Tag Archives: letter-pulse-tech

WIN Semiconductors Corp. (TPEx:3105), the world’’s largest pure-play compound semiconductor foundry, is driving the development and deployment of 5G user equipment and network infrastructure in the sub-6GHz and mmWave frequency bands. Front-end semiconductor technology has a significant influence on battery life and total power consumption of mobile devices and active antenna arrays employed in mmWave network infrastructure. GaAs is the technology of choice for front-ends used in LTE mobile devices and satisfies stringent linearity and efficiency requirements providing high quality of service while maximizing battery life. 5G user equipment and MIMO access points will impose more difficult linearity/power consumption specifications than LTE, and WIN’s portfolio of high performance GaAs technologies is well positioned to meet these new requirements and provide best value front-end solutions.

The fundamental performance advantages of GaAs make it the dominant semiconductor technology for cellular and Wi-Fi RF front-ends used in mobile devices. The technical and manufacturing demands of these large and highly competitive markets have driven significant advances in GaAs technology, and now offers best-in-class front-end performance in all 5G bands and multifunction integration necessary for complex mmWave active antenna systems. WIN’s advanced GaAs platforms integrate best-in-class transmit and receive amplifier technologies with high performance switch, logic and ESD protection functions to realize compact high performance, single chip, front-ends for mobile devices and MIMO access points operating in the sub-6GHz and mmWave 5G bands.

WIN Semiconductors’ innovative GaAs technologies, such as PIH1-10, can now monolithically integrate a high efficiency Tx power amplifier (PA), ultra-low Fmin Rx low-noise amplifier (LNA) and low loss PIN switch in a single chip mmWave front-end. In addition, this highly integrated GaAs technology provides optional linear Schottky diodes for power detectors and mixers, low capacitance PIN diodes for ESD protection and optimized E/D transistors for logic interfaces. This suite of capabilities comes in a humidity-rugged back-end, available with a copper redistribution layer and copper pillar bumps to reduce die size and allow flip chip assembly, enabling GaAs front-ends to fit within 28 and 39 GHz antenna lattice spacing.

GLOBALFOUNDRIES announced this week at its annual Global Technology Conference (GTC), that the company’s mobile-optimized 8SW 300mm RF SOI technology platform has been qualified and is in production. Several clients are currently engaged for this RF SOI process, tailored to accommodate aggressive LTE and Sub-6 GHz standards for front-end module (FEM) applications, including 5G IoT, mobile device and wireless communications.

Leveraging the 300mm RF SOI process, 8SW delivers significant performance, integration and area advantages with up to 70 percent power reduction and 20 percent smaller overall die size compared to the previous generation. The technology enables superior LNAs (low-noise amplifiers) switches and tuners by supplying higher voltage handling and a best-in-class on-resistance (Ron) and off-capacitance (Coff) for reduced insertion loss with high isolation. The optimized RF FEM platform helps designers develop solutions that enable extremely fast downloads, higher quality connections and reliable data connectivity for today’s 4G/LTE Advanced operating frequencies and future sub-6GHz 5G mobile and wireless communication applications.

“GF has now delivered more than 40 billion RF SOI chips for the world’s smart devices, and this latest generation of RF SOI technology is another proof point that we’re poised to meet accelerating global demand for solutions that deliver seamless, reliable data connectivity everywhere,” said Christine Dunbar, vice president of RF business unit at GF. “The mobile market continues to favor RF SOI, and GF’s industry leading, 8SW process in 300 mm manufacturing is specifically designed to help our clients take advantage of more frequency bands that will deliver ultra-reliable communications across high-band LTE and future 5G applications.”

“We are proud to support GF’s new advanced and differentiated 8SW technology on 300mm RF SOI substrates and to continue our long-term strategic engineering and manufacturing collaboration enabling next-generation connectivity solutions,” said Dr. Bernard Aspar, EVP, Soitec. “We are ready to deliver the 300mm RF SOI substrates in high volumes to meet GF clients’ growing market demands.”

“SEH congratulates GF on their 8SW platform. SEH believes 300 mm RF SOI products are an important technology, whose time has come,” Nobuhiko Noto, General Manager of SOI Division at SEH. “SEH has been a long time partner on RF technology and looks forward to supporting GF for their future generations of RF technologies as well. We will continue to be a supplier to the 300 mm RF SOI market as it grows.”

GF’s manufacturing legacy and deep technical expertise in RF SOI process has resulted in more than 40 billion RF SOI chips shipped for next-generation RF-enabled devices.

8SW is manufactured on GF’s 300mm production line at Fab 10 in East Fishkill, N.Y., enabling clients to take advantage of advanced tooling and processes for faster time-to-market with industry-leading RF SOI. Qualified process design kits are available now.

Researchers at the University of Illinois at Chicago have discovered a route to alter boron nitride, a layered 2D material, so that it can bind to other materials, like those found in electronics, biosensors and airplanes, for example. Being able to better-incorporate boron nitride into these components could help dramatically improve their performance.

Treatment with a superacid causes boron nitride layers to separate and become positively charged, allowing for it to interface with other nanoparticles, like gold. Credit: Berry, et al

The scientific community has long been interested in boron nitride because of its unique properties –it is strong, ultrathin, transparent, insulating, lightweight and thermally conductive — which, in theory, makes it a perfect material for use by engineers in a wide variety of applications. However, boron nitride’s natural resistance to chemicals and lack of surface-level molecular binding sites have made it difficult for the material to interface with other materials used in these applications.

UIC’s Vikas Berry and his colleagues are the first to report that treatment with a superacid causes boron nitride layers to separate into atomically thick sheets, while creating binding sites on the surface of these sheets that provide opportunities to interface with nanoparticles, molecules and other 2D nanomaterials, like graphene. This includes nanotechnologies that use boron nitride to insulate nano-circuits.

Their findings are published in ACS Nano, a journal of the American Chemical Society.

“Boron nitride is like a stack of highly sticky papers in a ream, and by treating this ream with chlorosulfonic acid, we introduced positive charges on the boron nitride layers that caused the sheets to repel each other and separate,” said Berry, associate professor and head of chemical engineering at the UIC College of Engineering and corresponding author on the paper.

Berry said that “like magnets of the same polarity,” these positively charged boron nitride sheets repel one another.

“We showed that the positive charges on the surfaces of the separated boron nitride sheets make it more chemically active,” Berry said. “The protonation — the addition of positive charges to atoms — of internal and edge nitrogen atoms creates a scaffold to which other materials can bind.”

Berry said that the opportunities for boron nitride to improve composite materials in next-generation applications are vast.

“Boron and nitrogen are on the left and the right of carbon on the periodic table and therefore, boron-nitride is isostructural and isoelectronic to carbon-based graphene, which is considered a ‘wonder material,'” Berry said. This means these two materials are similar in their atomic crystal structure (isostructural) and their overall electron density (isoelectric), he said.

“We can potentially use this material in all kinds of electronics, like optoelectronic and piezoelectric devices, and in many other applications, from solar-cell passivation layers, which function as filters to absorb only certain types of light, to medical diagnostic devices,” Berry said.

Oxygen vs. nanochip


September 25, 2018

For the first time ever, an international team of scientists from NUST MISIS, the Hungarian Academy of Sciences, the University of Namur (Belgium), and Korea Research Institute for Standards & Science has managed to trace in details the structural changes of two-dimensional molybdenum disulfide under long-term environmental impact. The new data narrows the scope of its potential application in microelectronics and at the same time opens up new prospects for the use of two-dimensional materials as catalysts. The research results have been published in the international scientific journal Nature Chemistry.

Pavel Sorokin, head of the research team and leading researcher at the NUST MISIS Laboratory of Inorganic Nanomaterials. Credit: Sergey Gnuskov/NUST MISIS

Molybdenum disulfide (MoS2) is considered a promising basis for a variety of ultra-small electronic devices such as high-frequency detectors, rectifiers, and transistors, so research teams around the world are actively studying its two-dimensional format, nanofilm. However, the new research conducted by NUST MISIS scientists has demonstrated that when this two-dimensional material is significantly oxidized in air, it turns into another connection.

Any electronic device using MoS2, without proper protection would simply stop working relatively quickly. To potentially use MoS2 in microelectronics, the devices would have to be encapsulated.

«For the first time ever, we have managed to experimentally prove that a single-layer molybdenum disulfide strongly degrades under environmental conditions, oxidizing and turning into a solid solution MoS2-xOx,. The functions of a two-dimensional semiconductor without defects and losses can be implemented with molybdenum diselenides, another material with a similar structure», said Pavel Sorokin, head of the research team and leading researcher at the NUST MISIS Laboratory of Inorganic Nanomaterials.

In the experiments, two-dimensional layers of molybdenum disulfide obtained as a result of the stratification of molybdenum disulfide crystals by ultrasound, were maintained in environmental conditions at normal room temperature and lighting for long periods (more than a year and a half), during which scientists observed the changes in the structure of its surface.

«Thanks to the use of tunneling microscopy, we were able to track the structural changes of crystals of two-dimensional sulfur disulfide at the atomic level during long-term exposure to environmental conditions. We have discovered that the material previously considered stable is actually subject to spontaneous oxidation, but at the same time, the original crystal structure of MoS2 monolayers retains formations of MoS2-xOx solid solutions. Our simulations have allowed us to propose a mechanism of forming such solid solutions, and the results of the theoretical calculations are in complete agreement with our experimental measurements» – said Zakhar Popov, one of the co-authors of the study and a senior researcher at the NUST MISIS Laboratory of Inorganic Nanomaterials.

«The study’s second key discovery is the new material that the monolayer of the molybdenum disulfide turns into is a two-dimensional crystal of a solid solution MoS2-xOx, which is an effective catalyst for electromechanical processes», concluded Sorokin.

The Semiconductor Industry Association (SIA), in collaboration with the Semiconductor Research Corporation (SRC), today announced the winners of its 2018 University Research Awards: Dr. Judy Hoyt, professor of electrical engineering and computer science at the Massachusetts Institute of Technology (MIT), and Dr. Naresh Shanbhag, professor of electrical and computer engineering at the University of Illinois at Urbana-Champaign. Professors Hoyt and Shanbhag will receive the awards in conjunction with the SIA Annual Award Dinner on Nov. 29, 2018 in San Jose, Calif.

“Research is the lifeblood of innovation, spurring new technologies that drive growth in the semiconductor industry and throughout the U.S. economy,” said John Neuffer, president and CEO of SIA, which represents U.S. leadership in semiconductor manufacturing, design, and research. “Throughout their distinguished careers, Professors Hoyt and Shanbhag have advanced groundbreaking scientific research, driven breakthroughs in semiconductor technology, and helped strengthen America’s global technological leadership. We are pleased to recognize Dr. Hoyt and Dr. Shanbhag for their tremendous accomplishments.”

Neuffer also highlighted the importance of government investments in semiconductor research funded through agencies such as the National Science Foundation, the National Institute of Standards and Technology, the U.S. Department of Energy, and the Defense Department’s Defense Advanced Research Projects Agency. He expressed SIA’s readiness to work with the Trump administration and Congress to prioritize these investments in scientific research.

“The University Research Award was established to recognize lifetime achievements in semiconductor research by university faculty,” said Ken Hansen, president & CEO of SRC. “Drs. Shanbhag and Hoyt have repeatedly advanced the state-of-the-art semiconductor design and technology in their respective fields. These esteemed professors’ influence on their students has produced new leaders and contributors in the semiconductor industry. The research output from universities tackling industry relevant challenges plays an integral role in next-generation innovations. It is with great appreciation and admiration that the entire SRC team congratulates Dr. Shanbhag and Dr. Hoyt.”

Dr. Hoyt will receive the honor for excellence in semiconductor technology research. She is being recognized for her contributions in pioneering development of strained Si MOSFET devices. Dr. Hoyt’s work helped to break the 10nm barrier and is broadly adopted by companies such as Intel, TSMC, IBM, and others. From 1988-1999, Dr. Hoyt was a senior research scientist in electrical engineering at Stanford University. In January 2000, she joined the faculty at MIT in the Department of Electrical Engineering and Computer Science. She currently serves as associate director within the Microsystems Technology Laboratories (MTL). Dr. Hoyt received a Ph.D. in Applied Physics from Stanford University.

Dr. Shanbhag will receive the award for excellence in semiconductor design research. Specifically, he is being honored for pioneering an Information-Theoretic approach for computing by fusing Claude Shannon’s theory for communications with Turing machines. After designing DSL chip-sets at AT&T Bell Laboratories (1993-1995), he joined the faculty at the University of Illinois at Urbana-Champaign in the Department of Electrical and Computer Engineering where he now holds the Jack S. Kilby Professorship. He co-founded Intersymbol Communications, Inc., and served as CTO (2000-2007), bringing electronic dispersion compensation chip-sets for OC-192 ultra long-haul fiber optic links. In January 2013, Dr. Shanbhag became the founding director of the Systems On Nanoscale Information fabriCs (SONIC) Center, a five-year, multi-university center funded by DARPA and SRC. Dr. Shanbhag received a Ph.D. from the University of Minnesota in Electrical Engineering.

The ability of metallic or semiconducting materials to absorb, reflect and act upon light is of primary importance to scientists developing optoelectronics – electronic devices that interact with light to perform tasks. Rice University scientists have now produced a method to determine the properties of atom-thin materials that promise to refine the modulation and manipulation of light.

Rice University researchers modeled two-dimensional materials to quantify how they react to light. They calculated how the atom-thick materials in single or stacked layers would transmit, absorb and reflect light. The graphs above measure the maximum absorbance of several of the 55 materials tested. Credit: Yakobson Research Group/Rice University

Two-dimensional materials have been a hot research topic since graphene, a flat lattice of carbon atoms, was identified in 2001. Since then, scientists have raced to develop, either in theory or in the lab, novel 2D materials with a range of optical, electronic and physical properties.

Until now, they have lacked a comprehensive guide to the optical properties those materials offer as ultrathin reflectors, transmitters or absorbers.

The Rice lab of materials theorist Boris Yakobson took up the challenge. Yakobson and his co-authors, graduate student and lead author Sunny Gupta, postdoctoral researcher Sharmila Shirodkar and research scientist Alex Kutana, used state-of-the-art theoretical methods to compute the maximum optical properties of 55 2D materials.

“The important thing now that we understand the protocol is that we can use it to analyze any 2D material,” Gupta said. “This is a big computational effort, but now it’s possible to evaluate any material at a deeper quantitative level.”

Their work, which appears this month in the American Chemical Society journal ACS Nano, details the monolayers’ transmittance, absorbance and reflectance, properties they collectively dubbed TAR. At the nanoscale, light can interact with materials in unique ways, prompting electron-photon interactions or triggering plasmons that absorb light at one frequency and emit it in another.

Manipulating 2D materials lets researchers design ever smaller devices like sensors or light-driven circuits. But first it helps to know how sensitive a material is to a particular wavelength of light, from infrared to visible colors to ultraviolet.

“Generally, the common wisdom is that 2D materials are so thin that they should appear to be essentially transparent, with negligible reflection and absorption,” Yakobson said. “Surprisingly, we found that each material has an expressive optical signature, with a large portion of light of a particular color (wavelength) being absorbed or reflected.”

The co-authors anticipate photodetecting and modulating devices and polarizing filters are possible applications for 2D materials that have directionally dependent optical properties. “Multilayer coatings could provide good protection from radiation or light, like from lasers,” Shirodkar said. “In the latter case, heterostructured (multilayered) films — coatings of complementary materials — may be needed. Greater intensities of light could produce nonlinear effects, and accounting for those will certainly require further research.”

The researchers modeled 2D stacks as well as single layers. “Stacks can broaden the spectral range or bring about new functionality, like polarizers,” Kutana said. “We can think about using stacked heterostructure patterns to store information or even for cryptography.”

Among their results, the researchers verified that stacks of graphene and borophene are highly reflective of mid-infrared light. Their most striking discovery was that a material made of more than 100 single-atom layers of boron — which would still be only about 40 nanometers thick — would reflect more than 99 percent of light from the infrared to ultraviolet, outperforming doped graphene and bulk silver.

There’s a side benefit that fits with Yakobson’s artistic sensibility as well. “Now that we know the optical properties of all these materials – the colors they reflect and transmit when hit with light – we can think about making Tiffany-style stained-glass windows on the nanoscale,” he said. “That would be fantastic!”

A research team comprising members from City University of Hong Kong (CityU), Harvard University and renowned information technologies laboratory has successfully fabricated a tiny on-chip lithium niobate modulator, an essential component for the optoelectronic industry. The modulator is smaller, more efficient with faster data transmission and costs less. The technology is set to revolutionise the industry.

The new tiny modulator drives data at higher speeds and lower costs. Illustration credit: Second Bay Studios/Harvard SEAS

The electro-optic modulator produced in this breakthrough research is only 1 to 2 cm long and its surface area is about 100 times smaller than traditional ones. It is also highly efficient – higher data transmission speed with data bandwidth tripling from 35 GHz to 100 GHz, but with less energy consumption and ultra-low optical losses. The invention will pave the way for future high-speed, low power and cost-effective communication networks as well as quantum photonic computation.

The research project is titled “Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages” and was published in the latest issue of the highly prestigious journal Nature.

Electro-optic modulators are critical components in modern communications. They convert high-speed electronic signals in computational devices such as computers to optical signals before transmitting them through optical fibres. But the existing and commonly used lithium niobate modulators require a high drive voltage of 3 to 5V, which is significantly higher than 1V, a voltage provided by a typical CMOS (complementary metal-oxide-semiconductor) circuitry. Hence an electrical amplifier that makes the whole device bulky, expensive and high energy-consuming is needed.

Dr Wang Cheng, Assistant Professor in the Department of Electronic Engineering at CityU and co-first author of the paper, and the research teams at Harvard University and Nokia Bell Labs have developed a new way to fabricate lithium niobate modulator that can be operated at ultra-high electro-optic bandwidths with a voltage compatible with CMOS.

“In the future, we will be able to put the CMOS right next to the modulator, so they can be more integrated, with less power consumption. The electrical amplifier will no longer be needed,” said Dr Wang.

Thanks to the advanced nano fabrication approaches developed by the team, this modulator can be tiny in size while transmitting data at rates up to 210 Gbit/second, with about 10 times lower optical losses than existing modulators.

“The electrical and optical properties of lithium niobate make it the best material for modulator. But it is very difficult to fabricate in nanoscale, which limits the reduction of modulator size,” Dr Wang explains. “Since lithium niobate is chemically inert, conventional chemical etching does not work well with it. While people generally think physical etching cannot produce smooth surfaces, which is essential for optical transmission, we have proved otherwise with our novel nano fabrication techniques.”

With optical fibres becoming ever more common globally, the size, the performance, the power consumption and the costs of lithium niobate modulators are becoming a bigger factor to consider, especially at a time when the data centres in the information and communications technology (ICT) industry are forecast to be one of the largest electricity users in the world.

This revolutionary invention is now on its way to commercialisation. Dr Wang believes that those who look for modulators with the best performance to transmit data over long distances will be among the first to get in touch with this infrastructure for photonics.

Dr Wang began this research in 2013 when he joined Harvard University as a PhD student at Harvard’s John A. Paulson School of Engineering and Applied Sciences. He recently joined CityU and is looking into its application for the coming 5G communication together with the research team at the State Key Laboratory of Terahertz and Millimeter Waves at CityU.

“Millimetre wave will be used to transmit data in free space, but to and from and within base stations, for example, it can be done in optics, which will be less expensive and less lossy,” he explains. He believes the invention can enable applications in quantum photonics, too.

The RISC-V Foundation, a nonprofit corporation controlled by its members to drive the adoption and implementation of the free and open RISC-V instruction set architecture (ISA), today announced the keynotes for the first annual RISC-V Summit at the Santa Clara Convention Center in Santa Clara, Calif. from Dec. 3-6, 2018.

The Summit, in partnership with Informa’s Knowledge & Networking Division, KNect365, will gather the RISC-V community for a multi-track conference featuring tutorials, exhibitions and networking receptions. Leading technology companies and research institutions will share notable product updates, projects and implementations that accelerate the RISC-V ecosystem and reveal the future path for RISC-V. The initial keynotes for the Summit will be conducted by Antmicro, Facebook, Microchip, NXP, SiFive and Western Digital.

  • Michael Gielda, Vice President Business Development of Antmicro: “Accelerating Innovation: Why Google’s TPU Was Just the Start”
  • Robert Shearer, Director of Silicon Architecture and Modeling of Facebook: “The 100X Problem – How to Redefine Silicon for Augmented Reality”
  • Patrick Johnson, Vice President, Mixed Signal and FPGA Business Units of Microchip: “Enabling the Freedom to Innovate”
  • Rob Oshana, Vice President, Software Engineering of NXP: “Deepening the RISC-V Ecosystem to Drive Industry-Wide Adoption”
  • Yunsup Lee, Chief Technology Officer of SiFive: “Opportunities and Challenges of Building Silicon in the Cloud”
  • Martin Fink, Executive Vice President and Chief Technology Officer of Western Digital: “Unleashing Innovation from Core to Edge”

“This year has been a hallmark one for the RISC-V Foundation,” said Rick O’Connor, executive director of the RISC-V Foundation. “The RISC-V ecosystem is continuing to grow at a rapid pace, surpassing 150 member companies from 25 countries across the world. We’re excited to bring the RISC-V community together at the inaugural RISC-V Summit and end the year continuing the momentum from all the RISC-V milestones that have been achieved thus far.”

“This year has been a hallmark one for the RISC-V Foundation,” said Rick O’Connor, executive director of the RISC-V Foundation. “The RISC-V ecosystem is continuing to grow at a rapid pace, surpassing 150 member companies from 25 countries across the world. We’re excited to bring the RISC-V community together at the inaugural RISC-V Summit and end the year continuing the momentum from all the RISC-V milestones that have been achieved thus far.”

Plessey, a developer of award-winning optoelectronic technology solutions, announces it has placed an order for its next reactor from AIXTRON SE (FSE: AIXA), a global provider of deposition equipment to the semiconductor industry. The AIX G5+ C metal organic chemical vapour deposition (MOCVD) reactor will boost Plessey’s manufacturing capability of gallium nitride on silicon (GaN-on-Si) wafers targeting next-generation microLED applications.

With an automatic cassette-to-cassette (C2C) wafer transfer module, the new AIXTRON reactor will be installed and operational during Q1 of 2019 at Plessey’s 270,000 sq ft fabrication facility located in Plymouth, UK. The AIX G5+ C MOCVD system has two separate chamber set-up options, which enables configurations of 8 x 6in or 5 x 8in GaN-on-Si wafers to be automatically loaded and removed from the system in an enclosed cassette environment. The system will be an addition to the company’s existing metal organic chemical vapour deposition (MOCVD) reactors, also supplied by AIXTRON, which provide configurations of 7 x 6in or 3 x 8in with manual loading.

Productivity is further enhanced by the new reactor’s automated self-cleaning technology, which helps to deliver a very low level of wafer defects by ensuring the reactor is clean on every run, significantly reducing downtime for maintenance. The new equipment also provides faster ramp and cool down along with a high susceptor unload temperature to reduce the recipe time.

The AIX G5+ C reactor will support Plessey’s extensive production roadmap to increase R&D capacity of its monolithic microLEDs based on its proprietary GaN-on-Si technology. Plessey’s microLEDs offer extremely low power, high brightness and very high pixel density to create the potential for disruption in many existing application areas that use conventional display technologies such as LCD and OLED.

Plessey’s mission is to become the world’s leading company developing innovative illuminators for display engines and full-field emissive microLED displays. The complex devices combine very high-density RGB pixel arrays with high-performance CMOS backplanes to produce very high-brightness, low-power, and high-frame-rate image sources for head-mounted displays, and wearable electronics devices for augmented reality and virtual reality systems.

University of Groningen physicists in collaboration with a theoretical physics group from Universität Regensburg have built an optimized bilayer graphene device which displays both long spin lifetimes and electrically controllable spin-lifetime anisotropy. It has the potential for practical applications such as spin-based logic devices. The results were published in Physical Review Letters on 20 September.

The tremendous development of computer systems over the last 60 years has increased their capability enabling them to spread into nearly all aspects of our daily life. The development approach of the last decades has been to miniaturize the elements on a computer chip. This has now reached scales below 100 atoms and is approaching its fundamental limit. Since the increasing range of applications makes higher demands of performance and energy efficiency, new concepts are required which can provide enhanced functionalities.

Spintronics

In this context, researchers are studying the use of spins for the transport and storage of information. Spin is a quantum mechanical property of electrons, which gives them a magnetic moment that could be used to transfer or store information. The field of spin-based electronics (spintronics) has already made its way into the hard drives of computers, and also promises to revolutionize the processing units.

A focus of spintronics research is on optimizing materials for the transport and control of spins. Graphene is an excellent conductor of electron spins, but it is hard to control spins in this material because of their weak interaction with the carbon atoms (the spin-orbit coupling). Previous work by the University of Groningen Physics of Nanodevices group led by Professor Bart van Wees placed graphene in close proximity to a transition metal dichalcogenide, a layered material with a high intrinsic spin-orbit coupling strength. The high spin-orbit coupling strength was transferred to graphene via a short-range interaction at the interface. This made it possible to control the spin currents, but was at the cost of reduced spin life.

Control of spin currents

In the new study, the researchers managed to control spin currents in a graphene bilayer. ‘This was actually predicted in a theoretical paper in 2012, but the technology to measure the effect accurately only became available recently’, explains Christian Leutenantsmeyer, a Ph.D. student in the Van Wees group and first author of the PRL paper. The paper is a collaboration between the Van Wees group and a theoretical physics group from Universität Regensburg in Germany.

The 2012 paper predicted anisotropic spin transport in graphene bilayers as a consequence of spin-orbit coupling in bilayer graphene. Anisotropic spin transport describes the situation in which spins pointing either in or out of the graphene plane are conducted with different efficiencies. This was indeed observed in the devices Leutenantsmeyer and his colleagues produced.

Insight

The spin current could also be controlled using spin-lifetime anisotropy since in-plane spins live much shorter than out-of-plane ones, and could be used in devices to polarize spin currents. Leutenantsmeyer: ‘We found that the strength anisotropy is comparable to graphene/transition metal dichalcogenide devices, but we observed a 100 times larger spin lifetime. We therefore achieved both efficient spin transport and efficient control of spins.’

The work provides insight into the fundamental properties of spin-orbit coupling in bilayer graphene. ‘And furthermore, our findings open up new avenues for the efficient electrical control of spins in high-quality graphene, a milestone for graphene.’