Tag Archives: letter-pulse-tech

Rudolph Technologies, Inc. (NYSE: RTEC) announces new Truebump™ Technology on the Dragonfly™ Inspection System. Truebump Technology provides fast, accurate and repeatable three-dimensional (3D) metrology for all advanced packaging bumping applications, from copper (Cu) pillar, to microbumps, and even large C4 bumps. With the Dragonfly system, the advanced packaging industry now has premier high-volume 2D inspection and 3D bump metrology on a single platform. The first Dragonfly system with Truebump Technology has shipped to a major IC manufacturer in the United States.

“Truebump Technology combines multiple 3D metrology techniques to provide faster, more accurate, and more repeatable measurements of the 3D features that are critical in advanced packaging technologies,” said Matt Wilson, senior director of inspection product management, Rudolph Technologies. “As 2D and 3D dimensions decrease, the tolerances for manufacturing become tighter, and device stacking continues to drive an increase in functionality. Because these 3D connections are so vital for reliability, the bump height measurements need to be absolutely accurate.”

Wilson continued, “A single wafer may contain 50 million bumps, each with multiple data points, creating massive amounts of data. The Dragonfly system’s integrated connection with Discover®analytics software gives users tools to visualize data, correct coplanarity variations, and improve yields.“

Truebump Technology is three times faster and 25 percent more repeatable than Rudolph’s previous generation tool. The Dragonfly system’s high volume throughput combined with industry leading accuracy and repeatability enable further adoption of stacked devices in advanced packaging applications that fuel today’s drive for thinner and lighter products that deliver more capability in a smaller form factor.

UPMEM, a fabless semiconductor startup company, announces UPMEM Processing In-Memory (PIM), the next generation hardware solution for data intensive applications in the datacenter, solving server-level efficiency and performance bottlenecks. UPMEM’s programmer friendly acceleration technology is much awaited for by big data players as Moore’s law is fading away.

“The new generation of data intensive applications can no longer be easily handled by traditional CPUs,” said Gilles Hamou, CEO and co-founder of UPMEM. “Initial benchmarks by our partners validate the game-changing added-value of UPMEM PIM technology, as well as the strong fit of its programming model for a large scope of real world data-intensive applications.”

The PIM chip, integrating UPMEM’s proprietary RISC processors (DRAM Processing Units, DPUs) and main memory (DRAM), is the building block of the first efficient, scalable and programmable acceleration solution for big data applications. Associated with its Software Development Kit, the UPMEM PIM solution can accelerate data-intensive applications in the datacenter servers 20 times, with close to zero additional energy premium. This huge leap opens new horizons for Big Data players, in terms of costs and new services.

“Faster and more efficient data analytics require new datacentric application architectures, positioning compute nearer the data,” said Western Digital iMemory Project leader Robin O’Neill. “The UPMEM Processing In-Memory solution is particularly relevant and highly promising for a variety of data analytics use cases, without dramatic changes to server architectures.”

UPMEM’s innovative technology solves the Memory Wall and the dominant energy cost of data movement between the processor and its main memory in application servers. Thousands of UPMEM in-memory co-processors (DRAM Processing Units, aka DPUs) orchestrated by the main processor, localize most of data processing in the memory chips, while proposing familiar programmability. Besides, the UPMEM solution comes without any disruption of existing server hardware, standardized protocols, programming & compiling schemes, removing any barrier for fast & massive adoption. For instance, the UPMEM solution provides a full DNA mapping and variance analysis in minutes instead of hours, making affordable real-time personalized genomics a reality.

The financing round will enable the company to produce and bring to market its disruptive Processing In-Memory (PIM) chip-based solution. In parallel, UPMEM will accelerate its evaluation programs with top tier global big data customers and IT labs, using available programming and simulation tools.

UPMEM obtained this series A financing from actors engaged in semiconductors and with a strong footprint in Europeand the US: C4Ventures, Partech Ventures, Supernova Invest, Western Digital Capital, Crédit Agricole bank, and entrepreneurs from the data center and micro electronics industry led by Etix CEO Charles-Antoine Beyney. Reza Malekzadeh from Partech Ventures and Charles-Antoine Beyney will join the UPMEM board of directors.

“Data intensive use cases are severally constrained by the Memory Wall issue,” explains Olivier Huez, Partner at C4 Ventures. “We’ve looked far and wide and UPMEM’s founders have built the only company on the market which can address this seamlessly and deliver such an impressive uplift in performance.”

“We are no longer in an era were CPUs and other hardware getting continuously faster would mask the slow speed of inefficient software,” said Reza Malekzadeh, General Partner at Partech Ventures. “UPMEM’s solution addresses the performance needs of modern scale-out applications while preserving datacenter and infrastructure hardware investments.”

“The PIM concept is not new in itself,” said Christophe Desrumaux, Investment Director at Supernova Invest. “But UPMEM brings together a world class team, an innovative patented approach without any hardware compatibility disruption, and a full set of design tools that make it widely adoptable by users.”

Researchers from the National University of Singapore (NUS) have established new findings on the properties of two-dimensional molybdenum disulfide (MoS2), a widely studied semiconductor of the future.

In two separate studies led by Professor Andrew Wee and Assistant Professor Andrivo Rusydi from the Department of Physics at the NUS Faculty of Science, the researchers uncovered the role of oxygen in MoS2, and a novel technique to create multiple tunable, inverted optical band gaps in the material. These novel insights deepen the understanding of the intrinsic properties of MoS2 which could potentially transform its applications in the semiconductor industry.

The studies were published in prestigious scientific journals Physical Review Letters and Nature Communications respectively.

MoS2 – An alternative to graphene

MoS2 is a semiconductor-like material that exhibits desirable electronic and optical properties for the development and enhancement of transistors, photodetectors and solar cells.

Prof Wee explained, “MoS2 holds great industrial importance. With an atomically thin two-dimensional structure and the presence of a 1.8eV energy band gap, MoS2 is a semiconductor that can offer broader applications than graphene which lacks a band gap.”

Presence of oxygen alters the electronic and optical properties of MoS2

In the first study published in Physical Review Letters on 16 August 2017, NUS researchers conducted an in-depth analysis which revealed that the energy storage capacity or dielectric function of MoS2 can be altered using oxygen.

The team observed that MoS2 displayed a higher dielectric function when exposed to oxygen. This new knowledge shed light on how adsorption and desorption of oxygen by MoS2 can be employed to modify its electronic and optical properties to suit different applications. The study also highlights the need for adequate consideration of extrinsic factors that may affect the properties of the material in future research.

The first author of this paper is Dr Pranjal Kumar Gogoi from the Department of Physics at NUS Faculty of Science.

MoS2 can possess two tunable optical band gaps

In the second study published in Nature Communications on 7 September 2017, the team of NUS researchers discovered that as opposed to conventional semiconductors which typically have only one optical band gap, electron doping of MoS2 on gold can create two unusual optical band gaps in the material. In addition, the two optical bandgaps in MoS2 are tunable via a simple, straight forward annealing process.

The research team also identified that the tunable optical band gaps are induced by strong-charge lattice coupling as a result of the electron doping.

The first author of this second paper is Dr Xinmao Yin from the Department of Physics at NUS Faculty of Science.

The research findings from the two studies lend insights to other materials that possess similar structure with MoS2.

“MoS2 falls under a group of material known as the two-dimensional transitional metal dihalcogenides (2D-TMDs) which are of great research interest because of their potential industrial applications. The new knowledge from our studies will assist us in unlocking the possibilities of 2D-TMD-based applications such as the fabrication of 2D-TMD-based field effect transistors,” said Asst Prof Rusydi.

Leveraging the findings of these studies, the researchers will apply similar studies to other 2D-TMDs and to explore different possibilities of generating new, valuable properties in 2D-TMDs that do not exist in nature.

Cadence Design Systems, Inc. (NASDAQ: CDNS) today announced it is delivering a comprehensive automotive IP portfolio for the TSMC 16nm FinFET Compact (16FFC) automotive process technology. This broad IP portfolio enables a host of applications ranging from in-vehicle infotainment, in-cabin electronics, vision subsystems, digital noise reduction and advanced driver assistance system (ADAS) subsystems and is registered in the TSMC9000A program.

The comprehensive IP portfolio incorporates the key IP needed to implement advanced infotainment and ADAS systems on chip (SoCs), and includes the Cadence flagship 4266-speed grade LPDDR4/4X DDR PHY and controllers and PCI Express® 4.0/3.0 (PCIe®4/3) PHY and controllers. This is complemented by subsystems supporting MIPI® D-PHYSM, USB3.1/USB2.0, DisplayPort, Octal SPI/QSPI, UFS and Gigabit Ethernet with TSN.

In order to support cost-effective automotive SoC designs, Cadence IP is area- and power-optimized for the AEC-Q100 Grade 2 temperature range, eliminating the need to carry Grade 1 power and area penalties into cost-sensitive automotive SoC designs. Cadence IP is designed to be ASIL-B ready and ASIL-C/D capable based on end users’ safety goals and safety requirements as outlined in the ISO 26262 standard.

“Renesas has been the world leader in providing automotive computing SoCs for a long time,” said Masahiro Suzuki, vice president of the Automotive Solutions Business Unit, Renesas Electronics Corporation. “We are seeing increased adoption of advanced MCUs in automobiles to accelerate autonomous driving, connected cars and electric vehicles. To address these trends in a timely manner, we have been working with Cadence on the development of physical IP using cutting-edge process nodes. Cadence has delivered advanced solutions for LPDDR4/4X PHY that support the highest LPDDR4 memory speed available in the market.”

“Cadence automotive subsystem solutions have been designed from the ground up to meet the stringent requirements of automotive OEMs and tier 1 suppliers,” said Babu Mandava, Cadence’s senior vice president and general manager, IP Group. “Additionally, Cadence IP is performance optimized for the advanced SoC designs for in-vehicle infotainment and ADAS applications. Through our continued collaboration with TSMC, we’re making it very simple for automotive designers to use the most advanced IP solutions to deliver innovative products to market quickly with confidence that they are compliant with the industry’s latest safety and reliability standards.”

“Cadence has quickly adapted its IP portfolio to support automotive applications for our 16FFC process, enabling accelerated design-ins with major automotive suppliers,” said Suk Lee, TSMC senior director, Design Infrastructure Marketing Division. “Our ongoing collaboration with Cadence has resulted in a robust, comprehensive set of IP that enables today’s complex automotive designs for ADAS applications and infotainment systems.”

Researchers have shown that defects in the molecular structure of perovskites – a material which could revolutionise the solar cell industry – can be “healed” by exposing it to light and just the right amount of humidity.

The international team of researchers demonstrated in 2016 that defects in the crystalline structure of perovskites could be healed by exposing them to light, but the effects were temporary.

Now, an expanded team, from Cambridge, MIT, Oxford, Bath and Delft, have shown that these defects can be permanently healed, which could further accelerate the development of cheap, high-performance perovskite-based solar cells that rival the efficiency of silicon. Their results are reported in the inaugural edition of the journal Joule, published by Cell Press.

The concoction of light with water and oxygen molecules leads to substantial defect-healing in metal halide perovskite semiconductors. Credit: Dr. Matthew T. Klug

The concoction of light with water and oxygen molecules leads to substantial defect-healing in metal halide perovskite semiconductors. Credit: Dr. Matthew T. Klug

Most solar cells on the market today are silicon-based, but since they are expensive and energy-intensive to produce, researchers have been searching for alternative materials for solar cells and other photovoltaics. Perovskites are perhaps the most promising of these alternatives: they are cheap and easy to produce, and in just a few short years of development, perovskites have become almost as efficient as silicon at converting sunlight into electricity.

Despite the potential of perovskites, some limitations have hampered their efficiency and consistency. Tiny defects in the crystalline structure of perovskites, called traps, can cause electrons to get “stuck” before their energy can be harnessed. The easier that electrons can move around in a solar cell material, the more efficient that material will be at converting photons, particles of light, into electricity.

“In perovskite solar cells and LEDs, you tend to lose a lot of efficiency through defects,” said Dr Sam Stranks, who led the research while he was a Marie Curie Fellow jointly at MIT and Cambridge. “We want to know the origins of the defects so that we can eliminate them and make perovskites more efficient.”

In a 2016 paper, Stranks and his colleagues found that when perovskites were exposed to illumination, iodide ions – atoms stripped of an electron so that they carry an electric charge – migrated away from the illuminated region, and in the process swept away most of the defects in that region along with them. However, these effects, while promising, were temporary because the ions migrated back to similar positions when the light was removed.

In the new study, the team made a perovskite-based device, printed using techniques compatible with scalable roll-to-roll processes, but before the device was completed, they exposed it to light, oxygen and humidity. Perovskites often start to degrade when exposed to humidity, but the team found that when humidity levels were between 40 and 50 percent, and the exposure was limited to 30 minutes, degradation did not occur. Once the exposure was complete, the remaining layers were deposited to finish the device.

When the light was applied, electrons bound with oxygen, forming a superoxide that could very effectively bind to electron traps and prevent these traps from hindering electrons. In the accompanying presence of water, the perovskite surface also gets converted to a protective shell. The shell coating removes traps from the surfaces but also locks in the superoxide, meaning that the performance improvements in the perovskites are now long-lived.

“It’s counter-intuitive, but applying humidity and light makes the perovskite solar cells more luminescent, a property which is extremely important if you want efficient solar cells,” said Stranks, who is now based at Cambridge’s Cavendish Laboratory. “We’ve seen an increase in luminescence efficiency from one percent to 89 percent, and we think we could get it all the way to 100 percent, which means we could have no voltage loss – but there’s still a lot of work to be done.”

Researchers examining the flow of electricity through semiconductors have uncovered another reason these materials seem to lose their ability to carry a charge as they become more densely “doped.” Their results, which may help engineers design faster semiconductors in the future, are published online in the journal ACS Nano.

Semiconductors are found in just about every piece of modern electronics, from computers to televisions to your cell phone. They fall somewhere between metals, which conduct electricity very well, and insulators like glass that don’t conduct electricity at all. This moderate conduction property is what allows semiconductors to perform as switches and transistors in electronics.

The most common material for semiconductors is silicon, which is mined from the earth and then refined and purified. But pure silicon doesn’t conduct electricity, so the material is purposely and precisely adulterated by the addition of other substances known as dopants. Boron and phosphorus ions are common dopants added to silicon-based semiconductors that allow them to conduct electricity.

But the amount of dopant added to a semiconductor matters – too little dopant and the semiconductor won’t be able to conduct electricity. Too much dopant and the semiconductor becomes more like a non-conductive insulator.

“There’s a sweet spot when it comes to doping where the right amount allows for the efficient conduction of electricity, but after a certain point, adding more dopants slows down the flow,” says Preston Snee, associate professor of chemistry at the University of Illinois at Chicago and corresponding author on the paper.

“For a long time scientists thought that the reason efficient conduction of electricity dropped off with the addition of more dopants was because these dopants caused the flowing electrons to be deflected away, but we found that there’s also another way too many dopants impede the flow of electricity.”

Snee, UIC chemistry student Asra Hassan, and their colleagues wanted to get a closer look at what happens when electricity flows through a semiconductor.

Using the Advanced Photon Source Argonne National Laboratory, they were able to capture X-ray images of what happens at the atomic level inside a semiconductor. They used tiny chips of cadmium sulfide for their semiconductor “base” and doped them with copper ions. Instead of wiring the tiny chips for electricity, they generated a flow of electrons through the semiconductors by shooting them with a powerful blue laser beam. At the same time, they took very high energy X-ray photos of the semiconductors at millionths of a microsecond apart – which showed what was happening at the atomic level in real time as electrons flowed through the doped semiconductors.

They found that when electrons were flowing through, the copper ions transiently formed bonds with the cadmium sulfate semiconductor base, which is detrimental to conduction.

“This has never been seen before,” said Hassan. “Electrons are still bouncing off dopants, which we knew already, but we now know of this other process that contributes to impeding flow of electricity in over-doped semiconductors.”

The bonding of the dopant ions to the semiconductor base material “causes the current to get stuck at the dopants, which we don’t want in our electronics, especially if we want them to be fast and efficient,” she said. “However, now that we know this is happening inside the material, we can design smarter systems that minimize this effect, which we call ‘charge carrier modulation of dopant bonding’.”

The modern world relies on portable electronic devices such as smartphones, tablets, laptops, cameras or camcorders. Many of these devices are powered by lithium-ion batteries, which could be smaller, lighter, safer and more efficient if the liquid electrolytes they contain were replaced by solids. A promising candidate for a solid-state electrolyte is a new class of materials based on lithium compounds, presented by physicists from Switzerland and Poland.

Commercially available lithium-ion batteries consist of two electrodes connected by a liquid electrolyte. This electrolyte makes it difficult for engineers to reduce the size and weight of the battery, in addition, it is subjected to leakage; the lithium in the exposed electrodes then comes into contact with oxygen in the air and undergoes self-ignition. Boeing’s troubles, which for many months caused a full grounding of Dreamliner flights, are a spectacular example of the problems brought about by the use of modern lithium-ion batteries.

Laboratories have been searching for solid materials capable of replacing liquid electrolytes for years. The most popular candidates include compounds in which lithium ions are surrounded by sulphur or oxygen ions. However, in the journal Advanced Energy Materials, a Swiss-Polish team of scientists has presented a new class of ionic compounds where the charge carriers are lithium ions moving in an environment of amine (NH2) and tetrahydroborate (BH4) ions. The experimental part of the research project was carried out at Empa, the Swiss Federal Laboratories for Materials Science and Technology in Dübendorf, and at the University of Geneva (UG). The person responsible for the theoretical description of the mechanisms leading to the exceptionally high ionic conductivity of the new material was Prof. Zbigniew Lodziana from the Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) in Cracow.

“We were dealing with lithium amide-borohydride, a substance previously regarded as not being too good an ionic conductor. This compound is made by milling two constituents in a ratio of 1 to 3. To date, nobody has ever tested what happens to ionic conductivity when the proportions between these constituents are changed. We were the first to do so and suddenly it turned out that by reducing the number of NH2 groups to a certain limit we could significantly improve the conductivity. It increases so much that it becomes comparable to the conductivity of liquid electrolytes!” says Prof. Lodziana.

The several dozen-fold boost in ionic conductivity of the new material – the effect of a change in the proportion of its constituents – opens up a new, unexplored direction in the search for a candidate for a solid-state electrolyte. Previously, throughout the world, the focus was almost exclusively on changes in the composition of the chemical substance. It has now become apparent that, at the stage of production of the compound, a key role can be played by the proportions themselves of the ingredients used to manufacture them.

“Our lithium amide-borohydride is a representative of a promising new class of solid-state electrolyte materials. However, it will be some time before batteries built on such compounds come into use. For example, there should be no chemical reactions between the electrolyte and the electrodes leading to their degradation. This problem is still waiting for an optimal solution”, comments Prof. Lodziana.

The research prospects are promising. The scientists from Empa, UG and IFJ PAN did not confine themselves to just characterizing the physico-chemical properties of the new material. The compound was used as an electrolyte in a typical Li4Ti5O12 half-cell. The half-cell performed well, in tests of running down and recharging 400 times it proved to be stable. Promising steps have also been taken towards resolving another important issue. The lithium amide-borohydride described in the publication exhibited excellent ionic conductivity only at about 40 °C. In the most recent experiments this has already been lowered to below room temperature.

Theoretically, however, the new material remains a challenge. Hitherto models have been constructed for substances in which the lithium ions move in an atomic environment. In the new material, ions move among light molecules that adjust their orientation to ease the lithium movement.

“In the proposed model, the excellent ionic conductivity is a consequence of the specific construction of the crystalline lattice of the tested material. This network in fact consists of two sub-lattices. It turns out that the lithium ions are present here in the elementary cells of only one sub-lattice. However, the diffusion barrier between the sub-lattices is low. Under appropriate conditions, the ions thus travel to the second, empty sub-lattice, where they can move quite freely,” explains Prof. Lodziana.

The theoretical description presented here explains only some of the observed features of the new material. The mechanisms responsible for its high conductivity are certainly more complex. Their better understanding should significantly accelerate the search for optimal compounds for a solid-state electrolyte and consequently shorten the process of commercialization of new power sources that are most likely to revolutionize portable electronics.

Leti today announced that the European R&D project known as PiezoMAT has developed a pressure-based fingerprint sensor that enables resolution more than twice as high as currently required by the U.S. Federal Bureau of Investigation (FBI).

The project’s proof of concept demonstrates that a matrix of interconnected piezoelectric zinc-oxide (ZnO) nanowires grown on silicon can reconstruct the smallest features of human fingerprints at 1,000 dots per inch (DPI).

“The pressure-based fingerprint sensor derived from the integration of piezo-electric ZnO nanowires grown on silicon opens the path to ultra-high resolution fingerprint sensors, which will be able to reach resolution much higher than 1,000 DPI,” said Antoine Viana, Leti’s project manager. “This technology holds promise for significant improvement in both security and identification applications.”

The eight-member project team of European companies, universities and research institutes fabricated a demonstrator embedding a silicon chip with 250 pixels, and its associated electronics for signal collection and post-processing. The chip was designed to demonstrate the concept and the major technological achievements, not the maximum potential nanowire integration density. Long-term development will pursue full electronics integration for optimal sensor resolution.

 

The project also provided valuable experience and know-how in several key areas, such as optimization of seed-layer processing, localized growth of well-oriented ZnO nanowires on silicon substrates, mathematical modeling of complex charge generation, and synthesis of new polymers for encapsulation. The research and deliverables of the project have been presented in scientific journals and at conferences, including Eurosensors 2016 in Budapest.

The 44-month, €2.9 million PiezoMAT (PIEZOelectric nanowire MATrices) research project was funded by the European Commission in the Seventh Framework Program. Its partners include:

  • Leti (Grenoble, France): A leading European center in the field of microelectronics, microtechnology and nanotechnology R&D, Leti is one of the three institutes of the Technological Research Division at CEA, the French Alternative Energies and Atomic Energy Commission. Leti’s activities span basic and applied research up to pilot industrial lines. www.leti-cea.com/cea-tech/leti/english 
  • Fraunhofer IAF (Freiburg, Germany): Fraunhofer IAF, one of the leading research facilities worldwide in the field of III-V semiconductors, develops electronic and optical devices based on modern micro- and nanostructures. Fraunhofer IAF’s technologies find applications in areas such as security, energy, communication, health, and mobility. www.iaf.fraunhofer.de/en
  • Centre for Energy Research, Hungarian Academy of Sciences (Budapest, Hungary):  The Institute for Technical Physics and Materials Science, one of the institutes of the Research Centre, conducts interdisciplinary research on complex functional materials and nanometer-scale structures, exploration of physical, chemical, and biological principles, and their exploitation in integrated micro- and nanosystems www.mems.hu, www.energia.mta.hu/en
  • Universität Leipzig (Leipzig, Germany): Germany’s second-oldest university with continuous teaching, established in 1409, hosts about 30,000 students in liberal arts, medicine and natural sciences. One of its scientific profiles is “Complex Matter”, and contributions to PIEZOMAT are in the field of nanostructures and wide gap materials. www.zv.uni-leipzig.de/en/
  • Kaunas University of Technology (Kaunas, Lithuania): One of the largest technical universities in the Baltic States, focusing its R&D activities on novel materials, smart devices, advanced measurement techniques and micro/nano-technologies. The Institute of Mechatronics specializes on multi-physics simulation and dynamic characterization of macro/micro-scale transducers with well-established expertise in the field of piezoelectric devices. http://en.ktu.lt/ 
  • SPECIFIC POLYMERS (Castries, France): SME with twelve employees and an annual turnover of about 1M€, SPECIFIC POLYMERS acts as an R&D service provider and scale-up producer in the field of functional polymers with high specificity (>1000 polymers in catalogue; >500 customers; >50 countries). www.specificpolymers.fr/
  • Tyndall National Institute (Cork, Ireland): Tyndall National Institute is one of Europe’s leading research centres in Information and Communications Technology (ICT) research and development and the largest facility of its type in Ireland. The Institute employs over 460 researchers, engineers and support staff, with a full-time graduate cohort of 135 students. With a network of 200 industry partners and customers worldwide, Tyndall generates around €30M income each year, 85% from competitively won contracts nationally and internationally. Tyndall is a globally leading Institute in its four core research areas of Photonics, Microsystems, Micro/Nanoelectronics and Theory, Modeling and Design. www.tyndall.ie/
  • OT-Morpho (Paris, France): OT-Morpho is a world leader in digital security & identification technologies with the ambition to empower citizens and consumers alike to interact, pay, connect, commute, travel and even vote in ways that are now possible in a connected world. As our physical and digital, civil and commercial lifestyles converge, OT-Morpho stands precisely at that crossroads to leverage the best in security and identity technologies and offer customized solutions to a wide range of international clients from key industries, including Financial services, Telecom, Identity, Security and IoT. With close to €3bn in revenues and more than 14,000 employees, OT-Morpho is the result of the merger between OT (Oberthur Technologies) and Safran Identity & Security (Morpho) completed in 31 May 2017. Temporarily designated by the name “OT-Morpho”, the new company will unveil its new name in September 2017. For more information, visit www.morpho.com and www.oberthur.com

To perpetuate the pace of innovation and progress in microelectronics technology over the past half-century, it will take an enormous village rife with innovators. This week, about 100 of those innovators throughout the broader technology ecosystem, including participants from the military, commercial, and academic sectors, gathered at DARPA headquarters at the kickoff meeting for the Agency’s new CHIPS program, known in long form as the Common Heterogeneous Integration and Intellectual Property (IP) Reuse Strategies program.

Many future microelectronics systems could be assembled with a library of plug-and-play chiplets that combine their respective modular functions with unprecedented versatility.

Many future microelectronics systems could be assembled with a library of plug-and-play chiplets that combine their respective modular functions with unprecedented versatility.

“Now we are moving beyond pretty pictures and mere words, and we are rolling up our sleeves to do the hard work it will take to change the way we think about, design, and build our microelectronic systems,” said Dan Green, the CHIPS program manager. The crux of the program is to develop a new technological framework in which different functionalities and blocks of intellectual property—among them data storage, computation, signal processing, and managing the form and flow of data—can be segregated into small chiplets, which then can be mixed, matched, and combined onto an interposer, somewhat like joining the pieces of a jigsaw puzzle. Conceivably an entire conventional circuit board with a variety of different but full-sized chips could be shrunk down onto a much smaller interposer hosting a huddle of yet far smaller chiplets.

Central to the design and intention of the program is the creation of a new community of researchers and technologists that mix-and-match mindsets, skillsets, technological strengths, and business interests. That is why the dozen selected prime contractors for the program include large defense companies (Lockheed Martin, Northrop Grumman, and Boeing), large microelectronics companies (Intel, Micron, and Cadence Design Systems), other semiconductor design players (Synopsys, Intrinsix Corp., and Jariet Technologies), and university teams (University of Michigan, Georgia Institute of Technology, and North Carolina State University). What’s more, many of these prime contractors will be working with additional partners who will extend the village of innovators working on the CHIPS program.

“If the CHIPS program is successful, we will gain access to a wider variety of specialized blocks that we will be able to integrate into our systems more easily and with lower costs,” said Green. “This should be a win for both the commercial and defense sectors.”

Among the specific technologies that could emerge from this newly formed research community are compact replacements for entire circuit boards, ultrawideband radio frequency (RF) systems, which require tight integration of fast data converters with powerful processing functions, and, by combining chiplets that provide different accelerator and processor functions, fast-learning systems for teasing out interesting and actionable data from much larger volumes of mundane data. “By bringing the best design capabilities, reconfigurable circuit fabrics, and accelerators from the commercial domain, we should be able to create defense systems just by adding smaller specialized chiplets,” said Bill Chappell, director of DARPA’s Microsystems Technology Office.

“The CHIPS program is part of DARPA’s much larger effort, the Electronics Resurgence Initiative, in which we are striving to build an electronics community that mixes the best of the commercial and defense capabilities for national defense,” Chappell said. “The ERI, which will involve roughly $200 million annual investments for the next four years, will nurture research in materials, device designs, and circuit and system architecture. The next round of investments are expected this September as part of the broader initiative.”

Packing tiny solar cells together, like micro-lenses in the compound eye of an insect, could pave the way to a new generation of advanced photovoltaics, say Stanford University scientists.

In a new study, the Stanford team used the insect-inspired design to protect a fragile photovoltaic material called perovskite from deteriorating when exposed to heat, moisture or mechanical stress. The results are published in the journal Energy & Environmental Science (E&ES).

A compound solar cell illuminated from a light source below. Hexagonal scaffolds are visible in the regions coated by a silver electrode. The new solar cell design could help scientists overcome a major roadblock to the development of perovskite photovoltaics. Credit: Dauskardt Lab/Stanford University

A compound solar cell illuminated from a light source below. Hexagonal scaffolds are visible in the regions coated by a silver electrode. The new solar cell design could help scientists overcome a major roadblock to the development of perovskite photovoltaics. Credit: Dauskardt Lab/Stanford University

“Perovskites are promising, low-cost materials that convert sunlight to electricity as efficiently as conventional solar cells made of silicon,” said Reinhold Dauskardt, a professor of materials science and engineering and senior author of the study. “The problem is that perovskites are extremely unstable and mechanically fragile. They would barely survive the manufacturing process, let alone be durable long-term in the environment.”

Most solar devices, like rooftop panels, use a flat, or planar, design. But that approach doesn’t work well with perovskite solar cells.

“Perovskites are the most fragile materials ever tested in the history of our lab,” said graduate student Nicholas Rolston, a co-lead author of the E&ES study. “This fragility is related to the brittle, salt-like crystal structure of perovskite, which has mechanical properties similar to table salt.”

Eye of the fly

To address the durability challenge, the Stanford team turned to nature.

“We were inspired by the compound eye of the fly, which consists of hundreds of tiny segmented eyes,” Dauskardt explained. “It has a beautiful honeycomb shape with built-in redundancy: If you lose one segment, hundreds of others will operate. Each segment is very fragile, but it’s shielded by a scaffold wall around it.”

Using the compound eye as a model, the researchers created a compound solar cell consisting of a vast honeycomb of perovskite microcells, each encapsulated in a hexagon-shaped scaffold just 0.02 inches (500 microns) wide.

“The scaffold is made of an inexpensive epoxy resin widely used in the microelectronics industry,” Rolston said. “It’s resilient to mechanical stresses and thus far more resistant to fracture.”

Tests conducted during the study revealed that the scaffolding had little effect on the perovskite’s ability to convert light into electricity.

“We got nearly the same power-conversion efficiencies out of each little perovskite cell that we would get from a planar solar cell,” Dauskardt said. “So we achieved a huge increase in fracture resistance with no penalty for efficiency.”

Durability

But could the new device withstand the kind of heat and humidity that conventional rooftop solar panels endure?

To find out, the researchers exposed encapsulated perovskite cells to temperatures of 185 degrees Fahrenheit (85 degrees Celsius) and 85 percent relative humidity for six weeks. Despite these extreme conditions, the cells continued to generate electricity at relatively high rates of efficiency.

Dauskardt and his colleagues have filed a provisional patent for the new technology. To improve efficiency, they are studying new ways to scatter light from the scaffold into the perovskite core of each cell.

“We are very excited about these results,” he said. “It’s a new way of thinking about designing solar cells. These scaffold cells also look really cool, so there are some interesting aesthetic possibilities for real-world applications.”