Tag Archives: letter-wafer-tech

The ability to harness light into an intense beam of monochromatic radiation in a laser has revolutionized the way we live and work for more than fifty years. Among its many applications are ultrafast and high-capacity data communications, manufacturing, surgery, barcode scanners, printers, self-driving technology and spectacular laser light displays. Lasers also find a home in atomic and molecular spectroscopy used in various branches of science as well as for the detection and analysis of a wide range of chemicals and biomolecules.

Lasers can be categorized based on their emission wavelength within the electromagnetic spectrum, of which visible light lasers — such as those in laser pointers — are only one small part. Infrared lasers are used for optical communications through fibers. Ultraviolet lasers are used for eye surgery. And then there are terahertz lasers, which are the subject of investigation at the research group of Sushil Kumar, an associate professor of Electrical and Computer Engineering at Lehigh University.

Left to right: Research contributors and Lehigh electrical and computer engineering graduate students Ji Chen, Liang Gao and Yuan Jin stand in the Terahertz Photonics laboratory of Sushil Kumar in the Sinclair Building at Lehigh University. Credit: Sushil Kumar, Lehigh University

Left to right: Research contributors and Lehigh electrical and computer engineering graduate students Ji Chen, Liang Gao and Yuan Jin stand in the Terahertz Photonics laboratory of Sushil Kumar in the Sinclair Building at Lehigh University. Credit: Sushil Kumar, Lehigh University

Terahertz lasers emit radiation that sits between microwaves and infrared light along the electromagnetic spectrum. Their radiation can penetrate common packaging materials such as plastics, fabrics and cardboard, and are also remarkably effective in optical sensing and analysis of a wide variety of chemicals. These lasers have the potential for use in non-destructive screening and detection of packaged explosives and illicit drugs, evaluation of pharmaceutical compounds, screening for skin cancer and even the study of star and galaxy formation.

Applications such as optical spectroscopy require the laser to emit radiation at a precise wavelength, which is most commonly achieved by implementing a technique known as “distributed-feedback.” Such devices are called single-mode lasers. Requiring single-mode operation is especially important for terahertz lasers, since their most important applications will be in terahertz spectroscopy. Terahertz lasers are still in a developmental phase and researchers around the world are trying to improve their performance characteristics to meet the conditions that would make them commercially viable.

As it propagates, terahertz radiation is absorbed by atmospheric humidity. Therefore, a key requirement for such lasers is an intense beam such that it could be used for optical sensing and analysis of substances kept at a standoff distance of several meters or more, and not be absorbed. To this end, Kumar’s research team is focused on improving their intensity and brightness, achievable in part by increasing optical power output.

In a recent paper published in the journal Nature Communications, the Lehigh team — supervised by Kumar in collaboration with Sandia National Laboratories — reported on a simple yet effective technique to enhance the power output of single-mode lasers that are “surface-emitting” (as opposed to those using an “edge-emitting” configuration). Of the two types, the surface-emitting configuration for semiconductor lasers offers distinctive advantages in how the lasers could be miniaturized, packaged and tested for commercial production.

The published research describes a new technique by which a specific type of periodicity is introduced in the laser’s optical cavity, allowing it to fundamentally radiate a good quality beam with increased radiation efficiency, thus making the laser more powerful. The authors call their scheme as having a “hybrid second- and fourth-order Bragg grating” (as opposed to a second-order Bragg grating for the typical surface-emitting laser, variations of which have been used in a wide variety of lasers for close to three decades). The authors claim that their hybrid grating scheme is not limited to terahertz lasers and could potentially improve performance of a broad class of surface-emitting semiconductor lasers that emit at different wavelengths.

The report discusses experimental results for a monolithic single-mode terahertz laser with a power output of 170 milliwatts, which is the most powerful to date for such class of lasers. The research shows conclusively that the so-called hybrid grating is able to make the laser emit at a specific desired wavelength through a simple alteration in the periodicity of imprinted grating in the laser’s cavity while maintaining its beam quality. Kumar maintains that power levels of one watt and above should be achievable with future modifications of their technique — which might just be the threshold needed to be overcome for industry to take notice and step into potential commercialization of terahertz laser-based instruments.

 

Japanese researchers have developed a new method to build large areas of semiconductive material that is just two molecules thick and a total of 4.4 nanometers tall. The films function as thin film transistors, and have potential future applications in flexible electronics or chemical detectors. These thin film transistors are the first example of semiconductive single molecular bilayers created with liquid solution processing, a standard manufacturing process that minimizes costs.

Top surface view of 3-D computer model (left) and Atomic Force Microscopy image (right) of the new film made by University of Tokyo scientists. The well-organized structure of the molecules is visible in both the 3-D computer model and microscope image as a herringbone or cross-hair pattern. The color differences in the microscopy image are a result of the different lengths of the molecules' tails; the length differences cause the geometric frustration that prevents layers from stacking. pm = picometers, nm = nanometers. Credit: Shunto Arai and Tatsuo Hasegawa

Top surface view of 3-D computer model (left) and Atomic Force Microscopy image (right) of the new film made by University of Tokyo scientists. The well-organized structure of the molecules is visible in both the 3-D computer model and microscope image as a herringbone or cross-hair pattern. The color differences in the microscopy image are a result of the different lengths of the molecules’ tails; the length differences cause the geometric frustration that prevents layers from stacking. pm = picometers, nm = nanometers. Credit: Shunto Arai and Tatsuo Hasegawa

“We want to give electronic devices the features of real cell membranes: flexible, strong, sensitive, and super thin. We found a novel way to design semiconductive single molecular bilayers that allows us to manufacture large surface areas, up to 100 square centimeters (39 square inches). They can function as high performance thin film transistors and could have many applications in the future,” said Assistant Professor Shunto Arai, the first author on the recent research publication.

Professor Tatsuo Hasegawa of the University of Tokyo Department of Applied Physics led the team that built the new film. The breakthrough responsible for their success is a concept called geometric frustration, which uses a molecular shape that makes it difficult for molecules to settle in multiple layers on top of each other.

The film is transparent, but the forces of attraction and repulsion between the molecules create an organized, repeated herringbone pattern when the film is viewed from above through a microscope. The overall molecular structure of the bilayer is highly stable. Researchers believe it should be possible to build the same structure out of different molecules with different functionalities.

The individual molecules used in the current film are divided into two regions: a head and a tail. The head of one molecule stacks on top of another, with their tails pointing in opposite directions so the molecules form a vertical line. These two molecules are surrounded by identical head-to-head pairs of molecules, which all together form a sandwich called a molecular bilayer.

Researchers discovered they could prevent additional bilayers from stacking on top by building the bilayer out of molecules with different length tails, so the surfaces of the bilayer are rough and naturally discourage stacking. This effect of different lengths is referred to as geometric frustration.

Standard methods of creating semiconductive molecular bilayers cannot control the thickness without causing cracks or an irregular surface. The geometric frustration of different length tails has allowed researchers to avoid these pitfalls and build a 10cm by 10cm (3.9 inches by 3.9 inches) square of their film using the common industrial method of solution processing.

The semiconductive properties of the bilayer may give the films applications in flexible electronics or chemical detection.

Semiconductors are able to switch between states that allow electricity to flow (conductors) and states that prevent electricity from flowing (insulators). This on-off switching is what allows transistors to quickly change displayed images, such as a picture on an LCD screen. The single molecular bilayer created by the UTokyo team is much faster than amorphous silicon thin film transistors, a common type of semiconductor currently used in electronics.

The team will continue to investigate the properties of geometrically frustrated single molecular bilayers and potential applications for chemical detection. Collaborators based at the National Institute of Advanced Industrial Science and Technology, the Nippon Kayaku Company Limited, Condensed Matter Research Center, and High Energy Accelerator Research Organization also contributed to the research.

Cheap, flexible and sustainable plastic semiconductors will soon be a reality thanks to a breakthrough by chemists at the University of Waterloo.

Professor Derek Schipper and his team at Waterloo have developed a way to make conjugated polymers, plastics that conduct electricity like metals, using a simple dehydration reaction the only byproduct of which is water.

“Nature has been using this reaction for billions of years and industry more than a hundred,” said Schipper, a professor of Chemistry and a Canada Research Chair in Organic Material Synthesis. “It’s one of the cheapest and most environmentally friendly reactions for producing plastics.”

Schipper and his team have successfully applied this reaction to create poly(hetero)arenes, one of the most studied classes of conjugated polymers which have been used to make lightweight, low- cost electronics such as solar cells, LED displays, and chemical and biochemical sensors.

Dehydration is a common method to make polymers, a chain of repeating molecules or monomers that link up like a train. Nature uses the dehydration reaction to make complex sugars from glucose, as well as proteins and other biological building blocks such as cellulose. Plastics manufacturers use it to make everything from nylon to polyester, cheaply and in mind-boggling bulk.

“Synthesis has been a long-standing problem in this field,” said Schipper. “A dehydration method such as ours will streamline the entire process from discovery of new derivatives to commercial product development. Better still, the reaction proceeds relatively fast and at room temperature.”

Conjugated polymers were first discovered by Alan Heeger, Alan McDonald, and Hideki Shirakawa in the late 1970s, eventually earning them the Nobel Prize in Chemistry in 2000.

Researchers and engineers quickly discovered several new polymer classes with plenty of commercial applications, including a semiconducting version of the material; but progress has stalled in reaching markets in large part because conjugated polymers are so hard to make. The multi-step reactions often involve expensive catalysts and produce environmentally harmful waste products.

Schipper and his team are continuing to perfect the technique while also working on developing dehydration synthesis methods for other classes of conjugated polymers. The results of their research so far appeared recently in the journal Chemistry – A European Journal.

 

The next generation of energy-efficient power electronics, high-frequency communication systems, and solid-state lighting rely on materials known as wide bandgap semiconductors. Circuits based on these materials can operate at much higher power densities and with lower power losses than silicon-based circuits. These materials have enabled a revolution in LED lighting, which led to the 2014 Nobel Prize in physics.

In new experiments reported in Applied Physics Letters, from AIP Publishing, researchers have shown that a wide-bandgap semiconductor called gallium oxide (Ga2O3) can be engineered into nanometer-scale structures that allow electrons to move much faster within the crystal structure. With electrons that move with such ease, Ga2O3 could be a promising material for applications such as high-frequency communication systems and energy-efficient power electronics.

Schematic stack and the scanning electron microscopic image of the β-(AlxGa1-x)2O3/Ga2O3 modulation-doped field effect transistor. Credit: Choong Hee Lee and Yuewei Zhang

Schematic stack and the scanning electron microscopic image of the β-(AlxGa1-x)2O3/Ga2O3 modulation-doped field effect transistor. Credit: Choong Hee Lee and Yuewei Zhang

“Gallium oxide has the potential to enable transistors that would surpass current technology,” said Siddharth Rajan of Ohio State University, who led the research.

Because Ga2O3 has one of the largest bandgaps (the energy needed to excite an electron so that it’s conductive) of the wide bandgap materials being developed as alternatives to silicon, it’s especially useful for high-power and high-frequency devices. It’s also unique among wide bandgap semiconductors in that it can be produced directly from its molten form, which enables large-scale manufacturing of high-quality crystals.

For use in electronic devices, the electrons in the material must be able to move easily under an electric field, a property called high electron mobility. “That’s a key parameter for any device,” Rajan said. Normally, to populate a semiconductor with electrons, the material is doped with other elements. The problem, however, is that the dopants also scatter electrons, limiting the electron mobility of the material.

To solve this problem, the researchers used a technique known as modulation doping. The approach was first developed in 1979 by Takashi Mimura to create a gallium arsenide high-electron mobility transistor, which won the Kyoto Prize in 2017. While it is now a commonly used technique to achieve high mobility, its application to Ga2O3 is something new.

In their work, the researchers created a so-called semiconductor heterostructure, creating an atomically perfect interface between Ga2O3 and its alloy with aluminum, aluminum gallium oxide — two semiconductors with the same crystal structure but different energy gaps. A few nanometers away from the interface, embedded inside the aluminum gallium oxide, is a sheet of electron-donating impurities only a few atoms thick. The donated electrons transfer into the Ga2O3, forming a 2-D electron gas. But because the electrons are now also separated from the dopants (hence the term modulation doping) in the aluminum gallium oxide by a few nanometers, they scatter much less and remain highly mobile.

Using this technique, the researchers reached record mobilities. The researchers were also able to observe Shubnikov-de Haas oscillations, a quantum phenomenon in which increasing the strength of an external magnetic field causes the resistance of the material to oscillate. These oscillations confirm formation of the high mobility 2-D electron gas and allow the researchers to measure critical material properties.

Rajan explained that such modulation-doped structures could lead to a new class of quantum structures and electronics that harnesses the potential of Ga2O3.

In a recent study published in Science, researchers at ICFO – The Institute of Photonic Sciences in Barcelona, Spain, along with other members of the Graphene Flagship, reached the ultimate level of light confinement. They have been able to confine light down to a space one atom, the smallest possible. This will pave the way to ultra-small optical switches, detectors and sensors.

Light can function as an ultra-fast communication channel, for example between different sections of a computer chip, but it can also be used for ultra-sensitive sensors or on-chip nanoscale lasers. There is currently much research into how to further shrink devices that control and guide light.

New techniques searching for ways to confine light into extremely tiny spaces, much smaller than current ones, have been on the rise. Researchers had previously found that metals can compress light below the wavelength-scale (diffraction limit), but more confinement would always come at the cost of more energy loss. This fundamental issue has now been overcome.

“Graphene keeps surprising us: nobody thought that confining light to the one-atom limit would be possible. It will open a completely new set of applications, such as optical communications and sensing at a scale below one nanometer,” said ICREA Professor Frank Koppens at ICFO – The Institute of Photonic Sciences in Barcelona, Spain, who led the research.

This team of researchers including those from ICFO (Spain), University of Minho (Portugal) and MIT (USA) used stacks of two-dimensional materials, called heterostructures, to build up a new nano-optical device. They took a graphene monolayer (which acts as a semi-metal), and stacked onto it a hexagonal boron nitride (hBN) monolayer (an insulator), and on top of this deposited an array of metallic rods. They used graphene because it can guide light in the form of plasmons, which are oscillations of the electrons, interacting strongly with light.

“At first we were looking for a new way to excite graphene plasmons. On the way, we found that the confinement was stronger than before and the additional losses minimal. So we decided to go to the one atom limit with surprising results,” said David Alcaraz Iranzo, the lead author from ICFO.

By sending infra-red light through their devices, the researchers observed how the plasmons propagated in between the metal and the graphene. To reach the smallest space conceivable, they decided to reduce the gap between the metal and graphene as much as possible to see if the confinement of light remained efficient, i.e. without additional energy losses. Strikingly, they saw that even when a monolayer of hBN was used as a spacer, the plasmons were still excited, and could propagate freely while being confined to a channel of just one atom thick. They managed to switch this plasmon propagation on and off, simply by applying an electrical voltage, demonstrating the control of light guided in channels smaller than one nanometer.

This enables new opto-electronic devices that are just one nanometer thick, such as ultra-small optical switches, detectors and sensors. Due to the paradigm shift in optical field confinement, extreme light-matter interactions can now be explored that were not accessible before. The atom-scale toolbox of two-dimensional materials has now also proven applicable for many types of new devices where both light and electrons can be controlled even down to the scale of a nanometer.

Professor Andrea C. Ferrari, Science and Technology Officer of the Graphene Flagship, and Chair of its Management Panel, added “While the flagship is driving the development of novel applications, in particular in the field of photonics and optoelectronics, we do not lose sight of fundamental research. The impressive results reported in this paper are a testimony to the relevance for cutting edge science of the Flagship work. Having reached the ultimate limit of light confinement could lead to new devices with unprecedented small dimensions.”

A current area of intense interest in nanotechnology is van der Waals heterostructures, which are assemblies of atomically thin two-dimensional (2D) crystalline materials that display attractive conduction properties for use in advanced electronic devices.

A representative 2D semiconductor is graphene, which consists of a honeycomb lattice of carbon atoms that is just one atom thick. The development of van der Waals heterostructures has been restricted by the complicated and time-consuming manual operations required to produce them. That is, the 2D crystals typically obtained by exfoliation of a bulk material need to be manually identified, collected, and then stacked by a researcher to form a van der Waals heterostructure. Such a manual process is clearly unsuitable for industrial production of electronic devices containing van der Waals heterostructures

Now, a Japanese research team led by the Institute of Industrial Science at The University of Tokyo has solved this issue by developing an automated robot that greatly speeds up the collection of 2D crystals and their assembly to form van der Waals heterostructures. The robot consists of an automated high-speed optical microscope that detects crystals, the positions and parameters of which are then recorded in a computer database. Customized software is used to design heterostructures using the information in the database. The heterostructure is then assembled layer by layer by a robotic equipment directed by the designed computer algorithm. The findings were reported in Nature Communications.

Robot developed for automated assembly of designer nanomaterials. Credit: 2018 SATORU MASUBUCHI, INSTITUTE OF INDUSTRIAL SCIENCE, THE UNIVERSITY OF TOKYO

Robot developed for automated assembly of designer nanomaterials. Credit: 2018 SATORU MASUBUCHI, INSTITUTE OF INDUSTRIAL SCIENCE, THE UNIVERSITY OF TOKYO

“The robot can find, collect, and assemble 2D crystals in a glove box,” study first author Satoru Masubuchi says. “It can detect 400 graphene flakes an hour, which is much faster than the rate achieved by manual operations.”

When the robot was used to assemble graphene flakes into van der Waals heterostructures, it could stack up to four layers an hour with just a few minutes of human input required for each layer. The robot was used to produce a van der Waals heterostructure consisting of 29 alternating layers of graphene and hexagonal boron nitride (another common 2D semiconductor). The record layer number of a van der Waals heterostructure produced by manual operations is 13, so the robot has greatly increased our ability to access complex van der Waals heterostructures.

“A wide range of materials can be collected and assembled using our robot,” co-author Tomoki Machida explains. “This system provides the potential to fully explore van der Waals heterostructures.”

The development of this robot will greatly facilitate production of van der Waals heterostructures and their use in electronic devices, taking us a step closer to realizing devices containing atomic-level designer materials.

Physicists at the University of Warwick have today, Thursday 19th April 2018, published new research in the fournal Science today 19th April 2018 (via the Journal’s First Release pages) that could literally squeeze more power out of solar cells by physically deforming each of the crystals in the semiconductors used by photovoltaic cells.

This is an artists impression of squeezing more power out of solar cells by physically deforming each of the crystals in the semiconductors used by photovoltaic cells. Credit: University of Warwick/Mark Garlick

This is an artists impression of squeezing more power out of solar cells by physically deforming each of the crystals in the semiconductors used by photovoltaic cells. Credit: University of Warwick/Mark Garlick

The paper entitled the “Flexo-Photovoltaic Effect” was written by Professor Marin Alexe, Ming-Min Yang, and Dong Jik Kim who are all based in the University of Warwick’s Department of Physics.

The Warwick researchers looked at the physical constraints on the current design of most commercial solar cells which place an absolute limit on their efficiency. Most commercial solar cells are formed of two layers creating at their boundary a junction between two kinds of semiconductors, p-type with positive charge carriers (holes which can be filled by electrons) and n-type with negative charge carriers (electrons).

When light is absorbed, the junction of the two semiconductors sustains an internal field splitting the photo-excited carriers in opposite directions, generating a current and voltage across the junction. Without such junctions the energy cannot be harvested and the photo-exited carriers will simply quickly recombine eliminating any electrical charge.

That junction between the two semiconductors is fundamental to getting power out of such a solar cell but it comes with an efficiency limit. This Shockley-Queisser Limit means that of all the power contained in sunlight falling on an ideal solar cell in ideal conditions only a maximum of 33.7% can ever be turned into electricity.

There is however another way that some materials can collect charges produced by the photons of the sun or from elsewhere. The bulk photovoltaic effect occurs in certain semiconductors and insulators where their lack of perfect symmetry around their central point (their non-centrosymmetric structure) allows generation of voltage that can be actually larger than the band gap of that material (the band gap being the gap between the valence band highest range of electron energies in which electrons are normally present at absolute zero temperature and the conduction band where electricity can flow).

Unfortunately the materials that are known to exhibit the anomalous photovoltaic effect have very low power generation efficiencies, and are never used in practical power-generation systems.

The Warwick team wondered if it was possible to take the semiconductors that are effective in commercial solar cells and manipulate or push them in some way so that they too could be forced into a non-centrosymmetric structure and possibly therefore also benefit from the bulk photovoltaic effect.

For this paper they decided to try literally pushing such semiconductors into shape using conductive tips from atomic force microscopy devices to a “nano-indenter” which they then used to squeeze and deform individual crystals of Strontium Titanate (SrTiO3), Titanium Dioxide (TiO2), and Silicon (Si).

They found that all three could be deformed in this way to also give them a non-centrosymmetric structure and that they were indeed then able to give the bulk photovoltaic effect.

Professor Marin Alexe from the University of Warwick said:

“Extending the range of materials that can benefit from the bulk photovoltaic effect has several advantages: it is not necessary to form any kind of junction; any semiconductor with better light absorption can be selected for solar cells, and finally, the ultimate thermodynamic limit of the power conversion efficiency, so-called Shockley-Queisser Limit, can be overcome. There are engineering challenges but it should be possible to create solar cells where a field of simple glass based tips (a hundred million per cm2) could be held in tension to sufficiently de-form each semiconductor crystal. If such future engineering could add even a single percentage point of efficiency it would be of immense commercial value to solar cell manufacturers and power suppliers.”

A chemical reactor that operates at extremely high temperatures is being developed by KAUST and could improve the efficiency and economy of a commonly used process in the semiconductor industry, with flow-on benefits for Saudi Arabia’s chemical industry.

The production of semiconductors relies on epitaxy: a process that creates high-quality single-crystal materials by depositing atoms on to a wafer layer by layer, controlling thickness with atomic precision.

The most common method of epitaxy is metalorganic chemical vapor deposition, or MOCVD. Pure vapors of organic molecules containing the desired atoms–for example, boron and nitrogen in the case of boron nitride–are injected into a reaction chamber. The molecules decompose on a heated wafer to leave the semiconductor’s atoms behind on the surface, which bond both to each other and the wafer to form a crystal layer.

Ph.D. student Kuang-Hui Li and a team led by Xiaohang Li at KAUST are developing an MOCVD reactor that can efficiently operate at extremely high temperatures to create high-quality boron nitride and aluminum nitride materials and devices particularly promising for flexible electronics, ultraviolet optoelectronics and power electronics.

The epitaxy of high-quality boron nitride and aluminum nitride have been a huge challenge for the conventional MOCVD process, which usually operates below 1200 degrees Celsius. Epitaxy of these materials responds best to temperatures over 1600 degrees Celsius; however, the most common resistant heaters are not reliable at these temperatures.

Although induction heaters can reach these temperatures, the heating efficiency of the conventional design is low. Because the wasted energy can overheat the gas inlet, it must be placed far away from the wafer, which is problematic for high-quality boron nitride and aluminum nitride due to particle generation and low utilization of organic molecules.

The KAUST team has developed an innovative and low-cost induction heating structure to solve these problems. “Our design can help greatly improve uniformity for up to 12-inch wafers and reduce particle generation, which is crucial for high-quality material and device fabrication,” says Kuang-Hui. “It also allows us to discover new materials.”

The results show significant increase in heating efficiency and reduction in wasted energy. “This equipment research involves many disciplines and is highly complex. However, history has shown that equipment innovation is the key to scientific breakthroughs and industrial revolution,” says Xiaohang Li. “A goal of the research is to set up MOCVD manufacturing activities that can be integrated into the huge chemical industry of Saudi Arabia.”

Over the past decades, computers have become faster and faster and hard disks and storage chips have reached enormous capacities. But this trend cannot continue forever: we are already running up against physical limits that will prevent silicon-based computer technology from attaining any impressive speed gains from this point on. Researchers are particularly optimistic that the next era of technological advancements will start with the development of novel information-processing materials and technologies that combine electrical circuits with optical ones. Using short laser pulses, a research team led by Misha Ivanov of the Max Born Institute in Berlin together with scientists from the Russian Quantum Center in Moscow have now shed light on the extremely rapid processes taking place within these novel materials. Their results have appeared in the prestigious journal Nature Photonics.

Of particular interest for modern material research in solid state physics are “strongly correlated systems”, so called for the strong interactions between the electrons in these materials. Magnets are a good example of this: the electrons in magnets align themselves in a preferred direction of spin inside the material, and it is this that produces the magnetic field. But there are other, entirely different structural orders that deserve attention. In so-called Mott insulators for example, a class of materials now being intensively researched, the electrons ought to flow freely and the materials should therefore be able to conduct electricity as well as metals. But the mutual interaction between electrons in these strongly correlated materials impedes their flow and so the materials behave as insulators instead.

By disrupting this order with a strong laser pulse, the physical properties can be made to change dramatically. This can be likened to a phase transition from solid to liquid: as ice melts, for example, rigid ice crystals transform into free-flowing water molecules. Very similarly, the electrons in a strongly correlated material become free to flow when an external laser pulse forces a phase transition in their structural order. Such phase transitions should allow us to develop entirely new switching elements for next-generation electronics that are faster and potentially more energy efficient than present-day transistors. In theory, computers could be made around a thousand times faster by “turbo-charging” their electrical components with light pulses.

The problem with studying these phase transitions is that they are extremely fast and it is therefore very difficult to “catch them in the act”. So far, scientists have had to content themselves with characterising the state of a material before and after a phase transition of this kind. Researchers Rui E. F. Silva, Olga Smirnova, and Misha Ivanov of the Berlin Max Born Institute, however, have now devised a method that will, in the truest sense, shed light on the process. Their theory involves firing extremely short, tailored laser pulses at a material – pulses that can only recently be produced in the appropriate quality given the latest developments in lasers. One then observes the material’s reaction to these pulses to see how the electrons in the material are excited into motion and, like a bell, emit resonant vibrations at specific frequencies, as harmonics of the incident light.

“By analysing this high harmonic spectrum, we can observe the change in the structural order in these strongly correlated materials ‘live’ for the first time,” says first author of the paper Rui Silva of the Max Born Institute. Laser sources capable of targetedly triggering these transitions have only been available since very recently. The laser pulses namely have to be amply strong and extremely short – on the order of femtoseconds in duration (millionths of a billionth of a second).

In some cases, it takes only a single oscillation of light to disrupt the electronic order of a material and turn an insulator into a metal-like conductor. The scientists at the Berlin Max Born Institute are among the world’s leading experts in the field of ultrashort laser pulses.

“If we want to use light to control the properties of electrons in a material, then we need to know exactly how the electrons will react to light pulses,” Ivanov explains. With the latest-generation laser sources, which allow full control over the electromagnetic field even down to a single oscillation, the newly published method will allow deep insights into the materials of the future.

Researchers from Tomsk Polytechnic University together with their international colleagues have discovered a method to modify and use the one-atom thin conductor of current and heat, graphene without destroying it. Thanks to the novel method, the researchers were able to synthesize on single-layer graphene a well-structured polymer with a strong covalent bond, which they called ‘polymer carpets’. The entire structure is highly stable; it is less prone to degradation over time that makes the study promising for the development of flexible organic electronics. Also, if a layer of molybdenum disulfide is added over the ‘nanocarpet’, the resulting structure generates current under exposure to light. The study results were published in Journal of Materials Chemistry C.

This is the scheme for obtaining a hybrid structure of 'graphene-polymer'. Credit: Tomsk Polytechnic University

This is the scheme for obtaining a hybrid structure of ‘graphene-polymer’. Credit: Tomsk Polytechnic University

Graphene is simultaneously the most durable, light and an electrically conductive carbon material. It can be used for manufacturing solar batteries, smartphone screens, thin and flexible electronics, and even in water filters since graphene films pass water molecules and stop all other compounds. Graphene should be integrated into complex structures to be used successfully. However, it is a challenge to do that. According to scientists, graphene itself is stable enough and reacts poorly with other compounds. In order to make it react with other elements, i.e. to modify it, graphene is usually at least partially destroyed. This modification degrades the properties of the materials obtained.

Professor Raul D. Rodriguez from the Research School for Chemistry & Applied Biomedical Sciences says: ‘When functionalizing graphene, you should be very careful. If you overdo it, the unique properties of graphene are lost. Therefore, we decided to follow a different path.

In graphene, there are inevitable nanodefects, for example, at the edges of graphene and wrinkles in the plane. Hydrogen atoms are often attached to such defects. It is this hydrogen that can interact with other chemicals.’

To modify graphene, the authors use a thin metal substrate on which a graphene single-layer is placed. Then graphene is covered with a solution of bromine-polystyrene molecules. The molecules interact with hydrogen and are attached to the existing defects, resulting in polyhexylthiophene (P3HT). Further exposed to light during the photocatalysis, a polymer begins to ‘grow’.

‘In the result, we obtained the samples which structure resembles ‘polymer carpets’ as we call them in the paper. Above such a ‘polymer carpet’ we place molybdenum disulfide. Due to a unique combination of materials, we obtain a ‘sandwich’ structure’ that functions like a solar battery. That is, it generates current when exposed to light. In our experiments a strong covalent bond is established between the molecules of the polymer and graphene, that is critical for the stability of the material obtained,’ notes Rodriguez.

According to the researcher, the method for graphene modification, on the one hand, enables obtaining a very sturdy compound; on the other hand, it is rather simple and cheap as affordable materials are used. The method is versatile because it makes growing very different polymers directly on graphene possible.

‘The strength of the obtained hybrid material is achieved additionally because we do not destroy graphene itself but use pre-existing defects, and a strong covalent bond to polymer molecules. This allows us to consider the study as promising for the development of thin and flexible electronics when solar batteries can be attached to clothes, and when deformed they will not break,’ the professor explains.