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A new smart and responsive material can stiffen up like a worked-out muscle, say the Iowa State University engineers who developed it.

Stress a muscle and it gets stronger. Mechanically stress the rubbery material – say with a twist or a bend – and the material automatically stiffens by up to 300 percent, the engineers said. In lab tests, mechanical stresses transformed a flexible strip of the material into a hard composite that can support 50 times its own weight.

Examples of the new smart material, left to right: A flexible strip; a flexible strip that stiffened when twisted; a flexible strip transformed into a hard composite that can hold up a weight. Credit: Christopher Gannon/Iowa State University

Examples of the new smart material, left to right: A flexible strip; a flexible strip that stiffened when twisted; a flexible strip transformed into a hard composite that can hold up a weight. Credit: Christopher Gannon/Iowa State University

This new composite material doesn’t need outside energy sources such as heat, light or electricity to change its properties. And it could be used in a variety of ways, including applications in medicine and industry.

The material is described in a paper recently published online by the scientific journal Materials Horizons. The lead authors are Martin Thuo and Michael Bartlett, Iowa State assistant professors of materials science and engineering. First authors are Boyce Chang and Ravi Tutika, Iowa State doctoral students in materials science and engineering. Chang is also a student associate of the U.S. Department of Energy’s Ames Laboratory.

Iowa State startup funds for Thuo and Bartlett supported development of the new material. Thuo’s Black & Veatch faculty fellowship also helped support the project.

Development of the material combined Thuo’s expertise in micro-sized, liquid-metal particles with Bartlett’s expertise in soft materials such as rubbers, plastics and gels.

It’s a powerful combination.

The researchers found a simple, low-cost way to produce particles of undercooled metal – that’s metal that remains liquid even below its melting temperature. The tiny particles (they’re just 1 to 20 millionths of a meter across) are created by exposing droplets of melted metal to oxygen, creating an oxidation layer that coats the droplets and stops the liquid metal from turning solid. They also found ways to mix the liquid-metal particles with a rubbery elastomer material without breaking the particles.

When this hybrid material is subject to mechanical stresses – pushing, twisting, bending, squeezing – the liquid-metal particles break open. The liquid metal flows out of the oxide shell, fuses together and solidifies.

“You can squeeze these particles just like a balloon,” Thuo said. “When they pop, that’s what makes the metal flow and solidify.”

The result, Bartlett said, is a “metal mesh that forms inside the material.”

Thuo and Bartlett said the popping point can be tuned to make the liquid metal flow after varying amounts of mechanical stress. Tuning could involve changing the metal used, changing the particle sizes or changing the soft material.

In this case, the liquid-metal particles contain Field’s metal, an alloy of bismuth, indium and tin. But Thuo said other metals will work, too.

“The idea is that no matter what metal you can get to undercool, you’ll get the same behavior,” he said.

The engineers say the new material could be used in medicine to support delicate tissues or in industry to protect valuable sensors. There could also be uses in soft and bio-inspired robotics or reconfigurable and wearable electronics. The Iowa State University Research Foundation is working to patent the material and it is available for licensing.

“A device with this material can flex up to a certain amount of load,” Bartlett said. “But if you continue stressing it, the elastomer will stiffen and stop or slow down these forces.”

And that, the engineers say, is how they’re putting some muscle in their new smart material.

 

Graphene on toast, anyone?


February 13, 2018

Rice University scientists who introduced laser-induced graphene (LIG) have enhanced their technique to produce what may become a new class of edible electronics.

Rice University graduate student Yieu Chyan, left, and Professor James Tour. Credit: Jeff Fitlow/Rice University

Rice University graduate student Yieu Chyan, left, and Professor James Tour. Credit: Jeff Fitlow/Rice University

The Rice lab of chemist James Tour, which once turned Girl Scout cookies into graphene, is investigating ways to write graphene patterns onto food and other materials to quickly embed conductive identification tags and sensors into the products themselves.

“This is not ink,” Tour said. “This is taking the material itself and converting it into graphene.”

The process is an extension of the Tour lab’s contention that anything with the proper carbon content can be turned into graphene. In recent years, the lab has developed and expanded upon its method to make graphene foam by using a commercial laser to transform the top layer of an inexpensive polymer film.

The foam consists of microscopic, cross-linked flakes of graphene, the two-dimensional form of carbon. LIG can be written into target materials in patterns and used as a supercapacitor, an electrocatalyst for fuel cells, radio-frequency identification (RFID) antennas and biological sensors, among other potential applications.

The new work reported in the American Chemical Society journal ACS Nano demonstrated that laser-induced graphene can be burned into paper, cardboard, cloth, coal and certain foods, even toast.

“Very often, we don’t see the advantage of something until we make it available,” Tour said. “Perhaps all food will have a tiny RFID tag that gives you information about where it’s been, how long it’s been stored, its country and city of origin and the path it took to get to your table.”

He said LIG tags could also be sensors that detect E. coli or other microorganisms on food. “They could light up and give you a signal that you don’t want to eat this,” Tour said. “All that could be placed not on a separate tag on the food, but on the food itself.”

Multiple laser passes with a defocused beam allowed the researchers to write LIG patterns into cloth, paper, potatoes, coconut shells and cork, as well as toast. (The bread is toasted first to “carbonize” the surface.) The process happens in air at ambient temperatures.

“In some cases, multiple lasing creates a two-step reaction,” Tour said. “First, the laser photothermally converts the target surface into amorphous carbon. Then on subsequent passes of the laser, the selective absorption of infrared light turns the amorphous carbon into LIG. We discovered that the wavelength clearly matters.”

The researchers turned to multiple lasing and defocusing when they discovered that simply turning up the laser’s power didn’t make better graphene on a coconut or other organic materials. But adjusting the process allowed them to make a micro supercapacitor in the shape of a Rice “R” on their twice-lased coconut skin.

Defocusing the laser sped the process for many materials as the wider beam allowed each spot on a target to be lased many times in a single raster scan. That also allowed for fine control over the product, Tour said. Defocusing allowed them to turn previously unsuitable polyetherimide into LIG.

“We also found we could take bread or paper or cloth and add fire retardant to them to promote the formation of amorphous carbon,” said Rice graduate student Yieu Chyan, co-lead author of the paper. “Now we’re able to take all these materials and convert them directly in air without requiring a controlled atmosphere box or more complicated methods.”

The common element of all the targeted materials appears to be lignin, Tour said. An earlier study relied on lignin, a complex organic polymer that forms rigid cell walls, as a carbon precursor to burn LIG in oven-dried wood. Cork, coconut shells and potato skins have even higher lignin content, which made it easier to convert them to graphene.

Tour said flexible, wearable electronics may be an early market for the technique. “This has applications to put conductive traces on clothing, whether you want to heat the clothing or add a sensor or conductive pattern,” he said.

Brooks Instrument will showcase its newly enhanced GF125 mass flow controller (MFC) with high-speed EtherCAT connectivity and embedded self-diagnostics at the China Semiconductor Technology International Conference (CSTIC) in conjunction with SEMICON China 2018 in Shanghai.

CSTIC runs March 11-12 at the Shanghai International Convention Center, while SEMICON China takes place March 14-16 at the Shanghai New International Expo Center.

Building on the company’s proven GF Series of MFCs with EtherCAT connectivity for high-speed communications, the newly enhanced GF125 MFC features embedded self-diagnostics that automatically detect sensor drift and valve leak-by to help minimize tool downtime and improve process yield. As a result, the enhanced GF125 can run leak and drift self-diagnostics without interrupting process flow steps or requiring any hardware changes, thereby improving process gas accuracy and wafer production throughput.

Technology experts from Brooks Instrument will discuss the newly enhanced GF125 MFC capabilities with a presentation on “Advanced Mass Flow Controllers With EtherCAT Communication Protocol and Embedded Self-Diagnostics” during the CSTIC poster session.

For SEMICON China, Brooks Instrument will be co-exhibiting in booth 3675 with its regional business partner, SCH Electronics Co., Ltd., to demonstrate the newly enhanced GF125 MFC with high-speed EtherCAT connectivity and embedded self-diagnostics, along with a broad range of other mass flow meters and controllers and pressure and vacuum products for semiconductor manufacturing.

“At Brooks Instrument, we’re eager to present and exhibit at the China Semiconductor Technology International Conference and SEMICON China tradeshow,” said Mohamed Saleem, Chief Technology Officer at Brooks Instrument. “With more than 70 years of history in new technology developments, our company is focused on improving the precision and performance of mass flow, pressure and vacuum technologies to help enable advanced semiconductor manufacturing and address the challenges involved with next-generation production tools and processes.”

In addition to the newly enhanced GF125 MFC with high-speed EtherCAT connectivity and embedded self-diagnostics, Brooks Instrument will showcase other key components designed to meet critical gas chemistry control challenges and improve process yields for nodes 10nm and below, including the VDM300 vapor delivery module as well as other proven MFCs with EtherCAT.

INFICON,a manufacturer of leak test equipment, introduced the UL3000 Fab leak detector for semiconductor manufacturing maintenance teams to easily check the tightness of vacuum chambers for wafer production. Special advantages of the new leak detector are its fast readiness and unrivaled simplicity enabling the operator to find leaks of all sizes with the same procedures. It also has a slim mobile design for easy maneuverability and an intuitive operating concept for easy operation. The UL3000 Fab, which uses helium as a test gas, detects even the smallest leakage rates up to 5 x 10-12 atm cc/, thus providing the highest seal confirmation tightness of vacuum chambers for wafer production.

Daniel Hoffman, Sales and Service Manager for Leak Detection in the Americas, sees the new model as a big step forward. “Constantly innovating and optimizing our products to meet customer needs is a core goal for INFICON. With our new UL3000 Fab we will enable leak detection productivity gains never before seen in the semiconductor leak testing process,” said Hoffman.

The powerful, compact and smart leak detector enables testing at atmospheric pressure (through MASSIVE leak function) with best in class time to test or background generation, saturation protection, smart power and PM saving control all in a compact package. With its narrow design (only 18.6 inches wide), the mobile leak detector is designed for high maneuverability. Also, UL3000 Fab features robust construction, a deep center of gravity and large tires to ensure optimum mobility.

UL3000Fab_sil_right_MEDIUM

MACOM Technology Solutions Holdings, Inc. (NASDAQ: MTSI) (“MACOM”), a supplier of high-performance RF, microwave, millimeterwave and lightwave semiconductor products, and STMicroelectronics (NYSE: STM) today announced an agreement to develop GaN (Gallium Nitride) on Silicon wafers to be manufactured by ST for MACOM’s use across an array of RF applications. While expanding MACOM’s source of supply, the agreement also grants to ST the right to manufacture and sell its own GaN on Silicon products in RF markets outside of mobile phone, wireless basestation and related commercial telecom infrastructure applications.

Through this agreement, MACOM expects to access increased Silicon wafer manufacturing capacity and improved cost structure that could displace incumbent Silicon LDMOS and accelerate the adoption of GaN on Silicon in mainstream markets. ST and MACOM have been working together for several years to bring GaN on Silicon production up in ST’s CMOS wafer fab. As currently scheduled, sample production from ST is expected to begin in 2018.

“This agreement punctuates our long journey of leading the RF industry’s conversion to GaN on Silicon technology. To date, MACOM has refined and proven the merits of GaN on Silicon using rather modest compound semiconductor factories, replicating and even exceeding the RF performance and reliability of expensive GaN on SiC alternative technology,” said John Croteau, President and CEO, MACOM. “We expect this collaboration with ST to bring those GaN innovations to bear in a Silicon supply chain that can ultimately service the most demanding customers and applications.”

“ST’s scale and operational excellence in Silicon wafer manufacturing aims to unlock the potential to drive new RF power applications for MACOM and ST as it delivers the economic breakthroughs necessary to expand the market for GaN on Silicon,” said Marco Monti, President of the Automotive and Discrete Product Group, STMicroelectronics. “While expanding the opportunities for existing RF applications is appealing, we’re even more excited about using GaN on Silicon in new RF Energy applications, especially in automotive applications, such as plasma ignition for more efficient combustion in conventional engines, and in RF lighting applications, for more efficient and longer-lasting lighting systems.”

“Once the $0.04/watt barrier for high power RF semiconductor devices is crossed, significant opportunities for the RF energy market may open up,” said Eric Higham, Director Advanced Semiconductor Applications Service at Strategy Analytics. Higham continued, “Potential RF energy device shipments could be in the hundreds of millions for applications including commercial microwave cooking, automotive lighting and ignition, and plasma lighting, with sales reaching into the billions of dollars.”

Graphene is a remarkable material: light, strong, transparent and electrically conductive. It can also convert heat to electricity. Researchers have recently exploited this thermoelectric property to create a new kind of radiation detector.

Classified as a bolometer, the new device has a fast response time and, unlike most other bolometers, works over a wide range of temperatures. With a simple design and relatively low cost, this device could be scaled up, enabling a wide range of commercial applications. Researchers describe a graphene-based radiation detector this week in Applied Physics Letters, from AIP Publishing.

The discovery of graphene in 2004 was anticipated to herald a whole new type of technology. “But unfortunately, there are some strong fundamental limitations for this material,” said Grigory Skoblin of Chalmers University of Technology in Sweden. “Nowadays, the real industrial applications of graphene are quite limited.”

Graphene — composed of single sheets of carbon atoms that form a flat, hexagonal lattice structure — has been used mainly for its mechanical properties.

“But our device shows that more fundamental properties can be used in actual applications,” Skoblin said. The new bolometer is based on graphene’s thermoelectric properties. Radiation heats part of the device, inducing electrons to move. The displaced electrons generate an electric field, which creates a voltage difference across the device. The change in voltage thus provides an essentially direct measurement of the radiation.

Other devices rely on the generation of electrical current or resistance change by incoming radiation. But measuring changes in current or resistance requires an external power source to generate an initial current. The mechanism is much simpler than in other bolometers, according to Skoblin.

The piece of graphene in the new bolometer is small, so it’s one of the fastest bolometers because it heats up and responds quickly. Furthermore, the device remains sensitive to radiation at temperatures up to 200 degrees Celsius. Conventional bolometers typically work only at cryogenic temperatures.

Other researchers have previously made graphene bolometers, with better properties than this new device, but these models contain a double layer of graphene, making them more difficult to scale, Skoblin said.

Another advantage of the new device is its coating. The researchers previously developed a method to coat graphene with a dielectric polymer called Parylene, which offers a good balance of performance and scalability. You can get better performance by coating with hexagonal boron nitride, Skoblin said, but it’s hard to acquire and the coating techniques are difficult to scale up. Other studies suggest that a bolometer with hexagonal boron nitride coating would be less efficient.

The prototype bolometer works only with microwave radiation at 94 gigahertz, but future designs will widen the frequency range. Next, the researchers plan to make the device using chemical vapor deposition to grow larger pieces of graphene, paving the way for mass production.

Silicon has long been the go-to material in the world of microelectronics and semiconductor technology. But silicon still faces limitations, particularly with scalability for power applications. Pushing semiconductor technology to its full potential requires smaller designs at higher energy density.

“One of the largest shortcomings in the world of microelectronics is always good use of power: Designers are always looking to reduce excess power consumption and unnecessary heat generation,” said Gregg Jessen, principal electronics engineer at the Air Force Research Laboratory. “Usually, you would do this by scaling the devices. But the technologies in use today are already scaled close to their limits for the operating voltage desired in many applications. They are limited by their critical electric field strength.”

This is a false-color, plan-view SEM image of a lateral gallium oxide field effect transistor with an optically defined gate. From near (bottom) to far (top): the source, gate, and drain electrodes. Metal is shown in yellow and orange, dark blue represents dielectric material, and lighter blue denotes the gallium oxide substrate. Credit: AFRL Sensors Directorate at WPAFB, Ohio, US

This is a false-color, plan-view SEM image of a lateral gallium oxide field effect transistor with an optically defined gate. From near (bottom) to far (top): the source, gate, and drain electrodes. Metal is shown in yellow and orange, dark blue represents dielectric material, and lighter blue denotes the gallium oxide substrate. Credit: AFRL Sensors Directorate at WPAFB, Ohio, US

Transparent conductive oxides are a key emerging material in semiconductor technology, offering the unlikely combination of conductivity and transparency over the visual spectrum. One conductive oxide in particular has unique properties that allow it to function well in power switching: Ga2O3, or gallium oxide, a material with an incredibly large bandgap.

In their article published this week in Applied Physics Letters, from AIP Publishing, authors Masataka Higashiwaki and Jessen outline a case for producing microelectronics using gallium oxide. The authors focus on field effect transistors (FETs), devices that could greatly benefit from gallium oxide’s large critical electric field strength. a quality which Jessen said could enable the design of FETs with smaller geometries and aggressive doping profiles that would destroy any other FET material.

The material’s flexibility for various applications is due to its broad range of possible conductivities — from highly conductive to very insulating — and high-breakdown-voltage capabilities due to its electric field strength. Consequently, gallium oxide can be scaled to an extreme degree. Large-area gallium oxide wafers can also be grown from the melt, lowering manufacturing costs.

“The next application for gallium oxide will be unipolar FETs for power supplies,” Jessen said. “Critical field strength is the key metric here, and it results in superior energy density capabilities. The critical field strength of gallium oxide is more than 20 times that of silicon and more than twice that of silicon carbide and gallium nitride.”

The authors discuss manufacturing methods for Ga2O3 wafers, the ability to control electron density, and the challenges with hole transport. Their research suggests that unipolar Ga2O3 devices will dominate. Their paper also details Ga2O3 applications in different types of FETs and how the material can be of service in high-voltage, high-power and power-switching applications.

“From a research perspective, gallium oxide is really exciting,” Jessen said. “We are just beginning to understand the full potential of these devices for several applications, and it’s a great time to be involved in the field.”

First came the switch. Then the transistor. Now another innovation stands to revolutionize the way we control the flow of electrons through a circuit: vanadium dioxide (VO2). A key characteristic of this compound is that it behaves as an insulator at room temperature but as a conductor at temperatures above 68°C. This behavior – also known as metal-insulator transition – is being studied in an ambitious EU Horizon 2020 project called Phase-Change Switch. EPFL was chosen to coordinate the project following a challenging selection process.

The project will last until 2020 and has been granted €3.9 million of EU funding. Due to the array of high-potential applications that could come out of this new technology, the project has attracted two major companies – Thales of France and the Swiss branch of IBM Research – as well as other universities, including Max-Planck-Gesellschaft in Germany and Cambridge University in the UK. Gesellschaft für Angewandte Mikro- und Optoelektronik (AMO GmbH), a spin-off of Aachen University in Germany, is also taking part in the research.

Scientists have long known about the electronic properties of VO2 but haven’t been able to explain them until know. It turns out that its atomic structure changes as the temperature rises, transitioning from a crystalline structure at room temperature to a metallic one at temperatures above 68°C. And this transition happens in less than a nanosecond – a real advantage for electronics applications. “VO2 is also sensitive to other factors that could cause it to change phases, such as by injecting electrical power, optically, or by applying a THz radiation pulse,” says Adrian Ionescu, the EPFL professor who heads the school’s Nanoelectronic Devices Laboratory (Nanolab) and also serves as the Phase-Change Switch project coordinator.

The challenge: reaching higher temperatures

However, unlocking the full potential of VO2 has always been tricky because its transition temperature of 68°C is too low for modern electronic devices, where circuits must be able to run flawlessly at 100°C. But two EPFL researchers – Ionescu from the School of Engineering (STI) and Andreas Schüler from the School of Architecture, Civil and Environmental Engineering (ENAC) – may have found a solution to this problem, according to their joint research published in Applied Physics Letters in July 2017. They found that adding germanium to VO2 film can lift the material’s phase change temperature to over 100°C.

Even more interesting findings from the Nanolab – especially for radiofrequency applications – were published in IEEE Access on 2 February 2018. For the first time ever, scientists were able to make ultra-compact, modulable frequency filters. Their technology also uses VO2 and phase-change switches, and is particularly effective in the frequency range crucial for space communication systems (the Ka band, with programmable frequency modulation between 28.2 and 35 GHz).

Neuromorphic processors and autonomous vehicles

These promising discoveries are likely to spur further research into applications for VO2 in ultra-low-power electronic devices. In addition to space communications, other fields could include neuromorphic computing and high-frequency radars for self-driving cars.

Researchers at the University of Illinois at Chicago describe a new technique for precisely measuring the temperature and behavior of new two-dimensional materials that will allow engineers to design smaller and faster microprocessors. Their findings are reported in the journal Physical Review Letters.

Newly developed two-dimensional materials, such as graphene — which consists of a single layer of carbon atoms — have the potential to replace traditional microprocessing chips based on silicon, which have reached the limit of how small they can get. But engineers have been stymied by the inability to measure how temperature will affect these new materials, collectively known as transition metal dichalcogenides, or TMDs.

Using scanning transmission electron microscopy combined with spectroscopy, researchers at UIC were able to measure the temperature of several two-dimensional materials at the atomic level, paving the way for much smaller and faster microprocessors. They were also able to use their technique to measure how the two-dimensional materials would expand when heated.

“Microprocessing chips in computers and other electronics get very hot, and we need to be able to measure not only how hot they can get, but how much the material will expand when heated,” said Robert Klie, professor of physics at UIC and corresponding author of the paper. “Knowing how a material will expand is important because if a material expands too much, connections with other materials, such as metal wires, can break and the chip is useless.”

Traditional ways to measure temperature don’t work on tiny flakes of two-dimensional materials that would be used in microprocessors because they are just too small. Optical temperature measurements, which use a reflected laser light to measure temperature, can’t be used on TMD chips because they don’t have enough surface area to accommodate the laser beam.

“We need to understand how heat builds up and how it is transmitted at the interface between two materials in order to build efficient microprocessors that work,” said Klie.

Klie and his colleagues devised a way to take temperature measurements of TMDs at the atomic level using scanning transition electron microscopy, which uses a beam of electrons transmitted through a specimen to form an image.

“Using this technique, we can zero in on and measure the vibration of atoms and electrons, which is essentially the temperature of a single atom in a two-dimensional material,” said Klie. Temperature is a measure of the average kinetic energy of the random motions of the particles, or atoms that make up a material. As a material gets hotter, the frequency of the atomic vibration gets higher. At absolute zero, the lowest theoretical temperature, all atomic motion stops.

Klie and his colleagues heated microscopic “flakes” of various TMDs inside the chamber of a scanning transmission electron microscope to different temperatures and then aimed the microscope’s electron beam at the material. Using a technique called electron energy-loss spectroscopy, they were able to measure the scattering of electrons off the two-dimensional materials caused by the electron beam. The scattering patterns were entered into a computer model that translated them into measurements of the vibrations of the atoms in the material – in other words, the temperature of the material at the atomic level.

“With this new technique, we can measure the temperature of a material with a resolution that is nearly 10 times better than conventional methods,” said Klie. “With this new approach, we can design better electronic devices that will be less prone to overheating and consume less power.”

The technique can also be used to predict how much materials will expand when heated and contract when cooled, which will help engineers build chips that are less prone to breaking at points where one material touches another, such as when a two-dimensional material chip makes contact with a wire.

“No other method can measure this effect at the spatial resolution we report,” said Klie. “This will allow engineers to design devices that can manage temperature changes between two different materials at the nano-scale level.”

The end of the silicon age has begun. As computer chips approach the physical limits of miniaturization and power-hungry processors drive up energy costs, scientists are looking to a new crop of exotic materials that could foster a new generation of computing devices that promise to push performance to new heights while skimping on energy consumption.

Unlike current silicon-based electronics, which shed most of the energy they consume as waste heat, the future is all about low-power computing. Known as spintronics, this technology relies on a quantum physical property of electrons — up or down spin — to process and store information, rather than moving them around with electricity as conventional computing does.

On the quest to making spintronic devices a reality, scientists at the University of Arizona are studying an exotic crop of materials known as transition metal dichalcogenides, or TMDs. TMDs have exciting properties lending themselves to new ways of processing and storing information and could provide the basis of future transistors and photovoltaics — and potentially even offer an avenue toward quantum computing.

For example, current silicon-based solar cells convert realistically only about 25 percent of sunlight into electricity, so efficiency is an issue, says Calley Eads, a fifth-year doctoral student in the UA’s Department of Chemistry and Biochemistry who studies some of the properties of these new materials. “There could be a huge improvement there to harvest energy, and these materials could potentially do this,” she says.

There is a catch, however: Most TMDs show their magic only in the form of sheets that are very large, but only one to three atoms thin. Such atomic layers are challenging enough to manufacture on a laboratory scale, let alone in industrial mass production.

Many efforts are underway to design atomically thin materials for quantum communication, low-power electronics and solar cells, according to Oliver Monti, a professor in the department and Eads’ adviser. Studying a TMD consisting of alternating layers of tin and sulfur, his research team recently discovered a possible shortcut, published in the journal Nature Communications.

“We show that for some of these properties, you don’t need to go to the atomically thin sheets,” he says. “You can go to the much more readily accessible crystalline form that’s available off the shelf. Some of the properties are saved and survive.”

Understanding electron movement

This, of course, could dramatically simplify device design.

“These materials are so unusual that we keep discovering more and more about them, and they are revealing some incredible features that we think we can use, but how do we know for sure?” Monti says. “One way to know is by understanding how electrons move around in these materials so we can develop new ways of manipulating them — for example, with light instead of electrical current as conventional computers do.”

To do this research, the team had to overcome a hurdle that never had been cleared before: figure out a way to “watch” individual electrons as they flow through the crystals.

“We built what is essentially a clock that can time moving electrons like a stopwatch,” Monti says. “This allowed us to make the first direct observations of electrons move in crystals in real time. Until now, that had only been done indirectly, using theoretical models.”

The work is an important step toward harnessing the unusual features that make TMDs intriguing candidates for future processing technology, because that requires a better understanding of how electrons behave and move around in them.

Monti’s “stopwatch” makes it possible to track moving electrons at a resolution of a mere attosecond — a billionth of a billionth of a second. Tracking electrons inside the crystals, the team made another discovery: The charge flow depends on direction, an observation that seems to fly in the face of physics.

Collaborating with Mahesh Neupane, a computational physicist at Army Research Laboratories, and Dennis Nordlund, an X-ray spectroscopy expert at Stanford University’s SLAC National Accelerator Laboratory, Monti’s team used a tunable, high-intensity X-ray source to excite individual electrons in their test samples and elevate them to very high energy levels.

“When an electron is excited in that way, it’s the equivalent of a car that is being pushed from going 10 miles per hour to thousands of miles per hour,” Monti explains. “It wants to get rid of that enormous energy and fall back down to its original energy level. That process is extremely short, and when that happens, it gives off a specific signature that we can pick up with our instruments.”

The researchers were able to do this in a way that allowed them to distinguish whether the excited electrons stayed within the same layer of the material, or spread into adjacent layers across the crystal.

“We saw that electrons excited in this way scattered within the same layer and did so extremely fast, on the order of a few hundred attoseconds,” Monti says.

In contrast, electrons that did cross into adjacent layers took more than 10 times longer to return to their ground energy state. The difference allowed the researchers to distinguish between the two populations.

“I was very excited to find that directional mechanism of charge distribution occurring within a layer, as opposed to across layers,” says Eads, the paper’s lead author. “That had never been observed before.”

Closer to mass manufacturing

The X-ray “clock” used to track electrons is not part of the envisioned applications but a means to study the behavior of electrons inside them, Monti explains, a necessary first step in getting closer toward technology with the desired properties that could be mass-manufactured.

“One example of the unusual behavior we see in these materials is that an electron going to the right is not the same as an electron going to the left,” he says. “That shouldn’t happen — according to physics of standard materials, going to the left or the right is the exact same thing. However, for these materials that is not true.”

This directionality is an example of what makes TMDs intriguing to scientists, because it could be used to encode information.

“Moving to the right could be encoded as ‘one’ and going to the left as ‘zero,'” Monti says. “So if I can generate electrons that neatly go to the right, I’ve written a bunch of ones, and if I can generate electrons that neatly go to the left, I have generated a bunch of zeroes.”

Instead of applying electrical current, engineers could manipulate electrons in this way using light such as a laser, to optically write, read and process information. And perhaps someday it may even become possible to optically entangle information, clearing the way to quantum computing.

“Every year, more and more discoveries are occurring in these materials,” Eads says. “They are exploding in terms of what kinds of electronic properties you can observe in them. There is a whole spectrum of ways in which they can function, from superconducting, semiconducting to insulating, and possibly more.”

The research described here is just one way of probing the unexpected, exciting properties of layered TMD crystals, according to Monti.

“If you did this experiment in silicon, you wouldn’t see any of this,” he says. “Silicon will always behave like a three-dimensional crystal, no matter what you do. It’s all about the layering.”