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Immersion Corp. (Nasdaq: IMMR), a developer and licensor of touch feedback technology, today announced that Tom Lacey will become the company’s Interim Chief Executive Officer and the newest addition to the Immersion Board of Directors, effective immediately. Lacey succeeds Carl Schlachte, the company’s prior Interim CEO, who is resigning as a director of Immersion.

Lead independent director Sharon Holt has been named Chairman of the Immersion Board.

“We are delighted to have Tom Lacey join us as Interim CEO and a member of the Immersion board,” said Ms. Holt. “Tom is a world class executive who brings a wealth of experience and talent during this important time for Immersion. We are confident that Tom’s leadership and industry expertise will serve Immersion well during his time as Interim CEO as well as during his ongoing service on our Board of Directors. The board looks forward to expeditiously completing the process of hiring a permanent CEO.”

Tom Lacey, the Interim Chief Executive Officer and new Immersion board member, said, “I have gotten to know Immersion well, and I am thrilled to join as both Interim CEO and as a member of the board. I am looking forward to working with the employees, management, customers and board of Immersion to help capitalize on the opportunities ahead.”

With 30 years of experience in the industry, Lacey has a proven track record of successfully leading a diverse group of technology companies.

From May 2013 to June 2017, Lacey served as Chief Executive Officer and a director of Xperi Corporation (formerly Tessera; Nasdaq: XPER), a technology licensor in mobile computing and communications, memory and data storage, and 3-D integrated circuit technologies. He also currently serves as a director of DSP Group (Nasdaq: DSPG). Prior to these roles, he held a number of senior leadership positions at Components Direct, Phoenix Technologies Ltd., Applied Materials, Inc., Flextronics International, and International Display Works. Prior to that, Lacey held various management and executive positions at Intel Corporation for 13 years, including Vice President Sales and Marketing, President of Intel Americas, and Vice President and General Manager, Flash Products.

ClassOne Technology, a supplier of new electroplating and wet process tools to the 200mm and smaller semiconductor manufacturing industry, today announced a multi-tool sale of its flagship Solstice® CopperMax™ electroplating system to China’s premier compound semiconductor manufacturer. As the largest such supplier in China—among the largest Gallium Arsenide (GaAs) fabs in the world—ClassOne’s new client will use CopperMax™ to anchor the production of highly-advanced power chips with breakthrough designs suitable for a variety of leading-edge semiconductor markets.

“ClassOne has emerged as the supplier of choice for the exacting requirements of the Compound Semiconductor industry,” says ClassOne CEO Byron Exarcos. “ClassOne has presence in each of the leading Compound Semiconductor fabs around the world, now including a global leader in the development and manufacture of semiconductors based on GaAs substrates. This sale further confirms ClassOne’s leadership status in electroplating technology worldwide.”

ClassOne expects multiple similar sales in the coming months, as semiconductor manufacturing facilities throughout Asia expand their processing capabilities for advanced applications such as 3D Sensing, Autonomous Vehicles, and 4G/5G Communications—applications that require highly-advanced Compound Semiconductor chip technology.

Integrated Device Technology, Inc. (IDT) (NASDAQ :IDTI ) announced today a strategic partnership with Steradian Semiconductor Pvt. Ltd. to deliver ultra-high resolution 4D mmWave imaging RADAR for emerging industrial, security, medical, and autonomous vehicle markets.

Steradian Semiconductor is a fabless semiconductor company based out of Bangalore, India. Steradian is founded by industry experts with decades of experience in designing cellular/RF and microwave transceiver ICs. Their unique IP has enabled IDT to offer highly differentiated “SenseVerse” series of RADAR transceiver ICs to our customers.

The IDT® SenseVerse SVR4410 IC is a multi-channel high resolution MIMO RADAR device that operates in the 76-81 GHz frequency band offering superior interference performance and the highest number of channels per device in the industry. With integrated beamforming and support for multi-device aggregation, the SVR4410 provides best-in-class angular resolution, range, and power consumption in a very small form factor. The two companies are collaborating on a series of roadmap ICs with increasing levels of integration and enable customers’ adoption by means of providing radar modules with integrated antennas, SVR transceiver ICs, radar processing IC and DSP algorithms.

“IDT’s SenseVerse RADAR family will add new dimension to sensing and vision, causing a disruptive change in Industry 4.0 and similar end markets needing high resolution solutions,” stated Sailesh Chittipeddi, executive vice president, global operations and chief technology officer at IDT. “IDT’s novel imaging RADAR architecture based on mmWave technology will be key to reliable and autonomous operation in various climatic conditions and continues IDT’s tradition of delivering high value-added solutions for its customers.”

“IDT’s SenseVerse RADAR family offers all weather high resolution sensing and will enhance and complement human and computer vision,” said Gireesh Rajendran, CEO of Steradian Semiconductor. “IDT’s SVR4410 and roadmap ICs together with Steradian’s RF expertise will offer exceptional value to a wide variety of application spaces.”

IDT’s SenseVerse RADAR products are currently sampling at selected customers.

Semtech Corporation (Nasdaq: SMTC), a supplier of high performance analog and mixed-signal semiconductors and advanced algorithms, announced that EasyLinkin, a high-tech enterprise specializing in the research and development of low power wide area network (LPWAN) technologies, has incorporated Semtech’s LoRa® devices and wireless radio frequency technology (LoRa Technology) into its IoT smart metering solutions to improve facility management.

LoRa-enabled smart meters from EasyLinkin monitor utility usage rates in real-time to provide facilities more visibility to reduce operating costs. EasyLinkin’s LoRa-based products are easy to install on existing meters and are currently being deployed across China in both public and private LoRaWAN™ networks. Utility companies are able to monitor utility usage in real-time to reduce operational costs and conserve natural resources.

“Our customers are able to analyze their usage through real-time data collected by our smart metering solutions to reduce operational costs,” said Kun Xu, Co-Founder & Executive President at EasyLinkin. “This was enabled and would not be possible without Semtech’s LoRa Technology, which provides the ideal IoT solution for utility monitoring and management. The easy deployment and flexibility of LoRa Technology enables consistent data transmission in either a private or public network.”

“With an increased emphasis on sustainability, there’s an absolute need for IoT solutions, like Semtech’s LoRa Technology, to solve real-world environmental challenges,” said Vivek Mohan, Director of IoT, Semtech’s Wireless and Sensing Products Group. “Integrating LoRa Technology into EasyLinkin’s metering devices provides an IoT solution that reduces operational costs like maintenance and allows an inside look into utility consumption, letting consumers change their usage accordingly.”

About Semtech’s LoRa® Devices and Wireless RF Technology

Semtech’s LoRa devices and wireless radio frequency technology is a widely adopted long-range, low-power solution for IoT that gives telecom companies, IoT application makers and system integrators the feature set necessary to deploy low-cost, interoperable IoT networks, gateways, sensors, module products, and IoT services worldwide. IoT networks based on the LoRaWAN™ specification have been deployed in over 100 countries and Semtech is a founding member of the LoRa Alliance™, the fastest growing IoT Alliance for Low Power Wide Area Network applications. To learn more about how LoRa enables IoT, visit Semtech’s LoRa site and join the LoRa Community to access free training as well as an online industry catalog showcasing the products you need for building your ideal IoT application.

Sanan Integrated Circuit Co., a pure-play compound semiconductor foundry, today announces its entry into the North American, European, and Asia Pacific (APAC) markets with their advanced III-V technology platform. With their broad portfolio of gallium arsenide (GaAs) HBT, pHEMT, BiHEMT, integrated passive device (IPD), filters, gallium nitride (GaN) power HEMT, silicon carbide (SiC), and indium phosphide (InP) DHBT process technologies, they cover a wide range of applications among today’s active microelectronics and photonics markets. Sanan IC is strongly focused on high performance, large scale, and high quality III-V semiconductor manufacturing and on serving the RF, millimeter wave, power electronics, and optical markets.

Founded in 2014, headquartered in Xiamen City, in the Fujian province of south China, Sanan IC is subsidiary of Sanan Optoelectronics Co., Ltd., the leading LED chip manufacturing company, based on GaN and GaAs technologies. Leveraging high volume production and years of investment in numerous epitaxial wafer reactors of its parent company for the LED lighting and solar photovoltaic markets, Sanan IC is expanding their go-to-market strategy beyond the Greater China region as their process technologies and patent portfolio mature, with a vision to fulfill the needs of independent design manufacturers (IDM’s) and fabless design houses for high volume compound semiconductor fabrication.

“We see tremendous opportunity in serving the world-wide demand for large scale production of 6-inch III-V epitaxial wafers, driven by continual growth of the RF, millimeter wave, power electronics, and optical markets,” said Raymond Cai, Chief Executive Officer of Sanan IC. “Our vertically integrated manufacturing services over our broad compound semiconductor technology platform, with in-house epitaxy and substrate capabilities, make us an ideal foundry partner. Given the capital investments made on state-of-the art equipment and facilities, with full support from our parent company, Sanan Optoelectronics, combined with strategic partnerships, and a world-class team of scientists and technologists, Sanan IC is well positioned for success in this active compound semiconductor market”.

As cellular mobility and wireless connectivity proliferates in the Internet-of-Things (IoT), and 5G sub-6GHz evolves into millimeter wave, III-V technologies become even more critical to support the infrastructure and client device deployments by carriers worldwide. According to Yole Développement (Yole), a leading technology market research firm, part of Yole Group of Companies, the GaAs wafer market, comprised of RF, photonics, photovoltaics, and LEDs, is expected to grow to over 4 million units in 2023, with photonics having the highest growth at 37% CAGR1. GaN and SiC for power electronics, such as for data centers, electric vehicles (EVs), battery chargers, power supplies, LiDAR, and audio, are predicted to ramp up, with GaN reaching up to $460M shipments by 2022 with a CAGR of 79%2 while SiC projects to reach $1.4B at 29% CAGR by 20233. Optical components continue to be in high demand for datacom, telecom, consumer, automotive and industrial markets, leading to increased revenues for photodectors, laser diodes, and especially VCSELs with expected shipments of $3.5B in 20234. As these applications emerge, Sanan IC is poised to support the industry’s needs.

Sources:
1GaAs Wafer & Epiwafer Market: RF, Photonics, LED & PV Applications Report, Yole Développement (Yole), 2018
2,3Power SiC 2018: Materials, Devices and Applications Report, Yole Développement (Yole), 2018
4Source: VCSELs – Technology, Industry & Market Trends report, Yole Développement (Yole), 2018

TowerJazz, the global specialty foundry, today announced its participation at the 44th European Conference on Optical Communication (ECOC) being held in Rome, Italy on September 23-27, 2018. The Company will showcase its advanced SiGe (Silicon Germanium) process, with speeds in excess of 300GHz, and its newest production SiPho (Silicon Photonics) process built into data center high-speed optical data links.

TowerJazz has a significant foundry share of the 100Gb/s transceiver market served by its SiGe Terabit Platform and will showcase even higher SiGe transistor speeds and patented features appropriate for 200 and 400Gb/s communication ICs such as  transimpedance amplifiers (TIAs), laser and modulator drivers, and clock and data recovery circuits.

TowerJazz’s SiPho production platform enables high bandwidth photo diodes, together with waveguides and modulators, with a roadmap to allow InP components on the same die and permit a high-level of optical integration for next-generation data center optical links.  An open design kit is available to all customers and supported by prototyping and shuttle runs.

To set up a meeting or see a demo with TowerJazz technical experts at the TowerJazz ECOC booth (#569), or for more information, please click here or inquire at: [email protected].

Soitec (Euronext Paris), a designer and manufacturer of semiconductor materials, and MBDA, announce the joint acquisition of Dolphin Integration.

Dolphin Integration is an industry recognized provider of semiconductor design, silicon IP and SoC (System-On-Chip) solutions for low power applications. Headquartered in Grenoble, Dolphin Integration was founded in 1985. It currently employs 155 people, including 130 design engineers. For the fiscal year ended March 31th, 2018, the company generated revenues of 17 million Euros.

The joint venture formed by Soitec and MBDA acquires Dolphin Integration, including all employees. The resulting ownership of the joint venture is as follows: Soitec at 60% and MBDA at 40%.

The transaction was authorized today by the Commercial Court of Grenoble. It comes as a prompt and positive outcome of Dolphin Integration insolvency proceedings. The company went into receivership on July 24, 2018.

Soitec and MBDA each provide complementary strategic support to Dolphin Integration.

Soitec brings its engineered substrates expertise and unique low-power design methodology (body biasing) to accelerate Dolphin Integration design activities in low-power electronic devices, where a growing number of critical chips are built on FD-SOI technology. In addition, Soitec will strengthen Dolphin Integration’s position within the entire semiconductor ecosystem, to develop and promote products and services in several strategic markets, including mobile devices and infrastructure, data centers, and space and industrial applications.

MBDA, a strategic customer of Dolphin Integration for defense applications since 2004, strengthens its existing industrial collaboration and long-term commercial pipeline for ASIC (Application Specific Integrated Circuit) and SoC (System on Chip) products. With the support of MBDA, Dolphin Integration will be able to advance its positions in aerospace and defense design.

Soitec and MBDA confident in Dolphin Integration profitable growth.

Soitec and MBDA together committed to a financial investment of around 6 million Euros including the acquisition of most of Dolphin Integration’s assets, the payment of certain liabilities and a significant cash injection to finance Dolphin Integration’s working capital requirements.

Soitec and MBDA are confident in their ability to turnaround the financial position of Dolphin Integration. Dolphin Integration is expected to be fully consolidated into Soitec’s financial statements as of September 2018.

“Dolphin Integration represents a strategic opportunity for Soitec to reinforce a full IP and service offering related to energy efficient solutions for chip design on FD-SOI. This is a major differentiating factor for FD-SOI and a key accelerator of FD-SOI adoption in major market segments,” highlighted Paul Boudre, CEO of Soitec.

“MBDA investment will strengthen the French defense industrial base since it will provide Dolphin Integration with a more stable flow of defense related revenues and a closer technological collaboration that will allow it to enhance the access of its specialized microelectronics offering to the entire French and European defense industry,” said Antoine Bouvier, CEO of MBDA.

In the last few years, biggies in the Vacuum Pump Market have set different business goals to attain a dominant market position. Their approach toward improving their current stance has been remarkably influencing the quality and design performance of vacuum pumps, which has positively impacted the shelf life and cost-effectiveness of the products. The optimized approach of players toward new product developments and business expansions is certainly poised to push vacuum pump market size. Some of the recent instances witnessed across vacuum pump market that are likely to etch a positive growth path for this industry are described below.

How Leybold, Atlas Copco, and Edwards combinedly contributed toward vacuum pump market expansion

Of late, it has been observed that reliability and cleanliness are becoming highly important in most of the production processes. Having recognized that efficient vacuum technology development could fulfill these industrial requirements, a few days before, Leybold, a subsidiary of the Atlas Copco Group, unveiled an oil-free vacuum pump with two variants of speed, which are designed to be useful in dusty and moist processes. Through in-depth R&D, the product manufacturers have successfully reduced the operating noise and maintenance cost associated with the Oil-Free VARODRY Vacuum Pump. In addition, the compact design helps users to integrate this product into existing systems very easily.

Speaking more about this product launch, the speed variants have made it ideal for industrial vacuum requirement with low investment and operating costs. This innovative product prevents oil leaks and particle emissions in a vacuum chamber, which will turn out to be a tremendous help to speed up industrial processes. It is thus rather overt, that with the launch of this maintenance-free and robust pump, Leybold has set a new benchmark ahead for the giants in vacuum pump market.

Prior to this launch, the parent company of Leybold, Atlas Copco unveiled its new product – a multiple dry claw vacuum pump system which is ideally suited for the industries operating in dry and hot working environments. This newly developed vacuum pump aims to provide high energy efficiency and better operational performance. The future deployment of this product for performing numerous dry pumping applications comprising pneumatic pumping, packaging lines, and drying processes is certain to fuel vacuum pump market trends over the years ahead.

With the development of a next-generation oil sealed rotary vane vacuum pump, the UK headquartered vacuum engineering company, Edwards had aimed to expand its customer base. This subsidiary of Atlas Copco designed a safe, stable, and compact size vacuum pump which could be suitable for applications in explosive environments especially in chemical processing industries. While developing this variant of vacuum pump, the designers of Edwards focused on customary requirements mainly across the U.S. and European belts. Post the launch, analysts deem that this approach could help Edwards considerably extend its customer base across North America and Europe. In addition, the deployment of these new products across the chemical, automotive, degassing, and pharmaceutical sectors has helped giants in vacuum pump market to extend their application scope across most of the industries.

It is rather overt that with the launch of a novel pumping system portfolio, core companies are looking forward to achieving competitive benefits ahead. The increasing need of highly efficient and environment-friendly pumping systems is considerably encouraging giants in vacuum pump market to carry out intensive research programs as well. The recent R&D outcomes such as improved lifecycle and cost-effectiveness will prove to be game-changing for the biggies in vacuum pump market, which is predicted to generate a revenue of over USD 6.5 billion by the end of 2025.

  • Key Industry participants for Vacuum Pump Market are –
  • Atlas Copco
  • Pfeiffer Vacuum Technology AG
  • Gardner Denver
  • Agilent Technologies Inc.
  • ULVAC Inc.
  • Ebara Corporation
  • Leybold GmbH
  • Busch Vacuum Pumps and Systems
  • Shimadzu Corporation
  • Kashiyama Industries Ltd.
  • KNF Neuberger GmbH
  • Gast Manufacturing Inc.
  • Becker GmbH
  • DEKKER Vacuum Technologies, Inc.
  • PPI Pumps Pvt. Ltd.

Powered by a widespread application scope and ongoing technological advancements, vacuum pump market trends have undergone a tremendous transformation since the last few years. The extensive involvement of industry players in research and development activities has been paving the way for remarkable breakthroughs in futuristic vacuum technology requirements. Having recognized the significance of frequent product launches, vacuum pump market contenders have been focusing lately on the development of customized solutions to strengthen their customer base.

Speaking of advancements in vacuum technology, the end-users across myriad sectors ranging from solar manufacturing to scientific instrumentation and flat panel display to semiconductors have been going the whole hog to tap the benefits of modern vacuum mechanisms. The subsequent deployment of modern vacuum pumps for pumping services across numerous industrial applications is thus poised to boost vacuum pump market share.

Browse key industry insights report, “Vacuum Pump Market Size By Lubrication (Dry, Wet), By Technology (Gas Capture/Binding Pumps, Gas Transfer Pumps [Positive Displacement Pumps, Kinetic Pumps]), By Product (Low Vacuum, Medium Vacuum, High Vacuum), By End-user (Chemical & Pharmaceutical, Semiconductor & Electronics, Oil & Gas, Food & Beverages, Wood, Paper & Pulp), Industry Analysis Report, Regional Outlook (U.S., Canada, Germany, UK, France, Spain, Italy, Russia, China, India, Japan, Australia, Indonesia, Malaysia, South Korea, Brazil, Mexico, South Africa, Saudi Arabia, UAE, Kuwait), Application Growth Potential, Price Trends, Competitive Market Share & Forecast, 2018 – 2025”

https://www.gminsights.com/industry-analysis/vacuum-pump-market

SiFive, a provider of commercial RISC-V processor IP, today announced the first open-source RISC-V-based SoC platform for edge inference applications based on NVIDIA’s Deep Learning Accelerator (NVDLA) technology.

The demo will be shown this week at the Hot Chips conference and consists of NVDLA running on an FPGA connected via ChipLink to SiFive’s HiFive Unleashed board powered by the Freedom U540, the world’s first Linux-capable RISC-V processor. The complete SiFive implementation is well suited for intelligence at the edge, where high-performance with improved power and area profiles are crucial. SiFive’s silicon design capabilities and innovative business model enables a simplified path to building custom silicon on the RISC-V architecture with NVDLA.

NVIDIA open-sourced its leading deep learning accelerator over a year ago to spark the creation of more AI silicon solutions. Open-source architectures such as NVDLA and RISC-V are essential building blocks of innovation for Big Data and AI solutions.

“It is great to see open-source collaborations, where leading technologies such as NVDLA can make the way for more custom silicon to enhance the applications that require inference engines and accelerators,” said Yunsup Lee, co-founder and CTO, SiFive. “This is exactly how companies can extend the reach of their platforms.”

“NVIDIA open sourced its NVDLA architecture to drive the adoption of AI,” said Deepu Talla, vice president and general manager of Autonomous Machines at NVIDIA. “Our collaboration with SiFive enables customized AI silicon solutions for emerging applications and markets where the combination of RISC-V and NVDLA will be very attractive.”

The 64thannual IEEE International Electron Devices Meeting (IEDM), the world’s largest, most influential forum for technologists to unveil breakthroughs and new concepts in transistors and related micro/nanoelectronics devices, will be held December 1-5, 2018 at the Hilton San Francisco Union Square hotel. The late-news submission deadline is September 10.

The IEDM’s tradition of spotlighting more leading work in more areas of the field continues, even as the conference evolves to support the interdisciplinary and continuing educational needs of the scientists, engineers and students whose efforts make possible the expansion of the worldwide electronics industry.

“We live in a time when electronics technology touches more aspects of business and industry than ever before,” said Kirsten Moselund, IEDM 2018 Publicity Chair and Research Staff Member at IBM Research–Zurich. “No matter what their specialty is, attendees will come away from the conference with a deeper understanding of the challenges and opportunities before them.”

“In terms of industrial applications, the evening panel session on EUV will give attendees the opportunity to explore and debate this emerging technology with the very people who are driving it forward,” said Rihito Kuroda, IEDM 2018 Publicity Vice Chair and Associate Professor at Tohoku University. “This is just one way in which the IEDM conference gives people insights into the technologies that will become mainstream in a few years.”

Here are details of some of the talks and events that will take place at this year’s IEDM. The papers to be presented in the technical sessions will be chosen in late September and highlights from them will be forthcoming soon thereafter:

Focus Sessions

  • Quantum Computing – Quantum computing will enable new types of algorithms to tackle problems in areas from materials science to medicine to artificial intelligence. We are still in early stages, facing fundamental questions such as: What is the best way to implement a quantum bit of information? How to connect them together? How to scale to larger systems without being overwhelmed by errors? This session brings together experts at the forefront of quantum computing research. Starting from an applications perspective, attendees will hear about different approaches to address fundamental questions at the device level; the progress achieved so far; and next steps.
    • Application Requirements for Quantum Computing, John Preskill, Caltech
    • Materials and Device Challenges for Near-Term Superconducting Quantum Processors, Jerry Chow, IBM
    • Towards Scalable Silicon Quantum Computing, Maud Vinet, CEA-Leti
    • Silicon Isotope Technology for Quantum Computing, Kohei Itoh, Keio University
    • Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology, Ravi Pillarrisetty, Intel
    • Scalable Quantum Computing with Single Dopant Atoms in Silicon, Andrea Morello, Univ. New South Wales
    • Majorana Qubits, Leo Kouwenhoeven, Microsoft
  • Future Technologies Towards Wireless Communications: 5G and Beyond– 5G technology will drastically reduce limitations on accessibility, bandwidth, performance, and latency, but as it triggers fundamentally new applications it also will impose unique hardware requirements. This focus session will set a big picture view and then narrow down to how innovations in CMOS technologies, devices, filters, transceivers and antennas are coming together to enable the 5G platform.
    • Intel 22nm FinFET (22FFL) Process Technology for RF and mmWave Applications and Circuit Design Optimization for FinFET Technology, Hyung-Jin Lee, Intel
    • RFIC/CMOS Technologies for 5G, mmWave and Beyond, Ali Niknejad, UC Berkeley
    • GaN HEMTs for 5G Base Station Applications, Shigeru Nakajima, Sumitomo Electron Devices
    • Highly Integrated mm-Wave Transceivers for Communication Systems,Vadim Issakov, Infineon
    • BAW Filters for 5G Bands, Robert Aigner, Qorvo
    • Reconfigurable Micro/Millimeter-wave Filters, Dimitrios Peroulis, Purdue
  • Challenges for Wide Bandgap Device Adoption in Power Electronics– Wide bandgap (WBG) power devices offer potential savings in both energy and cost. But converters powered by WBG devices require innovation at all levels, entailing changes to system design, circuit architecture, qualification metrics and even market models. Can SiC or GaN push beyond what silicon can possibly achieve? What are the big challenges researchers should answer over the next decade? A team of experts will interpret the landscape and discuss challenges to the widespread adoption of these technologies.
    • GaN and SiC Devices for Automotive Applications, Tetsu Kachi, Nagoya University
    • SiC MOSFET for Mainstream Adoption, Peter Friedrichs, Infineon
    • GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs- Requirements, Successes and Challenges, Primit Parikh, Transphorm
    • The Current Status and Future Prospects of SiC High Voltage Technology, Andrei Mihaila, ABB
    • Barriers to Wide Bandgap Semiconductor Device Adoption in Power Electronics, Isik Kizilyalli, ARPA-E
    • High to Ultra-High Voltage SiC Power Device Technology, Yoshiyuki Yonezawa, AIST
    • Effects of Basal Plane Dislocations on SiC Power Device Reliability, Robert E. Stahlbush, Naval Research Laboratory
  • Interconnects to Enable Continued Technology Scaling –BEOL copper (Cu) interconnects are close to end-of-life as a manufacturing technology, while the increasing complexity of MEOL processes requires novel materials. Also, the end of the Cu roadmap will coincide with significant changes in the dominant transistor architecture, and therefore the interaction between transistor architecture and interconnect will drive future interconnect development. This session provides a holistic perspective of interconnect scaling challenges and solutions. It will address the drivers of future interconnect architectures, the process options likely to be implemented in manufacturing, and how they will be tuned to ensure circuit reliability is maintained.
    • Interconnect Design and Technology Optimization for Conventional and Exotic Nanoscale Devices: A Physical Design Perspective, Naeemi, Georgia Tech
    • Mechanisms of Electromigration Damage in Cu Interconnects, K. Hu, IBM
    • Interconnect Metals Beyond Copper: Reliability Challenges and Opportunities, K. Croes, Imec
    • Microstructure Evolution and Effect on Resistivity for Cu Nano-interconnects and Beyond, Paul Ho, UT Austin
    • Integrating Graphene into Future Generations of BEOL Interconnects,-S. Philip Wong, Stanford
    • Interconnect Trends for Single Digit Nodes, Mehul Naik, Applied Materials

90-Minute Tutorials – Saturday, Dec. 1

A series of 90-minute tutorial sessions on emerging technologies will be presented by experts in the fields, bridging the gap between textbook-level knowledge and leading-edge current research.

  • Reliability Challenges in Advanced Technologies,Ryan Lu, TSMC
  • STT-MRAM Design and Device Requirements, Shinichiro Shiratake, Toshiba Memory
  • Quantum Computing Primer, Mark B. Ritter, IBM
  • Power Transistors in Integrated BCD Technologies, Hal Edwards, Texas Instruments
  • Design-Technology Co-optimization at RF and mmWave, Bertand Parvais, IMEC
  • Emerging Device Technologies for Neuromorphic Computing, Damien Querlioz, CNRS

Short Courses – Sunday, Dec. 2

Full-day Short Courses will be held, offering the opportunity to learn about important areas and developments, and to network with experts from around the world.

  • It’s All About Memory, Not Logic!, organized by Nirmal Ramaswamy, Micron
  • DRAM: Its Challenging History and Future, Dong Soo Woo, Samsung
  • 3D Flash Memories: Overview of Cell Structures, Operations and Scaling Challenges, Makoto Fujiwara, Toshiba Memory Corporation.
  • Emerging Memories Including Cross-Point, Opportunities and Challenges, Kiran Pangal, Intel
  • Memory Reliability, Qualification and their Relation to System-Level Reliability Strategies, Todd Marquart, Micron
  • Packaging Technology for High Bandwidth Memory, Nick (Namseog) Kim, SK Hynix
  • Processing in Memory (PIM): Performance and Thermal Challenges and Opportunities, Mircea Stan, UVA
  • Scaling Survival Guide in the More-than-Moore Era, organized by Jin Cai, TSMC
  • Extreme-UV Lithography – Principles, Present Status and Outlook,Tony Yen, ASML
  • MOSFET Scaling Knobs (GAA, NCFET…) and Future Alternatives,Witek Maszara, Globalfoundries
  • Overcoming Variation Challenges, Sivakumar Mudanai, Intel
  • Embedded Memory: Present Status and Emerging Architecture and Technology for Future Applications,Eric Wang, TSMC
  • 3D Integration for Density and Functionality,Julien Ryckaert, Imec
  • Advanced Packaging: the Next Frontier for Moore’s “Law,” Subramanian Iyer, UCLA

Plenary Presentations – Monday, Dec. 3

  • Future Computing Hardware for AI, Jeffery Welser, Vice President, IBM Research-Almaden
  • “4th Industrial Revolution and Foundry: Challenges and Opportunities,” Eun Seung Jung, President of Foundry Business, Samsung Electronics
  • The Status, Challenges and Opportunities of 5G, Prof. Gerhard P. Fettweis, TU Dresden

Evening Panel Session – Tuesday evening, Dec. 4

  • EUV: Too Little, Too Late, Too Expensive or the Ultimate Cure-All?,organized by Sanjay Natarajan, Senior VP of Applied Materials. Much progress has been made in EUV patterning technology, and yet manufacturing throughput, masks, pellicles and resists still persist as problems today. The complexity of reliably transferring features at the 7nm node and below using quadruple patterning and 193nm immersion is affecting yield, affecting the cost-per-gate reduction and slowing down Moore’s Law. The industry eagerly awaits EUV, but is it too little, too late and too expensive, or is it the ultimate panacea? A team of world-renowned experts from the leading logic and memory IDMs, foundries and fabless companies will vigorously debate the issue.

Luncheon – Wednesday, Dec. 5

The speakers are yet to be determined, but IEDM will have a new lunch event this year that features industry leaders engaging the audience on the state of the industry, and on careers in device and VLSI technology.

Vendor Exhibition/Poster Sessions

  • A vendor exhibition will be held once again, with special exhibit events in the evenings.
  • This year two poster sessions will be held, one on MRAM technology organized by the IEEE Magnetics Society, the other a student research showcase hosted by the Semiconductor Research Corporation.

Further information about IEDM

For registration and other information, visit www.ieee-iedm.org.

Follow IEDM via social media

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