Tag Archives: Small Times Magazine

November 10, 2011 — Shanghai Simgui Technology Co. Ltd., a leading Chinese wafer manufacturer, placed a follow-on order for an EV Group (EVG) EVG850 automated production bonding system for silicon-on-insulator (SOI) and direct wafer bonding. Simgui is moving from EVG’s semi-automated wafer bonder to advance high-volume SOI production.

Simgui is a spin-off from Shanghai Institute of Microsystem and Information Technology (SIMIT). It will transfer a well-established production process to the fully automated system. Currently, the company uses an EVG301 single wafer cleaning system with pre-bonding and IR inspection station.

SOI wafers are used to make micro electro mechanical systems (MEMS) and microprocessors, as well as other microelectronics.

This order comes on the heels of another EVG install in China: new customer Shenyang Silicon Technology Co. Ltd. (SST) purchased an EVG850LT automated production bonding system for silicon-on-insulator (SOI) wafers in its state-of-the-art SOI production facility this March.

EV Group recently introduced its 450mm SOI wafer bonder.

EV Group (EVG) makes wafer bonding, lithography/nanoimprint lithography (NIL) and metrology equipment, as well as photoresist coaters, cleaners and inspection systems. More information is available at www.EVGroup.com.

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November 9, 2011 – GlobeNewswire via COMTEX — Measurement Specialties Inc. (NASDAQ:MEAS), sensor designer and manufacturer, entered into an amendment to its senior secured credit facility dated June 1, 2010, among JPMorgan Chase Bank N.A., as administrative agent and collateral agent, and certain other parties including Bank of America N.A., HSBC Bank USA N.A., Branch Banking & Trust Company and Credit Industriel et Commercial.

Details:
The Credit Agreement Amendment provides MEAS with improved pricing and additional flexibility under its minimum fixed charge ratio covenant, extended the term to 5 years from the Amendment Date, and increased the accordion expansion feature from $50 million to $75 million. MEAS’ applicable margins for the variable interest rates under the Eurocurrency or London Inter-Bank Offered Rate (LIBOR) borrowings were reduced to levels ranging from 125 to 200 basis points from levels ranging from 200 to 325 basis points. The Company’s applicable margins for the variable interest rates under the prime or ABR borrowings were reduced to levels ranging from 25 to 100 basis points from levels ranging from 100 to 225 basis points. The commitment fees on the unused balances were reduced to a range of 0.30% to 0.375% from a range of 0.375% to 0.50%. Additionally, the minimum fixed charge coverage ratio will exclude capital expenditures related to the new facilities being constructed in China and France.

On November 8, 2011, Measurement Specialties also entered into an amendment (the Prudential Amendment) to its note purchase and private shelf agreement with Prudential Investment Management, Inc. and certain other note-holders party thereto, conforming certain definitions and changes made in the Credit Agreement Amendment.

Measurement Specialties Inc. (MEAS) designs and manufactures sensors and sensor-based systems to measure precise ranges of physical characteristics such as pressure, temperature, position, force, vibration, humidity and photo optics. MEAS uses multiple advanced technologies — including piezoresistive, electro-optic, electro-magnetic, capacitive, application specific integrated circuits (ASICs), micro-electromechanical systems (MEMS), piezoelectric polymers and strain gauges — to engineer sensors that operate precisely and cost effectively.

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November 9, 2011 – Marketwire — The Ontario Centres of Excellence gave the Martin Walmsley Fellowship for Technological Entrepreneurship award, totalling $50,000, to Innovative Processing Technologies Inc. The one-year fellowship supports Ibraheem Khan’s company’s application of multiple-memory material (MMM).

Two other companies received the award as well: MyVoice Inc. (2-year) and Eve Medical (1-year).

Innovative Processing Technologies (IPT) Inc. helps implement smart materials in industrial applications. Multiple-Memory Material (MMM) technology enables greater functionality than traditional smart materials and can be applied to virtually any shape memory alloy (SMA) to locally modify properties. SMAs exhibit a shape memory, used for micro electro-mechanical systems (MEMS) and microelectronics, automotive, medical devices, and other applications. MMM enables more than one shape memory to be embedded in a monolithic component. IPT’s MMM technology also enhances other functional properties of SMAs, such as pseudoelasticity and corrosion performance.

The recipients are helping make Ontario a technological leader, said Brad Duguid, Minister of Economic Development and Innovation. The Martin Walmsley Fellowship for Technological Entrepreneurship facilitates the transition of OCE-funded university-based research into innovative business ventures. An expert panel selects the recipients, who are judged on criteria including strength of technology, commercial viability and sound business planning. The Fellowship honours the vision of Dr. Martin Walmsley, who was instrumental in founding the Ontario Centres of Excellence program in 1987.

To view a video of all of this year’s Martin Walmsley Fellowship recipients, please visit the following link: http://www.youtube.com/watch?v=XEqf9SPJGTc

Ontario Centres of Excellence (OCE) Inc. drives the commercialization of cutting-edge research across key market sectors to build the economy of tomorrow and secure Ontario’s global competitiveness. Learn more at www.oce-ontario.org.

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November 9, 2011 — National Institute of Standards and Technology (NIST) and the University of Virginia (UVA) have demonstrated that electron microscope beams can be used to move around nanoscale objects, raising the possibility of positioning and assembling nanoelectronics.

The tool is an electron-beam version of "optical tweezers:" laser-based manipulation tools used in biology, physics, and other fields. Electron beams could offer a thousand-fold improvement in sensitivity and resolution.

The "electron tweezers" effect was discovered during observation of aluminum-silicon alloys transitioning to a molten state. The researchers saw that their electron beam was being followed around by the solid core of the AlSi particle when they moved or tilted the beam or microscope stage.

The discovery was "unexpected," said NIST metallurgist Vladimir Oleshko, because of the drawbacks of working with electrons. Future applications could include fine manipulation of particles or even atoms; electron beams are three orders of magnitude smaller than photon beams. The "electron tweezers" would require a vacuum still.

Results are published here: V.P. Oleshko and J.M. Howe. Are electron tweezers possible? Ultramicroscopy (2011) doi:10.1016/j.ultramic.2011.08.015. Access the journal at http://www.journals.elsevier.com/ultramicroscopy/.

The National Institute of Standards and Technology (NIST) is an agency of the U.S. Department of Commerce. Learn more at www.nist.gov.

November 8, 2011 — Chalmers University of Technology received the majority of a new Swedish research grant of SEK40 million to study graphene. The financing comes from the Knut and Alice Wallenberg Foundation.

A group of some 30 Swedish graphene researchers will be formed, in a close collaboration between Chalmers and the universities at Uppsala and Linköping.

This will provide “valuable cross-fertilization between several research areas,” said Mikael Fogelström, the project coordinator. The grant will fund graphene production as well as its integration into various devices, and basic research into experimental and theoretical physics, Fogelström explained.

Also read: Graphene doping doesn’t need its own step when done on the edge

The researchers will develop reliable synthesis methods designed to produce high-quality graphene surfaces. Following that, the material will be investigated and processed at the nano level, developing graphene-based electronic devices.

Chalmers researchers have developed a new standard for the quantum of resistance — a “tuning fork” for calibrating the correct resistance in electrical instruments and devices. The graphene-based resistance standards are as accurate as those based on silicon (Si) or gallium arsenide (GaAs), but easier to make and use.

Chalmers has also developed a graphene transistor that operates at more than 10 gigahertz, and are currently working on hitting the terahertz range, funded by a SEK 28.5 million grant from the Foundation for Strategic Research over a five-year period.

Chalmers researchers are considering creating a graphene research center there, based on these continuous funding announcements. Fogelström says. “That would be a good step to take for pursuing EU flagship funds.”

For further details, please contact Mikael Fogelström, Department of Microtechnology and Nanoscience, Chalmers University of Technology, +46 31 772 31 96, [email protected]

Read more about the pilot project led by Chalmers that may become an EU scientific flagship

Read more about the researchers’ previous breakthroughs with graphene

November 8, 2011 — The automobile industry is a "lucrative" sensor integration market globally, as sensors that enhance comfort, fuel-efficiency, and safety are integrated by vehicle manufacturers. Micro electro mechanical system (MEMS) sensor production costs are set to drop, which will bring automotive sensors into the price/benefit range of every level of automobile, says Global Industry Analysts (GIA).

In recent years, post 2008-2009 recession, MEMS sensors have gone into vehicle safety and control products en masse: anti-lock braking systems (ABS), airbags, engine emissions control, etc. In developed nations, opportunities now exist for driver visibility and traffic assistance, such as aftermarket back up warning sensor/reverse parking sensors.

As MEMS production costs fall in the coming years, and regulatory changes make vehicle stability control and other sensors mandatory, all types of new cars will use these sensor systems.

The automotive industry jumped out of recession in 2010 thanks to significant government stimulus, and globally, government incentives will continue to drive new vehicle development. MEMS pressure sensor sales jumped with the automotive industry in 2010, used in tire pressure monitoring systems, among other applications.

Alternative vehicles will also see government backing. Even in traditional vehicles, a focus on vehicle fuel efficiency and improved powertrain performance features will result in secure gains for sensors, such as oxygen (O2) sensors, aftermarket ABS sensor, tire pressure monitoring sensors, aftermarket coolant temperature sensor, Wiegand effect sensors in aftermarket high-performance ignition systems, among numerous others.

Europe and Asia-Pacific account for a major share of the global automotive sensors market, GIA notes.

By segment, engine & transmission automotive sensors is the largest contributor to global market revenues. Global market revenues for safety & security automotive Sensors are expected to surge at a fastest CAGR of 9.2% over the analysis period.

Major players in the global marketplace include Allegro MicroSystems Inc, Analog Devices Inc, Aptina Imaging Corporation, Autoliv Inc, Bosch Sensortec GmbH, Bourns Inc, CASCO, Continental AG, Corrsys-Datron Sensorsysteme GmbH, CTS Corporation, Custom Sensors & Technologies Inc, Delphi Corporation, Denso Corporation, ELESYS North America Inc, Freescale Semiconductor Inc, GE Sensing & Inspection Technologies, Hamamatsu Photonics KK, Hamlin Electronics LP, Hella KGaA Hueck & Co, Hitachi Automotive Systems, Honeywell Sensing & Control, Infineon Technologies North America Corp, Magneti Marelli Holdings SpA, Melexis Microelectronic Integrated Systems NV, Micralyne Inc, Micron Technology Inc, NGK Spark Plugs USA Inc, NXP Semiconductors, Novotechnik US Inc, Omron Corporation, OSRAM Opto Semiconductors GmbH, Sensata Technologies, SSI Technologies Inc, TRW Automotive Holdings Corp, TT electronics plc, Universal Sensors Inc, among others.

“Automotive Sensors: A Global Strategic Business Report” provides a comprehensive review of market trends, issues, drivers, company profiles, mergers, acquisitions and other strategic industry activities. The report provides market estimates and projections (in US$ Million) for major geographic markets including the US, Canada, Japan, Europe, Asia-Pacific (excluding Japan), and Rest of World. End-use segments analyzed include Engine and Transmission, Chassis, Safety and Security, Body and Other Applications.

For more details, visit http://www.strategyr.com/Automotive_Sensors_Market_Report.asp. Global Industry Analysts Inc. (GIA) is a leading publisher of off-the-shelf market research.

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November 8, 2011 — The Heterogeneous Technology Alliance (HTA), a team of leading European technology institutes, is developing new packaging and test methods for micro electro mechanical systems (MEMS) targeting space missions.

As part of the Wafer-Level Encapsulation in Microsystems (WALES) project, HTA members are studying how wafer-level packaging (WLP) can be used to connect and protect MEMS devices in hermetically sealed structures to withstand extreme weather and radiation conditions encountered in space. The project also will provide the European Space Agency (ESA), which is funding the project, a simple and fast standardized test to evaluate the suitability of MEMS for space missions.

XRD systems at CSEM.

Also read: NASA technologist talks CNTs, nanowires, PCMs…

Led by CSEM, the project is developing procedures for sealing and testing MEMS WLP for a piezo-electrically actuated resonator from CSEM and a capacitively actuated resonator from CEA-Leti. Fraunhofer Institute for Electronic Nano Systems ENAS is applying special measuring and testing processes to guarantee the reliability of these MEMS systems. VTT, the Technical Research Centre of Finland, will join the project consortium; negotiations are currently under way.

Focused ion beam (FIB) tool at Fraunhofer.

Increased reliability via improved packaging could extend MEMS lifetimes and make them suitable for harsh environments like space missions. MEMS could increase the sensing devices on European space projects while decreasing form factor and costs.
 
The HTA was launched in 2006, bringing together microsystems institutes in an alliance of ideas and joint-development projects with industry partners. Members: CEA-Leti, CEA-Liten, CSEM, Fraunhofer Group for Microelectronics and VTT. Visit www.hta-online.eu for more information.

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November 7, 2011 — Georgia Institute of Technology (Georgia Tech) researchers compared graphene doping techniques for device interconnects and found that edge passivation is 1000x more effective than surface treatment.

Chemical doping in 3D semiconductors involves substituting oxygen or nitrogen into the silicon lattice. Since graphene is two dimensional carbon, substituting atoms vastly degrades its electron mobility and other unique properties. In conventional three-dimensional semiconductors, doping controls the density of electron carriers, and it will be needed in graphene-based electronics as well.

While graphene cannot be chemically doped in the same way as 3D transistors, doping may be combined with other fabrication steps in making graphene devices and interconnects, says James Meindl, director of Georgia Tech’s Nanotechnology Research Center.

Image 1. This scanning electron microscope image shows contacts placed onto a graphene sheet. SOURCE: Kevin Brenner, GA Tech.

“When we work with a three-dimensional semiconductor, we embed the dopant species in the bulk material and then fabricate it into a device,” said Kevin Brenner, a graduate research assistant in the Georgia Tech School of Electrical and Computer Engineering. “With graphene, we will dope the material as we process it and fabricate it into devices or interconnects. Doping may be done as part of other fabrication steps such as plasma etching, and that will require us to reinvent the whole process.”

Using sheets of exfoliated graphene, Brenner and collaborators Raghu Murali and Yinxiao Yang evaluated the effectiveness of edge passivation by coupling electron-beam lithography with a common resist material, and adsorption from coating the surface of the material. The edge treatment, which chemically reacts with defects created when the material is cut, was a thousand times more efficient at producing carriers in the graphene sheets than the surface treatment.

Edge treatment keeps the graphene’s center free of defects, maintaining very high mobility and other graphene-specific characteristics, said Brenner. Carrier densities were high.

Because of the two-dimensional nature of the graphene, controlling the edge chemistry can provide control over the bulk properties of the sheet.  “At nanoscale dimensions, the edge atoms tend to dominate over surface adsorption techniques,” he added. “With a 7nm2 graphene device, passivating just 1 edge C-atom provides the doping equivalent of covering the entire surface.”

For doping the edge of a graphene structure, the team applied a thin film of hydrogen silsesquioxane (HSQ), a chemical normally used as a resist for etching, then used electron beam lithography to cross-link the material, which added oxygen atoms to the edges to create p-type doping.  The resist and electron beam system combined to provide nanometer-scale control over where the chemical changes took place.

Image 2. Graduate research assistant Kevin Brenner holds a graphene sample under study in the Georgia Tech Nanotechnology Research Center. The cryogenic probe station shown behind him is used to study doping effects in the material. SOURCE: Gary Meek, GA Tech.

Doping treatment could also be applied using plasma etching, Brenner said. Controlling the specific atoms used in the plasma, or conducting the etching process in an environment containing specific atoms, could drive those atoms into the edges where they would serve as dopants. Any edge is a location where you can passivate with a dopant, oxygen, nitrogen, hydrogen, etc.

Beyond fabricating electronic devices, Nanotechnology Research Center scientists are interested in using graphene for interconnects, potentially as a replacement for copper.  As interconnect structures become smaller and smaller, the resistivity of copper increases.  Edge-doped graphene sheets exhibit a trend of increasing doping with reduced dimensions, possibly becoming more conductive as their size shrinks below 50nm, making them attractive for nanoscale interconnects.

“The next step is to begin putting this into nanoscale devices,” Brenner said. 

Details of the research were published online in the journal Carbon. Access it here: http://www.sciencedirect.com/science/article/pii/S0008622311007573.

The research was supported by the Semiconductor Research Corporation (SRC), the Defense Advanced Research Projects Agency (DARPA) through the Interconnect Focus Center, and the National Science Foundation (NSF).

Learn more about Georgia Institute of Technology at http://gatech.edu/

November 7, 2011 — Jerry Su and Jimmy Huang, research analysts at Credit Suisse, expect low LCD TV inventory levels in Asia to trigger an LCD panel buying spree in the near term to restock in time for consumer spending at Chinese New Year. Panel makers, as well as backend foundries and driver IC suppliers, will benefit.

Recent supply chain checks suggest Chinese TV makers are restocking panels as LCD TV inventory is now down to ~4 weeks after the October Golden Week Holiday (versus normal inventory level of ~5 weeks), which should trigger panel restocking demand in the near term for 2012 Chinese New Year holiday sales.

AUO and CMI, which account for about 55% of TV panel market share in Chinese local brands, will see a boost in orders, as may Novatek.

Figure. China LCD TV inventory down to ~4 weeks after Golden Week. SOURCE: Witsview, Credit Suisse estimates.

After an inventory overbuild in 2010, Chinese TV brands became more cautious about managing inventory in 2011. China LCD TV inventory reached ~6 weeks in July and August, but has now fallen below the normal level, triggering a near-term splurge on panels to restock for 2012 Chinese New Year consumer spending.

Driver IC makers and backend foundries are seeing rush orders recently for inventory restocking. Chipbond (6147 TT, NR), the largest gold bumping service provider globally, commented in its analyst meeting that it expects its 4Q11 revenue to remain flattish to up slightly on strong mobile device demand and rush orders triggered by inventory restocking from China TV brands starting from 2H October.

November 7, 2011 — BUSINESS WIRE — MEMS foundry Micralyne Inc. brought Nanoshift LLC, a product development firm specializing in emerging technologies, on board for design, process development, fabrication and packaging partnerships.

Micralyne has a similar partnership with A.M. Fitzgerald & Associates (AMFitzgerald).

This integrated design and manufacturing approach targets lower entry barriers to micro electro mechanical system (MEMS) device companies looking to commercialize products. The partnership takes Nanoshift from third-party supplier to an "essential part" of the Micralyne business model, said Nancy Fares, CEO of Micralyne.

Fares adds that the partnership approach "minimizes risk and cost" in the transition from proof-of-concept to volume production. The integrated model streamlines market introduction, added Salah Uddin, co-founder of Nanoshift, "moving IP through prototype, design and production." Customers work with a central project manager in the unified approach.

Nanoshift recently licensed Silex Microsystems’ Sil-Via MEMS packaging technology.

Micralyne is an independent MEMS foundry. For more information on Micralyne, please visit: www.micralyne.com.

Nanoshift LLC is a privately held design and development company that specializes in emerging technologies. For more information on Nanoshift, please visit: www.nanoshift.net.

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