Category Archives: LED Manufacturing

July 9, 2012 — Soitec (Euronext), semiconductor materials developer and producer for the electronics and energy industries, partnered with Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian), materials, devices and systems supplier for the lighting industry, to jointly develop gallium nitride (GaN) template wafers using hydride vapor phase epitaxy (HVPE). The resulting GaN template wafers will reduce the cost of manufacturing light-emitting diodes (LEDs).

The companies’ joint development agreement aims at validating the manufacturability and enabling the commercialization of GaN template wafers using Silian’s sapphire substrates and Soitec’s HVPE technology.

Soitec and Silian plan to begin sampling GaN template wafers this year.

Also read: Soitec, Sumitomo Electric scale GaN engineered wafers to 6"

Soitec developed HVPE at its Phoenix Labs, using production-proven silicon epitaxy equipment features and adding its gallium source and delivery system, said Chantal Arena, vice president and general manager of Soitec Phoenix Labs. Soitec developed high growth rate processes that work with its low-cost precursor. According to the company, GaN template wafers fabbed with HVPE are more cost effective than those made via metal organic vapor phase epitaxy (MOVPE).

Silian will adopt Soitec’s HVPE technology, said David Reid, COO of Silian, offering the GaN templates to its sapphire substrate customers. Silian is undergoing extensive sapphire substrate manufacturing expansion activities in China.

LED makers can free up as much as 60% of their MOVPE capacity by adopting HVPE, enabling them to focus on the more custom layers in the light-emitting design of the LED chip, said André-Jacques Auberton-Hervé, president and CEO of Soitec.

Soitec is also exploring the possibility of expanding its cooperation with Silian into the field of LED lighting, leveraging Soitec’s expertise in epitaxial growth.

Chongqing Silian Optoelectronics Science & Technology Co., Ltd (Silian) was founded by China Silian Instrument Group Co., Ltd for the development of LED industry. After the acquisition of the Honeywell sapphire substrate business, Silian has become China’s first enterprise with high quality large diameter sapphire substrate production and R&D capabilities. Silian’s product range covers a full spectrum of the LED supply chain, from world leading large diameter sapphire substrates, packaged LEDs, LED display screens, LED lighting applications and smart lighting system control technology. Based on the core technologies of sapphire substrates, LED lighting and a flexible manufacturing base, Silian is the most complete and the largest semiconductor energy-efficient industrial base in western China. Silian has a strong sales and distribution network, sub-manufacturing plants and R&D centres located in China and North America. For more information, visit: www.silianopto.com

Soitec is an international manufacturing company, a world leader in generating and manufacturing revolutionary semiconductor materials at the frontier of the most exciting energy and electronic challenges. Soitec’s products include substrates for microelectronics (most notably SOI: Silicon-on-Insulator) and concentrator photovoltaic systems (CPV). The company’s core technologies are Smart Cut™, Smart Stacking™ and Concentrix, as well as expertise in epitaxy. Applications include consumer and mobile electronics, microelectronics-driven IT, telecommunications, automotive electronics, lighting products and large-scale solar power plants. Soitec has manufacturing plants and R&D centers in France, Singapore, Germany, and the United States. For more information, visit: www.soitec.com

Visit the LED Manufacturing Channel on Solid State Technology and subscribe to the LED Manufacturing News monthly e-newsletter!

July 6, 2012 — We at Solid State Technology have compiled the best conference reports so far this year, in the lead up to SEMICON West 2012, next week in San Francisco. Be sure to bookmark our SEMICON West 2012 Channel for all the info from that show.

Focus on lithography

@ EUVL workshop: Focus on source power, timing

Dr. Vivek Bakshi, president of EUV Litho Inc., reports on the 2012 EUVL Workshop (June 4-8 in Maui, HI), where attendees shared their latest technology developments and discussed ways to address the challenges of EUVL insertion into HVM.

@ SPIE: The spring of EUVL

Dr. Vivek Bakshi, president of EUV Litho, Inc., reports on the SPIE Advanced Lithography conference. He says that this year even the loudest criticism of EUVL was not about “if” but “when,” and the predicted range of insertion for EUVL in high volume manufacturing (HVM) is now 2013-15.

@ SPIE: Intel’s, TSMC’s tool roadmap takeaways

After attending SPIE Advanced Lithography, Barclays Capital came away with a lower lithography tool shipments forecast, more hope for EUV lithography, and expectations of a litho buying spree at Intel.

@ SPIE: eBeam Initiative roadmap

The eBeam Initiative, a forum for new IC manufacturing approaches based on electron beam (e-beam) lithography, will unveil its latest roadmap at the SPIE Advanced Lithography Symposium.

 

Focus on yields/productivity

@ ISMI Manufacturing Week: Productivity challenges identified

Semiconductor manufacturers identified key factory productivity challenges that need to be addressed and shared effective solutions they will need to stay leading-edge and competitive amid turbulent industry transitions during the recent ISMI Manufacturing Week.

@ The ConFab: Legacy semiconductor fab issues

Bill Ross of ISMI and Joanne Itow of Semico report on the ConFab 2012 Executive Roundtable. Older production facilities face equipment obsolescence; skills obsolescence; scarce availability of parts, software, and support; and equipment capability extension and tool re-use.

@ Lightfair: MOCVD capex disobeys fab utilization rules

Barclays Capital analysts attended Lightfair International and gleaned several trends in LEDs and OLEDs for lighting, including an interesting phenomenon around MOCVD utilization rates and new orders.

@ ISS 2012: Profitability threatened

Industry leaders at the 35th annual SEMI Industry Strategy Symposium (ISS) described a perfect storm of cost, complexity and uncertainty as the industry struggles with process engineering complexity at sub-28nm nodes, hazy EUV installation schedules, 3D-IC challenges, and planning for a 450mm wafer transition, reports SEMI.

 

Focus on packaging

@ IMAPS Device Packaging: Vias and more vias

IMAPS Device Packaging’s papers were recently released, and blogger Dr. Phil Garrou shares highlights from SSEC, Asahi Glass, Hitachi Chemical, and others. He also takes a look at Fujitsu’s low temp Cu-Cu bonding technology.

@ The ConFab: A 2.5D/3D interconnect supply chain or ecosystem?

With many advanced packaging processes taking place on the semiconductor wafer, the traditional supply chain of front-end fab at the foundry and back-end fab at the packaging and test house is falling apart. Amkor, GLOBALFOUNDRIES, ASE, and Xilinx’s presenters offer ideas.

@ IITC: From TSV to back-end memory work

The 15th IITC took place in San Jose, CA. Recurring themes this year were variations on 3D and TSV, novel systems and packaging, and back-end memory, blogger Michael Fury reports.

@ ECTC: 3D integration and TSVs

A main focus of this year’s Electronic Components and Technology Conference (ECTC), held in San Diego, was 3D integration and TSVs, blogs Pete Singer, editor-in-chief.

 

Focus on emerging technologies

@ MEMS Executive Congress Europe: MEMS everywhere

Karen Lightman, the Managing Director of the MEMS Industry Group, blogs from the MEMS Executive Congress Europe in Zurich, Switzerland.

@ MRS Spring: Organic electronics

Fury reports from the MRS Spring 2012 meeting in San Francisco. Highlights: electronic skin, energy storage with nanowires, printable inks, gas sensing, inkjet printing, semiconductor polymers for organic devices, CNTs, OFETs, touch screen fabrics, and the coffee breaks.

@ SensorsCon: MEMS, networks, and camera pills

SensorsCon 2012 was held March 21 at the Santa Clara TechMart Center, in conjunction with the annual meeting of the ISQED. This is the first such meeting focusing on sensor technology, with about 60 attendees. As a design conference, the focus was more on system design and architecture, reports Fury.

@ Lightfair China: Low LED prices, subsidy’s role, and MOCVD update

Guangzhou (China) Lightfair Conference is the biggest lighting fair in Asia. Citi analyst Timothy Arcuri notes trends in LED manufacturing and pricing ahead of China’s subsidy program going into effect.

July 5, 2012 – BUSINESS WIRE — Sapphire grown in ARC Energy’s proprietary CHES yields 5% brighter light emitting diodes (LEDs) than the industry standard, according to the company’s study. The study purposefully included sapphire material exhibiting a wide range of etch pit distortion (EPD) levels to determine whether or not EPD affects LED manufacturing.

The study took sapphire through the complete LED chip manufacturing process and concluded that all material passed LED standards and that no correlation was found between LED performance and EPD level of CHES wafers.

ARC Energy’s CHES furnaces are unique in several ways. One key advantage is dramatically higher material utilization due to sapphire growth on the c-plane. This approach produces large diameter substrates at a significantly lower cost. Greater than 75% material utilization can be achieved using c-plane ARC Energy CHES furnaces while other methods are limited to less than 35%. CHES furnaces are also highly automated—a key feature which brings operator costs down and provides consistent output.

CHES furnaces are designed to produce higher performance sapphire at larger wafer sizes compared to older technologies. A CHES furnace produces high-yield sapphire up to 10" diameter, providing higher efficiency downstream in the LED manufacturing process and upstream as c-plane growth significantly reduces waste.

The study results show CHES-grown sapphire is capable of production-level performance. As the HB-LED market expands, CHES gives sapphire growers significant advantages, including higher yield, a scalable technology, and better LED chip performance. ARC Energy offers CHES furnaces and a variety of support services for crystal growth companies seeking to lead in the HB-LED industry.

The results were released in the white paper “LED Manufacturing Study on CHES Sapphire” available at www.arc-energy.com. The company is performing a series on CHES called “CHES Foundations,” covering CHES technology and CHES furnaces.

The Advanced RenewableEnergy Company, LLC (ARC Energy) provides highly automated and efficient sapphire crystal growth and processing systems to enable rapid scale production and cost reduction of LEDs. For additional information about ARC Energy, visit www.arc-energy.com.

Visit the LED Manufacturing Channel on Solid State Technology and subscribe to the LED Manufacturing News monthly e-newsletter!

July 3, 2012 – BUSINESS WIRE — Light-emitting diode (LED) makers Cree Inc. (NASDAQ:CREE) and SemiLEDs Corporation (NASDAQ:LEDS) have agreed to end their respective patent infringement litigation against each other.

As part of the settlement, SemiLEDs agreed to make a one-time payment to Cree for past damages and to an injunction, effective October 1, 2012, to stop the importation and sale of SemiLEDs’ accused products in the US.

The parties have agreed to withdraw the remaining claims without prejudice to the right to assert their respective claims in the future.

SemiLEDs develops and manufactures LED chips and LED components primarily for general lighting applications. SemiLEDs sells blue, green and ultraviolet (UV) LED chips under the MvpLED brand. Learn more at http://www.semileds.com/.

Cree makes lighting-class LEDs, LED lighting, and semiconductor products for power and radio frequency (RF) applications. For additional product and company information, please refer to www.cree.com.

Visit the LED Manufacturing Channel on Solid State Technology and subscribe to the LED Manufacturing News monthly e-newsletter!

June 29, 2012 – Marketwire — Silicon carbide (SiC) semiconductors will see 38% compound annual growth rate (CAGR) through 2022, according to “SILICON CARBIDE (SIC) SEMICONDUCTOR MATERIALS & DEVICES (DISCRETES & CHIP) MARKET – GLOBAL FORECASTS & ANALYSIS (2012 – 2022),” a new report from MarketResearch.com.

In the next 10 years, SiC will join silicon as a mass manufacturing material for semiconductors. The total SiC semiconductor devices’ market revenue (including power, opto & high-temperature) stands at approximately $218 million in 2012 and is expected to reach $5.34 billion by 2022.

SiC offers wider band gap, larger critical electric field, and higher thermal conductivity than silicon. SiC semiconductors and microelectronics offer certain technological advantages over silicon devices, including up to 20% higher efficiency, inherent radiation resistance, high-temperature/voltage operational stability, better power handline and smaller form factors. Discretes based on SiC include Schottky diodes, MOSFETs, and the other advanced transistors, as well as opto-semiconductors (LEDs, laser diodes), and high-temperature rad-hard semis.

Over the past decade, research was carried out on a massive scale to develop SiC-based discretes (MOSFETs & various types in them, IGBTs, diodes & rectifiers, thyristors, and other FETs) and ICs that have advanced and sophisticated characteristics and offer better flexibility for use in several power applications. With such promising futures, the SiC semiconductor devices market is expected to grow robustly at a high CAGR of 37.67% from 2012 to 2022.

The SiC market’s competitive landscape had only a handful of players in the beginning of the previous decade, but it quickly emerged into a vast network with more than forty key players combining both — materials & devices.

Currently, the overall SiC power semiconductors market accounts for less than 1% of the total power semiconductors market (currently at $34 billion including power discretes and power ICs), but over the next ten years, the entire base for power semiconductors & electronics players is expected to penetrate this new value chain, thereby rapidly increasing the percentage share.

Use of SiC in specifically the industrial, power, solar & wind sector (for power applications) also enables smaller heat sink, passive, and magnetic nature in system designs.

SiC electronics also find applications in electric vehicles and hybrid electric vehicles, rail transportation, power supply units, photovoltaic applications, converters & inverters, and many more.

This report defines and segments the global SiC Semiconductor market with analysis and forecasting of the revenues and volumes for the overall market and all its sub segments. This report mainly focuses on three major aspects — the Market Overview (Landscape), the Market Analysis (Dynamics) and the Market Classification (Segmentation). Extensive and detailed classification of the SiC semiconductor devices market is done in this report by technology, products, devices, application and geography. Since the report mainly covers the SiC semiconductor market whose parent market is the global semiconductor market, the report also includes various aspects related to the overall semiconductor industry in several instances throughout the report in various chapters. A comparison of various aspects, of each market segment with its parent market (for example, SiC power semiconductors with overall power semiconductors) is done at every possible level to give an idea about the total addressable markets for each market segment and the market penetrations.

This report is focused on giving a complete bird’s eye-view of the upcoming industry with regards to SiC semiconductor market with highly detailed market segmentations, combined with high level qualitative analysis at each and every aspect of the classifications done by technology, polymer types, substrate technology, technology (process) node, product & device types, applications, and geography. All the numbers, both revenue & volumes, at every level of detail are forecasted till 2022 to give a glimpse of the potential revenue base in the SiC industry and market. The report also gives the market dynamics by identifying the major driving and restraining factors for the global market with analysis of trends, opportunities, winning imperatives, and burning issues along with porter’s five force analysis of the SiC semiconductor devices market.

MarketResearch.com provides global market intelligence products and services. For more information, visit: http://www.marketresearch.com/MarketsandMarkets-v3719/SILICON-CARBIDE-SIC-SEMICONDUCTOR-MATERIALS-7012606/

Visit the Semiconductors Channel of Solid State Technology!

June 29, 2012 – Marketwire — Cambridge NanoTech, maker of atomic layer deposition (ALD) technologies, entered a licensing agreement with Ghent University in Belgium to commercialize an ALD particle coating technology. 

Cambridge NanoTech ALD systems are used in the production of semiconductors, flat panel displays, and solid state lighting. The new system, Cyprus, will perform ALD coatings of particles, powders, and small 3D objects with and without plasma. Its rotary reactor architecture optimizes conformal coating without the complexity of traditional fluidized approaches.

"The Cyprus Particle Coating system expands the ability to deposit thin films on powders by utilizing thermal and plasma ALD in a single platform. This in turn and can allow users to take advantage of the full spectrum of additional benefits such as improved nucleation rates, decreased processing temperature, and improved film quality offered by plasma-assisted ALD processes," explains Ganesh Sundaram, VP of technology at Cambridge NanoTech.

Ghent University has been developing its particle and powder coating technologies focusing on surface functionalization uses. "There have been an increasing number of possible applications for nanocoatings on particles and powders emerging over the past decade that require atomic level control of layer thickness and uniformity," said Christophe Detavernier, Professor at Ghent University. "ALD has proven to be a very reliable method for depositing ultrathin, conformal coatings on powders."

Located in Flanders, Belgium, Ghent University is an active partner in national and international educational, scientific and industrial cooperation. Ghent University hosts 32,000 students and 7,100 staff members.

Cambridge NanoTech delivers Atomic Layer Deposition (ALD) systems capable of depositing ultra-thin films that are used in a wide variety of research and industrial applications. To learn more about Cambridge NanoTech, please visit www.cambridgenanotech.com.

June 28, 2012 — SEMICON West 2012 will take place July 10-12 at the Moscone Center in San Francisco, CA. Following is a preview of the light-emitting diode (LED) and organic LED (OLED) events taking place during SEMICON West.

Wednesday, July 11

10:30am-3:30pm

Enabling the Next Generation of HB LEDs

We’ve invited industry experts from across the globe to talk about practical solutions for enabling the economics for the solid state lighting market to take off, focusing particularly on significant new developments in manufacturing technology. The morning addresses some big-picture topics, with Cree’s Mike Watson discussing business model issues, and Canaccord Genuity’s Jed Dorscheimer examining the impact of improving yields on his projections for wide market adoption. Everlight Electronics’ Ilkan Cokgor focuses on potential solutions for reducing the high cost of packaging. Lunera’s Steve Paolini looks at options beyond blue LED emitters. LayTec’s Kolja Haberland discusses the potential impact of in-situ metrology on yield, while EVG’s Thomas Uhrmann talks about better light extraction with efficient alternatives for nano-patterning sapphire.

The afternoon program looks at the status of some potentially disruptive technologies.

Soraa’s Mike Krames updates on GaN-on-GaN technology, while Lattice Power’s Hanmin Zhao presents results of their GaN-on-Si production, and Yole Développement’s Eric Virey gives an overview the state of GaN-on-Si technology across the industry. Seoul Semiconductor’s Brian Wilcox looks at the potential for AC and UV technologies. James Zahler of GT Advanced Technologies shares results of research on which substrate defects turn out to really matter most. And Dan Morrow of Op-Test shows data on using radiometric color measurements to predict final device performance. http://www.semiconwest.org/node/8501 

Location: Extreme Electronics TechXPOT

Back right-hand corner of Moscone South Hall

 

10:00am-6:00pm

Metal Oxide TFT Devices and Technology Workshop

FlexTech Alliance presents a workshop on the state of low temperature, low cost metal oxide TFTs for OLED and LCDs, with speakers from Sharp, CBRITE, PARC, BizWitz, Cambridge NanoTech, Oregon State, Penn State, Eastman Kodak, and Arizona State. Separate registration required. http://www.semiconwest.org/node/9156

Location: San Francisco Marriott Marquis Hotel, 55 Fourth Street (Fourth & Mission), near Moscone Center

3:30-5:00pm

SEMICON West Happy Hour

Location: South and North Halls

 

Thursday, July 12

10:30-11:45

Plastic/Flexible Electronics program looks at the state of OLED lighting technology

The program on printed/flexible electronics also covers OLED technology this year.

Panasonic’s Takuya Komoda will report on the lower- cost production technology enabling the company’s joint venture commercial OLED lighting products. Display Search’s Jennifer Colegrove gives an update on the state of the OLED market and technology for lighting and displays. IMEC’s Serge Biesemans discusses that research institute’s OLED flexible electronics work. http://www.semiconwest.org/node/8536

Location: Extreme Electronics TechXPOT

3:00 PM to 5:00 PM

 

HB-LED Standards Committee Meeting

The HB-LED Standards Committee will review progress towards 150mm sapphire wafer specifications, automation specifications, and evaluation of wafer defects. The wafer task force will report on progress on its sapphire wafer specifications, and on the available results from its cooperative research effort on the survivability of various wafer marks. The automation task force will update on its progress on specifications for open cassettes, load ports, and software communications interfaces. The new task force on wafer impurities and defects will discuss results from its survey on which sapphire defects matter most and how best to inspect for them. See Standards SEMICON West 2012  for more information and to register.

Location: San Francisco Marriott Marquis Hotel, 55 Fourth Street (Fourth & Mission), near Moscone Center

For more information on SEMICON West 2012, please visit www.semiconwest.org. Register now.

June 27, 2012 — Canon Inc. launched the FPA-3030i5+ i-line stepper for manufacturing micro electro mechanical systems (MEMS) and energy-efficient “green” devices such as power semiconductors in solar and wind applications and light-emitting diodes (LEDs).

Several upgrades were incorporated to the FPA-3000 series to meet the “unique process requirements” in these markets. The FPA-30303i5+ provides imaging resolution below 350nm while maintaining overlay accuracy of <40nm and throughput in excess of 104 wafers per hour (WPH).

The FPA-3030i5+ features an updated software structure and electrical control system that allow the application of advanced hardware and software options to support next-generation semiconductor manufacturing.

The FPA-3030 platform allows processing of silicon (Si), sapphire (Al2O3), silicon carbide (SiC) and a wide variety of wafer materials used in “green” device manufacturing. FPA-3030i5+ options include warped-wafer handling systems to allow processing of distorted substrates. The FPA-3030i5+ stepper can also be configured to process multiple wafer sizes, and hosts various options to improve productivity and efficiency.

Canon Inc. (NYSE:CAJ) provides digital imaging solutions. Internet: http://www.canon.com/.

Visit the MEMS Channel of Solid State Technology, and subscribe to our MEMS Direct e-newsletter!

June 26, 2012 — Vacuum product and abatement system maker Edwards (NASDAQ:EVAC) introduced the iXH645H dry pump, optimized for metal-organic chemical vapor deposition, a key step in light-emitting diode (LED) and compound semiconductor (III-V materials) manufacturing.

The iXH645H delivers very high gas flow capability and can operate continuously at the high loads required for the latest-generation LED manufacturing tools. LED and compound semiconductor manufacturing processes typically use high flows of light hydrogen and highly corrosive ammonia gasses. The iXH645H reportedly offers superior hydrogen pumping performance and a corrosion-resistant design, including a patented nitrogen purge barrier to protect the pump seals. Its high-temperature capabilities help prevent condensation of any phosphorous compounds present.

Maintenance requirements are minimized to increase uptime. Advanced oil lubrication and seal technology eliminate periodic maintenance requirements, while its thermal and motor design prevent overheating, motor overloads or zones of limited operation. The pump’s optimized temperature control system ensures the pump is ready for process within approximately 30 minutes of start-up.

Also read: Growing market for LEDs fuels need for advanced abatement systems

Visit Edwards at North Hall, Booth 5351 during InterSolar and SEMICON West, taking place July 10-12 at the Moscone Center in San Francisco. More SEMICON West products here.

Edwards is a leading manufacturer of sophisticated vacuum products and abatement systems and a leading provider of related value-added services for the manufacture of semiconductors, flat panel displays, LEDs and solar cells, as well as other industries. Edwards’ American Depositary Shares trade on The NASDAQ Global Select Market under the symbol EVAC. Further information about Edwards can be found at www.edwardsvacuum.com.

Visit the LED Manufacturing Channel on Solid State Technology and subscribe to the LED Manufacturing News monthly e-newsletter!

June 26, 2012 — JP Sercel Associates Inc. released the IX-6168-PS picosecond-laser-based micromachining platform, using lasers with 5-500 picosecond pulse lengths.

The lasers machine glass, ceramics, metals and alloys, and other hard-to-process materials. With ultrafast laser processing, the pulse duration is shorter than the thermal diffusion timescale of the material, resulting in a direct solid to vapor transition that greatly reduces debris formation, and minimizes thermal impact on the surrounding area.

The JPSA picosecond laser platform is designed to accept multiple types of ultrafast lasers. Laser choices include infrared (IR), green or UV wavelengths, and a range of power and pulse rate options. The laser is accommodated in a slide-out service trolley within the workstation, and is fully integrated with the system control software. 

JPSA provides a dual-beam delivery configuration; a fixed-beam configuration can be used to produce a finely focused beam, with a precision air-bearing stage for precise feature positioning; for high-speed processing of complex shapes, a high-accuracy galvanometer configuration incorporates a step-and-scan function. The IX-6168-PS is delivered with both fixed beam and galvanometer scanning capability, and can be easily reconfigured on-site to suit individual needs.

The IX-6168-PS can be supplied as a manual-load system, or combined with JPSA’s Integrated Automation Platform for fully automated operation in semiconductor wafer applications. Configuration options include laser wavelength, power and repetition rate, and a choice of galvanometer scanner and lens systems to optimize large deflection field applications.

JPSA products and services include UV excimer, DPSS and ultra-fast laser micromachining systems, UV and VUV laser beam delivery systems, laser materials processing development, optical damage testing, and excimer laser refurbishment services. JPSA operates a high-performance laser job shop as well as a systems engineering and manufacturing business. For more information, visit http://www.jpsalaser.com.