3D Integration

3D INTEGRATION ARTICLES



Rudolph-Asia-OSAT-collab-on-2D-defect-inspection-3D-solder-bump-TSV-depth-metrology-for-stacked-die

11/30/2010 

Rudolph’s NSX Series Macro Defect Inspection Systems Rudolph Technologies Inc. (RTEC) is partnering with a major outsourced semiconductor assembly and test (OSAT) services manufacturer to provide its inspection and metrology capability in the development of stacked packaging processes. The process uses silicon interposer technology, sometimes referred to as 2.5D IC, as an intermediate step toward full blown 3D ICs.

Alchimer-Electrografting-for-3D-TSV-apps-validated-by-RTI

11/30/2010 

Alchimer's Electrografting (eG) technology has been validated by scientists at RTI International (RTI). The paper confirmed that electrografting is a proven technology for depositing "insulator, barrier and seedlayer into high aspect ratio TSVs for 3D integration applications."

TSMC-work-on-Si-interposers-TSV-die-stacking

11/26/2010 

TSMC packaging interviewDi Ma spoke with Debra Vogler, senior technical editor, ElectroIQ, about TSMC's work with silicon interposers, die stacking with through-silicon vias (TSV), and gate-last transistor fab.

FDSOI-to-TSV-IEDM-preview-CEA-Leti research

11/23/2010 

CEA-Leti will present 10 papers, including two invited papers, at the IEDM/IEEE 2010 International Electron Devices Meeting December 6-8, in San Francisco, CA. The papers will cover More than Moore, FDSOI, memory (phase-change and charge-trapping), silicon nanowires, TSVs, high-k dielectrics, and more.

Deep-submicron-changes-advanced-packaging-Bill-Bottoms

11/17/2010 

In his keynote address at the MEPTEC Semiconductor Packaging Roadmaps conference, Bill Bottoms, chairman of Third Millennium Test Solutions (3MTS), gave attendees a dose of reality as he summarized the predicament facing the industry as it pursues 3D ICs. "Everything becomes more difficult at deep sub-micron," said Bottoms.

Amkor-3-generations-of-3D-packaging

11/15/2010 

In this podcast interview, Smith discusses the three generations in the transition to 3D packaging and how the OSATs shape the development roadmap. Smith says that we need complete supply chain collaboration: EDA tool suppliers, equipment/materials suppliers, logic, memory, fabless, IDMs, and the SATs, to develop and deploy the technologies.

3D ICs in the spotlight at IMAPS

11/11/2010 

Talks at the recent IMAPS annual meeting in Raleigh, NC put 3D ICs and through-silicon vias under the spotlight, reports Dr. Phil Garrou -- lowering costs, fixing test problems, developing standards, and who will eventually pay for it all (hello memory!).

Flip chip PoP is perfect for mobile, if done right

11/10/2010 

Craig Mitchell, TesseraPackage-on-package, implemented with flip chip package assembly, is meeting requirements for next-gen mobile devices. Challenges remain: fine pitch underfill, brittleness of ultra low-k (ULK) dielectrics, and shorting between adjacent bumps. Craig Mitchell, Tessera, examines the lucrative 3D packaging step and how to face these challenges.

Package-on-package-POP-survey-Stack-packages-at-SATS

11/08/2010 

Advanced Packaging asked our readers where -- at the foundry, in a dedicated semiconductor assembly and test services (SATS) house, or on the SMT line -- package-on-package (POP) assembly should take place.

Vertical-die-stacking-goes-3D-without-TSV

10/28/2010 

vertical die stack technologyAndrew Smith, Ventmark Technology Solutions, presents a 3D die stacking technology to address package miniaturization. Using bare die and vertical interconnect structures, this stacking technology permits the design of ultra-thin, near-CSP solutions without TSVs. Designers lacking custom ICs should look to new chip stacking technology.

RAM-memory-research-A-RAM-RERAM-MSDRAM-MELRAM projects

10/27/2010 

CNRS research on memory wafer fabWhile speculation abounds about what will be the next generation of memories and their applications, CNRS, a French government-funded research organization, has 4 new concepts of memories in 2010. The organization is actively recruiting collaborators on RE-RAM, A-RAM, MS-DRAM, and MELRAM memory technologies.

Xilinx stacked silicon interconnect creates multi-die FPGA for high density, bandwidth

10/27/2010 

Xilinx multi-die FPGA packageXilinx (XLNX) debuted a stacked silicon interconnect technology for breakthrough capacity, bandwidth and power savings using multiple FPGA die in a single package. The stacked silicon package suits applications that require high-transistor and logic density, as well as intense computational and bandwidth performance. This article includes a podcast interview with the company about the technology.

Nanoplas targets 200mm MEMS and 3D TSV packaging with dry processing tool

10/26/2010 

Nanoplas toolNanoplas introduced a fully automatic dry-processing batch system for high-volume 200mm production. The DSB 9000A is based on Nanoplas’s High Density Radical Flux (HDRF) technology.

3D architectures for semiconductor integration and packaging: Conference preview

10/14/2010 

The International Conference "3-D ARCHITECTURES FOR SEMICONDUCTOR INTEGRATION AND PACKAGING" will take place December 8-10, 2010 at the Hyatt Regency San Francisco Airport Hotel. Check out the planned keynotes and topics of the conference.

A day at Albany CNSE: Leading-edge techs, innovation vs. efficiency

10/12/2010 

A daylong series of presentations, facility tour, and one-on-one discussions at a recent SEMI-hosted seminar at the U. of Albany College of Nanoscale Science and Engineering (CNSE) spurred intense discussion about the state of leading-edge chipmaking technologies, including 3D ICs and new device structures, and why Wall Street and roadmaps are hampering true technology innovation.

austriamicrosystems extends beyond standard foundry offering into advanced packaging

10/07/2010 

austriamicrosystems Full Service Foundry introduced "More Than Silicon," a comprehensive service and technology package that goes beyond standard foundry services. Foundry customers receive access to leading-edge technology add-ons, advanced packaging services, and dedicated support engineers to enable first-time-right designs.

New 300mm TSV production processes aim of SPTS, CEA-Leti partnership

10/06/2010 

CEA-Leti and SPTS will develop advanced 300mm through-silicon via (TSV) 3D IC processes. The agreement defines their collaboration on a range of 3D TSV processes to optimize etch and deposition technologies used to create next-generation high aspect ratio TSVs.

3D roadmaps begin to converge

10/04/2010 

Last month's SEMICON Taiwan 3D Technology Forum shed some insight into what several foundries, assembly houses and customers are thinking about the timing for 3D interposers and full 3D IC, reports Phil Garrou.

Forging a TSV supply chain in a consolidated market

10/01/2010  Steve Lerner, Alchimer S.A., Massy, France

PoP rework: Process control and using the right materials increases yield

09/13/2010 

POP after package rework.PoP packages present some unique rework challenges, such as how to rework an underfilled package; also, these packages are prone to warpage. Inspecting the area array devices can be a challenge. Bob Wettermann, BEST Inc., discusses rework solutions.




WEBCASTS



Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

Date and time TBD

As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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