Wafer Processing

WAFER PROCESSING ARTICLES



Sumitomo Chemical joins Holst Center for OLED materials research

09/26/2012 

Sumitomo Chemical has joined the Holst Center's shared research program on printed organic lighting and signage, to contribute to research into multilayer solution processes for high-efficiency organic light-emitting diodes (OLEDs).

TSMC's schedule for 450mm mass production -- and lithography is the key

09/26/2012 

During sessions at this month's SEMICON Taiwan, execs from TEL, Lam Research, Applied Materials and KLA-Tencor revealed the latest developments in 450mm technology.

TriQuint to boost GaN power amplifiers for DARPA

09/24/2012 

TriQuint Semiconductor says it has received a $2.7M contract from the Defense Advanced Research Projects Agency (DARPA) to triple the power handling performance of gallium nitride (GaN) circuits.

Chip demand still sliding, hopes for soft 3Q landing and recovery

09/21/2012 

Demand for chip tools fell again in August and is off by -30% from its peak in early summer, fulfilling fears that the second half of 2012 will be sluggish for chipmaking investments, according to the latest data from SEMI.

TSMC integrates Ge on Si in p-type FinFETs

09/20/2012 

At this year’s International Electron Devices Meeting (IEDM), foundry TSMC will describe a heterogeneous epitaxial growth process which for the first time enables Ge to be directly grown on Si.

Horizontal channels key to ultra-small 3D NAND

09/20/2012 

The first working 3D NAND flash memory at sub-40nm feature sizes will be described by Macronix researchers at this year’s International Electron Devices Meeting (IEDM).

RRAM synapses mimic the brain

09/20/2012 

At this year’s IEDM, a team led by Korea’s Gwangju Institute of Science and Technology will detail a high-speed pattern-recognition system comprising CMOS “neurons” and an array of resistive-RAM (RRAM)-based “synapses,” which demonstrated STDP, a brain-like function.

Molybdenum sulfide: the new graphene?

09/20/2012 

Researchers have begun to investigate a new 2D material—molybdenum sulfide (MoS)—which has similar characteristics but offers something graphene doesn’t: a wide energy bandgap, enabling transistors and circuits to be built from it directly.

On-board heaters can self-heal flash memories

09/20/2012 

At the upcoming International Electron Device Meeting, Macronix researchers will describe how they built flash memories that could heal themselves by means of tiny onboard heaters that provide thermal annealing just at the spots where it is needed.

Everspin to unveil highest-density ST-MRAM

09/20/2012 

In an invited paper at the International Electron Devices Meeting, researchers from Everspin Technologies will describe how they built the largest functional ST-MRAM circuit ever built, a 64-Mb device with good electrical characteristics.

Better than FinFETs: Hybrid-Channel SOI

09/20/2012 

At the International Electron Devices Meeting (IEDM) in December, a team led by IBM will report on the world’s first high-performance hybrid-channel ETSOI CMOS device.The researchers built a ring oscillator circuit to benchmark performance that worked even better than FinFETs.

Why IC market growth will expand despite economic and technology challenges

09/20/2012 

Even with the persistent troubles in global economics and various technology hurdles in advanced semiconductor manufacturing, IC market growth will continue to improve -- and the key is a shift away from what's been driving the market dynamics, explains IC Insights.

China's IMR orders Aixtron system for carbon nanotube, graphene research

09/20/2012 

The Institute of Metal Research (IMR) at the Chinese Academy of Sciences has ordered a new Aixtron tool to support its research in carbon nanotubes and graphene technologies.

Semi-Gas uncrates gas mixture automation system

09/20/2012 

Semi-Gas Systems is now offering an automatic gas sampling system that eliminates operator touch time while certifying cylinders of blended gas mixtures.

Brooks Automation laying off 10% of workforce

09/19/2012 

The semiconductor equipment maker is battening down the hatches to reduce costs and improve profitability in the face of near-term macroeconomic conditions.

LFoundry to invest EUR 25 million in R&D

09/19/2012 

LFoundry says it will invest a total of €25 million in R&D and innovative projects over the next three years, thanks to " the materialization of several large-scale projects."

IBM demos high-performance CMOS on flexible plastic substrates

09/18/2012 

At IEDM, IBM researchers will demonstrate high-performance state-of-the-art CMOS circuits —including SRAM memory and ring oscillators—on a flexible plastic substrate.

Using waste silicon to make Li-ion batteries

09/14/2012 

Researchers at Rice U. and the Université catholique de Louvain in Belgium have devised a method for converting discarded silicon into a key material for lithium-ion batteries.

iPhone 5: Which semiconductor suppliers are the big winners?

09/14/2012 

As the dust settles after the launch of the iPhone 5, analysts tally which suppliers in the semiconductor ecosphere are most likely to gain the most.

Dow launches CMP polishing pad platform

09/14/2012 

Dow Electronic Materials introduced its new IKONIC polishing pad platform for chemical mechanical planarization (CMP).




WEBCASTS



Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

Date and time TBD

As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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