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IC Insights’ November Update to the 2018 McClean Report, released later this month, includes a discussion of the forecasted top-25 semiconductor suppliers in 2018 (the top-15 2018 semiconductor suppliers are covered in this research bulletin).  The Update also includes a detailed five-year forecast of the IC market by product type (including dollar volume, unit shipments, and average selling price).

The expected top-15 worldwide semiconductor (IC and O-S-D—optoelectronic, sensor, and discrete) sales ranking for 2018 is shown in Figure 1.  It includes seven suppliers headquartered in the U.S., three in Europe, two each in South Korea and Japan, and one in Taiwan.  After announcing in early April 2018 that it had successfully moved its headquarters location from Singapore to the U.S., IC Insights now classifies Broadcom as a U.S. company.

In 2Q18, Toshiba completed the $18.0 billion sale of its memory IC business to the Bain Capital-led consortium. Toshiba then repurchased a 40.2% share of the business.  The Bain consortium goes by the name of BCPE Pangea and the group owns 49.9% of Toshiba Memory Corporation (TMC).  Hoya Corp. owns the remaining 9.9% of TMC’s shares.  The new owners have plans for an IPO within three years. Bain has said it plans to support the business in pursing M&A targets, including potentially large deals.

As a result of the sale of Toshiba’s memory business, the 2018 sales results shown in Figure 1 include the combined sales of the remaining semiconductor products at Toshiba (e.g., Discrete devices and System LSIs) and NAND flash sales from Toshiba Memory Corporation.

In total, the top-15 semiconductor companies’ sales are forecast to jump by 18% in 2018 compared to 2017, two points higher than the expected total worldwide semiconductor industry 2018/2017 increase of 16%.  The three largest memory suppliers—Samsung, SK Hynix, and Micron—are each forecast to register greater than 25% year-over-year growth in 2018 with SK Hynix expected to log the highest growth among the top 15 companies with a 41% surge in sales this year.  All of the top-15 companies are expected to have sales of at least $8.0 billion in this year, two companies more than in 2017.  Nine of the top-15 companies are forecast to register double-digit year-over-year growth in 2018.  Moreover, five companies are expected to have ≥20% growth, including four of the big memory suppliers (Samsung, SK Hynix, Micron, and Western Digital/SanDisk) as well as Nvidia.

Figure 1

The largest move upward in the ranking is forecast to come from Western Digital/San Disk, which is expected to move up three spots to the 12th position.  In contrast, NXP is expected to fall two places to 13th with a sales increase of only 1% this year.  However, the worst-performing company in the ranking is forecast to be Qualcomm with a semiconductor revenue decline of 3% this year, the only top-15 company expected to register a drop in sales.

Intel was the number one ranked semiconductor supplier in 1Q17 but lost its lead spot to Samsung in 2Q17. It also fell from the top spot in the full-year 2017 ranking, a position it had held since 1993.  With the strong surge in the DRAM and NAND flash markets over the past year, Samsung is forecast to go from having 7% more total semiconductor sales than Intel in 2017 to having 19% more semiconductor sales than Intel in 2018.

Memory devices are forecast to represent 84% of Samsung’s semiconductor sales in 2018, up three points from 81% in 2017 and up 10 points from 71% just two years earlier in 2016.  Moreover, the company’s non-memory sales in 2018 are expected to be only $13.3 billion, up only 6% from 2017’s non-memory sales level of $12.5 billion. In contrast, Samsung’s memory sales are forecast to be up 31% this year and reach $70.0 billion.

The top-15 ranking includes one pure-play foundry (TSMC) and three fabless companies.  If TSMC were excluded from the top-15 ranking, Taiwan-based MediaTek would have been ranked in the 15th position with forecasted 2018 sales of $7.9 billion, up only 1% from 2017.

IC Insights includes foundries in the top-15 semiconductor supplier ranking since it has always viewed the ranking as a top supplier list, not a marketshare ranking, and realizes that in some cases the semiconductor sales are double counted.  With many of our clients being vendors to the semiconductor industry (supplying equipment, chemicals, gases, etc.), excluding large IC manufacturers like the foundries would leave significant “holes” in the list of top semiconductor suppliers.  Foundries and fabless companies are identified in the Figure.  In the April Update to The McClean Report, marketshare rankings of IC suppliers by product type were presented and foundries were excluded from these listings.

Overall, the top-15 list is provided as a guideline to identify which companies are the leading semiconductor suppliers, whether they are IDMs, fabless companies, or foundries.

SEMI, the global industry association serving the electronics manufacturing supply chain, today voiced support and encouragement for trade discussions between U.S. President Donald Trump and People’s Republic of China President Xi Jinping – talks that are planned for Dec. 1 during the G20 Summit in Argentina. Representing the semiconductor industry end-to-end, from chip design through manufacturing, SEMI expressed hope for a deal and offered principles beneficial to the global microelectronics manufacturing supply chain.

“With SEMI members being key enablers of the more than $2 trillion electronics manufacturing supply chain, SEMI has a clear foundational mission based on free and fair trade, open markets, and support for international laws governing IP, cybersecurity and national security,” said Ajit Manocha, SEMI president and CEO. “Adhering to these principles benefits all SEMI member companies and the global ecosystem of industries and applications enabled by semiconductor manufacturing. I commend our global government leaders for returning to the negotiating table.”

Recent tariffs and trade tensions, on top of newly imposed and rumored export controls, have complicated the global electronics manufacturing supply chain, forcing many SEMI member companies to rethink their investment strategies. Over the past six months, SEMI has testified that tariffs threaten to undercut the ability of many SEMI members to sell overseas by increasing costs, stifling innovation, and curbing U.S. technological leadership.

SEMI continues to educate U.S. lawmakers, as well as governments worldwide, about the critical importance of free and fair trade, open markets, and respect and enforcement of IP for all players in the global electronics manufacturing supply chain. As part of this initiative, SEMI is providing the 10 Principles for the Global Semiconductor Supply Chain in Modern Trade Agreements below to government officials and encouraging them to include these guidelines in forward-looking agreements.

These core principles outline the primary considerations for balanced trade rules that benefit SEMI members around the world, strengthen innovation and perpetuate the societal benefits of affordable microelectronics – essential components in all advanced communications, computing, transportation, healthcare and consumer electronics.

10 Principles for the Global Semiconductor Supply Chain in Modern Trade Agreements

1. Affirm principles of non-discrimination.

Non-discriminatory treatment is a central tenet of the global trading system. SEMI strongly believes that any trade deal should provide that all products from a party to the deal cannot be put at a competitive disadvantage in any other party’s market. Related, any agreement must be fully compliant with the World Trade Organization’s rules.

2. Maintain strong respect for intellectual property and trade secrets through robust safeguards and significant penalties for violators.

Protection for intellectual property are essential for the semiconductor industry. These standards enable the ability to innovate and grow. SEMI supports robust copyright standards, strong patent protections, and regulations that safeguard industrial design. SEMI also strongly supports rules that preserve trade secrets protection, including establishing criminal procedures and penalties for theft, including by means of cyber theft.

3. Remove tariffs and end technical barriers on semiconductor products.

Parties should eliminate tariffs and technical barriers on semiconductors and all technology products, that rely on electronic chips. Removing tariffs and technical barriers is crucial for businesses, especially for small and medium-sized enterprises, in penetrating new markets. Related, any trade deal should open markets for services providers, ensuring that all face fair and transparent treatment.

4. Simplify and harmonize the customs and trade facilitation processes.

The trade deals should include strong commitments on customs procedures and trade facilitation to ensure that border processing will be quick, transparent, and predictable. The parties should also work to use electronic customs forms to expedite customs processing.

5. Combat any attempts of forced technology transfer.

All trade deals should have clear and firm rules that prohibit countries from requiring companies to transfer their technology, intellectual property, or other proprietary information to persons in their respective territories.

6. Enable the free flow of cross-border data.

In today’s global economy, all industries, including the semiconductor industry, rely on the free flow of data. Countries should refrain from putting in place unjustifiable regulations that limit the free flow of information, which simply serve to curb innovation and impact growth. SEMI supports provisions that enable the movement of data, subject to reasonable safeguards for privacy and other protections.

7. Eliminate forced data localization measures.

Many countries have created laws that require physical infrastructure and data centers in every country they seek to serve, which adds unnecessary costs and burdens. Forward-looking policies should eliminate the use of forced data localization measures.

8. Harmonize global standards to achieve “one standard, one test, accepted everywhere.”

Businesses should not have to face different standards for each market they serve. Global standards, driven by industry, should be market-oriented, and there should be strong commitments on transparency, stakeholder participation and coordination.

9. Create transparent rules for state-owned and -supported enterprises to ensure fair and non-discriminatory treatment.

SEMI supports a trade deal that contains robust commitments to ensure that state-owned and -supported enterprises compete based on performance, quality and price, as opposed to discriminatory regulation, opaque subsidies, favoritism, or other tools that artificially benefit state-backed businesses.

10. Establish protections for companies and individuals that respect privacy while also balancing security.

Any trade deal should have firm consumer protections, including privacy, that enables ease of use, but also does not forgo security. SEMI support efforts to use encryption products in support of this venture and also believes that parties should work to advance efforts on cybersecurity through self-assessment, declaration of conformity, increased cooperation and information sharing, all of which will help prevent cyber-attacks and stop the diffusion of malware.

Micron Technology, Inc., (Nasdaq: MU) today announced that it has begun mass production of the industry’s highest-capacity and first monolithic 12Gb low-power double data rate 4x (LPDDR4x) DRAM for mobile devices and applications. This latest generation of Micron’s LPDDR4 memory brings key improvements in power consumption while maintaining the industry’s fastest LPDDR4 clock speeds, thereby delivering advanced performance for next-generation mobile handsets and tablets. In addition, Micron’s 12Gb LPDDR4x doubles memory capacity to offer the industry’s highest-capacity monolithic LPDDR4 without increasing the footprint compared to the previous generation product.

The exponential increase in usage of compute and data-intensive mobile applications such as artificial intelligence (AI), augmented reality (AR) and 4K video has been accompanied with demands by mobile users to maximize battery life and performance and increase capacity. Next-generation mobile devices that integrate multiple high-resolution cameras and increasingly use AI for image optimization also require higher DRAM capacities to support these features.

As the industry transitions towards deployment of 5G mobile technology, the memory subsystem in mobile handsets will have to support these dramatically higher data rates and the associated processing of data in real-time. New applications built upon 5G technology will also be able to leverage the increased capabilities of the memory subsystem to enable new and immersive user experiences.

As the industry’s highest-capacity monolithic mobile memory, Micron’s LPDDR4x DRAM delivers industry-leading bandwidth and power efficiency, along with the benefit of enabling higher DRAM capacities in the handset.

“Micron is a recognized pioneer in bringing low-power DRAM technology to the world and we once again have delivered another milestone with the launch of the industry’s first, highest-capacity monolithic 12Gb mobile DRAM,” Senior Vice President and General Manager of Micron’s Mobile Business Unit Raj Talluri said. “This latest generation of LPDDR4 enables mobile handset manufacturers to deliver a rich user experience for ultra-slim mobile devices as user demands for performance, capacity and longer battery life continue to rise as a result of data-intensive applications.”

The LPDDR4x DRAM will be produced based on 1Y-nm (10-nanometer-class) process technology, resulting in improved efficiency and reduction in battery power consumption. Micron’s LPDDR4x mobile DRAM is capable of reducing power by up to 10 percent at similar data rates of 4,266 megabits per second (Mb/s) compared to previous generations.

Micron 12Gb LPDDR4 memory solutions are available today. For more information, visit www.micron.com.

Worldwide silicon wafer area shipments increased during the third quarter 2018, surpassing record second quarter 2018 area shipments to set another all-time high, according to the SEMI Silicon Manufacturers Group (SMG) in its quarterly analysis of the silicon wafer industry.

Total silicon wafer area shipments reached 3,255 million square inches during the most recent quarter, a 3.0 percent rise from the 3,164 million square inches shipped during the previous quarter. New quarterly total area shipments clocked in 8.6 percent higher than third quarter 2017 shipments.

“Silicon shipment volumes remained at record levels during the third quarter,” said Neil Weaver, chairman SEMI SMG and Director, Product Development and Applications Engineering of Shin Etsu Handotai America. “Silicon shipments are mirroring this year’s strong semiconductor unit growth in support of a growing and diversified electronics market during our stable economy.”

Silicon Area Shipment Trends – Semiconductor Applications Only

Millions of Square Inches
1Q2017
2Q2017
3Q2017
4Q2017
1Q2018
2Q2018
3Q2018
Total
2,858
2,978
2,997
2,977
3,084
3,164
3,255

Source: SEMI, (www.semi.org), November 2018

Silicon wafers are the fundamental building material for semiconductors, which in turn, are vital components of virtually all electronics goods, including computers, telecommunications products, and consumer electronics. The highly engineered thin round disks are produced in various diameters (from one inch to 12 inches) and serve as the substrate material on which most semiconductor devices, or chips, are fabricated.

All data cited in this release is inclusive of polished silicon wafers, including virgin test wafers and epitaxial silicon wafers, as well as non-polished silicon wafers shipped by the wafer manufacturers to the end-users.

The Silicon Manufacturing Group (SMG)  is a sub-committee of the SEMI Electronic Materials Group (EMG) and is open to SEMI members involved in manufacturing polycrystalline silicon, monocrystalline silicon or silicon wafers (e.g., as cut, polished, epi, etc.). The purpose of the group is to facilitate collective efforts on issues related to the silicon industry including the development of market information and statistics about the silicon industry and the semiconductor market.

Micron Technology, Inc., (NASDAQ:MU) today received the announcement from the U.S. Department of Justice that on Nov. 1, 2018, it had issued indictments against United Microelectronics Corporation (UMC), Fujian Jinhua Integrated Circuit (Jinhua) and three former employees of Micron’s Taiwan unit for conspiracy to commit trade secret theft, economic espionage and related crimes.

“We appreciate the U.S. Department of Justice’s decision to prosecute the criminal theft of our intellectual property,” said Joel Poppen, senior vice president, legal affairs, general counsel and corporate secretary at Micron Technology. “Micron has invested billions of dollars over decades to develop its intellectual property. The actions announced today reinforce that criminal misappropriation will be appropriately addressed.”

The three former Micron employees named in the indictment are former Micron Memory Taiwan chairman Stephen Chen and engineers JT Ho and Kenny Wang.

In December 2017, Micron filed suit against UMC and Jinhua in the U.S. District Court for the Northern District of California for the misappropriation of Micron intellectual property and trade secrets.

Background about prior cases

  • In August 2017, Taiwan authorities filed criminal indictments against UMC and three of its employees for the alleged theft and use of trade secrets from Micron, for the purpose of developing DRAM chip manufacturing technologies in cooperation with Jinhua. Two of those charged are former employees of Micron’s Taiwan unit who have now also been indicted for trade secret theft by the U.S. Department of Justice.
  • In December 2017, Micron filed a civil case against UMC and Jinhua in the U.S. District Court for the Northern District of California for the misappropriation of Micron trade secrets.
  • In January 2018, in retaliation for the criminal indictments filed by Taiwan authorities and the civil lawsuit filed by Micron in Federal Court in California, UMC and Jinhua filed patent infringement suits in Fujian Province, China, against Micron’s China subsidiaries. On July 5, 2018, the court in Fujian notified the Micron subsidiaries that it had issued preliminary injunctions against them. Micron has asked the court to reconsider the injunctions, which the court issued without allowing Micron to present a defense. Micron strongly believes that the patents are invalid, that Micron’s products do not infringe the patents and that these suits are without merit.

IC Insights’ November Update to The 2018 McClean Report will present an in-depth analysis and detailed five-year forecast for the IC Industry, which is expected to enter a period of cyclical “cooling” after an extended period of very strong growth.

Figure 1 illustrates the worldwide quarterly year-over-year IC market increases from 1Q through 3Q and IC Insights’ forecast for 4Q of this year.  As shown, the first half of 2018 started out with strong quarterly year-over-year growth for the IC market.  However, year-over-year IC market growth dropped to 14% in 3Q.  Moreover, with the softening of the memory market, IC Insights projects that year-over-year IC market growth in 4Q will be only 6%.

Figure 1

Third quarter sequential growth confirms the slowing year-over-year trend. In 2017, 3Q/2Q IC market growth was 11%.  This year, 3Q/2Q growth slowed to a 6% increase (the same rate as the long term average).  As mentioned, the softening memory market has started to become a “headwind” on total IC market growth.  It is interesting that in 2017, the 3Q/2Q memory market growth rate was a very strong 18%.  In contrast, the 3Q/2Q memory market increase in 2018 was 8%, less than half of last year’s rate.

GLOBALFOUNDRIES today announced the establishment of Avera Semiconductor LLC, a wholly owned subsidiary dedicated to providing custom silicon solutions for a broad range of applications. Avera Semi will leverage deep ties with GF to deliver ASIC offerings on 14/12nm and more mature technologies while providing clients new capabilities and access to alternate foundry processes at 7nm and beyond.

Avera Semi is built upon an unrivaled legacy of ASIC expertise, tapping into a world-class team that has executed more than 2,000 complex designs in its 25-year history. With more than 850 employees, annual revenues in excess of $500 million, and over $3 billion in 14nm designs in execution, Avera Semi is well positioned to serve clients developing products across a wide range of markets, including wired and wireless networking, data centers and storage, artificial intelligence and machine learning, and aerospace and defense.

The new company is led by Kevin O’Buckley, a leader in the ASIC business since joining GF as part of the acquisition of IBM Microelectronics in 2015. Previously, he spent nearly 20 years at IBM in a variety of roles spanning both technical and executive leadership positions.

“I couldn’t imagine a better time to launch a new venture focused on delivering custom ASIC solutions,” O’Buckley said. “Data traffic and bandwidth demands have exploded, and next-generation systems for cloud and communications must deliver more performance and handle more complexity than ever before. Avera Semi has the right combination of expertise and technology to help our clients design and build high-performance, highly optimized semiconductor solutions.”

“Arm has a long history of collaborating with the team building Avera Semi to enhance PPA and bring innovative solutions to market,” said Drew Henry, senior vice president and general manager, Infrastructure Line of Business, Arm. “As the needs for compute requirements continue to evolve and diversify, we look forward to joining Avera’s capabilities and technologies with Arm Neoverse solutions and physical design IP to deliver unique value to a broad customer base.”

“Synopsys’ long history of collaboration with GF has enabled us to deliver a broad portfolio of high-quality DesignWare IP on a range of GF processes,” said John Koeter, vice president of marketing for IP at Synopsys. “We look forward to continuing this success with Avera Semi to provide designers with the necessary IP for their next-generation, high-performance SoC designs on advanced FinFET processes.”

Avera Semi offers clients a range of capabilities to enable end-to-end silicon solutions:

●      ASIC offerings on both leading-edge and proven process technologies, including a newly established foundry partnership on 7nm
●      A rich IP portfolio, including high-speed SerDes, high-performance embedded TCAMs, ARM® cores and performance and density-optimized embedded SRAMs
●      A comprehensive, production-proven design methodology that builds on a strong record of first-time-right results to help reduce development costs and time-to-market
●      Advanced packaging options to increase bandwidth, eliminate I/O bottlenecks, and reduce memory area, latency and power
●      Flexible ASIC business engagement models that give clients the ability to supplement in-house resources with the level of support needed from experienced chip design, methodology, test and packaging teams

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced worldwide sales of semiconductors reached $122.7 billion during the third quarter of 2018, an increase of 4.1 percent over the previous quarter and 13.8 percent more than the third quarter of 2017. Global sales for the month of September 2018 reached $40.9 billion, an uptick of 2.0 percent over last month’s total and 13.8 percent more than sales from June 2017. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

“Three-quarters of the way through 2018, the global semiconductor industry is on pace to post its highest-ever annual sales, comfortably topping last year’s record total of $412 billion,” said John Neuffer, president and CEO, Semiconductor Industry Association. “While year-to-year growth has tapered in recent months, September marked the global industry’s highest-ever monthly sales, and Q3 was its top-grossing quarter on record. Year-to-year sales in September were up across every major product category and regional market, with sales into China and the Americas continuing to lead the way.”

Regionally, sales increased compared to September 2017 in China (26.3 percent), the Americas (15.1 percent), Europe (8.8 percent), Japan (7.2 percent), and Asia Pacific/All Other (2.4 percent). Sales were up compared to last month in the Americas (6.0 percent), China (1.8 percent), and Europe (1.2 percent), but down slightly in Asia Pacific/All Other (-0.1 percent) and Japan (-0.6 percent).

For comprehensive monthly semiconductor sales data and detailed WSTS Forecasts, consider purchasing the WSTS Subscription Package. For detailed data on the global and U.S. semiconductor industry and market, consider purchasing the 2018 SIA Databook.

September 2018
Billions
Month-to-Month Sales
Market Last Month Current Month % Change
Americas 8.68 9.20 6.0%
Europe 3.53 3.57 1.2%
Japan 3.39 3.37 -0.6%
China 14.10 14.35 1.8%
Asia Pacific/All Other 10.43 10.42 -0.1%
Total 40.12 40.91 2.0%
Year-to-Year Sales
Market Last Year Current Month % Change
Americas 7.99 9.20 15.1%
Europe 3.28 3.57 8.8%
Japan 3.14 3.37 7.2%
China 11.36 14.35 26.3%
Asia Pacific/All Other 10.18 10.42 2.4%
Total 35.95 40.91 13.8%
Three-Month-Moving Average Sales
Market Apr/May/Jun Jul/Aug/Sept % Change
Americas 8.34 9.20 10.2%
Europe 3.67 3.57 -2.7%
Japan 3.39 3.37 -0.8%
China 13.59 14.35 5.6%
Asia Pacific/All Other 10.32 10.42 1.0%
Total 39.31 40.91 4.1%

With tight supplies of widely used power transistors and diodes driving up prices and new optical-imaging applications moving into more systems, the diverse marketplace for optoelectronics, sensors and actuators, and discrete semiconductors (O-S-D) is on pace to grow by 11% for the second year in a row in 2018 and set a ninth consecutive record-high level in combine annual revenues worldwide.  An update to IC Insights’ O-S-D forecast shows total sales across the three market segments reaching $83.2 billion this year, followed by 9% growth in 2019, when revenues are expected to hit an all-time high of $90.6 billion (Figure 1).

Figure 1

In 2017, O-S-D revenues grew 11% with total unit shipments also rising 11%, but in 2018, combined sales of optoelectronics, sensors/actuators, and discretes are expected to increase by about 11% with overall unit volumes rising 9% and average selling prices (ASPs) for products in the three market segments being nearly 1.5% higher this year.  Shortages of power transistors, diodes, and other widely used commodity parts in 2018 are expected to drive up total discrete ASPs by nearly 8% this year and result in a strong 12% increase in sales to a record-high $27.6 billion from the current peak of $24.6 billion set in 2017.

Optoelectronics sales are forecast to rise nearly 11% in 2018 to reach an all-time high of $40.9 billion, with unit shipments climbing 18% this year, but the ASP in this market is expected to decline by about 6% because of falling prices for some image sensors, infrared products, lasers, optocouplers, and lamp devices, which are mostly light-emitting diodes (LEDs).  Optoelectronics sales are getting a tremendous boost from sharply higher demand for light sensors, which are used in automatic controls of displays in smartphones and other systems, heart rate monitoring, proximity detection, and color sensing.  Light sensors along with infrared and laser transmitters are also seeing strong growth in new three-dimensional depth scanning systems and time-of-flight (ToF) cameras, which use reflected light to sense distances and are appearing in more smartphones and other applications for face recognition, 3D imaging, and virtual/augmented reality applications.

Following strong growth of 16% in both 2016 and 2017, total revenues for non-optical sensors and actuators are expected to rise 7% in 2018 to a record-high $14.8 billion with unit volume being up just 5%—the lowest rate of increase in 10 years—because of inventory adjustments in several product categories, low smartphone growth, and some production constraints.  Strong automotive sensor demand has propped up total sensors/actuator sales growth and helped lift ASPs by 2%—the first rise since 2010.

By Wilfried Vogel, NETA

Downsizing and thinning all the electronic parts has always been a trend in our modern era. However, the nanoscience and nanotechnologies were still science fiction in the 60’s and the word nanotechnology was used for the first time in 1974. At the same time, the first atomic force microscopes (AFM) and scanning acoustic microscopes (SAM) were developed. Today nanotechnologies represent huge investments –  even from governments – and a global market of several thousand of billions of euros.

Non-destructive testing at the nanometric scale is the purpose here. Ultrasounds are widely used in the aeronautics industry or during medical echography. The spatial resolution reached in that case is around the millimeter which is a million time too large when we speak of nanotechnologies.

SAM systems benefit from a higher definition thanks to MHz/GHz ultrasounds, the smallest axial resolution found on the market is below the micron.

The nanometric world requires another 2 to 3 orders of magnitude below and it can only be reached thanks to THz ultrasounds. These frequencies cannot be generated with standard transductors, that’s why the ASynchronous OPtical Sampling (ASOPS) systems are equipped with ultrafast lasers.

This complex technology is now available on the market in a compact instrument. The JAX is the first industrial imaging ASOPS system (Fig. 1).

When the laser hits the surface, the most part of the energy is absorbed by the first layers of atoms and converted into heat without damaging the sample (Fig. 2), leading to transient thermoelastic expansion and ultrasound emission.

The choice of the probe is also important to keep the temporal and the spatial resolution as low as possible, that’s why another ultrafast laser is used as a probe (Fig 3.).

The ultrasound is propagating a few nanometers per picosecond through the thin film and at some point will bounce back partially or completely to come back to the surface when meeting a different medium.

The probe laser is focused at the surface, when the ultrasound hits back the surface, the reflectivity fluctuates locally over time.

The variation of reflectivity is detected and stored into the computer as a raw data.

The technique is often called picosecond ultrasonics, it has been developed at Brown University in the USA by Humphrey Maris in the mid 80’s.

The ASOPS is not the only kind of technology able to perform picosecond ultrasonics, but it’s the latest evolution and the fastest to perform a full measurement. The trick here is to slightly shift the frequency of the probe laser compared to the pump’s one (Fig. 4). Both lasers are synchronized by a separate electronical unit. The probe arrives slightly after the pump and this delay is extending with time until the whole sampling is over.

The elastic answer of the thin film to a pump excitation is too fast to be measured in real time. You have to artificially extend time and reconstruct the signal of the probe.

The measure described above is for one single point. With a more standard instrument able to perform picosecond ultrasonics, it would take several minutes. Here with the ASOPS, the measure takes less than a second. It means that by simply scanning point by point all over the surface (Fig. 5), you will get a full map of the studied mechanical parameter in minutes.

Thickness measurement

For instance if your interest is in the thickness of a thin film, you can easily retrieve an accurate value by measuring the time between two echoes of the ultrasound at the surface of the sample (Fig. 6).

Until recently, the kind of setup required to make these measurement was found in a optical lab with a large honeycomb table full of mirrors and lenses. Even though the results are respectable, the time to install and repeatability are often the main issue.

Hopefully the technology is now accessible for non-specialists who just want to focus on measuring the mechanical properties of their samples and not to take care of all the optical part. The industrialization of such an innovative and complex device is giving an easy access to new information.

Since a punctual measurement takes a few milliseconds, it is easily feasible to measure all over the surface of the sample and get a full mapping of the thickness.

In the examplebelow (Fig. 7), the sample consists of a 500 µm silicon substrate and 255 nm sputtered tungsten single layer. The scanned surface is approximately 1.6 mm x 1.6 mm and the lateral resolution in X-Y is 50 µm, 999 points in total.

A large scratch is being highlighted at the surface but the average thickness remains in the range of 250 nm. The total time of measurement is less than 10 minutes, which is comparable to a single point measurement with one laser and a mechanical delay line (homodyne system).

Until now, the industry offer for production management was only homodyne instruments performing picosecond ultrasonics measurements, reducing the full scan of the surface to a very few points checked only over a full wafer.

We just saw that single layer thin film thickness measurement is pretty straight forward. If you are dealing with more than one layer the raw data is much more complex to read. However, it is possible to model the sample and to compare the simulated signal to the actual measure with an incredible fit.

Multiphysics

When you chat with several experts of thin films, they will all agree to tell you that:

  • Thickness is a key parameter
  • Adhesion is always a problem
  • Non-destructive measurement is a fine improvement
  • Faster is better
  • Imaging is awesome

In the industry, thickness and adhesion are the main concern at all steps of the manufacturing process, whether you are working in the display or the semiconductor field. The picosecond ultrasonics technique is already used in-line for wafer inspection, which shows its maturity and yet confidentiality.

The standard procedures for adhesion measurement are applicable only on flat and large samples, and they are destructive. When it comes to 3D samples and if you want to check the adhesion on a very small surface, the laser is the only solution. Adhesion can now be verified inline all over the sample during every step of the manufacturing process.

Now the academic world has different concerns and goes deeper and deeper in the understanding of the material behavior at the atomic scale.

The ASOPS system can go beyond the picosecond ultrasonics – which is already a great source of information if we stick to thickness and adhesion –  and get even more from the raw data such as thermal information or critical mechanical parameters.

Thermal conductivity

Thermal conductivity is the parameter representing the heat conducting capability of a material.

Thin films, superlattices, graphene, and all related materials are of broad technological interest for applications including transistors, memory, optoelectronic devices, MEMS, photovoltaics  and more. Thermal performance is a key consideration in many of these applications, motivating efforts to measure the thermal conductivity of these films. The thermal conductivity of thin film materials is usually smaller than that of their bulk counterparts, sometimes dramatically so.

Compared to bulk single crystals, many thin film have more impurities which tend to reduce the thermal conductivity. Besides even an atomically perfect thin film is expected to have reduced thermal conductivity due to phonon leakage or related interactions.

Using pulsed lasers is one of the many possibilities to measure the thermal conductivity of a thin material. The time-domain thermoreflectance (TDTR) is a method by which the thermal properties of a material can be measured. It is even more suitable for thin films materials, which have properties that vary greatly when compared to the same materials in bulk.

The temperature increase due to the laser can be written as follows:

∆T(z)=(1-R) Q/(C(ζA)) exp⁡(-z/ζ)

where R is the sample reflectivity,
Q is the optical pulse energy,
C is the specific heat per unit volume,
A is the optical spot area,
ζ is the optical absorption length,
z is the distance into the sample

The voltage measured by the photodetector is proportional to the variation of R, it is possible then to deduce the thermal conductivity.

In some configuration, it can be useful to shoot the probe on the bottom of the sample (Fig. 7) or vice versa in order to get more accurate signal from one side or the other of the sample.

Surface acoustic wave

When the pump laser hits the surface, the ultrasound generated is actually made of two distinct waves modes, one propagating in the bulk, which is called longitudinal (see Fig. 1), one traveling along the surface, it’s called the Rayleigh mode.

In the industry the detection of surface acoustic wave (SAW) is used to detect and characterize cracks.

The surface wave is very sensitive to the presence and characteristics of the surface coatings, even when they are much thinner than the penetration depth of the wave. Young Modulus can be determined by measuring the velocity of the surface waves.

The propagation velocity of the surface waves, c, in a homogeneous isotropic medium is related to:

– the Young’s modulus E,
– the Poisson’s ratio ν,
– the density ρ

by the following approximate relation c=(0.87+1.12ν)/(1+ν) √(E/(2ρ(1+ν)))

When using an industrial ASOPS system to measure and image the SAW, the pump laser is fixed (Fig. 8) and always hitting the same spot.

The probe is measuring its signal around the pump laser thanks to a scanner installed in the instrument.

Future challenges

We had a quick overview of some applications and parameters that can be measured with an industrial  ASOPS imaging system. Of course it was not exhaustive, we could think for instance of adding Brillouin scattering detection in transparent material and more.

Today, ASOPS technology is moving from the margin to the mainstream. The academic community already recognizes this non-destructive technology as truly operational and able to deliver reliable and accurate measurements. For industrial applications, ASOPS systems will most certainly begin to replace standard systems in the short term and to fill the gap of ultrasonic inspection at nanometric scale.

Besides it is easily nestable in the production line while some other instruments are meant to remain research devices because they require much more care, vacuum pumps, complex settings etc.

However, the industry is far from done exploiting the full range of capabilities offered by ASOPS systems, this versatile technology also continues to be developed and validated for a broad range of other critical applications. Indeed, ASOPS systems has already shown a great potential on biological cell research. We can expect new developments to be done in the future and see instruments help the early disease detection within the next few years.