Tag Archives: letter-wafer-tech

Novati Technologies Inc., a global nanotechnology development center, today announced the availability of the industry’s most advanced Integrated Sensor Platform, placing a wide variety of sensors onto multi-layer stacks of wafers in order to consume less power and perform significantly faster while reducing overall footprint. Already proven for customer devices at Novati’s commercial development and manufacturing center, the platform paves the way for stacking single or multiple sensors with a broad selection of popular–as well as emerging–substrate materials, enabling new high-end applications for markets that include medical, semiconductors, photonics, security, and aerospace.

Demonstrating a version of this capability for high-performance computing, Novati last month jointly announced with Tezzaron Semiconductor the industry’s first eight-layer 3D IC wafer stack containing active logic, which controls the memory layers. The transistor and interconnect densities per cubic millimeter were far higher than achievable with 2D 14nm silicon fabrication, representing the densest 3D IC ever reported. Not limited to the high-end markets served by that achievement, Novati’s Integrated Sensor Platform also offers great promise as an enabler for the Internet of Things (IoT).

“Energy harvesting is one of the important capabilities needed for the broad set of markets that aim to utilize the integration of sensing and processing,” said Tony Massimini, Chief of Technology for Semico Research. “Novati’s platform offers technology for integrating this energy harvesting ecosystem that includes energy generator, converters, power management, MCUs, energy storage and connectivity for small, wireless autonomous devices, like those used in wearable electronics and wireless sensor networks.”

For the past three years, Novati has demonstrated wafer-to-wafer integration of up to eight wafers, as well as custom sensors integrated directly onto mainstream CMOS architectures. With 3D manufacturing options available on both 200mm and 300mm lines, Novati offers circuit designers an unprecedented degree of freedom to architect the smart sensors of the future.

“While the ability to create multi-chip devices has been around for decades, Novati’s innovative sensor platform can accelerate the Internet of Things by expanding the ways for devices to connect and interact with all types of environments,” said David Anderson, President and CEO of Novati. “Using this platform, the world can integrate novel sensor functionality to virtually any circuitry, including digital logic, analog, mixed signal and memory–and stacking multiple sensors will soon follow. This opens a new, unlimited landscape for designers to significantly improve functionality while reducing costs and time to market.”

As an example of Novati’s substrate integration, their nanomanufacturing site bonded Tezzaron’s wafers directly, wafer-to-wafer, producing devices that can be thinned and finished to the same thickness as conventional 2D dies. The result was excellent electrical, thermal and mechanical performance. Novati’s capability to integrate sensors with such a stacked platform already has led to novel, proprietary product development for several customers.

Building on its ability to provide the world’s most advanced Integrated Sensor Platform and other innovations for the microelectronics markets, Novati intends to open its next office in Europe, where site selection is underway. In order to jointly plan new devices using novel materials that enable micro- and nanoscale functions and analyses, the company will be meeting with companies from around the globe during its participation at SEMICON Europa electronics conference in Dresden for the week of October 6.

“Europe has always been an important market for us and we are excited to continue expansion in this area,” said Julian Searle, Director of Account Management for Novati. “As the innovation initiatives in Europe continue to progress, Novati’s commercialization services and solutions are often the first call for technical pioneers that need to transform great ideas into great products.”

To the growing list of two-dimensional semiconductors, such as graphene, boron nitride, and molybdenum disulfide, whose unique electronic properties make them potential successors to silicon in future devices, you can now add hybrid organic-inorganic perovskites. However, unlike the other contenders, which are covalent semiconductors, these 2D hybrid perovskites are ionic materials, which gives them special properties of their own.

Researchers at the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab) have successfully grown atomically thin 2D sheets of organic-inorganic hybrid perovskites from solution. The ultrathin sheets are of high quality, large in area, and square-shaped. They also exhibited efficient photoluminescence, color-tunability, and a unique structural relaxation not found in covalent semiconductor sheets.

“We believe this is the first example of 2D atomically thin nanostructures made from ionic materials,” says Peidong Yang, a chemist with Berkeley Lab’s Materials Sciences Division and world authority on nanostructures, who first came up with the idea for this research some 20 years ago. “The results of our study open up opportunities for fundamental research on the synthesis and characterization of atomically thin 2D hybrid perovskites and introduces a new family of 2D solution-processed semiconductors for nanoscale optoelectronic devices, such as field effect transistors and photodetectors.”

Yang, who also holds appointments with the University of California (UC) Berkeley and is a co-director of the Kavli Energy NanoScience Institute (Kavli-ENSI), is the corresponding author of a paper describing this research in the journal Science. The paper is titled “Atomically thin two-dimensional organic-inorganic hybrid perovskites.” The lead authors are Letian Dou, Andrew Wong and Yi Yu, all members of Yang’s research group. Other authors are Minliang Lai, Nikolay Kornienko, Samuel Eaton, Anthony Fu, Connor Bischak, Jie Ma, Tina Ding, Naomi Ginsberg, Lin-Wang Wang and Paul Alivisatos.

Traditional perovskites are typically metal-oxide materials that display a wide range of fascinating electromagnetic properties, including ferroelectricity and piezoelectricity, superconductivity and colossal magnetoresistance. In the past couple of years, organic-inorganic hybrid perovskites have been solution-processed into thin films or bulk crystals for photovoltaic devices that have reached a 20 percent power conversion efficiency. Separating these hybrid materials into individual, free-standing 2D sheets through such techniques as spin-coating, chemical vapor deposition, and mechanical exfoliation has met with limited success.

In 1994, while a PhD student at Harvard University, Yang proposed a method for preparing 2D hybrid perovskite nanostructures and tuning their electronic properties but never acted upon it. This past year, while preparing to move his office, he came upon the proposal and passed it on to co-lead author Dou, a post-doctoral student in his research group. Dou, working mainly with the other lead authors Wong and Yu, used Yang’s proposal to synthesize free-standing 2D sheets of CH3NH3PbI3, a hybrid perovskite made from a blend of lead, bromine, nitrogen, carbon and hydrogen atoms.

“Unlike exfoliation and chemical vapor deposition methods, which normally produce relatively thick perovskite plates, we were able to grow uniform square-shaped 2D crystals on a flat substrate with high yield and excellent reproducibility,” says Dou. “We characterized the structure and composition of individual 2D crystals using a variety of techniques and found they have a slightly shifted band-edge emission that could be attributed to structural relaxation. A preliminary photoluminescence study indicates a band-edge emission at 453 nanometers, which is red-shifted slightly as compared to bulk crystals. This suggests that color-tuning could be achieved in these 2D hybrid perovskites by changing sheet thickness as well as composition via the synthesis of related materials.”

The well-defined geometry of these square-shaped 2D crystals is the mark of high quality crystallinity, and their large size should facilitate their integration into future devices.

“With our technique, vertical and lateral heterostructures can also be achieved,” Yang says. “This opens up new possibilities for the design of materials/devices on an atomic/molecular scale with distinctive new properties.”

The research was supported by DOE’s Office of Science. The characterization work was carried out at the Molecular Foundry’s National Center for Electron Microscopy, and at beamline 7.3.3 of the Advanced Light Source. The Molecular Foundry and the Advanced Light Source are DOE Office of Science User Facilities hosted at Berkeley Lab.

X-FAB Silicon Foundries, a More-than-Moore foundry, today announced new transistors that have drastically reduced flicker noise on its mixed-signal 0.35µm and 0.18µm CMOS process platforms. Flicker noise in CMOS MOSFETs has been reduced in both the n-channel device in the XH035 0.35µm process and the p-channel device in the XH018 0.18µm process by a factor of five, thereby setting the industry benchmark.

The new XH035 3.3V n-channel MOSFET has a lower flicker noise comparable to that of its companion XH035 3.3V p-channel MOSFET, when referenced to its input, and maintains the standard n-channel MOSFET’s threshold voltage and current drive capability. Using both types of low-noise transistors it is possible to design improved, lower-noise amplifier variants with a significantly higher signal-to-noise ratio (SNR), and to make circuits that are more compact with better performance and are more cost-effective. Similarly, the new 0.18µm process XH018 3.3V p-channel MOSFET exhibits a much lower flicker noise level than the standard p-channel device. The new low-noise XH018 3.3V p-channel device behavior now is similar to that of the low-noise XH035 3.3V p-channel MOSFET device.

Dr. Jens Kosch, Chief Technical Officer at X-FAB, explained the significance and cost-effectiveness of the new low-noise CMOS transistors: “For years X-FAB has set the benchmark for low-noise transistors with our p-channel MOSFET transistor in our 0.35µm technology. When our customers asked for additional low-noise transistors, we developed our XH035 low-noise n-channel MOS transistor (NMOS) and our XH018 p-channel MOS transistor. The combination of the complementary XH035 n- and p-channel transistors offers designers more freedom in their circuit designs. No longer are they limited to only a low-noise p-channel device, and they benefit from having no additional mask layer expense. In addition, the new XH018 p-channel device makes it possible to develop noise-critical designs for 0.18µm processes.”

The new 0.35µm lower-noise n-channel transistor and its low-noise p-channel counterpart, integrated within the XH035 process design kit (PDK), are available immediately for new designs. Noise parameters are included within the device models to facilitate an accurate simulation of the noise behavior of a circuit prior to its actual use. For the 0.18µm XH018 process, the new lower-noise 3.3V p-channel MOSFET will become available for new designs in November 2015.

Tektronix, Inc., a worldwide provider of test, measurement and monitoring instrumentation, today announced the release of a major system software update (KTE version 5.6) for the Keithley S530 Parametric Test System that can reduce measurement speed by as much as 25 percent. This translates into increased wafer-level test throughput and directly improves the S530’s cost of ownership (COO) for semiconductor production and R&D departments.

Lower manufacturing costs and increased yields are key goals for semiconductor production companies who must also deal with evolving materials and device structures. In-line parametric test throughput and overall COO are directly related to the time it takes to complete all necessary measurements across semiconductor wafers. This new release of the Keithley Test Environment (KTE) software for the popular S530 steps up to these demands by delivering a significant improvement in test performance.

“When it comes to manufacturing and testing modern IC devices, driving down the cost-of-ownership is the name of the game,” said Mike Flaherty, general manager, Keithley product line at Tektronix. “With this latest release, we’ve taken the parametric test system with the best COO and reduced measurement time even further for improved in-line wafer test throughput. This will help our customers improve the bottom line and stay competitive in a fast-moving industry.”

The software upgrade for the S530 includes enhancements to system SMUs that reduce settling time associated with low current measurements. Faster current measurements result in faster overall system measurement speeds. New system measurement settings and streamlined software execution further improve system speed. The upgrade also includes integration of Tektronix’s newest Keithley digital multimeter (DMM) for faster low voltage and low resistance measurements.

In support of Governor Andrew Cuomo’s commitment to furthering New York State’s international leadership in the global nanotechnology driven economy of the 21st century, SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE) and Inficon, Inc. (INFICON) today announced plans for a joint research and development alliance on advanced semiconductor manufacturing technology. The 2-year R&D agreement will leverage SUNY Poly CNSE’s globally recognized state-of-the-art capabilities and INFICON’s in-situ monitoring technologies that are enabling the “smart factories” of the future with real time nanoscale process control. The joint alliance will also formally launch a new Advanced Manufacturing Performance (AMP) Center dedicated to the component, sub-system and site-service companies that support the advanced manufacturing processes in a broad array of industries. The AMP Center is expected to lead to the creation of 50 jobs and will leverage the operations at the NanoTech Albany Complex while expanding to the Computer Chip Commercialization Center (QUAD-C) in Marcy with dedicated R&D capabilities, which will also support new advanced manufacturing operations recently announced by Governor Cuomo.

“Governor Cuomo’s high-tech economic blueprint for New York State is rooted in world class research and development opportunities and our partnership with INFICON will enable increased efficiency and effectiveness as we determine new manufacturing standards necessary to meet the future needs of the industry,” said Michael Fancher, Executive Director of the New York State Center for Advanced Technology in Nanoelectronics and Nanomaterials (CATN2)  “INFICON and CNSE have enjoyed a long relationship and this agreement marks a new level of collaboration with one of the world’s leading innovation companies located just 30 minutes away from SUNY Poly’s Marcy campus that is expanding its operations in the New York NanoTech corridor today. We look forward to our collaboration with INFICON and enabling the continued growth of New York’s burgeoning nanoelectronics industry.”

“The demands on the nanoelectronics industry are increasing rapidly and it is vital that we continue to build our sensing and analysis capabilities. SUNY Poly CNSE is a critical enabling resource in catalyzing new research and development, not just due to its world-class facilities and personnel, but also its ability to foster partnerships between state government, the private sector and New York State’s top-flight universities and research institutions,” said Peter Maier, President of INFICON, Inc.  “With our recent expansion in Syracuse, INFICON has grown its local workforce to 260 and is excited to launch this partnership to advance the development of next generation sensor technologies.”

INFICON is a provider of instrumentation, critical sensor technologies, and advanced process control software that enhance productivity and quality in sophisticated industrial vacuum processes. The establishment of the semiconductor research and development partnership with SUNY Poly CNSE will characterize precursor and/or byproduct compounds containing phosphorus, arsenic, antimony, gallium, and/or indium that may evolve from the surface of wafers during and/or following various processes throughout the semiconductor manufacturing sequence; identify and develop methods for detecting and analyzing such compounds; and improve and develop sensor technologies and equipment that embody or incorporate such methods.

The Semiconductor Industry Association (SIA), in consultation with Semiconductor Research Corporation (SRC), today presented its University Research Award to professors from the University of Texas at Austin (UT Austin) and Carnegie Mellon University (CMU) in recognition of their outstanding contributions to semiconductor research.

Dr. Grant Willson, professor of chemistry and chemical engineering and the Rashid Engineering Regents Chair at UT Austin, received the honor for excellence in technology research, while Dr. Larry Pileggi, Tanoto Professor of Electrical and Computer Engineering at CMU, was recognized for excellence in design research.

“Research is the lifeblood of innovation and the U.S. semiconductor industry,” said John Neuffer, president and CEO of the Semiconductor Industry Association, which represents U.S. leadership in semiconductor manufacturing, design and research. “Dr. Willson and Dr. Pileggi have spearheaded pioneering research that has moved our industry forward and helped keep America at the leading edge of innovation. It is with great pleasure that we recognize Dr. Willson and Dr. Pileggi for their tremendous and important accomplishments.”

“SRC’s mission is to drive focused industry research to both advance state-of-the-art technology and continue to create a pipeline of qualified professionals who will serve as next-generation leaders for the industry,” said Ken Hansen, SRC CEO and President. “Dr. Willson and Dr. Pileggi exemplify that spirit of innovation, and we’re pleased to honor them for their achievements.”

Dr. Willson joined the faculties of the Departments of Chemical Engineering and Chemistry at UT Austin in 1993. He received his BS and Ph.D. in Organic Chemistry from the University of California at Berkeley and an MS degree in Organic Chemistry from San Diego State University. He came to UT Austin from his position as an IBM Fellow and Manager of the Polymer Science and Technology area at the IBM Almaden Research Center in San Jose, Calif. He joined IBM after serving on the faculties of California State University, Long Beach and the University of California, San Diego.

Dr. Pileggi joined the faculty at CMU in 1996. His professional background includes more than 30 years of experience in IC design, Electronic Design Automation and university education and research. Dr. Pileggi co-founded Extreme DA Corporation in 2003 and served as its advisor. He also co-founded and served as Chief Technology Officer of Fabbrix, Inc in 2007. He received his Ph.D. in Electrical and Computer Engineering from CMU in 1989 and was also a faculty member at UT Austin before returning to CMU.

The University Research Award was established in 1995 to recognize lifetime research contributions to the U.S. semiconductor industry by university faculty.

Global semiconductor capital equipment manufacturer OEM Group announced today that it has launched its new Cintillio-S (TM) automated batch wet chemical processing system. This automated batch system integrates industrial automation with the Cintillio platform, which continues to be the leading system for both Acid and Solvent processing since its introduction in 2009. This next evolution provides automated wafer handling technology and replaces the SEMITOOL Spectrum and Magnum platforms which were acquired last year from Applied Materials.

“The Cintillio-S incorporates all of the excellent features of Cintillio and adds the advantages of industrial automation,” said Graham Pye, CPT Product Manager at OEM Group. “Using Cintillio as the base processing module and incorporating industrial automation on the front-end allows us to move away from the custom-design philosophy used in the Spectrum and Magnum platforms. The use of common electro-mechanical components for both the process and automation modules ensures supply chain continuity for end-users. In addition, the use of Cintillio process module ensures existing Spectrum and Magnum users have a seamless process transfer from these older platforms.”

With global demand for semiconductor devices increasing and the constant pressure to deliver those products at minimal cost, today’s manufacturers increasingly seek to maximize tool utilization. These firms—particularly those utilizing wafers at 200mm and above, or seeking to invest in technology to produce at this level—universally view automation as an essential element for increasing efficiency and process throughput as a means of meeting this objective.

“The main drivers for automation at 200mm and above is to reduce manual operator intervention and dependency”, states Paul Inman, CPT Business Development at OEM Group. “This provides ergonomic relief to operators, fulfills the automation requirements of SMIF and FOUP operations, and has the added advantage of automated wafer control. The Cintillio-S handling solution is well-suited for those manufacturers who require an automated wet processing mini-environment in a compact footprint, including power semiconductor, CMOS IC, Advanced Packaging, MEMS, and LED applications.”

Through higher productivity, automation, and advanced process control, the Cintillio-S platform provides effective Acid, Solvent, and Ozone process solutions for FEOL and BEOL manufacturing, as well as wafer-scale packaging, with low cost-of-ownership. By leveraging the advantages of the Cintillio G2 system—including flexible chemical layout, modern controller design and diagnostics, and efficient exhaust design and facility requirements—the Cintillio-S gives manufacturers the tool it needs to meet its production demands today and in the future.

 

Individual transistors made from carbon nanotubes are faster and more energy efficient than those made from other materials. Going from a single transistor to an integrated circuit full of transistors, however, is a giant leap.

“A single microprocessor has a billion transistors in it,” said Northwestern Engineering’s Mark Hersam. “All billion of them work. And not only do they work, but they work reliably for years or even decades.”

When trying to make the leap from an individual, nanotube-based transistor to wafer-scale integrated circuits, many research teams, including Hersam’s, have met challenges. For one, the process is incredibly expensive, often requiring billion-dollar cleanrooms to keep the delicate nano-sized components safe from the potentially damaging effects of air, water, and dust. Researchers have also struggled to create a carbon nanotube-based integrated circuit in which the transistors are spatially uniform across the material, which is needed for the overall system to work.

Now Hersam and his team at Northwestern University have found a key to solving all these issues. The secret lies in newly developed encapsulation layers that protect carbon nanotubes from environmental degradation.

Supported by the Office of Naval Research and the National Science Foundation, the research appears online in Nature Nanotechology on September 7. Tobin J. Marks, the Vladimir N. Ipatieff Research Professor of Chemistry in Northwestern’s Weinberg College of Arts and Sciences and professor of materials science and engineering in the McCormick School of Engineering, coauthored the paper. Michael Geier, a graduate student in Hersam’s lab, was first author.

“One of the realities of a nanomaterial, such as a carbon nanotube, is that essentially all of its atoms on the surface,” said Hersam, the Walter P. Murphy Professor of Materials Science and Engineering. “So anything that touches the surface of these materials can influence their properties. If we made a series of transistors and left them out in the air, water and oxygen would stick to the surface of the nanotubes, degrading them over time. We thought that adding a protective encapsulation layer could arrest this degradation process to achieve substantially longer lifetimes.”

Hersam compares his solution to one currently used for organic light-emitting diodes (LEDs), which experienced similar problems after they were first realized. Many people assumed that organic LEDs would have no future because they degraded in air. After researchers developed an encapsulation layer for the material, organic LEDs are now used in many commercial applications, including displays for smartphones, car radios, televisions, and digital cameras. Made from polymers and inorganic oxides, Hersam’s encapsulation layer is based on the same idea but tailored for carbon nanotubes.

To demonstrate proof of concept, Hersam developed nanotube-based static random-access memory (SRAM) circuits. SRAM is a key component of all microprocessors, often making up as much as 85 percent of the transistors in the central-processing unit in a common computer. To create the encapsulated carbon nanotubes, the team first deposited the carbon nanotubes from a solution previously developed in Hersam’s lab. Then they coated the tubes with their encapsulation layers.

Using the encapsulated carbon nanotubes, Hersam’s team successfully designed and fabricated arrays of working SRAM circuits. Not only did the encapsulation layers protect the sensitive device from the environment, but they improved spatial uniformity among individual transistors across the wafer. While Hersam’s integrated circuits demonstrated a long lifetime, transistors that were deposited from the same solution but not coated degraded within hours.

“After we’ve made the devices, we can leave them out in air with no further precautions,” Hersam said. “We don’t need to put them in a vacuum chamber or controlled environment. Other researchers have made similar devices but immediately had to put them in a vacuum chamber or inert environment to keep them stable. That’s obviously not going to work in a real-world situation.”

Hersam imagines that his solution-processed, air-stable SRAM could be used in emerging technologies. Flexible carbon nanotube-based transistors could replace rigid silicon to enable wearable electronics. The cheaper manufacturing method also opens doors for smart cards — credit cards embedded with personal information to reduce the likelihood of fraud.

“Smart cards are only realistic if they can be realized using extremely low-cost manufacturing,” he said. “Because our solution-processed carbon nanotubes are compatible with scalable and inexpensive printing methods, our results could enable smart cards and related printed electronics applications.”

M/A-COM Technology Solutions Inc., a supplier of high-performance analog, RF, microwave, millimeterwave and photonic semiconductor products, announced that it has shipped more than one million GaN-on-Silicon (GaN on Si) RF power devices to date to customers for use in communications, military and other RF applications. This milestone in the market adoption of this high performance technology comes as GaN on Si is finding new potential markets in applications such as magnetron replacements, automotive ignition systems, high bay lighting and wireless charging.

MACOM’s GaN on Si is a unique and proprietary RF semiconductor process that brings together the best features of Gallium Arsenide, GaN-on-Silicon Carbide, and LDMOS in a low cost and scalable manufacturing flow. This milestone demonstrates clear field-proven reliability and ruggedness in demanding applications such as Aerospace and Defense and civil and commercial communications.

“MACOM’s GaN IP portfolio and strategic licensing agreements have set the foundation for a sustainable, cost-efficient technology we believe can enable GaN production at unprecedented economies of scale,” said Michael Ziehl, VP of Marketing, RF & Microwave, MACOM. “Building on this milestone, we expect to see ramping commercial adoption of our GaN technology in other RF applications in the future, including 4G/LTE base stations and RF Energy applications.”

M/A-COM Technology Solutions Holdings, Inc. is a supplier of high-performance analog, RF, microwave, millimeterwave and photonic semiconductor products that enable next-generation Internet and modern battlefield applications. Headquartered in Lowell, Massachusetts, MACOM certified to the ISO9001 international quality standard and ISO14001 environmental management standard. MACOM has design centers and sales offices throughout North America, Europe, Asia and Australia.

With the help of a semiconductor quantum dot, physicists at the University of Basel have developed a new type of light source that emits single photons. For the first time, the researchers have managed to create a stream of identical photons. They have reported their findings in the scientific journal Nature Communications together with colleagues from the University of Bochum.

A single-photon source never emits two or more photons at the same time. Single photons are important in the field of quantum information technology where, for example, they are used in quantum computers. Alongside the brightness and robustness of the light source, the indistinguishability of the photons is especially crucial. In particular, this means that all photons must be the same color. Creating such a source of identical single photons has proven very difficult in the past.

However, quantum dots made of semiconductor materials are offering new hope. A quantum dot is a collection of a few hundred thousand atoms that can form itself into a semiconductor under certain conditions. Single electrons can be captured in these quantum dots and locked into a very small area. An individual photon is emitted when an engineered quantum state collapses.

Noise in the semiconductor

A team of scientists led by Dr. Andreas Kuhlmann and Prof. Richard J. Warburton from the University of Basel have already shown in past publications that the indistinguishability of the photons is reduced by the fluctuating nuclear spin of the quantum dot atoms. For the first time ever, the scientists have managed to control the nuclear spin to such an extent that even photons sent out at very large intervals are the same color.

Quantum cryptography and quantum communication are two potential areas of application for single-photon sources. These technologies could make it possible to perform calculations that are far beyond the capabilities of today’s computers.