and Foundry to MEMS and LED fabs.

semi fabview

SEMI FabView features high-level fab data such as capacity, technology nodes, and equipment spending, with other device manufacturing insights such as fabs by region, wafer size, product type and construction status. This new online platform enables anytime access on the changes taking place in fab construction and expansion, production volume, device types, and more. The ability to quickly access the latest data for quarterly business reviews or earnings calls, or to validate an investment decision, is a key feature of this new product.

“SEMI FabView, an online platform, provides SEMI members and customers access to the industry benchmark World Fab Forecast database information in an entirely new way,” said Dan Tracy, senior director of SEMI Industry Research & Statistics for SEMI. “By adding the interactive elements of SEMI FabView, subscribers now have on-the-go real-time access to expert analysis that can be implemented in their models or forecasts.”

SEMI FabView users can:

  • view forecast for equipment and construction spending, capacity changes, and fab status from new plans to closures
  • organize data views by filtering data and accessing analyst commentary for each company and fab to see the latest SEMI forecast
  • access forecast data by company, geographical region, wafer size, technology geometry and specific stages of fab life cycle ─ from announced and planned new fabs to fabs that are in transition (e.g., when a cleanroom is converting to a larger wafer size or a different product type)

SEMI FabView is available for a product demo; contact [email protected]. Learn more about SEMI FabView here: www.semi.org/en/semi-fabview

The global market for gallium nitride (GaN) semiconductor devices is largely consolidated, with the top four companies commanding a share of over 65% of the overall market in 2015, states Transparency Market Research (TMR) in a new report. The dominant company among these four top vendors, Efficient Power Conversion Corporation, accounted for a 19.2% share of the global market in the said year. The other three topmost companies of the global market, which collectively enjoyed a considerably large share in the overall global market in the said year, are NXP Semiconductors N.V., GaN Systems Inc., and Cree Inc.

Looking at the on-going research and development activities undertaken in the market, attempts made to eliminate issues related to reliability of GaN semiconductors is expected to be an important area of focus of key vendors in the near future. Transparency Market Research states that the global GaN semiconductor devices market will expand at a high 17.0% CAGR over the period between 2016 and 2024. With such exponential growth, the market, which had a valuation of $870.9 mn in 2015, is projected to rise to $3,438.4 mn by 2024. Of the key end-use industries utilizing GaN semiconductors, the aerospace and defense sector dominates, accounting for a share of over 42% of the global market in 2015.

Rising set of applications and focus on R&D to boost demand in North America and Europe

North America and Europe are presently the dominant regional markets for GaN semiconductor devices and are expected to retain dominance over the next few years as well. The rising focus of the Europe Space Agency (ESA) on the increased usage of GaN semiconductors across space projects and the use of GaN-based transistors in the military and defense sectors in North America will help the GaN semiconductor devices market gain traction.

In the past few years, GaN technology has witnessed rapid advancements and vast improvement in the ability of GaN semiconductors to work under operating environments featuring high frequency, power density, and temperature with improved linearity and efficiency. These advancements has boosted the usage of GaN semiconductor devices across an increased set of applications and have played an important role in the market’s overall growth lately.

Along with this factor, the increased usage of GaN semiconductor devices in the defense sector has also emerged as a key driver of the global GaN semiconductor devices market. The continuous rise in defense budgets of developing and developed countries as well as the demand for inclusion of the technologically most advanced products in the arsenal of national and international armies will propel the global GaN semiconductor devices market in the near future.

Relatively higher costs of GaN semiconductor devices to hinder market growth

GaN semiconductors are relatively expensive as compared to silicon-based semiconductors owing to the high production costs of gallium nitride as compared to silicon carbide. Further addition in the cost of GaN semiconductors is ensued due to the high cost of fabrication, packaging, and support electronics. Silicon-based semiconductors have witnessed a significant decline in their costs over the past few years, making high cost of GaN semiconductors a foremost challenge that could hinder their large-scale adoption.

The issue can be tackled by producing GaN in bulk. However, there is currently no widespread method that can be used for the purpose owing to the requisition of high operating pressure and temperature and limited scalability of the material.

Pixelligent Technologies, a developer of high-index advanced materials for solid state lighting and display applications and producer of PixClear products, announced today that it closed $10.4 million in new funding. The round was led by The Abell Foundation, The Bunting Family Office, and David Testa, the former Chief Investment Officer of T. Rowe Price. Funds will be used to complete the installation of additional manufacturing capacity, open new offices in Asia, and continue to drive innovation in lighting, display and optical applications.

To date Pixelligent has raised over $36.0M in equity funding and has been awarded more than $12M in U.S. government grant programs to support the development of its proprietary PixClear products and PixClearProcess. The Pixelligent nanotechnology platform includes proprietary nanocrystal synthesis, capping technology, high volume manufacturing and application engineering that supports ink jet, slot die, UV curing, spray coating, and numerous other manufacturing processes.

“We have clearly established Pixelligent as the leading high-index materials manufacturer for demanding solid state lighting and OLED display applications throughout the world. Pixelligent is partnering with leading advanced materials suppliers to deliver breakthrough performance that currently spans applications in 12 discrete markets including: lighting, displays, printed and flexible electronics, AR/VR, optically clear adhesives, MEMS, gradient index lenses, and others with a combined total over $9B in market opportunities. We have numerous commercial applications currently in the market and expect additional product introductions before the end of 2016,” said Craig Bandes, President & CEO of Pixelligent Technologies.

“We started our partnership with Pixelligent in 2011 when the company relocated to Baltimore City and have seen the company achieve all of their critical technology and manufacturing milestones, while establishing a global brand and presence. Our investment objective is to support leading edge companies that deliver breakthrough technology and products and create jobs in our local community. Pixelligent is at the forefront in delivering on the promise of the nanotechnology revolution. We are proud of what the team at Pixelligent has accomplished to date and we look forward to their continued growth and success,” said Eileen O’Rourke, CFO of The Abell Foundation.

Veeco Instruments Inc. (NASDAQ: VECO) announced today that Epistar Corporation (TSE: 2448) has ordered multiple TurboDisc EPIK 700 Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) Systems for the production of light emitting diodes (LEDs). The Veeco systems will be used to meet demand for various applications.

“The improved demand of solid state lighting combined with the need to compete in a competitive market dictates we choose the most productive and most cost-efficient MOCVD platform in the industry,” said Dr. MJ Jou, President, Epistar Corporation. “Veeco has been our supplier of choice dating back to their innovative K465i system. After adopting their latest EPIK platform, we have achieved superior yield results and lowered manufacturing costs. The addition of these new EPIK MOCVD systems will help advance our production goals and improve our product competitiveness.”

Based on Veeco’s proven TurboDisc technology and the proprietary Uniform FlowFlange, the award-winning EPIK 700 MOCVD system enables customers to achieve an improved cost per wafer savings compared to previous MOCVD systems through improved wafer uniformity, reduced operating expenses and increased productivity.

“We believe that a leader such as Epistar ramping production to meet demand of LEDs is a positive sign for the industry as a whole,” said James T. Jenson, Senior Vice President, Veeco MOCVD Operations. “Veeco’s superior MOCVD technology is the number one choice of manufacturers looking for a competitive edge in a market that seems to be turning upward again. We look forward to supporting Epistar’s future MOCVD requirements as they continue their growth plans.”

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced worldwide sales of semiconductors reached $79.1 billion during the second quarter of 2016, an increase of 1.0 percent over the previous quarter and a decrease of 5.8 percent compared to the second quarter of 2015. Global sales for the month of June 2016 reached $26.4 billion, an uptick of 1.1 percent over last month’s total of $26.1 billion, but down 5.8 percent from the June 2015 total of $28.0 billion. Cumulatively, year-to-date sales during the first half of 2016 were 5.8 percent lower than they were at the same point in 2015. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

“Global semiconductor sales increased slightly from Q1 to Q2 but remain behind the pace from last year, due largely to global economic uncertainty and sluggish demand,” said John Neuffer, president and CEO, Semiconductor Industry Association. “Sales into Japan and China have been a bright spot midway through 2016, and a modest rebound in sales is projected during the second half of the year.”

Regionally, sales increased compared to June 2015 in China (1.7 percent), but fell in Asia Pacific/All Other (-11.0 percent), the Americas (-10.8 percent), Europe (-5.5 percent), and Japan (-1.3 percent). Sales were up slightly compared to last month in the Americas (3.0 percent), China (2.2 percent) and Europe (1.7 percent), but down somewhat in Japan (-1.0 percent) and Asia Pacific/All Other (-0.6 percent).

sales graph sales table

The gallium nitride (GaN) substrates market is set to cross $4 billion USD by 2020, according to the market research report “Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN on GaN); By Products (Blu-ray Disc (BD), LEDs, UV LEDs) By Industry (Consumer Electronics, Telecom, Industrial, Power, Solar, Wind)-Forecast(2015-2020)”, published by IndustryARC.

Gallium Nitride (GaN) is a semiconductor compound material which has proved to be advantageous in comparison to the other conventional materials such as Silicon, Silicon Carbide, Aluminum, and so on. GaN substrates are essential materials which are deployed across blue-violet laser diodes in recorders or BD players and the power control elements. GaN materials are also used across optoelectronic products such as lasers, LEDs, Power Electronics and Radio Frequency amplifiers.

Optoelectronics are the key devices that employ GaN substrates, among which, LEDs account for over 70% share. Traditionally, these devices are grown on GaN on Sapphire, GaN on Si, and GaN on Sic substrates with GaN on Sapphire being the most utilized substrate. However, these substrates contain GaN layers grown by epitaxial methods leading to lattice mismatches and defects. In this context, the gallium nitride substrates are presented as the potential substitute for the foreign substrates. The GaN epitaxy if performed on the native substrates has several technical advantages and also improves the performance of the devices.

According to recent study by IndustryARC, the GaN substrates market is dominated by sapphire which is nearing maturity. The market for sapphire substrates was around $ 1.4 billion in 2014 and estimated to grow at 7% CAGR in 2015-2020. The market is estimated to showcase normal growth rates and grow predictably till 2020 and if any disrupting market developments are expected from the silicon and bulk GaN substrate areas. There is only company, Cree Inc. manufacturing GaN on SiC products and very few players adopting GaN on Si. Acquisitions and partnerships are going to be the key in these segments to showcase significant growth in the next five years.

Asia-Pacific is the key region for both substrates and devices market. LEDs, with demand in particular from automotive and lighting industry, are estimated to drive the GaN market in the period 2015-2020. In this, region, Japan, China, and Korea are the key regions where majority of the players are located and demand emerges. The less labor and production costs in these countries are aiding manufacturers to set up production facilities. In 2015, Panasonic Corporation has shifted its LED production to Japan from Indonesia to capitalize these advantages in the country and further grow its share in the LED market. Besides that, the substrate suppliers are also strongly distributed in the region. With these players significantly scaling up their global market position, the prices are estimated to be affected significantly. In countries such as China, the substrates are offered at cheaper prices which will not only attract LED producers significantly but also intensify demand for cheaper products.

The bulk GaN or GaN on GaN substrates hold lot of promise in the LED, Power Electronics, and RF products. Particularly in power electronics, the bulk gallium nitride substrates are proven to be very useful. There is significant research underway to realize the GaN material potential into these industries and very recently, MIT researchers have successfully enabled GaN power transistors at low cost. Due to huge power saving nature of the components made from them, the billion dollar markets such as internet of things and electric vehicles market are only ready to embrace bulk GaN substrates. Thus, with encouraging developments in the market and potential billion markets, bulk GaN is projected as the game changer. But, to realize the same, there are substantial obstacles in terms of production and capital. Therefore, even in 2020, the market is estimated to be dominated by foreign substrates where bulk GaN will account for smaller share.

Ultratech, Inc., a supplier of lithography, laser­ processing and inspection systems used to manufacture semiconductor devices and high-brightness LEDs (HBLEDs), as well as atomic layer deposition (ALD) systems, today announced that it has received a multiple-system, follow-on order from a leading semiconductor manufacturer for its advanced packaging AP300 lithography systems. The AP300 systems will be utilized for high-volume, fan-out wafer-level packaging (FOWLP) applications used to manufacture leading-edge chips.  Ultratech will begin shipping the additional systems in the second quarter of this year to the customer’s facility in Asia.

Ultratech General Manager and Vice President of Lithography Products Rezwan Lateef stated, “Fan-out technologies continue to be regarded as the optimal solution for the highly-demanding mobile and wireless markets. While traditional 3D techniques, such as TSV, are still too expensive for industry-wide adoption, FOWLP is being leveraged as a cost-effective packaging solution that delivers excellent performance and a small form factor. Ultratech’s application-specific options for FOWLP lithography provide superior results to meet the challenges of fan-out wafer processing, such as die surface-to-mold non-planarity, die misalignment and wafer warpage. This follow-on order further confirms our technology leadership and the value proposition of our AP300 systems over full-field 1X scanners and reduction steppers. As we continue to build on our relationship with this valued customer, we look forward to supporting their aggressive technology roadmap which includes the utilization of interposers for high-end processors.”

Ultratech’s AP300 family of lithography steppers

The AP300 family of lithography systems is built on Ultratech’s customizable Unity Platform, delivering superior overlay, resolution and side wall profile performance and enabling highly-automated and cost-effective manufacturing. These systems are particularly well suited for copper pillar, fan-out, through-silicon via (TSV) and silicon interposer applications. In addition, the platform has numerous application-specific product features to enable next-generation packaging techniques, such as Ultratech’s award winning dual-side alignment (DSA) system, utilized around the world in volume production.

Today, SiC benefits are not a secret anymore and progressively lot of industries are considering the development of new products including SiC technologies.

”The SiC power business is concrete and real, with a promising outlook,” announced Yole Développement (Yole) in its latest compound semiconductor report, Power SiC 2016: Materials, Devices, Modules & Applications. The SiC power market, diode and transistor included is estimated to be more than $200 million in 2015 and forecasted to be more than $550 million in 2021, with a 2015 – 2021 CAGR of 19%. SiC diodes still dominate the overall SiC market with 85% market share. According to Yole, this leading position will not change for several years. In parallel, SiC transistors are more and more present and should reach 27% market share in 2021. SiC solutions are diffusing step by step into multiple application segments: “We are at the opening stage of the SiC industry for power electronics applications,” confirmed Yole’s analysts.

This SiC technology & market analysis is not the first edition for Yole. Therefore, the “More than Moore” market research and strategy consulting company has been working for fifteen years on SiC technologies, associated markets and more globally within the WBG area. This year, this report is probably the most successful achievement with a global comprehension of the market needs and technology challenges.

Yole’s analysis details a relevant description of the SiC power industry landscape and lists the key related market data. It also proposes a detailed review per market segment, a full analysis of the SiC supply chain including new entrants, mergers and acquisitions and a technology roadmap. A special section has been also performed by Yole’s analysts to understand the current issues in China and identify business opportunities. With this 2016 edition, Yole confirms its leadership within the analysis of the WBG industry, its technologies and market trends.

Not surprisingly, the PFC power supply market is still the leading application with almost 50% market share (in revenue), consuming a large volume of diodes in 2015. However this market share is expected to decrease little by little after 2016. So far behind, PV inverters are close behind. Indeed SiC diodes and MOSFETs are now used by various PV inverter manufacturers in their products. It has been confirmed that SiC implementation provides several performance benefits including increased efficiency, reduced size and weight. In addition, it allows to low cost at the system level in certain power range. “At Yole, we have received increasingly positive feedback from the market”, said Dr. Hong Ling, Technology & Market Analyst at Yole. “And we expect other manufacturers to follow in the footsteps of the early adopters, leading to a rapid expansion of the PV segment in the coming years.”

Other SiC applications include UPS , motor drive, wind, EV/HEV and rail, all with different levels of adoption. Within the rail sector, SiC penetration continues. For EV/HEV applications, OEMs and Ter1 are testing SiC devices but qualification time is long…

The benefits enabled by SiC, the continuous performance improvement, and the cost erosion of SiC power devices will clearly fuel the implementation of SiC in different applications. “Under this new SiC edition, we propose a deep understanding of SiC implementation in different segments”, comments Dr Ling at Yole. Indeed this analysis offers a comprehensive summary of SiC power device market data (split by application), including PFC/power supply, PV, EV/HEV, uninterruptible power supplies (UPS), motor drives, wind, and rail.

SiC power is creating many opportunities for many different types of suppliers. Indeed, attracted by the market’s potential, more and more players are entering at different levels of the value chain:
•  At the module packaging level, Starpower just showed their SiC module in May 2016.
•  At the device level, after investing in Monolith Semiconductors in 2015, Littlefuse released its SiC diode products in May this year, with the intention to develop a full product range. Yole has also identified other newcomers including Brückewell, YangJie Technology, Gengol, each with different backgrounds and different business models.
•  On the materials side, Aymont, the SiC growth furnace supplier, has started to supply SiC wafers.

Furthermore, existing players will expand their products. For example, Infineon Technologies just released its 1200V SiC MOSFET and plans to go into mass production in 2017. Also, Fuji’s full SiC module will be available. As more and more products reach the market, Yole expects an acceleration of SiC. This growing market is generating plenty of opportunities for different types of suppliers: passive components, materials suppliers, test equipment suppliers, and more.