04/16/2013 

Error correction code and redundant addresses are both techniques well-known in memories as a way of optimizing yield. But new data from the University of Ferrara shows that these common techniques may be overused. By classifying erratic bits more carefully, it’s possible to use less ECC and up to 35 percent less redundancy.

04/16/2013 

The ability of a resistive RAM device to maintain its resistance state, otherwise known as retention time, can be impacted by the electrode materials used.

04/16/2013 

New flash memory chips are replacing the floating gate with thin layers of material that "trap the charge." The charge trap is a sandwich of materials such as silicon-oxide-nitride-oxide-silicon (SONOS), metal-oxide-nitride-oxide-silicon (MONOS) and tantalum-aluminum oxide-nitride-oxide-silicon (TANOS), all of which are substantially smaller than the floating gate.

04/16/2013 

At the International Reliability Physics Symposium (IRPS), being held April 14-18, 2013 at the Hyatt Regency Monterey Resort & Spa in Monterey, CA, imec will present new research focused on the stress induced breakdown between the tungsten trench local interconnects (M1, M2) and metal gate in a 28nm CMOS technology. Imec’s Thomas Kauerauf will present a paper titled “Reliability of MOL local interconnects.”

04/16/2013 

New finFETs feature high-k dielectrics, which are better than conventional silicon nitride dielectrics in that they can be thinner, yet still enable good control of the transistor’s channel region from the gate.

04/16/2013 

It’s well-known that transistors generate heat when they’re operating, and that can have a significant impact on the chip’s reliability and longterm longevity. A small increase of 10°C–15°C in the junction temperature may result in ? 2× reduction in the lifespan of the device.

04/16/2013 

FinFETs offer several advantages compared to traditional planar transistors, but it’s not yet clear what kind of new reliability problems might arise as FinFETs are scaled to smaller dimensions.

04/11/2013 

Several years ago when the challenges to 450mm wafer processing, EUV development and novel transistor designs were first being discussed, SEMI commissioned a study that predicted the industry could face an R&D funding gap that could exceed $9 billion if current technology and economic trends continue.

04/11/2013 

Over the last few years, glass has gained considerable interest from the semiconductor industry due to its very attractive electrical, physical and chemical properties, as well as its prospects for a relevant and cost-efficient solution. The application scope of glass substrates in the semiconductor field is broad and highly diversified.

04/11/2013 

Natcore Technology Inc. announced major strides in advancing its black silicon solar cells to commercial levels of efficiency and, as part of its development process, has discovered that its technology could finally provide a low-cost selective emitter application.

04/11/2013 

Samsung has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class process technology this month. This chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).

04/10/2013 

 Electro Scientific Industries, Inc. today announced it had signed a definitive agreement to acquire the Semiconductor Systems business of GSI Group, Inc., a supplier of precision photonics, laser-based solutions and precision motion devices to the medical, industrial, scientific, and electronics markets

04/10/2013 

Advanced Micro-Fabrication Equipment Inc. (AMEC) said today that it has developed a Single-Station Chamber Advanced Dielectric Etcher (SSC AD-RIE) capable of processing the most rigorous semiconductor applications.

04/09/2013 

In an effort that will accelerate commercialization of extreme ultraviolet (EUV) lithography technology and the development of next-generation transistors, SEMATECH announced today that Intermolecular, Inc. has joined SEMATECH’s Lithography and Front End Processes (FEP) programs.

04/05/2013 

Solid State Technology is excited to announce that Mark Thirsk, managing partner at Linx Consulting, will be discussing the cost and technology needed to implement next-generation device technology at The ConFab 2013. Thirsk has over 20 years of experience in the chemical industry, working with a variety of materials and processes utilized in wafer fabrication.

04/04/2013 

Fulfilling the promise of performance and power scaling at 16nm, ARM and Cadence today announced details behind their collaboration to implement the first ARM Cortex-A57 processor on TSMC's 16nm FinFET manufacturing process.

04/04/2013 

AIXTRON SE today announced that it is participating as a key partner in the recently announced European Union (EU) Future Emerging Technology (FET) flagship project “Graphene.”

04/03/2013 

The Temescal Division of Ferrotec Corporation today announced the Temescal UEFC-5700, a ultra-high efficiency electron beam metallization system for lift-off compound semiconductor applications.

04/02/2013 

ARM and TSMC today announced the first tape-out of an ARM Cortex-A57 processor on FinFET process technology.  The Cortex-A57 processor is ARM's highest performing processor, designed to further extend the capabilities of future mobile and enterprise computing, including compute intensive applications such as high-end computer, tablet and server products.

04/01/2013 

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing and design, today announced that worldwide sales of semiconductors reached $23.25 billion for the month of February 2013, an increase of 1.4 percent from February 2012 when sales were $22.93 billion. Effective government policies needed to spur stronger growth.