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The general public might think of the 21st century as an era of revolutionary technological platforms, such as smartphones or social media. But for many scientists, this century is the era of another type of platform: two-dimensional materials, and their unexpected secrets.

When two monolayers of WTe2 are stacked into a bilayer, a spontaneous electrical polarization appears, one layer becoming positively charged and the other negatively charged. This polarization can be flipped by applying an electric field. Credit: Joshua Kahn

These 2-D materials can be prepared in crystalline sheets as thin as a single monolayer, only one or a few atoms thick. Within a monolayer, electrons are restricted in how they can move: Like pieces on a board game, they can move front to back, side to side or diagonally — but not up or down. This constraint makes monolayers functionally two-dimensional.

The 2-D realm exposes properties predicted by quantum mechanics — the probability-wave-based rules that underlie the behavior of all matter. Since graphene — the first monolayer — debuted in 2004, scientists have isolated many other 2-D materials and shown that they harbor unique physical and chemical properties that could revolutionize computing and telecommunications, among other fields.

For a team led by scientists at the University of Washington, the 2-D form of one metallic compound — tungsten ditelluride, or WTe2 — is a bevy of quantum revelations. In a paper published online July 23 in the journal Nature, researchers report their latest discovery about WTe2: Its 2-D form can undergo “ferroelectric switching.” They found that when two monolayers are combined, the resulting “bilayer” develops a spontaneous electrical polarization. This polarization can be flipped between two opposite states by an applied electric field.

“Finding ferroelectric switching in this 2-D material was a complete surprise,” said senior author David Cobden, a UW professor of physics. “We weren’t looking for it, but we saw odd behavior, and after making a hypothesis about its nature we designed some experiments that confirmed it nicely.”

Materials with ferroelectric properties can have applications in memory storage, capacitors, RFID card technologies and even medical sensors.

“Think of ferroelectrics as nature’s switch,” said Cobden. “The polarized state of the ferroelectric material means that you have an uneven distribution of charges within the material — and when the ferroelectric switching occurs, the charges move collectively, rather as they would in an artificial electronic switch based on transistors.”

The UW team created WTe2 monolayers from its the 3-D crystalline form, which was grown by co-authors Jiaqiang Yan at Oak Ridge National Laboratory and Zhiying Zhao at the University of Tennessee, Knoxville. Then the UW team, working in an oxygen-free isolation box to prevent WTe2 from degrading, used Scotch Tape to exfoliate thin sheets of WTe2 from the crystal — a technique widely used to isolate graphene and other 2-D materials. With these sheets isolated, they could measure their physical and chemical properties, which led to the discovery of the ferroelectric characteristics.

WTe2 is the first exfoliated 2-D material known to undergo ferroelectric switching. Before this discovery, scientists had only seen ferroelectric switching in electrical insulators. But WTe2 isn’t an electrical insulator; it is actually a metal, albeit not a very good one. WTe2 also maintains the ferroelectric switching at room temperature, and its switching is reliable and doesn’t degrade over time, unlike many conventional 3-D ferroelectric materials, according to Cobden. These characteristics may make WTe2 a promising material for smaller, more robust technological applications than other ferroelectric compounds.

“The unique combination of physical characteristics we saw in WTe2 is a reminder that all sorts of new phenomena can be observed in 2-D materials,” said Cobden.

Ferroelectric switching is the second major discovery Cobden and his team have made about monolayer WTe2. In a 2017 paper in Nature Physics, the team reported that this material is also a “topological insulator,” the first 2-D material with this exotic property.

In a topological insulator, the electrons’ wave functions — mathematical summaries of their quantum mechanical states — have a kind of built-in twist. Thanks to the difficulty of removing this twist, topological insulators could have applications in quantum computing — a field that seeks to exploit the quantum-mechanical properties of electrons, atoms or crystals to generate computing power that is exponentially faster than today’s technology. The UW team’s discovery also stemmed from theories developed by David J. Thouless, a UW professor emeritus of physics who shared the 2016 Nobel Prize in Physics in part for his work on topology in the 2-D realm.

Cobden and his colleagues plan to keep exploring monolayer WTe2 to see what else they can learn.

“Everything we have measured so far about WTe2 has some surprise in it,” said Cobden. “It’s exciting to think what we might find next.”

Scientists are experimenting with narrow strips of graphene, called nanoribbons, in hopes of making cool new electronic devices, but University of California, Berkeley scientists have discovered another possible role for them: as nanoscale electron traps with potential applications in quantum computers.

This is a scanning tunneling microscope image of a topological nanoribbon superlattice. Electrons are trapped at the interfaces between wide ribbon segments (which are topologically non-trivial) and narrow ribbon segments (which are topologically trivial). The wide segments are 9 carbon atoms across (1.65 nanometers) while the narrow segments are only 7 carbon atoms across (1.40 nanometers). Credit: Michael Crommie, Felix Fischer, UC Berkeley

Graphene, a sheet of carbon atoms arranged in a rigid, honeycomb lattice resembling chicken wire, has interesting electronic properties of its own. But when scientists cut off a strip less than about 5 nanometers in width – less than one ten-thousandth the width of a human hair – the graphene nanoribbon takes on new quantum properties, making it a potential alternative to silicon semiconductors.

UC Berkeley theoretician Steven Louie, a professor of physics, predicted last year that joining two different types of nanoribbons could yield a unique material, one that immobilizes single electrons at the junction between ribbon segments.

In order to accomplish this, however, the electron “topology” of the two nanoribbon pieces must be different. Topology here refers to the shape that propagating electron states adopt as they move quantum mechanically through a nanoribbon, a subtle property that had been ignored in graphene nanoribbons until Louie’s prediction.

Two of Louie’s colleagues, chemist Felix Fischer and physicist Michael Crommie, became excited by his idea and the potential applications of trapping electrons in nanoribbons and teamed up to test the prediction. Together they were able to experimentally demonstrate that junctions of nanoribbons having the proper topology are occupied by individual localized electrons.

A nanoribbon made according to Louie’s recipe with alternating ribbon strips of different widths, forming a nanoribbon superlattice, produces a conga line of electrons that interact quantum mechanically. Depending on the strips’ distance apart, the new hybrid nanoribbon is either a metal, a semiconductor or a chain of qubits, the basic elements of a quantum computer.

“This gives us a new way to control the electronic and magnetic properties of graphene nanoribbons,” said Crommie, a UC Berkeley professor of physics. “We spent years changing the properties of nanoribbons using more conventional methods, but playing with their topology gives us a powerful new way to modify the fundamental properties of nanoribbons that we never suspected existed until now.”

Louie’s theory implies that nanoribbons are topological insulators: unusual materials that are insulators, that is, non-conducting in the interior, but metallic conductors along their surface. The 2016 Nobel Prize in Physics was awarded to three scientists who first used the mathematical principles of topology to explain strange, quantum states of matter, now classified as topological materials.

Three-dimensional topological insulators conduct electricity along their sides, sheets of 2D topological insulators conduct electricity along their edges, and these new 1D nanoribbon topological insulators have the equivalent of zero-dimensional (0D) metals at their edges, with the caveat that a single 0D electron at a ribbon junction is confined in all directions and can’t move anywhere. If another electron is similarly trapped nearby, however, the two can tunnel along the nanoribbon and meet up via the rules of quantum mechanics. And the spins of adjacent electrons, if spaced just right, should become entangled so that tweaking one affects the others, a feature that is essential for a quantum computer.

The synthesis of the hybrid nanoribbons was a difficult feat, said Fischer, a UC Berkeley professor of chemistry. While theoreticians can predict the structure of many topological insulators, that doesn’t mean that they can be synthesized in the real world.

“Here you have a very simple recipe for how to create topological states in a material that is very accessible,” Fischer said. “It is just organic chemistry. The synthesis is not trivial, granted, but we can do it. This is a breakthrough in that we can now start thinking about how to use this to achieve new, unprecedented electronic structures.”

The researchers will report their synthesis, theory and analysis in the Aug. 9 issue of the journal Nature. Louie, Fischer and Crommie are also faculty scientists at Lawrence Berkeley National Laboratory.

Knitting nanoribbons together

Louie, who specializes in the quantum theory of unusual forms of matter, from superconductors to nanostructures, authored a 2017 paper that described how to make graphene nanoribbon junctions that take advantage of the theoretical discovery that nanoribbons are 1D topological insulators. His recipe required taking so-called topologically trivial nanoribbons and pairing them with topologically non-trivial nanoribbons, where Louie explained how to tell the difference between the two by looking at the shape of the quantum mechanical states that are adopted by electrons in the ribbons.

Fischer, who specializes in synthesizing and characterizing unusual nanomolecules, discovered a new way to make atomically precise nanoribbon structures that would exhibit these properties from complex carbon compounds based on anthracene.

Working side by side, Fischer’s and Crommie’s research teams then built the nanoribbons on top of a gold catalyst heated inside a vacuum chamber, and Crommie’s team used a scanning tunneling microscope to confirm the electronic structure of the nanoribbon. It perfectly matched Louie’s theory and calculations. The hybrid nanoribbons they made had between 50 and 100 junctions, each occupied by an individual electron able to quantum mechanically interact with its neighbors.

“When you heat the building blocks, you get a patchwork quilt of molecules knitted together into this beautiful nanoribbon,” Crommie said. “But because the different molecules can have different structures, the nanoribbon can be designed to have interesting new properties.”

Fischer said that the length of each segment of nanoribbon can be varied to change the distance between trapped electrons, thus changing how they interact quantum mechanically. When close together the electrons interact strongly and split into two quantum states (bonding and anti-bonding) whose properties can be controlled, allowing the fabrication of new 1D metals and insulators. When the trapped electrons are slightly more separated, however, they act like small, quantum magnets (spins) that can be entangled and are ideal for quantum computing.

“This provides us with a completely new system that alleviates some of the problems expected for future quantum computers, such as how to easily mass-produce highly precise quantum dots with engineered entanglement that can be incorporated into electronic devices in a straightforward way,” Fischer said.

Co-lead authors of the paper are Daniel Rizzo and Ting Cao from the Department of Physics and Gregory Veber from the Department of Chemistry, along with their colleagues Christopher Bronner, Ting Chen, Fangzhou Zhao and Henry Rodriguez. Fischer and Crommie are both members of the Kavli Energy NanoSciences Institute at UC Berkeley and Berkeley Lab.

The research was supported by the Office of Naval Research, Department of Energy, Center for Energy Efficient Electronics Science and National Science Foundation.

Rice University researchers have found that fracture-resistant “rebar graphene” is more than twice as tough as pristine graphene.

Rice University graduate student Emily Hacopian holds the platform she used to study the strength of rebar graphene under a microscope. Hacopian and colleagues discovered that reinforcing graphene with carbon nanotubes makes the material twice as tough. Credit: Jeff Fitlow/Rice University

Graphene is a one-atom-thick sheet of carbon. On the two-dimensional scale, the material is stronger than steel, but because graphene is so thin, it is still subject to ripping and tearing.

Rebar graphene is the nanoscale analog of rebar (reinforcement bars) in concrete, in which embedded steel bars enhance the material’s strength and durability. Rebar graphene, developed by the Rice lab of chemist James Tour in 2014, uses carbon nanotubes for reinforcement.

In a new study in the American Chemical Society journal ACS Nano, Rice materials scientist Jun Lou, graduate student and lead author Emily Hacopian and collaborators, including Tour, stress-tested rebar graphene and found that nanotube rebar diverted and bridged cracks that would otherwise propagate in unreinforced graphene.

The experiments showed that nanotubes help graphene stay stretchy and also reduce the effects of cracks. That could be useful not only for flexible electronics but also electrically active wearables or other devices where stress tolerance, flexibility, transparency and mechanical stability are desired, Lou said.

Both the lab’s mechanical tests and molecular dynamics simulations by collaborators at Brown University revealed the material’s toughness.

Graphene’s excellent conductivity makes it a strong candidate for devices, but its brittle nature is a downside, Lou said. His lab reported two years ago that graphene is only as strong as its weakest link. Those tests showed the strength of pristine graphene to be “substantially lower” than its reported intrinsic strength. In a later study, the lab found molybdenum diselenide, another two-dimensional material of interest to researchers, is also brittle.

Tour approached Lou and his group to carry out similar tests on rebar graphene, made by spin-coating single-walled nanotubes onto a copper substrate and growing graphene atop them via chemical vapor deposition.

To stress-test rebar graphene, Hacopian, Yang and colleagues had to pull it to pieces and measure the force that was applied. Through trial and error, the lab developed a way to cut microscopic pieces of the material and mount it on a testbed for use with scanning electron and transmission electron microscopes.

“We couldn’t use glue, so we had to understand the intermolecular forces between the material and our testing devices,” Hacopian said. “With materials this fragile, it’s really difficult.”

Rebar didn’t keep graphene from ultimate failure, but the nanotubes slowed the process by forcing cracks to zig and zag as they propagated. When the force was too weak to completely break the graphene, nanotubes effectively bridged cracks and in some cases preserved the material’s conductivity.

In earlier tests, Lou’s lab showed graphene has a native fracture toughness of 4 megapascals. In contrast, rebar graphene has an average toughness of 10.7 megapascals, he said.

Simulations by study co-author Huajian Gao and his team at Brown confirmed results from the physical experiments. Gao’s team found the same effects in simulations with orderly rows of rebar in graphene as those measured in the physical samples with rebar pointing every which way.

“The simulations are important because they let us see the process on a time scale that isn’t available to us with microscopy techniques, which only give us snapshots,” Lou said. “The Brown team really helped us understand what’s happening behind the numbers.”

He said the rebar graphene results are a first step toward the characterization of many new materials. “We hope this opens a direction people can pursue to engineer 2D material features for applications,” Lou said.

Entegris, Inc. (NASDAQ: ENTG) today released the next generation EUV 1010 Reticle Pod for high-volume IC manufacturing using extreme ultraviolet (EUV) lithography. Developed in close collaboration with ASML, one of the world’s largest manufacturers of chip-making equipment, Entegris’s EUV 1010 is the first to be qualified by ASML for use in the NXE:3400B and beyond.

As the semiconductor industry begins ramping EUV lithography for the high-volume manufacturing (HVM) of advanced technology nodes, keeping EUV reticles defect-free is more demanding than ever.  Entegris’s EUV 1010 Reticle Pod is now fully qualified by ASML for their latest generation scanner having demonstrated outstanding protection of the EUV reticles, including against the most critical particle challenges.  As a result, Entegris’s EUV 1010 enables customers to safely transition to smaller and smaller line widths, as needed for the most advanced lithography processes.

To achieve these levels of performance within the NXE:3400B scanner, Entegris developed new technologies for contacting the reticles and controlling the environment. “The Entegris EUV 1010 represents a significant breakthrough in improving defectivity so customers implementing HVM for advance technology nodes can focus on increasing efficiency and throughput,” said Paul Magoon, vice president of wafer and reticle handing for Entegris. “Development and testing with ASML ensures that EUV 1010 has been qualified for the most advanced EUV scanner available.”

Entegris is ISO 9001 certified and has manufacturing, customer service and/or research facilities in the United States, China, France, Germany, Israel, Japan, Malaysia, Singapore, South Korea and Taiwan.

Scientists at the Florida State University-headquartered National High Magnetic Field Laboratory have discovered a behavior in materials called cuprates that suggests they carry current in a way entirely different from conventional metals such as copper.

The research, published today in the journal Science, adds new meaning to the materials’ moniker, “strange metals.”

Cuprates are high-temperature superconductors (HTS), meaning they can carry current without any loss of energy at somewhat warmer temperatures than conventional, low-temperature superconductors (LTS). Although scientists understand the physics of LTS, they haven’t yet cracked the nut of HTS materials. Exactly how the electrons travel through these materials remains the biggest mystery in the field.

For their research on one specific cuprate, lanthanum strontium copper oxide (LSCO), a team led by MagLab physicist Arkady Shekhter focused on its normal, metallic state — the state from which superconductivity eventually emerges when the temperature dips low enough. This normal state of cuprates is known as a “strange” or “bad” metal, in part because the electrons don’t conduct electricity particularly well.

Scientists have studied conventional metals for more than a century and generally agree on how electricity travels through them. They call the units that carry charge through those metals “quasiparticles,” which are essentially electrons after factoring in their environment. These quasiparticles act nearly independently of each other as they carry electric charge through a conductor.

But does quasiparticle flow also explain how electric current travels in the cuprates? At the National MagLab’s Pulsed Field Facility in Los Alamos, New Mexico, Shekhter and his team investigated the question. They put LSCO in a very high magnetic field, applied a current to it, then measured the resistance.

The resulting data revealed that the current cannot, in fact, travel via conventional quasiparticles, as it does in copper or doped silicon. The normal metallic state of the cuprate, it appeared, was anything but normal.

“This is a new way metals can conduct electricity that is not a bunch of quasiparticles flying around, which is the only well-understood and agreed-upon language so far,” Shekhter said. “Most metals work like that.”

If not by quasiparticles, exactly how is charge being carried in the strange metal phase of LSCO? The data suggests it may be some kind of team effort by the electrons.

Scientists have known for some time about an intriguing behavior of LSCO: In its normal conducting state, resistivity changes linearly with temperature. In other words, as the temperature goes up, LSCO’s resistance to electrical current goes up proportionately, which is not the case in conventional metals.

Shekhter and his colleagues decided to test LSCO’s resistivity, but using magnetic field as a parameter instead of temperature. They put the material in a very powerful magnet and measured resistivity in fields up to 80 teslas. (A hospital MRI magnet, by comparison, generates a field of about 3 teslas). They discovered another case of linear resistivity: As the strength of the magnetic field increased, LSCO’s resistivity went up proportionately.

The fact that the linear-in-field resistivity mirrored so elegantly the previously known linear-in-temperature resistivity of LSCO is highly significant, Shekhter said.

“Usually when you see such things, that means that it’s a very simple principle behind it,” he said.

The finding suggests the electrons seem to cooperate as they move through the material. Physicists have believed for some time that HTS materials exhibit such a “correlated electron behavior” in the superconducting phase, although the precise mechanism is not yet understood.

This new evidence suggests that LSCO in its normal conducting state may also carry current using something other than independent quasiparticles — although it’s not superconductivity, either. What that “something” is, scientists aren’t yet certain. Finding the answer may require a whole new way of looking at the problem.

“Here we have a situation where no existing language can help,” Shekhter said. “We need to find a new language to think about these materials.”

The new research raises plenty of questions and some tantalizing ideas, including ideas about the fundamentally different way in which resistivity could be tuned in cuprates. In conventional metals, explained Shekhter, resistivity can be tuned in multiple ways — imagine a set of dials, any of which could adjust that property.

But in cuprates, Shekhter said, “There is only one dial to adjust resistivity. And both temperature and magnetic field, in their own way, access that one dial.”

Odd, indeed. But from strange metals, one would expect nothing less.

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced Dr. John L. Hennessy, chairman of Alphabet Inc., former president of Stanford University, and pioneer in electrical engineering, has been named the 2018 recipient of SIA’s highest honor, the Robert N. Noyce Award. SIA presents the Noyce Award annually in recognition of a leader who has made outstanding contributions to the semiconductor industry in technology or public policy. Hennessy will accept the award at the SIA Annual Award Dinner on Thursday, Nov. 29, 2018 in San Jose.

“Throughout his outstanding and influential career spanning more than four decades, John Hennessy has helped move the semiconductor industry forward, leading efforts to advance semiconductor technology and train future generations of electrical engineers,” said John Neuffer, president and CEO, Semiconductor Industry Association. “John literally wrote the book on computer architecture design and has spearheaded semiconductor research that has helped make our industry what it is today. On behalf of the SIA board of directors, it is an honor to announce John’s selection as the 2018 Robert N. Noyce Award recipient in recognition of his exceptional accomplishments.”

Hennessy joined Stanford University’s faculty in 1977 as an assistant professor of electrical engineering and rose through the academic ranks to become Stanford’s 10th president, serving in that role from 2000 until his retirement in 2016. In February 2018, Dr. Hennessy was appointed chairman of Alphabet Inc., parent company of Google.

In 1981, Hennessy drew together researchers to focus on a computer architecture known as RISC (Reduced Instruction Set Computer), a technology that has revolutionized the computer industry by increasing performance while reducing costs. Dr. Hennessy helped transfer this technology to industry. In 1984, he cofounded MIPS Computer Systems, which designed microprocessors. In more recent years, his research focused on the architecture of high-performance computers.

Hennessy has lectured and published widely and is the co-author of two internationally used

undergraduate and graduate textbooks on computer architecture design. He earned his bachelor’s degree in electrical engineering from Villanova University and his master’s and doctoral degrees in computer science from the State University of New York at Stony Brook.

“It is a true privilege to be selected for this award, joining a distinguished list of pioneers and icons who have previously received it,” said Hennessy. “Throughout my career, I have been fortunate to work with countless outstanding colleagues, mentors, and friends who have been instrumental in my work every step of the way. It is with them in mind that I gratefully accept this award, and I look forward to continuing to work alongside them to advance the forward march of innovation.”

The Noyce Award is named in honor of semiconductor industry pioneer Robert N. Noyce, co-founder of Fairchild Semiconductor and Intel.

Optical secrets of disulfide nanotubes are disclosed by Lomonosov MSU Scientists

Researchers from the Faculty of Materials Science, Lomonosov Moscow State University (MSU) in close collaboration with Faculty of Physics (MSU), Weizmann Institute of Science (Israel), Tel Aviv University (Israel) and Jozef Stefan Institute (Slovenia) have demonstrated a strong light-matter interaction in suspensions and self-assembled films of tungsten disulfide nanotubes (NT-WS2), which are of the most famous and “oldest” analogues of worldwide renowned carbon nanotubes. The results of the research are published in Physical Chemistry Chemical Physics Journal.

In this work, amazing optical properties of inorganic WS2 nanotubes are studied in details. The main part of the research was carried out under the supervision of Prof. Reshef Tenne (Weizmann Institute of Science, Israel), who discovered tungsten disulfide nanotubes in 1992. Nowadays, NT-WS2 are synthesized in semi-industrial scale and employed in numerous commercial lubricating mixtures as well as laboratory-scale nanocomposites and nanoelectronic devices. However, for a long time, the optical studies of such nanotubes remained controversial. For example, the features manifested in optical extinction spectra of WS2 nanotube suspensions were mistakenly interpreted as the set of excitonic absorption peaks. However, this approach hardly explained both the significant shift of the exciton energies with respect to the bulk WS2 values and the differences in optical extinction spectra of the NT-WS2 suspension and semi-oriented films.

Based on a completely novel complex study of NT-WS2 optical properties, the researchers from Weizmann Institute of Science and Faculty of Materials Science, MSU have demonstrated strong visible and near-infrared light scattering by disulfide nanotubes leading to the masking of excitonic peaks. Importantly, the optical measurements employing an integrating sphere allowed registering “true” absorption signal, which showed that the nanotube excitonic peaks have almost the same energies as for bulk WS2.

More detailed study of the optical extinction and scattering spectra, fortified by finite-difference time-domain (FDTD) simulation and a phenomenological coupled oscillator (PCO) model has shown that NT-WS2 exhibit strong light-matter interaction and form exciton-polaritons. This part of the research was carried out by researchers from Weizmann Institute of Science and the Laboratory of Nanophotonics and Metamaterials, Faculty of Physics, Lomonosov MSU headed by Prof. Andrey A. Fedyanin. It was demonstrated that WS2 nanotubes act as quasi 1-D polaritonic nano-systems and sustain both excitonic features and cavity modes in the visible-near infrared range.

“The findings of this thorough and truly international research allow consideration of tungsten disulfide nanotubes as a platform for developing new concepts in nanotube-based photonic devices. Moreover, the knowledge on such nontrivial optical features of these nanostructures sheds light on the possible light-harvesting properties of the nanocomposites based on disulfide nanotubes and plasmonic nanoparticles (gold or silver) which are extensively developed by young scientists from Faculty of Materials Science, MSU” – said Alexander Polyakov, the co-author of the article.

MIT researchers have designed an optical filter on a chip that can process optical signals from across an extremely wide spectrum of light at once, something never before available to integrated optics systems that process data using light. The technology may offer greater precision and flexibility for designing optical communication and sensor systems, studying photons and other particles through ultrafast techniques, and in other applications.

Optical filters are used to separate one light source into two separate outputs: one reflects unwanted wavelengths — or colors — and the other transmits desired wavelengths. Instruments that require infrared radiation, for instance, will use optical filters to remove any visible light and get cleaner infrared signals.

Existing optical filters, however, have tradeoffs and disadvantages. Discrete (off-chip) “broadband” filters, called dichroic filters, process wide portions of the light spectrum but are large, can be expensive, and require many layers of optical coatings that reflect certain wavelengths. Integrated filters can be produced in large quantities inexpensively, but they typically cover a very narrow band of the spectrum, so many must be combined to efficiently and selectively filter larger portions of the spectrum.

Researchers from MIT’s Research Laboratory of Electronics have designed the first on-chip filter that, essentially, matches the broadband coverage and precision performance of the bulky filters but can be manufactured using traditional silicon-chip fabrication methods.

“This new filter takes an extremely broad range of wavelengths within its bandwidth as input and efficiently separates it into two output signals, regardless of exactly how wide or at what wavelength the input is. That capability didn’t exist before in integrated optics,” says Emir Salih Magden, a former PhD student in MIT’s Department of Electrical Engineering and Computer Science (EECS) and first author on a paper describing the filters published today in Nature Communications.

Paper co-authors along with Magden, who is now an assistant professor of electrical engineering at Koç University in Turkey, are: Nanxi Li, a Harvard University graduate student; and, from MIT, graduate student Manan Raval; former graduate student Christopher V. Poulton; former postdoc Alfonso Ruocco; postdoc associate Neetesh Singh; former research scientist Diedrik Vermeulen; Erich Ippen, the Elihu Thomson Professor in EECS and the Department of Physics; Leslie Kolodziejski, a professor in EECS; and Michael Watts, an associate professor in EECS.

Dictating the flow of light

The MIT researchers designed a novel chip architecture that mimics dichroic filters in many ways. They created two sections of precisely sized and aligned (down to the nanometer) silicon waveguides that coax different wavelengths into different outputs.

Waveguides have rectangular cross-sections typically made of a “core” of high-index material — meaning light travels slowly through it — surrounded by a lower-index material. When light encounters the higher- and lower-index materials, it tends to bounce toward the higher-index material. Thus, in the waveguide light becomes trapped in, and travels along, the core.

The MIT researchers use waveguides to precisely guide the light input to the corresponding signal outputs. One section of the researchers’ filter contains an array of three waveguides, while the other section contains one waveguide that’s slightly wider than any of the three individual ones.

In a device using the same material for all waveguides, light tends to travel along the widest waveguide. By tweaking the widths in the array of three waveguides and gaps between them, the researchers make them appear as a single wider waveguide, but only to light with longer wavelengths. Wavelengths are measured in nanometers, and adjusting these waveguide metrics creates a “cutoff,” meaning the precise nanometer of wavelength above which light will “see” the array of three waveguides as a single one.

In the paper, for instance, the researchers created a single waveguide measuring 318 nanometers, and three separate waveguides measuring 250 nanometers each with gaps of 100 nanometers in between. This corresponded to a cutoff of around 1,540 nanometers, which is in the infrared region. When a light beam entered the filter, wavelengths measuring less than 1,540 nanometers could detect one wide waveguide on one side and three narrower waveguides on the other. Those wavelengths move along the wider waveguide. Wavelengths longer than 1,540 nanometers, however, can’t detect spaces between three separate waveguides. Instead, they detect a massive waveguide wider than the single waveguide, so move toward the three waveguides.

“That these long wavelengths are unable to distinguish these gaps, and see them as a single waveguide, is half of the puzzle. The other half is designing efficient transitions for routing light through these waveguides toward the outputs,” Magden says.

The design also allows for a very sharp roll-off, measured by how precisely a filter splits an input near the cutoff. If the roll-off is gradual, some desired transmission signal goes into the undesired output. Sharper roll-off produces a cleaner signal filtered with minimal loss. In measurements, the researchers found their filters offer about 10 to 70 times sharper roll-offs than other broadband filters.

As a final component, the researchers provided guidelines for exact widths and gaps of the waveguides needed to achieve different cutoffs for different wavelengths. In that way, the filters are highly customizable to work at any wavelength range. “Once you choose what materials to use, you can determine the necessary waveguide dimensions and design a similar filter for your own platform,” Magden says.

Sharper tools

Many of these broadband filters can be implemented within one system to flexibly process signals from across the entire optical spectrum, including splitting and combing signals from multiple inputs into multiple outputs.

This could pave the way for sharper “optical combs,” a relatively new invention consisting of uniformly spaced femtosecond (one quadrillionth of a second) pulses of light from across the visible light spectrum — with some spanning ultraviolet and infrared zones — resulting in thousands of individual lines of radio-frequency signals that resemble “teeth” of a comb. Broadband optical filters are critical in combining different parts of the comb, which reduces unwanted signal noise and produces very fine comb teeth at exact wavelengths.

Because the speed of light is known and constant, the teeth of the comb can be used like a ruler to measure light emitted or reflected by objects for various purposes. A promising new application for the combs is powering “optical clocks” for GPS satellites that could potentially pinpoint a cellphone user’s location down to the centimeter or even help better detect gravitational waves. GPS works by tracking the time it takes a signal to travel from a satellite to the user’s phone. Other applications include high-precision spectroscopy, enabled by stable optical combs combining different portions of the optical spectrum into one beam, to study the optical signatures of atoms, ions, and other particles.

In these applications and others, it’s helpful to have filters that cover broad, and vastly different, portions of the optical spectrum on one device.

“Once we have really precise clocks with sharp optical and radio-frequency signals, you can get more accurate positioning and navigation, better receptor quality, and, with spectroscopy, get access to phenomena you couldn’t measure before,” Magden says.

Scientists have developed the world’s best-performing pure spin current source[1] made of bismuth-antimony (BiSb) alloys, which they report as the best candidate for the first industrial application of topological insulators[2]. The achievement represents a big step forward in the development of spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)[3] devices with the potential to replace existing memory technologies.

A research team led by Pham Nam Hai at the Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (Tokyo Tech), has developed thin films of BiSb for a topological insulator that simultaneously achieves a colossal spin Hall effect[4] and high electrical conductivity.

Table 1: θSH: spin Hall angle, σ: conductivity, σSH: spin Hall conductivity.
The figures in the bottom row are those achieved in the present study. Remarkably, the spin Hall conductivity, shown in the right-hand column, is two orders of magnitude greater than the previous record. Credit: Pham Nam Hai

Their study, published in Nature Materials, could accelerate the development of high-density, ultra-low power, and ultra-fast non-volatile memories for Internet of Things (IoT) and other applications now becoming increasingly in demand for industrial and home use.

The BiSb thin films achieve a colossal spin Hall angle of approximately 52, conductivity of 2.5 x 105 and spin Hall conductivity of 1.3×107 at room temperature. (See Table 1 for a performance summary, including all units.) Notably, the spin Hall conductivity is two orders of magnitude greater than that of bismuth selenide (Bi2Se3), reported in Nature in 2014.

Making SOT-MRAM a viable choice

Until now, the search for suitable spin Hall materials for next-generation SOT-MRAM devices has been faced with a dilemma: First, heavy metals such as platinum, tantalum and tungsten have high electrical conductivity but a small spin Hall effect. Second, topological insulators investigated to date have a large spin Hall effect but low electrical conductivity.

The BiSb thin films satisfy both requirements at room temperature. This raises the real possibility that BiSb-based SOT-MRAM could outperform the existing spin-transfer torque (STT) MRAM technology.

“As SOT-MRAM can be switched one order of magnitude faster than STT-MRAM, the switching energy can be reduced by at least two orders of magnitude,” says Pham. “Also, the writing speed could be increased 20 times and the bit density increased by a factor of ten.”

The viability of such energy-efficient SOT-MRAMs has recently been demonstrated in experiments, albeit using heavy metals, conducted by IMEC, the international R&D and innovation hub headquartered in Leuven, Belgium.

If scaled up successfully, BiSb-based SOT-MRAM could drastically improve upon its heavy metal-based counterparts and even become competitive with dynamic random access memory (DRAM), the dominant technology of today.

An attractive, overlooked material

BiSb has tended to be overlooked by the research community due to its small band gap[5] and complex surface states. However, Pham says: “From an electrical engineering perspective, BiSb is very attractive due to its high carrier mobility, which makes it easier to drive a current within the material.”

“We knew that BiSb has many topological surface states, meaning we could expect a much stronger spin Hall effect. That’s why we started studying this material about two years ago.”

The thin films were grown using a high-precision method called molecular beam epitaxy (MBE). The researchers discovered a particular surface orientation named BiSb(012), which is thought to be a key factor behind the large spin Hall effect. Pham points out that the number of Dirac cones[6]0 on the BiSb(012) surface is another important factor, which his team is now investigating.

Challenges ahead

Pham is currently collaborating with industry to test and scale up BiSb-based SOT-MRAM.

“The first step is to demonstrate manufacturability,” he says. “We aim to show it’s still possible to achieve a strong spin Hall effect, even when BiSb thin films are fabricated using industry-friendly technologies such as the sputtering method.”

“It’s been over ten years since the emergence of topological insulators, but it was not clear whether those materials could be used in realistic devices at room temperature. Our research brings topological insulators to a new level, where they hold great promise for ultra-low power SOT-MRAM.”

Scientists from the University of Konstanz and Paderborn University have succeeded in producing and demonstrating what is known as Wannier-Stark localization for the first time. In doing so, the physicists managed to overcome obstacles that had so far been considered insurmountable in the field of optoelectronics and photonics. Wannier-Stark localization causes extreme imbalance within the electric system of crystalline solids. “This fundamental effect was predicted more than 80 years ago. But it has remained unclear ever since whether this state can be realized in a bulk crystal, that is, on the level of chemical bonds between atoms,” says Professor Alfred Leitenstorfer, Professor of Experimental Physics at the University of Konstanz. Analogues of the effect have so far been demonstrated only in artificial systems like semiconductor superlattices or ultracold atomic gases. In a bulk solid, Wannier-Stark localization can only be maintained for an extremely short period of time, shorter than a single oscillation of infrared light. Using the ultrafast laser systems at the University of Konstanz, Wannier-Stark localization has now been demonstrated for the first time. The experiment was conducted in a high-purity gallium arsenide crystal grown at ETH Zurich using epitaxial growth. The research results were published in the scientific journal Nature Communications on 23 July 2018.

What is Wannier-Stark localization?

If we tried to picture the atoms of a crystal, it would have to be as a three-dimensional grid composed of small beads that repel each other and are only kept together by rubber bands. The system remains stable as long as the rubber band is as strong as the repulsion is. If this is the case, the beads neither move closer to each other, nor do they move away from each other – the distance between them remains about the same. Wannier-Stark localization occurs when the rubber bands are removed abruptly. It is the electronic state that happens at the precise moment in time when the rubber bands have already gone but the beads still remain in place: The chemical bonds that hold the crystal together have been suspended.

If this state is maintained for too long, the beads will break apart and the crystal dissolves. To analyze Wannier-Stark localization, the physicists had to remove the stabilizing structures, capture the system within a fraction of a light oscillation using light pulses, and finally to stabilize it again to prevent the atoms from breaking apart. The experiment was made possible through the highly intense electric field of an ultrashort infrared light pulse, which is present in the crystal for a few femtoseconds only. “This is what we specialize in: studying phenomena that only exist on very short time scales,” explains Alfred Leitenstorfer.

“In perfect insulators and semiconductors, electronic states expand throughout the entire crystal. According to an 80-year-old prediction, this changes as soon as electrical voltage is applied,” says Professor Torsten Meier from Paderborn University. “If the electric field inside the crystal is strong enough, the electronic states can be localized to a few atoms. This state is called the Wannier-Stark ladder”, explains the physicist, who is also Vice-President for International Relations at Paderborn University.

New electronic characteristics

“A system that deviates so extremely from its equilibrium has completely new characteristics,” says Alfred Leitenstorfer about why this state is so interesting from a scientific perspective. The short-lived Wannier-Stark localization correlates with drastic changes to the electronic structure of the crystal and results, for example, in extremely high optical nonlinearity. The scientists also assume that this state is chemically particularly reactive.

The first-ever experimental realization of Wannier-Stark localization in a gallium arsenide crystal was made possible through highly intense Terahertz radiation with field intensities of more than ten million volts per centimetre. The application of more ultrashort optical light pulses resulted in changes to the crystal’s optical characteristics, which was instrumental to proving this state. “If we use suitably intense light pulses consisting of a few oscillations lasting some ten femtoseconds only, we can realize the Wannier-Stark localization for a short period of time,” says Alfred Leitenstorfer. “Our readings match the theoretical considerations and simulations carried out both by my own research team and by that of my colleague, Professor Wolf Gero Schmidt,” adds Torsten Meier. The researchers are planning to study the extreme state of Wannier-Stark localization on the atomic scale in more detail in the future and intend to make its particular characteristics usable.