Tag Archives: letter-wafer-tech

Researchers at Oregon State University are looking at a highly durable organic pigment, used by humans in artwork for hundreds of years, as a promising possibility as a semiconductor material.

Findings suggest it could become a sustainable, low-cost, easily fabricated alternative to silicon in electronic or optoelectronic applications where the high-performance capabilities of silicon aren’t required.

Optoelectronics is technology working with the combined use of light and electronics, such as solar cells, and the pigment being studied is xylindein.

“Xylindein is pretty, but can it also be useful? How much can we squeeze out of it?” said Oregon State University physicist Oksana Ostroverkhova. “It functions as an electronic material but not a great one, but there’s optimism we can make it better.”

Xylindien is secreted by two wood-eating fungi in the Chlorociboria genus. Any wood that’s infected by the fungi is stained a blue-green color, and artisans have prized xylindein-affected wood for centuries.

The pigment is so stable that decorative products made half a millennium ago still exhibit its distinctive hue. It holds up against prolonged exposure to heat, ultraviolet light and electrical stress.

“If we can learn the secret for why those fungi-produced pigments are so stable, we could solve a problem that exists with organic electronics,” Ostroverkhova said. “Also, many organic electronic materials are too expensive to produce, so we’re looking to do something inexpensively in an ecologically friendly way that’s good for the economy.”

With current fabrication techniques, xylindein tends to form non-uniform films with a porous, irregular, “rocky” structure.

“There’s a lot of performance variation,” she said. “You can tinker with it in the lab, but you can’t really make a technologically relevant device out of it on a large scale. But we found a way to make it more easily processed and to get a decent film quality.”

Ostroverkhova and collaborators in OSU’s colleges of Science and Forestry blended xylindein with a transparent, non-conductive polymer, poly(methyl methacrylate), abbreviated to PMMA and sometimes known as acrylic glass. They drop-cast solutions both of pristine xylindein and a xlyindein-PMMA blend onto electrodes on a glass substrate for testing.

They found the non-conducting polymer greatly improved the film structure without a detrimental effect on xylindein’s electrical properties. And the blended films actually showed better photosensitivity.

“Exactly why that happened, and its potential value in solar cells, is something we’ll be investigating in future research,” Ostroverkhova said. “We’ll also look into replacing the polymer with a natural product – something sustainable made from cellulose. We could grow the pigment from the cellulose and be able to make a device that’s all ready to go.

“Xylindein will never beat silicon, but for many applications, it doesn’t need to beat silicon,” she said. “It could work well for depositing onto large, flexible substrates, like for making wearable electronics.”

This research, whose findings were recently published in MRS Advances, represents the first use of a fungus-produced material in a thin-film electrical device.

“And there are a lot more of the materials,” Ostroverkhova said. “This is just first one we’ve explored. It could be the beginning of a whole new class of organic electronic materials.”

ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically intended for demanding automotive applications. The new AEC-Q101 automotive grade SiC diodes deliver the reliability and ruggedness needed by modern automotive applications, along with the numerous performance benefits synonymous with Wide Band Gap (WBG) technologies.

SiC technology provides superior switching performance and higher reliability compared to silicon devices. The diodes have no reverse recovery current and switching performance is independent of temperature. Excellent thermal performance, increased power density and reduced EMI, as well as decreased system size and cost, make SiC a compelling choice for the growing number of high-performance automotive applications.

ON Semiconductor’s new SiC diodes are available in popular surface mount and through-hole packages, including TO-247, D2PAK and DPAK. The FFSHx0120 1200 Volt (V) Gen1 devices and FFSHx065 650 V Gen2 devices offer zero reverse recovery, low forward voltage, temperature independent current stability, extremely low leakage current, high surge capacity and a positive temperature coefficient. They deliver improved efficiency, while the faster recovery increases switching speeds, thereby reducing the size of magnetic components required.

In order to meet the robustness requirements and perform reliably in the harsh electrical environments of automotive applications, the diodes have been designed to withstand high surge currents. They also include a unique, patented termination structure that improves reliability and enhances stability. Operating temperature range is -55°C to +175°C.

“By expanding our Schottky diode range with AEC qualified devices, ON Semiconductor is bringing the significant benefits of SiC technology to automotive applications, allowing our customers to achieve the demanding performance requirements of this sector,” said Fabio Necco, Senior Director, ON Semiconductor. “SiC technology is a perfect fit for the automotive environment, where it delivers greater efficiency, faster switching, improved thermal performance and high levels of robustness. In a sector where saving space and weight are critical, the greater power density of SiC, which helps reduce overall solution size, along with the associated benefit of smaller magnetics, is most welcome.”

The new devices will be demonstrated during PCIM, along with the company’s solutions in areas such as Wide Band Gap, Automotive, Motor Control, USB Type-C power delivery, LED Lighting and Smart Passive Sensors (SPS) for industrial predictive maintenance applications.

ON Semiconductor will also be demonstrating its industry-leading advanced SPICE model that is sensitive to process parameter and layout perturbations, and therefore represents a step-change versus current industry modelling capabilities. Using this tool, circuit designers can evaluate technologies early in the simulation process, rather than through costly and time consuming fabrication iterations. A further benefit of ON Semiconductor’s robust SPICE agnostic model is that it can port across multiple industry standard simulation platforms.

A new way of enhancing the interactions between light and matter, developed by researchers at MIT and Israel’s Technion, could someday lead to more efficient solar cells that collect a wider range of light wavelengths, and new kinds of lasers and light-emitting diodes (LEDs) that could have fully tunable color emissions.

The fundamental principle behind the new approach is a way to get the momentum of light particles, called photons, to more closely match that of electrons, which is normally many orders of magnitude greater. Because of the huge disparity in momentum, these particles usually interact very weakly; bringing their momenta closer together enables much greater control over their interactions, which could enable new kinds of basic research on these processes as well as a host of new applications, the researchers say.

The new findings, based on a theoretical study, are being published today in the journal Nature Photonics in a paper by Yaniv Kurman of Technion (the Israel Institute of Technology, in Haifa); MIT graduate student Nicholas Rivera; MIT postdoc Thomas Christensen; John Joannopoulos, the Francis Wright Davis Professor of Physics at MIT; Marin Soljacic, professor of physics at MIT; Ido Kaminer, a professor of physics at Technion and former MIT postdoc; and Shai Tsesses and Meir Orenstein at Technion.

While silicon is a hugely important substance as the basis for most present-day electronics, it is not well-suited for applications that involve light, such as LEDs and solar cells — even though it is currently the principal material used for solar cells despite its low efficiency, Kaminer says. Improving the interactions of light with an important electronics material such as silicon could be an important milestone toward integrating photonics — devices based on manipulation of light waves — with electronic semiconductor chips.

Most people looking into this problem have focused on the silicon itself, Kaminer says, but “this approach is very different — we’re trying to change the light instead of changing the silicon.” Kurman adds that “people design the matter in light-matter interactions, but they don’t think about designing the light side.”

One way to do that is by slowing down, or shrinking, the light enough to drastically lower the momentum of its individual photons, to get them closer to that of the electrons. In their theoretical study, the researchers showed that light could be slowed by a factor of a thousand by passing it through a kind of multilayered thin-film material overlaid with a layer of graphene. The layered material, made of gallium arsenide and indium gallium arsenide layers, alters the behavior of photons passing through it in a highly controllable way. This enables the researchers to control the frequency of emissions from the material by as much as 20 to 30 percent, says Kurman, who is the paper’s lead author.

The interaction of a photon with a pair of oppositely charged particles — such as an electron and its corresponding “hole” — produces a quasiparticle called a plasmon, or a plasmon-polariton, which is a kind of oscillation that takes place in an exotic material such as the two-dimensional layered devices used in this research. Such materials “support elastic oscillations on its surface, really tightly confined” within the material, Rivera says. This process effectively shrinks the wavelengths of light by orders of magnitude, he says, bringing it down “almost to the atomic scale.”

Because of that shrinkage, the light can then be absorbed by the semiconductor, or emitted by it, he says. In the graphene-based material, these properties can actually be controlled directly by simply varying a voltage applied to the graphene layer. In that way, “we can totally control the properties of the light, not just measure it,” Kurman says.

Although the work is still at an early and theoretical stage, the researchers say that in principle this approach could lead to new kinds of solar cells capable of absorbing a wider range of light wavelengths, which would make the devices more efficient at converting sunlight to electricity. It could also lead to light-producing devices, such as lasers and LEDs, that could be tuned electronically to produce a wide range of colors. “This has a measure of tunability that’s beyond what is currently available,” Kaminer says.

“The work is very general,” Kurman says, so the results should apply to many more cases than the specific ones used in this study. “We could use several other semiconductor materials, and some other light-matter polaritons.” While this work was not done with silicon, it should be possible to apply the same principles to silicon-based devices, the team says. “By closing the momentum gap, we could introduce silicon into this world” of plasmon-based devices, Kurman says.

Because the findings are so new, Rivera says, it “should enable a lot of functionality we don’t even know about yet.”

At this week’s 2018 IEEE International Interconnect Technology Conference (IITC 2018), imec will present 11 papers on advanced interconnects, ranging from extending Cu and Co damascene metallization, all the way to evaluating new alternatives such as Ru and graphene. After careful evaluation of the resistance and reliability behavior, imec takes first steps towards extending conventional metallization into to the 3nm technology node.

For almost two decades, Cu-based dual damascene has been the workhorse industrial process flow for building reliable interconnects. But when downscaling logic device technology towards the 5nm and 3nm technology nodes, meeting resistance and reliability requirements for the tightly pitched Cu lines has become increasingly challenging. The industry is however in favor of extending the current damascene technology as long as possible, and therefore, different solutions have emerged.

To set the limits of scaling, imec has benchmarked the resistance of Cu with respect to Co and Ru in a damascene vehicle with scaled dimensions, demonstrating that Cu still outperforms Co for wire cross sections down to 300nm2 (or linewidths of 12nm), which corresponds to the 3nm technology node. To meet reliability requirements, one option is to use Cu in combination with thin diffusion barriers such as tantalum nitride (TaN)) and liners such as Co or Ru. It was found that the TaN diffusion barrier can be scaled to below 2nm while maintaining excellent Cu diffusion barrier properties.

For Cu linewidths down to 15–12nm, imec also modeled the impact of the interconnect line-edge roughness on the system-level performance. Line-edge roughness is caused by the lithographic and patterning steps of interconnect wires, resulting in small variations in wire width and spacing. At small pitches, these can affect the Cu interconnect resistance and variability. Although there is a significant impact of line-edge roughness on the resistance distribution for short Cu wires, the effect largely averages out at the system level.

An alternative solution to extend the traditional damascene flow is replacing Cu by Co. Today Co requires a diffusion barrier – an option that recently gained industrial acceptance. A next possible step is to enable barrierless Co or at least sub-nm barrier thickness with careful interface engineering. Co has the clear advantage of having a lower resistance for smaller wire cross-secions and smaller vias. Based on electromigration and thermal storage experiments, imec presents a detailed study of the mechanisms that impact Co via reliability, showing the abscence of voids in barrierless Co vias, demonstrating a better scalability of Co towards smaller nodes.

The research is performed in cooperation with imec’s key nano interconnect program partners including GlobalFoundries, Huawei, Intel, Micron, Qualcomm, Samsung, SK Hynix, SanDisk/Western Digital, Sony Semiconductor Solutions, TOSHIBA Memory and TSMC.

BISTel, a provider of intelligent, real-time data management, advanced analytics and predictive solutions for smart manufacturing announced today an innovative new Chamber Matching (CM) application that enables semiconductor manufacturers to better guard against events that negatively impact yield.

For semiconductor wafer manufacturers, optimizing wafer chamber performance is critical to ensuring high quality, high yield wafers. For customers to achieve this goal and maximize the performance of their fleet, analyzing variations in chamber performance and quickly recognizing which parameters are changing over time is critical to assuring the maximum possible yield from each chamber. BISTel’s new Chamber Matching (CM) application enables customers to quickly determine the best performing chamber – often referred to as the reference chamber or golden chamber. Customers can then compare the reference chamber to all other chambers to help maximize performance.

“CM is the second of four exciting new intelligent manufacturing solutions we have introduced to the market, and that will have an immediate impact on our customers wafer quality and yield,” noted W.K. Choi, Founder and CEO, BISTel. “With these advance new tools, we can perform real time monitoring and analysis to quickly identify the golden chamber and provide our customers the opportunity to maximize the performance of their equipment and processes.”

Key Features and Benefits

BISTel’s new Chamber Matching (CM) solution quickly identifies mis-matching and drifting sensors and it can analyze an unlimited number of chambers simultaneously. In addition, CM:

  • Provides real time monitoring to improve quality and yield.
  • Executes statistical analysis to quickly identify the best performing chamber or “Golden Chamber.”
  • Performs full trace analysis on all sensors and ranks chambers and parameters worse to best.
  • Enables customers to easily conduct time-based, chamber performance analysis.
  • Is completely FDC system independent

BISTel is a provider of real-time, intelligent manufacturing solutions that collect and manage big data, monitor the health of equipment, optimize process flows, analyze large data and quickly identify root cause failures to mitigate risk. BISTel solutions help customers reduce costs, improve quality, and increase yield. Founded in 2000, BISTel has more than 340 employees worldwide. The company is headquartered in South Korea, with offices in California, China, Singapore and Texas. BISTel has a deep customer following in semiconductor, FPD, and PCB/SMT manufacturing as well as automotive, Biotech and steel manufacturing. Its new A.I. based manufacturing intelligence platform will include new auto learning, predictive, self-healing, and continuous improvement features that accelerate smart manufacturing. For more information visit bistel.com

BISTel, a provider of intelligent, real-time data management, advanced analytics and predictive solutions for smart manufacturing announced today its first adaptive intelligence (A.I.) based applications to enable the smart connected factory or industry 4.0 as some call it. Called Dynamic Fault Detection (DFD), BISTel’s new fault detection and classification solution offers customers full sensor trace data analysis to detect and classify faults real-time, improving quality and yield significantly.

Today, customers rely on legacy FDC systems for accurate fault detection. These systems offer only summary data analysis from sensors for fault detection. Consequently, small changes in sensor behavior can go undetected, resulting in a negative impact on yield. BISTel’s new Dynamic Fault Detection (DFD®) system overcomes these challenges by offering full trace analysis. Because BISTel’s new DFD® system establishes trace references dynamically and does not rely on the traditional control limiting methods used by FDC, it eliminates modeling completely. DFD also uses smarter algorithms to better distinguish between real alarms and false alarms resulting in 10 times fewer alarms than FDC systems.

“DFD is the first of several intelligent manufacturing applications with new machine learning that will help our customers to start to realize the full potential of A.I. for smart manufacturing,” commented W.K. Choi, Founder and CEO, BISTel. “DFD enables customers to quickly and accurately identify and classify faults. DFD helps our customers create early identification of yield related issues so that they can quickly execute the fastest possible response to solving these issues.” added Choi.

Sensor trace data contains a wealth of information that helps manufacturers identify potential yield issues, including ramp rate changes, spikes, glitches, shift and drift. BISTel’s first of its kind, online Dynamic Fault Detection (DFD®) system lowers these risks by offering manufacturers real-time monitoring and detection of full sensor trace data. Customers can now quickly detect, and analyze yield impacting events and quickly resolving yield issues. DFD® also integrates seamlessly to legacy FDC systems.

Key Features and Benefits

  • Real time monitoring Improves quality and yield.
  • Reduces risk by protecting against yield impacting events.
  • Real-time fault detection with dynamic references instead of static control limits.
  • DFD’s sensor behavior analysis enables best system drift detection
  • Intelligent alarming reduces alarms by more than 10X

An international team of researchers, affiliated with UNIST has discovered a novel method for the synthesis of ultrathin semiconductors. This is a unique growth mechanism, which yielded nanoscopic semiconductor ribbons that are only a few atoms thick.

This breakthrough has been jointly conducted by Distinguished Professor Feng Ding and Dr. Wen Zhao from the Center for Multidimensional Carbon Materials (CMCM), within the Institute for Basic Science (IBS) at UNIST, in collaboration with the National University of Singapore (NUS), the National Institute for Materials Science (NIMS), the National Institute of Advanced Industrial Science and Technology (AIST), and Shenzhen University.

In the study, the research team has successfully fabricated MoS2 nanoribbons via vapour-liquid-solid (VLS) growth mechanism, a type of chemical vapour deposition (CVD) process.

“Synthesis of vertically elongated structure via VLS growth mechanism.”

Chemical vapor deposition or CVD is a generic name for a group of processes whereby a solid material is deposited from a vapor by a chemical reaction occurring on or in the vicinity of a normally heated substrate surface. It is the most widely adopted industrial techniques for producing semiconducting thin films and nanostructures.

“The range of structures that can be controllably synthesized by the current methods is still limited in terms of morphology, spatial selectivity, crystal orientation, layer number and chemical composition,” the research team noted. “Therefore, developing versatile growth methods is essential to the realization of highly integrated electronic and photonic devices based on these materials.

“The current CVD-based growth process relies on the inherent dynamics of the precursors to diffuse and self-organize on the substrate surface, which results in crystallites with characteristic triangular or hexagonal shapes,” says Dr. Zhao. “This unique growth mechanism of the nanoscopic semiconductor ribbons that are only a few atoms thick is an exciting discovery.” In the study, she performed density functional theory based molecular dynamic (DFT-MD) simulations of the MoS2 precipitation process.

The proposed mechanism of VLS growth differs from commonly known CVD technique, as it involves the precursors introduced in the vapour phase form a liquid droplet intermediate before condensing into a solid product.

The team noted that the morphology of the growth product was, however, unlike what is normally expected from a VLS growth, which typically yields cylindrical or tubular structures rather than ribbons. Their observation suggests that the liquid droplet migrates on the substrate surface in a rather ordered manner, leaving behind a track of ultrathin crystal.

“Because the liquid droplet migrates on the substrate surface in a rather ordered manner, the morphology of the growth product yielded cylindrical or tubular structures rather than ribbons.” says Dr. Zhao.

This time, however, the horizontal growth of predominantly monolayer MoS2 ribbons was obtained via VLS growth, a unique growth mechanism that has not been reported until now.

Their observation revealed that the VLS growth of monolayer MoS2 is triggered by the reaction between MoO3 and NaCl, which results in the formation of molten Na-Mo-O droplets. These droplets mediate the growth of MoS2 ribbons in the ‘crawling mode’ when saturated with sulfur. The locally well-defined orientations of the ribbons reveal the regular horizontal motion of the droplets during growth.

“Assisting the growth of MoS2 ribbons, like painting with a an ink droplet.”

In order to gain insight into the liquid-solid transformation, Professor Ding’s team performed density functional theory based molecular dynamic (DFT-MD) sumulations of the precipitation process. The simulation showed the attachment of molybdenum (Mo) and sulfur (S) to the previously established MoS2.

“It is worth noting that MoS2 is not oxidized despite the presence of large numbers of oxygen atoms,” says the research team. “We also observe the nucleation of MoS2 clusters in regions that are rich in Mo and S atoms, further supporting the feasibility of liquid-mediated nucleation and growth of MoS2.”

“This study has prompted questions about surface and interface growth of nanomaterials,” says Professor Ding. “By identifying a suitable liquid-phase intermediate compound, we believe that it will be possible to realize the direct 1D growth of a range of van der Waals layered materials.”

The team anticipates that many other materials can be grown using a similar approach. Their short-term goal is to understand the growth mechanism better and to control the morphology of the ribbons.

“Our work identified many interesting questions about surface and interface growth of nanomaterials,” says Professor Goki Eda at the National University of Singapore (NUS), the corresponding author of this study. “We predict that the ability to directly grow complex structures will greatly facilitate the realization of high performance nanoelectronic circuits.”

The team noted that their results provide insight into the distinct VLS growth mode of 2D MoS2 and demonstrate the potential of their implementation in nanoelectronic devices. The findings of this study have been published in the prestigious journal, Nature Materials on April 23, 2018.

Researchers working at the Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) coupled graphene, a monolayer form of carbon, with thin layers of magnetic materials like cobalt and nickel to produce exotic behavior in electrons that could be useful for next-generation computing applications.

Andreas Schmid, left, and Gong Chen are pictured here with the spin-polarized low-energy electron microscopy (SPLEEM) instrument at Berkeley Lab. The instrument was integral to measurements of ultrathin samples that included graphene and magnetic materials. Credit: Roy Kaltschmidt/Berkeley Lab

The work was performed in collaboration with French scientists including Nobel Laureate Albert Fert, an emeritus professor at Paris-Sud University and scientific director for a research laboratory in France. The team performed key measurements at Berkeley Lab’s Molecular Foundry, a DOE Office of Science User Facility focused on nanoscience research.

Fert shared the Nobel Prize in Physics in 2007 for his work in understanding a magnetic effect in multilayer materials that led to new technology for reading data in hard drives, for example, and gave rise to a new field studying how to exploit and control a fundamental property known as “spin” in electrons to drive a new type of low-energy, high-speed computer memory and logic technology known as spintronics.

In this latest work, published online Monday in the journal Nature Materials, the research team showed how that spin property – analogous to a compass needle that can be tuned to face either north or south – is affected by the interaction of graphene with the magnetic layers.

The researchers found that the material’s electronic and magnetic properties create tiny swirling patterns where the layers meet, and this effect gives scientists hope for controlling the direction of these swirls and tapping this effect for a form of spintronics applications known as “spin-orbitronics” in ultrathin materials. The ultimate goal is to quickly and efficiently store and manipulate data at very small scales, and without the heat buildup that is a common hiccup for miniaturizing computing devices.

Typically, researchers working to produce this behavior for electrons in materials have coupled heavy and expensive metals like platinum and tantalum with magnetic materials to achieve such effects, but graphene offers a potentially revolutionary alternative since it is ultrathin, lightweight, has very high electrical conductivity, and can also serve as a protective layer for corrosion-prone magnetic materials.

“You could think about replacing computer hard disks with all solid state devices – no moving parts – using electrical signals alone,” said Andreas Schmid, a staff scientist at the Molecular Foundry who participated in the research. “Part of the goal is to get lower power-consumption and non-volatile data storage.”

The latest research represents an early step toward this goal, Schmid noted, and a next step is to control nanoscale magnetic features, called skyrmions, which can exhibit a property known as chirality that makes them swirl in either a clockwise or counterclockwise direction.

In more conventional layered materials, electrons traveling through the materials can act like an “electron wind” that changes magnetic structures like a pile of leaves blown by a strong wind, Schmid said.

But with the new graphene-layered material, its strong electron spin effects can drive magnetic textures of opposite chirality in different directions as a result of the “spin Hall effect,” which explains how electrical currents can affect spin and vice versa. If that chirality can be universally aligned across a material and flipped in a controlled way, researchers could use it to process data.

“Calculations by other team members show that if you take different magnetic materials and graphene and build a multilayer stack of many repeating structures, then this phenomenon and effect could possibly be very powerfully amplified,” Schmid said.

To measure the layered material, scientists applied spin-polarized low-energy electron microscopy (SPLEEM) using an instrument at the Molecular Foundry’s National Center for Electron Microscopy. It is one of just a handful of specialized devices around the world that allow scientists to combine different images to essentially map the orientations of a sample’s 3-D magnetization profile (or vector), revealing a its “spin textures.”

The research team also created the samples using the same SPLEEM instrument through a precise process known as molecular beam epitaxy, and separately studied the samples using other forms of electron-beam probing techniques.

Gong Chen, a co-lead author who participated in the study as a postdoctoral researcher at the Molecular Foundry and is now an assistant project scientist in the UC Davis Physics Department, said the collaboration sprang out of a discussion with French scientists at a conference in 2016 – both groups had independently been working on similar research and realized the synergy of working together.

While the effects that researchers have now observed in the latest experiments had been discussed decades ago in previous journal articles, Chen noted that the concept of using an atomically thin material like graphene in place of heavy elements to generate those effects was a new concept.

“It has only recently become a hot topic,” Chen said. “This effect in thin films had been ignored for a long time. This type of multilayer stacking is really stable and robust.”

Using skyrmions could be revolutionary for data processing, he said, because information can potentially be stored at much higher densities than is possible with conventional technologies, and with much lower power usage.

Molecular Foundry researchers are now working to form the graphene-magnetic multilayer material on an insulator or semiconductor to bring it closer to potential applications, Schmid said.

GLOBALFOUNDRIES today announced that its 180nm Ultra High Voltage (180UHV) technology platform has entered volume production for a range of client applications, including AC-DC controllers for industrial power supplies, wireless charging, solid state and LED lighting, as well as AC adapters for consumer electronics and smartphones.

The increasing demand for highly cost-effective systems requires integrated circuits (ICs) that achieve significant area savings while reducing bill-of-materials (BOM) and printed circuit board (PCB) footprint by integrating discrete components onto the same die. GF’s 180UHV platform features a 3.3V LV CMOS baseline, with options for HV18, HV30 and 700V UHV, that delivers significant area savings for both digital and analog circuit blocks, compared to the traditional 5V bipolar CMOS DMOS (BCD) technologies.

“GF’s leadership in providing high voltage solutions makes the company a perfect strategic partner for On-Bright’s power supply technologies,” said Julian Chen, CEO of On-Bright, the leading market player in AC-DC switch mode power supply products. “GF’s new 180UHV process integrates UHV components into the same IC with 180nm digital and analog by incorporating On-Bright know-how in the design. The technology has reduced On-Bright’s switched-mode power supply cost and footprint to give our AC-DC switch mode power supply products additional system-level benefits.”

As part of a modular platform based on the company’s 180nm process node, GF’s 180UHV process technology delivers a 10x increase in digital density compared to previous generations for integrated AC-DC conversion. For AC-DC conversion, the platform integrates high voltage transistors with precision analog and passive devices to control high input and output voltages of AC-DC SMPS circuits. The process is qualified up to 150°C to accommodate the high ambient temperatures of power supply and LED lighting products.

“GF continues to expand its UHV portfolio to provide competitive technology capabilities and manufacturing excellence that will enable our customers to play a critical role in bringing a new generation of highly integrated devices to real-world environments,” said Dr. Bami Bastani, senior vice president of business units at GF. “Our 180UHV is an ideal technology for customers that are looking to develop the highest-performing solutions for a new generation of integrated digital, analog and high voltage applications.”

As a part of the company’s analog and power platform, GF provides various types of HV, BCD, and UHV technologies, allowing customers to integrate power and high voltage transistors across a wide range of voltages, from 5V to 700V, to meet the diverse needs of low and high power applications. GF has a successful track record in manufacturing analog and power solutions in both its 200mm and 300mm production lines in Singapore.

Scientists from the universities of Bristol and Cambridge have found a way to create polymeric semiconductor nanostructures that absorb light and transport its energy further than previously observed.

Image showing light emission from the polymeric nanostructures and schematic of a single nanostructure. Credit: University of Bristol

This could pave the way for more flexible and more efficient solar cells and photodetectors.

The researchers, whose work appears in the journal Science, say their findings could be a “game changer” by allowing the energy from sunlight absorbed in these materials to be captured and used more efficiently.

Lightweight semiconducting plastics are now widely used in mass market electronic displays such those found in phones, tablets and flat screen televisions. However, using these materials to convert sunlight into electricity, to make solar cells, is far more complex.

The photo-excited states – which is when photons of light are absorbed by the semiconducting material – need to move so that they can be “harvested” before they lose their energy in less useful ways. These excitations typically only travel ca. 10 nanometres in polymeric semiconductors, thus requiring the construction of structures patterned on this length-scale to maximise the “harvest”.

In the chemistry labs of the University of Bristol, Dr Xu-Hui Jin and colleagues developed a novel way to make highly ordered crystalline semiconducting structures using polymers.

While in the Cavendish Laboratory in Cambridge, Dr Michael Price measured the distance that the photo-exited states can travel, which reached distances of 200 nanometres – 20 times further than was previously possible.

200 nanometres is especially significant because it is greater than the thickness of material needed to completely absorb ambient light thus making these polymers more suitable as “light harvesters” for solar cells and photodetectors.

Dr George Whittell from Bristol’s School of Chemistry, explains: “The gain in efficiency would actually be for two reasons: first, because the energetic particles travel further, they are easier to “harvest”, and second, we could now incorporate layers ca. 100 nanometres thick, which is the minimum thickness needed to absorb all the energy from light – the so-called optical absorption depth. Previously, in layers this thick, the particles were unable to travel far enough to reach the surfaces.”

Co-researcher Professor Richard Friend, from Cambridge, added: “The distance that energy can be moved in these materials comes as a big surprise and points to the role of unexpected quantum coherent transport processes.”

The research team now plans to prepare structures thicker than those in the current study and greater than the optical absorption depth, with a view to building prototype solar cells based on this technology.

They are also preparing other structures capable of using light to perform chemical reactions, such as the splitting of water into hydrogen and oxygen.